WO2003001253A2 - Optoelektronisches bauelement und verfahren zu seiner herstellung - Google Patents
Optoelektronisches bauelement und verfahren zu seiner herstellung Download PDFInfo
- Publication number
- WO2003001253A2 WO2003001253A2 PCT/DE2002/002232 DE0202232W WO03001253A2 WO 2003001253 A2 WO2003001253 A2 WO 2003001253A2 DE 0202232 W DE0202232 W DE 0202232W WO 03001253 A2 WO03001253 A2 WO 03001253A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stamp
- receiver
- transmitter
- transparent
- filling material
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000945 filler Substances 0.000 claims description 24
- 239000012780 transparent material Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000181 anti-adherent effect Effects 0.000 claims description 2
- 238000004049 embossing Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 description 11
- 230000009969 flowable effect Effects 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/08—Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Definitions
- the present invention relates to an optoelectronic component with a carrier body, an optoelectronic transmitter or receiver arranged in a recess in the carrier body and a filling made of a transparent material and embedding the optoelectronic transmitter or receiver in the recess of the carrier body, and a method for producing such a device optoelectronic component.
- FIG. 3 An example of such an optoelectronic component is shown in FIG. 3.
- the design shown in FIG. 3 is described and illustrated, for example, in the article “SIEMENS SMT-TOPLED for surface mounting” by F. Möllmer and G. Waitl in the magazine Siemens Components 29 (1991), No. 4, pages 147-149 an optoelectronic component manufactured with surface mounting technology (SMT).
- SMT surface mounting technology
- An optoelectronic transmitter such as an LED 2 is mounted with one of its electrical contact surfaces on a conductor strip 5a, which is connected to one pole of a voltage source, while an opposite conductor strip 5b, connected to the other pole of the voltage source, is connected to the conductor by a bonding wire 6 other electrical contact surface of the LED 2 is connected.
- a carrier body 1 is injection-molded from a high-temperature-resistant thermoplastic around the conductor strips 5a, 5b, a recess 1A being formed in the carrier body 1, into which the LED 2 arranged on the conductor strip 5a projects.
- the recess 1A of the carrier body 2 is filled with a transparent filling material 3 in order to protectly embed the LED 2 therein. As shown in FIG.
- an optical element such as a lens 4 is arranged on the surface 3B of the filler material 3 that ends with the surface 1B of the carrier body 1 in order to change the emission characteristic of the LED 2.
- Various methods for applying the lens 4 to the optoelectronic component are already known from the prior art.
- the optical element is also applied when the LED is cast with the transparent filler material by means of a corresponding casting mold.
- An optoelectronic component produced by this method is described, for example, in US Pat. No. 4,843,280, even if the shaping of the filler material with different lens shapes is not dealt with in detail there.
- Another manufacturing method of optoelectronic components described at the outset is to first cast the recess of the carrier body with the transparent filler material and then to apply the optical element separately to the surface of the filler material. Examples of such processes are described, for example, in DE 197 55 734 AI and DE 199 18 370 AI.
- the disadvantage of this method is that an additional process step of applying the lens is required and that the method is sensitive to high tolerances in the planar encapsulation of the filler material or in the placement of the lenses and to the adhesion of the lenses to the transparent filler material.
- the object of the present invention is therefore to provide an optoelectronic component and a method for its production, in which the application of an optical element can be carried out in a simple manner at low cost and with a precise fit.
- the invention proposes to design the surface of the filling facing away from the transmitter or receiver itself with a lens profile. This is done according to the invention by pouring a defined amount of the transparent filler material into the recess for embedding the transmitter or receiver and then stamping a lens profile onto the surface of the transparent filler material facing away from the transmitter or receiver before the transparent filler material is cured with the lens profile thus embossed.
- the lens profile is preferably stamped onto the surface of the transparent filler material facing away from the transmitter or receiver by means of a stamp which has a stamp surface corresponding to the lens profile.
- the stamp surface of the stamp can have a coating made of a material which has non-adhesive properties with respect to the filling material.
- the stamp consists of a transparent material and the filling material consists of a UV-initiated or light-initiated cationically curing, transparent material.
- the above process step of curing the filler material with a lens profile can be carried out by applying UV or light radiation through the stamp to the filler material, as a result of which, in particular, epoxy resins with this hardening mechanism change into a gel phase, which already allows pre-fixing.
- the hardening can take place within a few seconds. It is even possible to stimulate the hardening only with the help of a short light or UV flash. After this brief hardening phase, the stamp can be lifted off and the lens profile can then be finally fixed at elevated temperatures by post-hardening.
- FIG. 1 shows a schematic sectional illustration of an optoelectronic component in accordance with the present invention
- FIG. 2 shows a schematic illustration to explain a method for producing the optoelectronic component from FIG. 1 according to the present invention
- Fig. 3 is a schematic sectional view of a conventional optoelectronic component.
- the base body for the component is formed by extrusion-coating a conductor strip 5 with a high-temperature-resistant thermoplastic to form a carrier body 1.
- the carrier body 1 has a central recess 1A, in which an optoelectronic transmitter or receiver, such as an LED 2, is arranged and electrically connected to the conductor strip 5.
- the inner surfaces of the recess 1A of the carrier body 1 are preferably formed obliquely, as shown in FIG. 1.
- these inclined inner surfaces serve as reflectors in order to increase the radiation power or the reception sensitivity of the optoelectronic component.
- the optoelectronic transmitter or receiver 2 is embedded in a transparent filler 3.
- the surface 3B of the filler material 3 facing away from the transmitter or receiver 2 is essentially flush with the surface 1B of the carrier body 1B.
- other filling heights of the filling material 3 in the recess 1A of the carrier body 1 can of course also be selected as required.
- the surface 3B of the filling material 3 facing away from the transmitter or receiver 2 is provided with a lens profile 7.
- hen, which is introduced directly into the filling material 3. 1 shows a Fresnel lens as an example of a lens profile 7 in a greatly simplified form.
- the invention is not limited to the lens shape 7 illustrated in FIG. 1; in principle, the surface 3B of the filling material 3 can be formed with any lens shape.
- a transparent material is used as the material for the filling material 3, which preferably has UV-initiated or light-initiated cationic curing properties.
- a particularly preferred filling material 3 contains a UV-initiated or light-initiated cationically curing epoxy resin. Such filler material 3 can be cured or pre-fixed within a few seconds by exposure to light or UV radiation and can be fully cured thermally at a later point in time.
- the filling material 3 contains, in addition to its main constituent of the epoxy resin specified above, further proportions, such as the bond strength with the carrier body material, the hardening and curing time, the light transmittance Adjust the refractive index, temperature resistance, mechanical hardness, etc. as required.
- the conductor strip 5 is extrusion-coated with the high-temperature-resistant thermoplastic in order to form the carrier body 1.
- a central recess 1A is formed in the carrier body 1, on the bottom surface of which the conductor band 5 is exposed for contacting.
- the transmitter or receiver, such as an LED 2 is arranged in this recess 1A and is electrically connected to the conductor strips 5 in the usual manner.
- a defined amount of the transparent and flowable filling material 3 described above is then filled into the recess 1A in order to embed the transmitter or receiver 2 therein.
- the amount of the filling material 3 to be filled is dimensioned such that the surface 3B facing away from the embedded transmitter or receiver 2 is flush with the surface 1B of the carrier body 1B, i.e. in other words, the recess 1A is completely filled with the flowable filling material 3.
- a stamp 8 is pressed onto the surface 3B of the still flowable filling material 3, as indicated by the arrow in FIG. 2.
- the stamp 8 has a stamp surface 8A which corresponds to a desired lens shape 7 which is to be embossed on the surface 3B of the filling material 3.
- the lens shape 7 is shown schematically as a Fresnel lens; however, the invention is not restricted to this special lens shape.
- the stamp 8 with the stamp surface 8A is preferably made of a transparent material, such as glass or plastic.
- a transparent material such as glass or plastic.
- UV or light radiation to the surface 3B of the filling material 3 from the UV-initiated or light-initiated cationically curing material by means of a suitable radiation source 9, while the stamp 8 is closed
- Forming the lens profile 7 is pressed onto the surface 3B of the filler 3 to harden the surface 3B with the molded lens profile 7 in this state or prefix. After a period of about 0.1 to 5 seconds, the lens profile 7 has already been sufficiently fixed.
- the stamp 8 is then lifted off the hardened surface 3B of the filling material 3.
- at least the stamp surface 8A of the stamp 8 advantageously has a coating made of a transparent material with properties which are anti-adhesive with respect to the filling material 3.
- the hardened filling material 3 with the pre-fixed lens profile is completely hardened, for example at a temperature of over 100 ° C.
- the direct stamping of a lens profile onto the surface of the filling material makes a separate method step for applying a lens superfluous.
- the stamping process is relatively simple and unproblematic while at the same time ensuring a sufficiently high accuracy of fit of the lens profile.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/481,528 US7256428B2 (en) | 2001-06-20 | 2002-06-19 | Optoelectronic component and method for the production thereof |
JP2003507594A JP2004532533A (ja) | 2001-06-20 | 2002-06-19 | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10129785A DE10129785B4 (de) | 2001-06-20 | 2001-06-20 | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE10129785.8 | 2001-06-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003001253A2 true WO2003001253A2 (de) | 2003-01-03 |
WO2003001253A3 WO2003001253A3 (de) | 2003-03-13 |
Family
ID=7688865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/002232 WO2003001253A2 (de) | 2001-06-20 | 2002-06-19 | Optoelektronisches bauelement und verfahren zu seiner herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US7256428B2 (de) |
JP (1) | JP2004532533A (de) |
DE (1) | DE10129785B4 (de) |
WO (1) | WO2003001253A2 (de) |
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WO2011160968A1 (de) * | 2010-06-24 | 2011-12-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil |
EP3057140A1 (de) * | 2015-02-13 | 2016-08-17 | Taiwan Biophotonic Corporation | Reflektives optisches sensor-modul |
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DE102004001312B4 (de) * | 2003-07-25 | 2010-09-30 | Seoul Semiconductor Co., Ltd. | Chip-Leuchtdiode und Verfahren zu ihrer Herstellung |
DE10353604B4 (de) * | 2003-08-27 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
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US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
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US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
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JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
JP2010050294A (ja) * | 2008-08-22 | 2010-03-04 | Glory Science Co Ltd | レンズを有する発光ユニットの製造方法 |
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TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
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- 2001-06-20 DE DE10129785A patent/DE10129785B4/de not_active Expired - Fee Related
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2002
- 2002-06-19 US US10/481,528 patent/US7256428B2/en not_active Expired - Lifetime
- 2002-06-19 JP JP2003507594A patent/JP2004532533A/ja active Pending
- 2002-06-19 WO PCT/DE2002/002232 patent/WO2003001253A2/de active Application Filing
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011160968A1 (de) * | 2010-06-24 | 2011-12-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil |
CN102959746A (zh) * | 2010-06-24 | 2013-03-06 | 欧司朗光电半导体有限公司 | 光电子半导体构件 |
US9818921B2 (en) | 2010-06-24 | 2017-11-14 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US10217915B2 (en) | 2010-06-24 | 2019-02-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
EP3057140A1 (de) * | 2015-02-13 | 2016-08-17 | Taiwan Biophotonic Corporation | Reflektives optisches sensor-modul |
EP3059765A1 (de) * | 2015-02-13 | 2016-08-24 | Taiwan Biophotonic Corporation | Reflektives optisches sensor-modul |
US9506802B2 (en) | 2015-02-13 | 2016-11-29 | Taiwan Biophotonic Corporation | Optical sensor |
US9664556B2 (en) | 2015-02-13 | 2017-05-30 | Taiwan Biophotonic Corporation | Optical sensor |
US9696199B2 (en) | 2015-02-13 | 2017-07-04 | Taiwan Biophotonic Corporation | Optical sensor |
CN105895594B (zh) * | 2015-02-13 | 2019-01-04 | 台医光电科技股份有限公司 | 光学传感模组、光学传感配件与光学传感装置 |
Also Published As
Publication number | Publication date |
---|---|
DE10129785A1 (de) | 2003-01-09 |
US20050001228A1 (en) | 2005-01-06 |
US7256428B2 (en) | 2007-08-14 |
JP2004532533A (ja) | 2004-10-21 |
WO2003001253A3 (de) | 2003-03-13 |
DE10129785B4 (de) | 2010-03-18 |
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