WO2003019351A3 - Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability - Google Patents

Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability Download PDF

Info

Publication number
WO2003019351A3
WO2003019351A3 PCT/US2002/026516 US0226516W WO03019351A3 WO 2003019351 A3 WO2003019351 A3 WO 2003019351A3 US 0226516 W US0226516 W US 0226516W WO 03019351 A3 WO03019351 A3 WO 03019351A3
Authority
WO
WIPO (PCT)
Prior art keywords
data rate
sdr
ddr
read
write
Prior art date
Application number
PCT/US2002/026516
Other languages
French (fr)
Other versions
WO2003019351A2 (en
Inventor
Jiann-Jeng Duh
Mario Fulam Au
Original Assignee
Integrated Device Tech
Jiann-Jeng Duh
Mario Fulam Au
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Device Tech, Jiann-Jeng Duh, Mario Fulam Au filed Critical Integrated Device Tech
Priority to EP02753502A priority Critical patent/EP1419433A2/en
Publication of WO2003019351A2 publication Critical patent/WO2003019351A2/en
Publication of WO2003019351A3 publication Critical patent/WO2003019351A3/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F5/00Methods or arrangements for data conversion without changing the order or content of the data handled
    • G06F5/06Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2205/00Indexing scheme relating to group G06F5/00; Methods or arrangements for data conversion without changing the order or content of the data handled
    • G06F2205/06Indexing scheme relating to groups G06F5/06 - G06F5/16
    • G06F2205/062Allowing rewriting or rereading data to or from the buffer

Abstract

First-in first-out (FIFO) memory devices include a plurality of memory devices that are configured to support any combination of dual data rate (DDR) or single data rate (SDR) write modes that operate in-sync with a write clock signal (WCLK) and DDR or SDR read modes that operate in-sync with a read clock signal (RCLK). These FIFO memory devices provide flexible x4N, x2N and xN bus matching on both read and write ports and enable data to be written and read on both rising and falling edges of the write and read clock signals. Custom flag generation circuitry and retransmit circuitry are also provided that can efficiently handle any width DDR write mode with any width SDR read mode or any width SDR write mode with any width DDR read mode.
PCT/US2002/026516 2001-08-23 2002-08-20 Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability WO2003019351A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP02753502A EP1419433A2 (en) 2001-08-23 2002-08-20 Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US31439301P 2001-08-23 2001-08-23
US60/314,393 2001-08-23
US09/972,265 2001-10-05
US09/972,265 US6795360B2 (en) 2001-08-23 2001-10-05 Fifo memory devices that support all four combinations of DDR or SDR write modes with DDR or SDR read modes

Publications (2)

Publication Number Publication Date
WO2003019351A2 WO2003019351A2 (en) 2003-03-06
WO2003019351A3 true WO2003019351A3 (en) 2004-02-19

Family

ID=26979339

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/026516 WO2003019351A2 (en) 2001-08-23 2002-08-20 Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability

Country Status (4)

Country Link
US (3) US6795360B2 (en)
EP (1) EP1419433A2 (en)
CN (1) CN100419667C (en)
WO (1) WO2003019351A2 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7076610B2 (en) * 2000-11-22 2006-07-11 Integrated Device Technology, Inc. FIFO memory devices having multi-port cache memory arrays therein that support hidden EDC latency and bus matching and methods of operating same
US7082071B2 (en) * 2001-08-23 2006-07-25 Integrated Device Technology, Inc. Integrated DDR/SDR flow control managers that support multiple queues and MUX, DEMUX and broadcast operating modes
JP2004062630A (en) * 2002-07-30 2004-02-26 Fujitsu Ltd Fifo memory and semiconductor device
KR100498448B1 (en) * 2002-09-30 2005-07-01 삼성전자주식회사 Synchronous semiconductor device and Method for minimizing coupling between data bus
US7051229B2 (en) * 2002-12-03 2006-05-23 Alcatel Canada Inc. Logical bus overlay for increasing the existing system bus data rate
US7209983B2 (en) * 2003-07-03 2007-04-24 Integrated Device Technology, Inc. Sequential flow-control and FIFO memory devices that are depth expandable in standard mode operation
US7088627B1 (en) * 2003-07-29 2006-08-08 Xilinx, Inc. Column redundancy scheme for non-volatile flash memory using JTAG input protocol
US7120075B1 (en) * 2003-08-18 2006-10-10 Integrated Device Technology, Inc. Multi-FIFO integrated circuit devices that support multi-queue operating modes with enhanced write path and read path queue switching
US20050050375A1 (en) * 2003-08-29 2005-03-03 Mark Novak Memory interface system and method
KR100556907B1 (en) * 2003-10-20 2006-03-03 엘지전자 주식회사 Nand-type flash memory
US7133324B2 (en) * 2003-12-24 2006-11-07 Samsung Electronics Co., Ltd. Synchronous dynamic random access memory devices having dual data rate 1 (DDR1) and DDR2 modes of operation and methods of operating same
US7447812B1 (en) 2004-03-23 2008-11-04 Integrated Device Technology, Inc. Multi-queue FIFO memory devices that support flow-through of write and read counter updates using multi-port flag counter register files
US7071748B2 (en) * 2004-04-26 2006-07-04 Atmel Corporation Charge pump clock for non-volatile memories
CN100437512C (en) * 2004-06-14 2008-11-26 皇家飞利浦电子股份有限公司 Interface device for debugging and/or tracing a computer system comprising one or multiple masters and one or multiple slaves working together
US7523232B2 (en) * 2004-07-26 2009-04-21 Integrated Device Technology, Inc. Mark/re-read and mark/re-write operations in a multi-queue first-in first-out memory system
US8230174B2 (en) * 2004-07-26 2012-07-24 Integrated Device Technology, Inc. Multi-queue address generator for start and end addresses in a multi-queue first-in first-out memory system
US7805552B2 (en) 2004-07-26 2010-09-28 Integrated Device Technology, Inc. Partial packet write and write data filtering in a multi-queue first-in first-out memory system
US7870310B2 (en) * 2004-07-26 2011-01-11 Integrated Device Technology, Inc. Multiple counters to relieve flag restriction in a multi-queue first-in first-out memory system
US7180821B2 (en) * 2004-09-30 2007-02-20 Infineon Technologies Ag Memory device, memory controller and memory system having bidirectional clock lines
US7502377B2 (en) * 2004-10-29 2009-03-10 Intel Corporation PCI to PCI express protocol conversion
US20060155940A1 (en) 2005-01-10 2006-07-13 Mario Au Multi-queue FIFO memory systems that utilize read chip select and device identification codes to control one-at-a-time bus access between selected FIFO memory chips
JP4606216B2 (en) * 2005-03-24 2011-01-05 富士通セミコンダクター株式会社 Communication data control device
US7366823B2 (en) * 2005-05-11 2008-04-29 Broadcom Corporation Method and system for memory access
US7831882B2 (en) * 2005-06-03 2010-11-09 Rambus Inc. Memory system with error detection and retry modes of operation
US9459960B2 (en) * 2005-06-03 2016-10-04 Rambus Inc. Controller device for use with electrically erasable programmable memory chip with error detection and retry modes of operation
US7349289B2 (en) * 2005-07-08 2008-03-25 Promos Technologies Inc. Two-bit per I/O line write data bus for DDR1 and DDR2 operating modes in a DRAM
US7660183B2 (en) 2005-08-01 2010-02-09 Rambus Inc. Low power memory device
US20070073932A1 (en) * 2005-09-13 2007-03-29 Alcatel Method and apparatus for a configurable data path interface
US7460431B1 (en) * 2005-10-03 2008-12-02 Altera Corporation Implementation of double data rate embedded memory in programmable devices
US7414916B1 (en) * 2005-12-16 2008-08-19 Altera Corporation Using dedicated read output path to reduce unregistered read access time for FPGA embedded memory
US7603496B2 (en) * 2006-01-23 2009-10-13 Arm Limited Buffering data during data transfer through a plurality of channels
US8588354B2 (en) * 2006-02-09 2013-11-19 Flextronics Ap, Llc Egress pointer smoother
FR2898455A1 (en) * 2006-03-13 2007-09-14 Thomson Licensing Sas METHOD AND DEVICE FOR TRANSMITTING DATA PACKETS
US7565466B2 (en) * 2006-03-22 2009-07-21 Infineon Technologies Ag Memory including an output pointer circuit
US7831778B2 (en) * 2006-03-30 2010-11-09 Silicon Image, Inc. Shared nonvolatile memory architecture
US7949863B2 (en) * 2006-03-30 2011-05-24 Silicon Image, Inc. Inter-port communication in a multi-port memory device
KR100736675B1 (en) * 2006-08-01 2007-07-06 주식회사 유니테스트 Tester for testing semiconductor device
KR100845525B1 (en) * 2006-08-07 2008-07-10 삼성전자주식회사 Memory card system, method transferring data thereof, and semiconductor memory device
US7394710B1 (en) * 2006-10-05 2008-07-01 Lockheed Martin Corporation Auto-recovery fault tolerant memory synchronization
KR100784865B1 (en) 2006-12-12 2007-12-14 삼성전자주식회사 Nand flash memory device and memory system including the same
US8984249B2 (en) * 2006-12-20 2015-03-17 Novachips Canada Inc. ID generation apparatus and method for serially interconnected devices
US8032725B1 (en) * 2007-01-30 2011-10-04 Netapp, Inc. Backup data management on a fractionally reserved storage system
US7865805B1 (en) 2007-02-26 2011-01-04 Lockheed Martin Corporation Multiple bit upset insensitive error detection and correction circuit for field programmable gate array based on static random access memory blocks
US8775701B1 (en) * 2007-02-28 2014-07-08 Altera Corporation Method and apparatus for source-synchronous capture using a first-in-first-out unit
US8190834B2 (en) * 2007-06-15 2012-05-29 Emc Corporation Process for contiguously streaming data from a content addressed storage system
US7542365B2 (en) * 2007-09-27 2009-06-02 Freescale Semiconductor, Inc. Apparatus and method for accessing a synchronous serial memory having unknown address bit field size
TWI384364B (en) * 2007-11-16 2013-02-01 Mstar Semiconductor Inc Data accessing apparatus and method
KR101529291B1 (en) 2008-02-27 2015-06-17 삼성전자주식회사 Flash memory device and flash memory system including the same
US8681526B2 (en) * 2008-07-02 2014-03-25 Cradle Ip, Llc Size and retry programmable multi-synchronous FIFO
CN101677019B (en) * 2008-09-18 2014-07-16 深圳市朗科科技股份有限公司 Production line reading method and system of flash memory
US20100268897A1 (en) * 2009-04-16 2010-10-21 Keishi Okamoto Memory device and memory device controller
CN101552041A (en) * 2009-05-12 2009-10-07 北京中星微电子有限公司 An FIFO memory cell and implementation method thereof
US8407528B2 (en) * 2009-06-30 2013-03-26 Texas Instruments Incorporated Circuits, systems, apparatus and processes for monitoring activity in multi-processing systems
US8711639B2 (en) 2010-11-02 2014-04-29 Micron Technology, Inc. Data paths using a first signal to capture data and a second signal to output data and methods for providing data
US8570790B2 (en) * 2011-01-13 2013-10-29 Cypress Semiconductor Corporation Memory devices and methods for high random transaction rate
US8522089B2 (en) * 2011-01-21 2013-08-27 Freescale Semiconductor, Inc. Method of testing asynchronous modules in semiconductor device
US8649210B2 (en) * 2011-09-06 2014-02-11 Mediatek Inc. DDR PSRAM and data writing and reading methods thereof
TWI489485B (en) * 2011-09-13 2015-06-21 Etron Technology Inc Memory access circuit applied for double data/single data rate
CN102610269B (en) * 2012-01-17 2014-04-09 中国科学院半导体研究所 Write-once read-many disc internal memory
WO2014023316A1 (en) * 2012-08-06 2014-02-13 Telefonaktiebolaget L M Ericsson (Publ) Technique for controlling memory accesses
JP2015001986A (en) * 2013-06-13 2015-01-05 富士通株式会社 Data transfer device, buffering circuit, and buffering method
US9818462B1 (en) * 2017-01-19 2017-11-14 Micron Technology, Inc. Apparatuses and methods for providing internal clock signals of different clock frequencies in a memory device
US10884639B2 (en) * 2017-02-27 2021-01-05 Qualcomm Incorporated Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM)
US10754812B2 (en) * 2017-03-20 2020-08-25 Intel IP Corporation N-depth asynchronous FIFO including a collection of 1-depth FIFO cells
US10572440B2 (en) * 2017-12-21 2020-02-25 Stmicroelectronics International N.V. High operation frequency, area efficient and cost effective content addressable memory architecture
US10580476B2 (en) 2018-01-11 2020-03-03 International Business Machines Corporation Simulating a single data rate (SDR) mode on a dual data rate (DDR) memory controller for calibrating DDR memory coarse alignment
CN109358835B (en) * 2018-10-25 2021-01-15 天津市滨海新区信息技术创新中心 FIFO memory and data transmission method thereof
TWI714930B (en) * 2018-12-21 2021-01-01 瑞昱半導體股份有限公司 Control system, control method and nonvolatile computer readable medium for operating the same
US11544065B2 (en) * 2019-09-27 2023-01-03 Advanced Micro Devices, Inc. Bit width reconfiguration using a shadow-latch configured register file
CN111341376B (en) * 2020-03-11 2022-06-24 展讯通信(上海)有限公司 SRAM (static random Access memory) timing sequence test circuit and test method
CN111399802B (en) * 2020-03-24 2022-08-19 飞腾信息技术有限公司 Multi-power-domain multi-clock-domain first-in first-out queue, integrated circuit chip and computer equipment
US11599359B2 (en) 2020-05-18 2023-03-07 Advanced Micro Devices, Inc. Methods and systems for utilizing a master-shadow physical register file based on verified activation
US11626149B2 (en) * 2020-09-15 2023-04-11 Integrated Silicon Solution, (Cayman) Inc. SPI NOR memory with optimized read and program operation
CN112181703B (en) * 2020-09-28 2022-10-28 中国人民解放军国防科技大学 CAM supporting soft error retransmission mechanism between capacity processor and memory board and application method
CN113867681B (en) * 2021-09-30 2024-03-08 海光信息技术股份有限公司 Data processing method and device, data processing equipment and storage medium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421627A2 (en) * 1989-10-03 1991-04-10 Advanced Micro Devices, Inc. Memory device
JPH08202618A (en) * 1995-01-27 1996-08-09 Sony Corp Memory control circuit
EP0978842A1 (en) * 1998-08-04 2000-02-09 Samsung Electronics Co., Ltd. Synchronous burst semiconductor memory device

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US54121A (en) * 1866-04-24 Improved machine for the manufacture of rod-solder
US48201A (en) * 1865-06-13 Improvement in magazine fire-arms
US89927A (en) * 1869-05-11 g a r n e r
US71332A (en) * 1867-11-26 Improvement in lubricators for journals
US599947A (en) * 1898-03-01 Sylvania
US29558A (en) * 1860-08-14 Bread-slicer
US14053A (en) * 1856-01-08 Improvement in disinfecting fecal matter
US4335A (en) * 1845-12-26 Mill fob
US5261064A (en) 1989-10-03 1993-11-09 Advanced Micro Devices, Inc. Burst access memory
JPH05274860A (en) 1992-03-26 1993-10-22 Nec Corp Semiconductor memory
US5365485A (en) * 1993-11-22 1994-11-15 Texas Instruments Incorporated Fifo with fast retransmit mode
JPH0820618A (en) 1994-07-07 1996-01-23 Mitsubishi Rayon Co Ltd Curable resin composition
US5546347A (en) * 1994-07-22 1996-08-13 Integrated Device Technology, Inc. Interleaving architecture and method for a high density FIFO
US5860160A (en) * 1996-12-18 1999-01-12 Cypress Semiconductor Corp. High speed FIFO mark and retransmit scheme using latches and precharge
US6072741A (en) * 1997-04-01 2000-06-06 Ramtron International Corporation First-in, first-out integrated circuit memory device incorporating a retransmit function
US6118835A (en) 1997-09-05 2000-09-12 Lucent Technologies, Inc. Apparatus and method of synchronizing two logic blocks operating at different rates
KR100252057B1 (en) 1997-12-30 2000-05-01 윤종용 Semiconductor memory device usable in SDR and DDR
US5982700A (en) 1998-05-21 1999-11-09 Integrated Device Technology, Inc. Buffer memory arrays having nonlinear columns for providing parallel data access capability and methods of operating same
US5978307A (en) 1998-05-21 1999-11-02 Integrated Device Technology, Inc. Integrated circuit memory devices having partitioned multi-port memory arrays therein for increasing data bandwidth and methods of operating same
US5999478A (en) 1998-05-21 1999-12-07 Integrated Device Technology, Inc. Highly integrated tri-port memory buffers having fast fall-through capability and methods of operating same
JP2000067577A (en) * 1998-06-10 2000-03-03 Mitsubishi Electric Corp Synchronous semiconductor memory
JP2000054893A (en) 1998-08-04 2000-02-22 Toyota Motor Corp Intake throttle valve control device for internal combustion engine
KR100282125B1 (en) 1998-08-04 2001-02-15 윤종용 Address generation circuit of a burst-type random access memory device
US6115760A (en) 1998-08-24 2000-09-05 3Com Corporation Intelligent scaleable FIFO buffer circuit for interfacing between digital domains
US6263410B1 (en) 1998-09-15 2001-07-17 Industrial Technology Research Institute Apparatus and method for asynchronous dual port FIFO
JP3948141B2 (en) * 1998-09-24 2007-07-25 富士通株式会社 Semiconductor memory device and control method thereof
US6269413B1 (en) 1998-10-30 2001-07-31 Hewlett Packard Company System with multiple dynamically-sized logical FIFOs sharing single memory and with read/write pointers independently selectable and simultaneously responsive to respective read/write FIFO selections
JP2000163965A (en) 1998-11-27 2000-06-16 Mitsubishi Electric Corp Synchronous semiconductor storage
US6081477A (en) 1998-12-03 2000-06-27 Micron Technology, Inc. Write scheme for a double data rate SDRAM
KR100304963B1 (en) 1998-12-29 2001-09-24 김영환 Semiconductor memory
KR100291194B1 (en) 1998-12-30 2001-06-01 박종섭 Read driving method and device in dial SDRAM
US6381659B2 (en) 1999-01-19 2002-04-30 Maxtor Corporation Method and circuit for controlling a first-in-first-out (FIFO) buffer using a bank of FIFO address registers capturing and saving beginning and ending write-pointer addresses
US6330636B1 (en) 1999-01-29 2001-12-11 Enhanced Memory Systems, Inc. Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank
US6233199B1 (en) 1999-02-26 2001-05-15 Micron Technology, Inc. Full page increment/decrement burst for DDR SDRAM/SGRAM
JP2000268566A (en) 1999-03-19 2000-09-29 Mitsubishi Electric Corp Synchronous type semiconductor storage device
US6338103B1 (en) 1999-03-24 2002-01-08 International Business Machines Corporation System for high-speed data transfer using a sequence of overlapped global pointer signals for generating corresponding sequence of non-overlapped local pointer signals
KR100287188B1 (en) 1999-04-06 2001-04-16 윤종용 Semiconductor memory device capable of data processing speed and efficiency of data pin and read-write control method thereof
US6381684B1 (en) 1999-04-26 2002-04-30 Integrated Device Technology, Inc. Quad data rate RAM
US6381661B1 (en) 1999-05-28 2002-04-30 3Com Corporation High throughput UART to DSP interface having Dual transmit and receive FIFO buffers to support data transfer between a host computer and an attached modem
KR100301056B1 (en) 1999-06-22 2001-11-01 윤종용 Synchronous data sampling circuit
DE19934500C2 (en) 1999-07-22 2001-10-31 Infineon Technologies Ag Synchronous integrated memory
US6240042B1 (en) 1999-09-02 2001-05-29 Micron Technology, Inc. Output circuit for a double data rate dynamic random access memory, double data rate dynamic random access memory, method of clocking data out from a double data rate dynamic random access memory and method of providing a data strobe signal
US6279073B1 (en) 1999-09-30 2001-08-21 Silicon Graphics, Inc. Configurable synchronizer for double data rate synchronous dynamic random access memory
JP2001118378A (en) 1999-10-15 2001-04-27 Internatl Business Mach Corp <Ibm> Fifo storage device and fifo control method
US6445642B2 (en) 1999-12-16 2002-09-03 Nec Corporation Synchronous double data rate DRAM
US6473838B1 (en) * 2000-01-04 2002-10-29 International Business Machines Corporation Data transfer system for multiple network processors using dual DRAM storage
US6154419A (en) 2000-03-13 2000-11-28 Ati Technologies, Inc. Method and apparatus for providing compatibility with synchronous dynamic random access memory (SDRAM) and double data rate (DDR) memory
US6400642B1 (en) 2000-03-24 2002-06-04 Cypress Semiconductor Corp. Memory architecture
US6240031B1 (en) 2000-03-24 2001-05-29 Cypress Semiconductor Corp. Memory architecture
US6377071B1 (en) 2000-03-31 2002-04-23 Cypress Semiconductor Corp. Composite flag generation for DDR FIFOs
JP2001290700A (en) 2000-04-07 2001-10-19 Mitsubishi Electric Corp Output fifo data transfer controller
JP3871853B2 (en) 2000-05-26 2007-01-24 株式会社ルネサステクノロジ Semiconductor device and operation method thereof
US6337830B1 (en) 2000-08-31 2002-01-08 Mosel Vitelic, Inc. Integrated clocking latency and multiplexer control technique for double data rate (DDR) synchronous dynamic random access memory (SDRAM) device data paths
US20020048201A1 (en) 2000-09-08 2002-04-25 Stmicroelectronics Ltd. First-in, first-out (FIFO) memory cell architecture
US6546461B1 (en) 2000-11-22 2003-04-08 Integrated Device Technology, Inc. Multi-port cache memory devices and FIFO memory devices having multi-port cache memory devices therein
JP2002175692A (en) * 2000-12-07 2002-06-21 Hitachi Ltd Semiconductor memory and data processing system
US20020089927A1 (en) 2001-01-11 2002-07-11 Fischer Michael A. System and method for synchronizing data trasnmission across a variable delay interface
KR100382736B1 (en) * 2001-03-09 2003-05-09 삼성전자주식회사 Semiconductor memory device having different data rates in read operation and write operation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421627A2 (en) * 1989-10-03 1991-04-10 Advanced Micro Devices, Inc. Memory device
JPH08202618A (en) * 1995-01-27 1996-08-09 Sony Corp Memory control circuit
EP0978842A1 (en) * 1998-08-04 2000-02-09 Samsung Electronics Co., Ltd. Synchronous burst semiconductor memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26) *

Also Published As

Publication number Publication date
CN100419667C (en) 2008-09-17
US6795360B2 (en) 2004-09-21
CN1571951A (en) 2005-01-26
US6778454B2 (en) 2004-08-17
US7158440B2 (en) 2007-01-02
WO2003019351A2 (en) 2003-03-06
US20050041450A1 (en) 2005-02-24
US20030206475A1 (en) 2003-11-06
US20030112685A1 (en) 2003-06-19
EP1419433A2 (en) 2004-05-19

Similar Documents

Publication Publication Date Title
WO2003019351A3 (en) Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability
AU2026999A (en) Data transferring in source-synchronous and common clock protocols
AU2001230959A1 (en) Dual clock domain read fifo
AU2003301938A1 (en) A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
EP0618585A3 (en) Semiconductor memory device synchronous with external clock signal for outputting data bits through a small number of data lines.
WO2003039061A3 (en) Clock domain crossing fifo
GB2370667B (en) Semiconductor memory device having altered clock frequency for address and/or command signals, and memory module and system having the same
AU6121100A (en) Magnetic memory coincident thermal pulse data storage
AU2001286556A1 (en) Synchronized write data on a high speed memory bus
WO2005098676A3 (en) Synchronous message queues
GB9808824D0 (en) A semiconductor memory device employing single data rate (SDR) and double data rate(DDR)
ID25532A (en) ADDITIONAL DATA PLANTING IN THE INFORMATION SIGNAL
GB9908544D0 (en) Transferring data between registers and memory
WO2004072774A3 (en) Double data rate memory interface
CA2106271A1 (en) Single and multistage stage fifo designs for data transfer synchronizers
GB9905194D0 (en) Sychronisation in digital data transmission systems
GB2419069B (en) Handling jitter in differential data signals
EP1346364B8 (en) Data processing device with a write once memory (wom)
EP1195995A3 (en) Recompression of data in memory
AU6514100A (en) Multiple data rate memory
AU2001251169A1 (en) Synchronous flash memory with concurrent write and read operation
AU2001269069A1 (en) Secure data storage on open systems
CA2480222A1 (en) Selectable clocking architecture
AU2002313783A1 (en) Fifo memory devices having single data rate (sdr) and dual data rate (ddr) capability
TW440046U (en) Sheet-carrying mechanism of disk type data storage device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DE DM DZ EC EE ES FI GB GD GE GH HR HU ID IL IN IS JP KE KG KP KR LC LK LR LS LT LU LV MA MD MG MN MW MX MZ NO NZ OM PH PL PT RU SD SE SG SI SK SL TJ TM TN TR TZ UA UG US UZ VC VN YU ZA ZM

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE BG CH CY CZ DK EE ES FI FR GB GR IE IT LU MC PT SE SK TR BF BJ CF CG CI GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002753502

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20028207793

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002753502

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

WWW Wipo information: withdrawn in national office

Ref document number: 2002753502

Country of ref document: EP