WO2003021693A3 - Elevated pore phase-change memory - Google Patents

Elevated pore phase-change memory Download PDF

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Publication number
WO2003021693A3
WO2003021693A3 PCT/US2002/026375 US0226375W WO03021693A3 WO 2003021693 A3 WO2003021693 A3 WO 2003021693A3 US 0226375 W US0226375 W US 0226375W WO 03021693 A3 WO03021693 A3 WO 03021693A3
Authority
WO
WIPO (PCT)
Prior art keywords
change memory
phase
elevated
pore phase
insulator
Prior art date
Application number
PCT/US2002/026375
Other languages
French (fr)
Other versions
WO2003021693A2 (en
Inventor
Tyler A Lowrey
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Priority to KR10-2004-7002594A priority Critical patent/KR100534530B1/en
Priority to JP2003525922A priority patent/JP4150667B2/en
Publication of WO2003021693A2 publication Critical patent/WO2003021693A2/en
Publication of WO2003021693A3 publication Critical patent/WO2003021693A3/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

An elevated phase-change memory cell (10) facilitates manufacture of phase-change memories by physically separating the fabrication of the phase-change memory components from the rest of the semiconductor substrate (12). In one embodiment, a contact (16) in the substrate (12) may be electrically coupled to a cup-shaped conductor (18) filled with an insulator 20). The conductor (18) couples current up to the elevated pore while the insulator (20) thermally and electrically isolates the pore.
PCT/US2002/026375 2001-08-31 2002-08-20 Elevated pore phase-change memory WO2003021693A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR10-2004-7002594A KR100534530B1 (en) 2001-08-31 2002-08-20 Elevated pore phase-change memory
JP2003525922A JP4150667B2 (en) 2001-08-31 2002-08-20 Phase change memory with higher pore position

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/944,478 2001-08-31
US09/944,478 US6764894B2 (en) 2001-08-31 2001-08-31 Elevated pore phase-change memory

Publications (2)

Publication Number Publication Date
WO2003021693A2 WO2003021693A2 (en) 2003-03-13
WO2003021693A3 true WO2003021693A3 (en) 2003-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/026375 WO2003021693A2 (en) 2001-08-31 2002-08-20 Elevated pore phase-change memory

Country Status (5)

Country Link
US (2) US6764894B2 (en)
JP (1) JP4150667B2 (en)
KR (1) KR100534530B1 (en)
TW (1) TW579593B (en)
WO (1) WO2003021693A2 (en)

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Publication number Publication date
JP4150667B2 (en) 2008-09-17
JP2005525690A (en) 2005-08-25
KR100534530B1 (en) 2005-12-07
US6764894B2 (en) 2004-07-20
US20030116794A1 (en) 2003-06-26
WO2003021693A2 (en) 2003-03-13
US7326952B2 (en) 2008-02-05
KR20040032955A (en) 2004-04-17
US20040202033A1 (en) 2004-10-14
TW579593B (en) 2004-03-11

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