WO2003031955A1 - Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces - Google Patents
Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces Download PDFInfo
- Publication number
- WO2003031955A1 WO2003031955A1 PCT/EP2002/011011 EP0211011W WO03031955A1 WO 2003031955 A1 WO2003031955 A1 WO 2003031955A1 EP 0211011 W EP0211011 W EP 0211011W WO 03031955 A1 WO03031955 A1 WO 03031955A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mirror
- sensor
- image
- concave mirror
- mask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 title claims abstract description 12
- 238000005259 measurement Methods 0.000 title claims abstract description 11
- 238000011835 investigation Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000012876 topography Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Definitions
- microelectronics industry requires perfectly flat, mirror like surfaces having defect-free single-crystal wafers as a base for the production of integrated circuits and components; any deviation from the ideal plane makes the manufacturing process difficult or even impossible or the yield of the manufactured circuits decreases. Such defects may often originate during the individual steps of the crystal and wafer production (cutting, polishing). Many of the technological phases of the production of the integrated circuits (annealing, layer deposition, patterning) may cause curving or warp of the originally flat surface. Consequently, the investigation of the flatness is crucial both for the wafer manufacturer and the consumer. Having a suitable investigating procedure the, wafers can be screened before using them, thus sparing many expensive technological steps. Not only the microelectronics industry requires the investigation of the mirror like surfaces; similar requirements have to be met for optical components, for some precision mechanical parts, as well as for the optical and magnetic disks of the IT industry. For the investigating procedure the following requirements should be met:
- the requirement of the non-contact operation is met mainly by optical means.
- the scanning laser beam and the interferometric methods are used.
- the scanning laser beam procedure uses a small-diameter parallel laser beam that scans the surface and from the position of the reflected laser beam the surface gradient of the actual surface point is determined, providing the surface topography.
- the disadvantage of the technique is its low speed, high cost and the need for high precision alignments.
- the interferometric procedures can measure only small-area surfaces.
- the homogeneous parallel beam 2 falls on the surface 1 to be investigated. If the surface is perfectly flat, then a homogeneous spot appears on the screen 3 positioned at a certain distance away from the surface. If the surface is not uniformly flat, the parallelism of the reflected beam is disturbed causing non-uniformity in its intensity distribution and an image appears on the screen that reflects the topography of the surface. For example, the dent 4 focuses the beam causing an intensity maximum 6 on the screen, while a hillock 5 defocuses the beam that results in an intensity minimum 7.
- the sensitivity of the technique increases with increasing sample-screen distance.
- this basic set-up can be replaced by other, optically equivalent set-ups.
- the collimated beam can advantageously be produced by a point source located in the focal point of a lens or a concave mirror.
- the beam reflected from the sample can pass through the lens or can be reflected from the concave mirror and the image can appear on a CCD camera.
- the sensitivity of the method meets the strictest requirements of the semiconductor industry: detection of a 0.05 ⁇ m deep surface dent over a 0.5 mm distance has been reported.
- the disadvantage of the method is the lack of the quantitative evaluation.
- Laczik in the patent No. WO 00/29835, completed a set-up described above, by taking two pictures at two different sample-screen distances; the surface topography and reflectivity map was determined by the iteration of the diffraction integrals of the surface.
- the method can provide quantitative results, but the disadvantage is the extreme slowness of the algorithm and the high requirements concerning the quality of the beam and the mechanical adjustments.
- Fig. 2 shows the set-up described by Yang that is similar to the magic mirror arrangement [K. H. Yang, Journal of the Electrochemical Society, Vol. 132. p. 1214. 1985]: a light beam collimated by means of collimator 1 falls to the surface 3 and the reflected image is formed on the screen 4 located some distance away from the surface. The illuminating beam traverses a quadratic grid 2, and from the position of the image of the grid points a suitable algorithm calculates the curvature of the surface. The reported evaluation method is suitable only to determine uniform curvatures.
- a further disadvantage is that, as a consequence of the great grid-sample and grid-screen distances, the diffraction effects cause blurring of the image of the grid, this results in an inaccurate determination of the grid points, thus the error of the method increases. Greater deformation may cause an overlap of the image of the grid points that inhibits evaluation, and limits the density of the grid points decreasing the achievable lateral resolution. The non-normal incident angle causes additional distortions.
- Another serious disadvantage is the great size of the set-up (several meters).
- the Hartman test is known for the evaluation of optical components, especially astronomic mirrors of large diameter, by means of projected masks.
- Optical shop testing ed. D. Malacara, John Wiley and Sons, New York, 1978, p. 323.
- a typical realization of the technique is shown in Fig. 3.
- the light of the point source 1 is projected to the surface to be investigated 3 through a mask 2, which is an opaque plate with holes; the beam reflected through the holes reaches the screen 4.
- the, height of the point (x,y) compared to a reference point having an arbitrarily chosen height of zero can be calculated by the summation approximation of an integral where the summation is carried out between the reference and the given point on the route defined by the neighboring holes of the mask.
- the members of the said summation are the product of three quantities: a geometrical constant characteristic to the optical lay-out, the difference of the measured coordinates of the ideally flat and the real surface and the distance between the given and the neighboring points. For example, for quadratic grids the calculation can be carried out by the equation:
- Ax and Ay are the lengths of the grid projected on the sample surface
- (f x practice fy,) are the measured coordinates of the image of the surface point (xonul y,)
- (x, ', y,') are the coordinates of the image of the point (x exc y ) for an ideal flat surface.
- more accurate but essentially not different integral approximations can be used.
- the subject of the present invention is, on one hand, a measurement set-up for the non-contact, fast quantitative topographic investigation of semiconductor wafers and other mirror-like surfaces, which consists of an essentially point light source 1, a concave mirror 4 that makes the beam of the light source parallel and projects the collimated light beam onto the studied surface 5, a structured pattern mask 3 situated between the mentioned light source and the mentioned mirror, and an image sensor 6 situated in the path of the light beam reflected from the mirror mentioned above.
- a computer 8 is connected through an appropriate interface 7 to the sensor, which, on one hand, visualises the image sensed by the sensor on a monitor 9 connected to it, and, on the other hand, with a suitable algorithm (e.g., a correlation method), determines the position of the image elements of the mask's image.
- a suitable algorithm e.g., a correlation method
- the subject of the invention is a measurement procedure, which, determines the surface topography of semiconductor wafers and other mirror-like surfaces from the coordinates of the image elements described above and the coordinates of the image elements of a flat reference surface by means of the set-up described above and the algorithm of the Hartmann test described above.
- An essential point of the invention is that the position of the mask 3 and image sensor 6 is chosen in such a way that an essentially sharp image of the mask is formed on the sensor surface, thus the accuracy of the determination of the mask's image elements and consequently the accuracy, lateral resolution and dynamic range of the measurement procedure is markedly improved.
- a collimating lens is placed in front of the light source 1 in its optical path; this lens makes the light beam emitted by the light source less divergent, thus the light source can be placed closer to the mask 3 thus the size of the measurement apparatus can be decreased.
- a laser light whose source is made divergent by means of a converging lens, is applied in place of the light source 1.
- a converging or diverging lens is placed in front of the image sensor 6, thus an appropriate magnification and sensitivity can be set-up.
- the light path enclosed by the image sensor 6 and studied surface 5 or the light path enclosed by the light source 1 studied surface and situated on either side of the mask 3 is folded by one or more plane mirror(s), among which mirrors one or more can be semi-transparent; this way, the size of the measurement set-up can be decreased.
- the concave mirror 4 is an off-axis parabolic mirror, in whose focal point the point light source is situated.
- the advantage of the application of the off-axis parabolic mirror is that the respective light paths are perpendicular to the surface of the mask, to the studied surface and to the image sensor, thus the errors associated with the non-normal light incidence of previous set-ups are decreased.
- Another advantage of the off-axis parabolic mirror over to spherical mirrors and lenses is the lack of optical aberrations.
- the most preferred embodiment of the invention is shown in Fig. 4: the light beam that is reflected first from the studied surface, then from the concave mirror 4 is projected onto the surface of the image sensor 6 by a semi-transparent mirror.
- the invention is suitable for the fast (in practice, real-time), quantitative, automated, reproducible determination of the surface topography the lateral resolution is improved
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60212987T DE60212987T2 (en) | 2001-10-02 | 2002-10-01 | Device for rapid, quantitative, contactless topographic examination of semiconductor wafers or mirror-like surfaces |
EP02785145A EP1434981B1 (en) | 2001-10-02 | 2002-10-01 | Apparatus for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces |
US10/814,252 US7133140B2 (en) | 2001-10-02 | 2004-04-01 | Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
HUP0104057 | 2001-10-02 | ||
HU0104057A HUP0104057A2 (en) | 2001-10-02 | 2001-10-02 | Measuring arrangement and method for the fast quantitative topographical examination of semi-conductor slices and other mirror-like surfaces |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/814,252 Continuation US7133140B2 (en) | 2001-10-02 | 2004-04-01 | Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003031955A1 true WO2003031955A1 (en) | 2003-04-17 |
Family
ID=89979741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/011011 WO2003031955A1 (en) | 2001-10-02 | 2002-10-01 | Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces |
Country Status (6)
Country | Link |
---|---|
US (1) | US7133140B2 (en) |
EP (1) | EP1434981B1 (en) |
AT (1) | ATE332498T1 (en) |
DE (1) | DE60212987T2 (en) |
HU (1) | HUP0104057A2 (en) |
WO (1) | WO2003031955A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
EP1434981B1 (en) | 2006-07-05 |
US20040263864A1 (en) | 2004-12-30 |
ATE332498T1 (en) | 2006-07-15 |
HUP0104057A2 (en) | 2003-06-28 |
US7133140B2 (en) | 2006-11-07 |
DE60212987T2 (en) | 2007-09-06 |
HU0104057D0 (en) | 2001-11-28 |
DE60212987D1 (en) | 2006-08-17 |
EP1434981A1 (en) | 2004-07-07 |
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