WO2003050876A3 - Self aligned compact bipolar junction transistor layout, and method of making same - Google Patents

Self aligned compact bipolar junction transistor layout, and method of making same Download PDF

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Publication number
WO2003050876A3
WO2003050876A3 PCT/US2002/039405 US0239405W WO03050876A3 WO 2003050876 A3 WO2003050876 A3 WO 2003050876A3 US 0239405 W US0239405 W US 0239405W WO 03050876 A3 WO03050876 A3 WO 03050876A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar junction
junction transistor
making same
self aligned
transistor layout
Prior art date
Application number
PCT/US2002/039405
Other languages
French (fr)
Other versions
WO2003050876A2 (en
Inventor
Mark Bohr
Shahriar Ahmed
Stephen Chambers
Richard Green
Anand Murthy
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to AU2002366553A priority Critical patent/AU2002366553A1/en
Priority to EP02791402A priority patent/EP1451864A2/en
Publication of WO2003050876A2 publication Critical patent/WO2003050876A2/en
Publication of WO2003050876A3 publication Critical patent/WO2003050876A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation

Abstract

The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate (112). Thereafter, a spacer (136) is formed at the topology. A base layer (140) is formed from epitaxial silicon above the spacer (136) and at the topology. A leakage block (158) is formed in the substrate by out-diffusion from the spacer (136). Thereafter a BJT is completed with the base layer (140) and the spacer (136).
PCT/US2002/039405 2001-12-10 2002-12-10 Self aligned compact bipolar junction transistor layout, and method of making same WO2003050876A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002366553A AU2002366553A1 (en) 2001-12-10 2002-12-10 Self aligned compact bipolar junction transistor layout, and method of making same
EP02791402A EP1451864A2 (en) 2001-12-10 2002-12-10 Self aligned compact bipolar junction transistor layout, and method of making same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/013,225 US6579771B1 (en) 2001-12-10 2001-12-10 Self aligned compact bipolar junction transistor layout, and method of making same
US10/013,225 2001-12-10

Publications (2)

Publication Number Publication Date
WO2003050876A2 WO2003050876A2 (en) 2003-06-19
WO2003050876A3 true WO2003050876A3 (en) 2003-12-18

Family

ID=21758880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/039405 WO2003050876A2 (en) 2001-12-10 2002-12-10 Self aligned compact bipolar junction transistor layout, and method of making same

Country Status (7)

Country Link
US (2) US6579771B1 (en)
EP (1) EP1451864A2 (en)
CN (1) CN1320613C (en)
AU (1) AU2002366553A1 (en)
MY (1) MY122957A (en)
TW (1) TWI221338B (en)
WO (1) WO2003050876A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7288829B2 (en) * 2004-11-10 2007-10-30 International Business Machines Corporation Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
US20080121932A1 (en) 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
GB0507157D0 (en) * 2005-04-08 2005-05-18 Ami Semiconductor Belgium Bvba Double trench for isolation of semiconductor devices
US7329940B2 (en) * 2005-11-02 2008-02-12 International Business Machines Corporation Semiconductor structure and method of manufacture
US7342293B2 (en) * 2005-12-05 2008-03-11 International Business Machines Corporation Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same
US20070132034A1 (en) * 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same
US7936041B2 (en) 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US8552532B2 (en) * 2012-01-04 2013-10-08 International Business Machines Corporation Self aligned structures and design structure thereof
US8940637B2 (en) 2012-07-05 2015-01-27 Globalfoundries Singapore Pte. Ltd. Method for forming through silicon via with wafer backside protection
US10367083B2 (en) 2016-03-25 2019-07-30 Globalfoundries Inc. Compact device structures for a bipolar junction transistor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0189136A2 (en) * 1985-01-17 1986-07-30 Kabushiki Kaisha Toshiba Bipolar semiconductor device and method of manufacturing the same
US4830972A (en) * 1987-02-06 1989-05-16 Kabushiki Kaisha Toshiba Method of manufacturing bipolar transistor
US5523245A (en) * 1994-05-12 1996-06-04 Nec Corporation Process for fabricating high-performance facet-free small-sized bipolar transistor
EP0779663A2 (en) * 1995-12-15 1997-06-18 Kabushiki Kaisha Toshiba Epitaxial-base bipolar transistor and method of manufacturing the same
EP1058302A1 (en) * 1999-05-31 2000-12-06 STMicroelectronics SA Method of manufacturing bipolar devices having self-aligned base-emitter junction
US20010048134A1 (en) * 1998-11-07 2001-12-06 Kang-Wook Park Bipolar junction transistors having trench-based base electrodes

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Publication number Priority date Publication date Assignee Title
US4142117A (en) * 1977-04-11 1979-02-27 Precision Monolithics, Inc. Voltage sensitive supercharger for a sample and hold integrated circuit
US4330569A (en) * 1979-05-25 1982-05-18 Ncr Corporation Method for conditioning nitride surface
JPS61170934A (en) 1985-01-25 1986-08-01 Hitachi Ltd Optical disk recording device
US5024957A (en) * 1989-02-13 1991-06-18 International Business Machines Corporation Method of fabricating a bipolar transistor with ultra-thin epitaxial base
US5137840A (en) 1990-10-24 1992-08-11 International Business Machines Corporation Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
JP2855908B2 (en) * 1991-09-05 1999-02-10 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5837929A (en) * 1994-07-05 1998-11-17 Mantron, Inc. Microelectronic thermoelectric device and systems incorporating such device
JPH10326793A (en) * 1997-05-23 1998-12-08 Nec Corp Manufacture of semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0189136A2 (en) * 1985-01-17 1986-07-30 Kabushiki Kaisha Toshiba Bipolar semiconductor device and method of manufacturing the same
US4830972A (en) * 1987-02-06 1989-05-16 Kabushiki Kaisha Toshiba Method of manufacturing bipolar transistor
US5523245A (en) * 1994-05-12 1996-06-04 Nec Corporation Process for fabricating high-performance facet-free small-sized bipolar transistor
EP0779663A2 (en) * 1995-12-15 1997-06-18 Kabushiki Kaisha Toshiba Epitaxial-base bipolar transistor and method of manufacturing the same
US20010048134A1 (en) * 1998-11-07 2001-12-06 Kang-Wook Park Bipolar junction transistors having trench-based base electrodes
EP1058302A1 (en) * 1999-05-31 2000-12-06 STMicroelectronics SA Method of manufacturing bipolar devices having self-aligned base-emitter junction

Also Published As

Publication number Publication date
AU2002366553A8 (en) 2003-06-23
AU2002366553A1 (en) 2003-06-23
EP1451864A2 (en) 2004-09-01
MY122957A (en) 2006-05-31
CN1524290A (en) 2004-08-25
WO2003050876A2 (en) 2003-06-19
TW200308086A (en) 2003-12-16
TWI221338B (en) 2004-09-21
US6579771B1 (en) 2003-06-17
CN1320613C (en) 2007-06-06
US20030109108A1 (en) 2003-06-12
US7202514B2 (en) 2007-04-10
US20030219939A1 (en) 2003-11-27

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