WO2003034437A3 - Writing to a mram element comprising a synthetic antiferromagnetic layer - Google Patents

Writing to a mram element comprising a synthetic antiferromagnetic layer Download PDF

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Publication number
WO2003034437A3
WO2003034437A3 PCT/US2002/030437 US0230437W WO03034437A3 WO 2003034437 A3 WO2003034437 A3 WO 2003034437A3 US 0230437 W US0230437 W US 0230437W WO 03034437 A3 WO03034437 A3 WO 03034437A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive memory
writing
antiferromagnetic layer
synthetic antiferromagnetic
mram element
Prior art date
Application number
PCT/US2002/030437
Other languages
French (fr)
Other versions
WO2003034437A2 (en
Inventor
Leonid Di Savtchenko
Bradley N Engel
Nicholas D Rizzo
Mark F Deherrera
Jason Allen Janesky
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to KR1020047006280A priority Critical patent/KR100898875B1/en
Priority to CN028227050A priority patent/CN1610949B/en
Priority to JP2003537077A priority patent/JP4292239B2/en
Priority to AU2002327059A priority patent/AU2002327059A1/en
Priority to EP02761824A priority patent/EP1474807A2/en
Publication of WO2003034437A2 publication Critical patent/WO2003034437A2/en
Publication of WO2003034437A3 publication Critical patent/WO2003034437A3/en
Priority to HK05107472.7A priority patent/HK1075321A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Abstract

A method to switch a scalable magnetoresistive memory cell (10) including the steps of providing a magnetoresistive memory device (3) sandwiched between a word line (20) and a digit line (30) so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
PCT/US2002/030437 2001-10-16 2002-09-24 Writing to a mram element comprising a synthetic antiferromagnetic layer WO2003034437A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020047006280A KR100898875B1 (en) 2001-10-16 2002-09-24 Writing to a scalable MRAM element
CN028227050A CN1610949B (en) 2001-10-16 2002-09-24 Method for switching magnetic resistance memory device and magnetic resistance array
JP2003537077A JP4292239B2 (en) 2001-10-16 2002-09-24 Method for writing to a scalable magnetoresistive random access memory element
AU2002327059A AU2002327059A1 (en) 2001-10-16 2002-09-24 Writing to a mram element comprising a synthetic antiferromagnetic layer
EP02761824A EP1474807A2 (en) 2001-10-16 2002-09-24 Writing to a scalable mram element
HK05107472.7A HK1075321A1 (en) 2001-10-16 2005-08-25 A method of switching a magnetoresistive memory device and magnetoresistive array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/978,859 US6545906B1 (en) 2001-10-16 2001-10-16 Method of writing to scalable magnetoresistance random access memory element
US09/978,859 2001-10-16

Publications (2)

Publication Number Publication Date
WO2003034437A2 WO2003034437A2 (en) 2003-04-24
WO2003034437A3 true WO2003034437A3 (en) 2003-08-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/030437 WO2003034437A2 (en) 2001-10-16 2002-09-24 Writing to a mram element comprising a synthetic antiferromagnetic layer

Country Status (9)

Country Link
US (2) US6545906B1 (en)
EP (1) EP1474807A2 (en)
JP (1) JP4292239B2 (en)
KR (1) KR100898875B1 (en)
CN (1) CN1610949B (en)
AU (1) AU2002327059A1 (en)
HK (1) HK1075321A1 (en)
TW (1) TW583666B (en)
WO (1) WO2003034437A2 (en)

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* Cited by examiner, † Cited by third party
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