WO2003041110A3 - Method for molding a polymer surface - Google Patents

Method for molding a polymer surface Download PDF

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Publication number
WO2003041110A3
WO2003041110A3 PCT/US2002/035667 US0235667W WO03041110A3 WO 2003041110 A3 WO2003041110 A3 WO 2003041110A3 US 0235667 W US0235667 W US 0235667W WO 03041110 A3 WO03041110 A3 WO 03041110A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
workpiece pad
pad
micro
structures
Prior art date
Application number
PCT/US2002/035667
Other languages
French (fr)
Other versions
WO2003041110A2 (en
Inventor
Bryan Lagos
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Priority to AU2002363558A priority Critical patent/AU2002363558A1/en
Priority to JP2003543056A priority patent/JP2005509253A/en
Priority to EP02802866A priority patent/EP1444716A2/en
Publication of WO2003041110A2 publication Critical patent/WO2003041110A2/en
Publication of WO2003041110A3 publication Critical patent/WO2003041110A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulding By Coating Moulds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a system and apparatus by which a workpiece pad is supplied to support workpieces being implanted in a rotating or spinning batch implanter process disk. The workpiece pad provides reduced surface adhesion forces and sufficient heat transfer from the workpieces to the process disk, and furthermore reduces particle generation and contamination of the workpiece from the workpiece pad. The workpiece pad furthermore comprises an ordered array of micro-structures. In addition, the invention includes a method of forming a workpiece pad comprising an ordered array of micro-structures.
PCT/US2002/035667 2001-11-07 2002-11-07 Method for molding a polymer surface WO2003041110A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002363558A AU2002363558A1 (en) 2001-11-07 2002-11-07 Method for molding a polymer surface
JP2003543056A JP2005509253A (en) 2001-11-07 2002-11-07 A method for forming polymer surfaces that reduces particle generation and surface adhesion while maintaining high heat transfer coefficient
EP02802866A EP1444716A2 (en) 2001-11-07 2002-11-07 A method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/045,363 2001-11-07
US10/045,363 US6593699B2 (en) 2001-11-07 2001-11-07 Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient

Publications (2)

Publication Number Publication Date
WO2003041110A2 WO2003041110A2 (en) 2003-05-15
WO2003041110A3 true WO2003041110A3 (en) 2003-11-06

Family

ID=21937451

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/035667 WO2003041110A2 (en) 2001-11-07 2002-11-07 Method for molding a polymer surface

Country Status (8)

Country Link
US (2) US6593699B2 (en)
EP (1) EP1444716A2 (en)
JP (1) JP2005509253A (en)
KR (1) KR20050056918A (en)
CN (1) CN1613129A (en)
AU (1) AU2002363558A1 (en)
TW (1) TWI283015B (en)
WO (1) WO2003041110A2 (en)

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US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
DE102006035644A1 (en) * 2006-07-31 2008-02-14 Advanced Micro Devices, Inc., Sunnyvale A method of reducing contamination by providing a polymeric protective layer to be removed during processing of microstructures
US8123828B2 (en) * 2007-12-27 2012-02-28 3M Innovative Properties Company Method of making abrasive shards, shaped abrasive particles with an opening, or dish-shaped abrasive particles
EP2242618B1 (en) 2007-12-27 2020-09-23 3M Innovative Properties Company Shaped, fractured abrasive particle, abrasive article using same and method of making
US10137556B2 (en) * 2009-06-22 2018-11-27 3M Innovative Properties Company Shaped abrasive particles with low roundness factor
US8142532B2 (en) * 2008-12-17 2012-03-27 3M Innovative Properties Company Shaped abrasive particles with an opening
US8142891B2 (en) * 2008-12-17 2012-03-27 3M Innovative Properties Company Dish-shaped abrasive particles with a recessed surface
US8142531B2 (en) 2008-12-17 2012-03-27 3M Innovative Properties Company Shaped abrasive particles with a sloping sidewall
EP2370232B1 (en) * 2008-12-17 2015-04-08 3M Innovative Properties Company Shaped abrasive particles with grooves
US8480772B2 (en) * 2009-12-22 2013-07-09 3M Innovative Properties Company Transfer assisted screen printing method of making shaped abrasive particles and the resulting shaped abrasive particles
EP2658680B1 (en) 2010-12-31 2020-12-09 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles comprising abrasive particles having particular shapes and methods of forming such articles
CN103764349B (en) 2011-06-30 2017-06-09 圣戈本陶瓷及塑料股份有限公司 Liquid phase sintering silicon carbide abrasive grains
WO2013003830A2 (en) 2011-06-30 2013-01-03 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles including abrasive particles of silicon nitride
EP2760639B1 (en) 2011-09-26 2021-01-13 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles including abrasive particulate materials, coated abrasives using the abrasive particulate materials and methods of forming
BR112014016159A8 (en) 2011-12-30 2017-07-04 Saint Gobain Ceramics formation of molded abrasive particles
KR20140106713A (en) 2011-12-30 2014-09-03 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Shaped abrasive particle and method of forming same
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CA3170246A1 (en) 2012-01-10 2013-07-18 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having complex shapes and methods of forming same
EP2830829B1 (en) 2012-03-30 2018-01-10 Saint-Gobain Abrasives, Inc. Abrasive products having fibrillated fibers
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US10106714B2 (en) 2012-06-29 2018-10-23 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having particular shapes and methods of forming such particles
RU2614488C2 (en) 2012-10-15 2017-03-28 Сен-Гобен Абразивс, Инк. Abrasive particles, having certain shapes, and methods of such particles forming
US9074119B2 (en) 2012-12-31 2015-07-07 Saint-Gobain Ceramics & Plastics, Inc. Particulate materials and methods of forming same
CN105073343B (en) 2013-03-29 2017-11-03 圣戈班磨料磨具有限公司 Abrasive particle with given shape, the method for forming this particle and application thereof
TW201502263A (en) 2013-06-28 2015-01-16 Saint Gobain Ceramics Abrasive article including shaped abrasive particles
MX2016004000A (en) 2013-09-30 2016-06-02 Saint Gobain Ceramics Shaped abrasive particles and methods of forming same.
EP3089851B1 (en) 2013-12-31 2019-02-06 Saint-Gobain Abrasives, Inc. Abrasive article including shaped abrasive particles
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same
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WO2001026141A2 (en) * 1999-10-01 2001-04-12 Varian Semiconductor Equipment Associates, Inc. Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure

Also Published As

Publication number Publication date
AU2002363558A1 (en) 2003-05-19
WO2003041110A2 (en) 2003-05-15
US6593699B2 (en) 2003-07-15
US20030085204A1 (en) 2003-05-08
US20030201724A1 (en) 2003-10-30
EP1444716A2 (en) 2004-08-11
CN1613129A (en) 2005-05-04
TW200300272A (en) 2003-05-16
US6779263B2 (en) 2004-08-24
KR20050056918A (en) 2005-06-16
JP2005509253A (en) 2005-04-07
TWI283015B (en) 2007-06-21

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