WO2003055014A3 - Semiconductor saturable absorber mirror device - Google Patents

Semiconductor saturable absorber mirror device Download PDF

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Publication number
WO2003055014A3
WO2003055014A3 PCT/CH2002/000680 CH0200680W WO03055014A3 WO 2003055014 A3 WO2003055014 A3 WO 2003055014A3 CH 0200680 W CH0200680 W CH 0200680W WO 03055014 A3 WO03055014 A3 WO 03055014A3
Authority
WO
WIPO (PCT)
Prior art keywords
field
design
absorber
spacer layer
saturable absorber
Prior art date
Application number
PCT/CH2002/000680
Other languages
French (fr)
Other versions
WO2003055014A2 (en
Inventor
Kurt Weingarten
Gabriel J Spuehler
Ursula Keller
Lukas Krainer
Original Assignee
Giga Tera Ag
Kurt Weingarten
Gabriel J Spuehler
Ursula Keller
Lukas Krainer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Giga Tera Ag, Kurt Weingarten, Gabriel J Spuehler, Ursula Keller, Lukas Krainer filed Critical Giga Tera Ag
Priority to AU2002349251A priority Critical patent/AU2002349251A1/en
Priority to EP02781045.6A priority patent/EP1456916B1/en
Publication of WO2003055014A2 publication Critical patent/WO2003055014A2/en
Publication of WO2003055014A3 publication Critical patent/WO2003055014A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3523—Non-linear absorption changing by light, e.g. bleaching

Abstract

According to this invention, a 'low field enhancement' (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.
PCT/CH2002/000680 2001-12-10 2002-12-10 Semiconductor saturable absorber mirror device WO2003055014A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002349251A AU2002349251A1 (en) 2001-12-10 2002-12-10 Semiconductor saturable absorber mirror device
EP02781045.6A EP1456916B1 (en) 2001-12-10 2002-12-10 Semiconductor saturable absorber mirror device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/16,350 2001-12-10
US10/016,530 US6538298B1 (en) 2001-12-10 2001-12-10 Semiconductor saturable absorber mirror

Publications (2)

Publication Number Publication Date
WO2003055014A2 WO2003055014A2 (en) 2003-07-03
WO2003055014A3 true WO2003055014A3 (en) 2004-02-12

Family

ID=21777593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2002/000680 WO2003055014A2 (en) 2001-12-10 2002-12-10 Semiconductor saturable absorber mirror device

Country Status (4)

Country Link
US (1) US6538298B1 (en)
EP (1) EP1456916B1 (en)
AU (1) AU2002349251A1 (en)
WO (1) WO2003055014A2 (en)

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US6418156B1 (en) * 1998-11-12 2002-07-09 Raytheon Company Laser with gain medium configured to provide an integrated optical pump cavity
US6826219B2 (en) * 2002-03-14 2004-11-30 Gigatera Ag Semiconductor saturable absorber device, and laser
US7170915B2 (en) * 2003-07-23 2007-01-30 Intel Corporation Anti-reflective (AR) coating for high index gain media
US7590156B1 (en) 2004-05-17 2009-09-15 University Of Central Florida Research Foundation, Inc. High intensity MHz mode-locked laser
US20060029110A1 (en) * 2004-08-03 2006-02-09 Imra America, Inc. Cavity monitoring device for pulse laser
US7203209B2 (en) * 2005-01-19 2007-04-10 Bae Systems Information And Electronic Systems Integration Inc. System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser
EP1867013B1 (en) 2005-04-06 2012-01-11 Reflekron Oy Semiconductor saturable absorber reflector and method to fabricate thereof
DE102005017677B4 (en) * 2005-04-11 2007-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for designing a monolithically integrated, mode-locked semiconductor laser pulse source
EP2223396B1 (en) * 2007-12-18 2018-09-12 NKT Photonics A/S Mode-locked fiber laser with improved life-time of saturable absorber
DE102008013925B3 (en) * 2008-03-12 2009-05-07 Batop Gmbh Saturable absorber mirror for use as mode coupler for pulse lasers, has mechanical distance piece provided for changing thickness of air layer, which is formed between saturable absorber layer system and dielectric Bragg-mirror
US8178818B2 (en) * 2008-03-31 2012-05-15 Electro Scientific Industries, Inc. Photonic milling using dynamic beam arrays
US7982160B2 (en) * 2008-03-31 2011-07-19 Electro Scientific Industries, Inc. Photonic clock stabilized laser comb processing
EP2751565B1 (en) * 2011-08-31 2022-10-05 Helmholtz-Zentrum Dresden - Rossendorf e.V. Carrier material for electrically polarisable biomaterials, polyelectrolyte materials, atoms, ions and molecules; production and use thereof
US8724666B1 (en) * 2013-01-04 2014-05-13 Alcon Lensx, Inc. Self starting mode-locked laser oscillator
LT6045B (en) 2013-09-26 2014-06-25 Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Semiconductor saturable absorber mirror
WO2017189060A1 (en) 2016-04-25 2017-11-02 Regents Of The University Of Colorado, A Body Corporate Monolithic mode-locked laser
US10714900B2 (en) * 2018-06-04 2020-07-14 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
CN109818250B (en) * 2019-02-19 2019-12-20 武汉安扬激光技术有限责任公司 All-fiber sealed packaging structure and packaging method of semiconductor saturable absorption mirror

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO1996036906A1 (en) * 1995-05-19 1996-11-21 Keller Weingarten Ursula Optical component for generating pulsed laser radiation
US6252892B1 (en) * 1998-09-08 2001-06-26 Imra America, Inc. Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters
US20010021215A1 (en) * 1999-07-30 2001-09-13 Udo Bunting Compact ultra fast laser

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US4435809A (en) * 1981-09-14 1984-03-06 Bell Telephone Laboratories, Incorporated Passively mode locked laser having a saturable absorber
US5802084A (en) * 1994-11-14 1998-09-01 The Regents Of The University Of California Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
US5701327A (en) * 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
US6141359A (en) * 1998-01-30 2000-10-31 Lucent Technologies, Inc. Modelocking laser including self-tuning intensity-dependent reflector for self-starting and stable operation
US5987049A (en) * 1998-04-24 1999-11-16 Time-Bandwidth Products Ag Mode locked solid-state laser pumped by a non-diffraction-limited pumping source and method for generating pulsed laser radiation by pumping with a non-diffraction-limited pumping beam
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996036906A1 (en) * 1995-05-19 1996-11-21 Keller Weingarten Ursula Optical component for generating pulsed laser radiation
US6252892B1 (en) * 1998-09-08 2001-06-26 Imra America, Inc. Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters
US20010021215A1 (en) * 1999-07-30 2001-09-13 Udo Bunting Compact ultra fast laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SPUEHLER G J ET AL: "OUTPUT-COUPLING SEMICONDUCTOR SATURABLE ABSORBER MIRROR", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 18, 30 April 2001 (2001-04-30), pages 2733 - 2735, XP001059520, ISSN: 0003-6951 *
THOEN ET AL: "TWO-PHOTON ABSORPTION IN SEMICONDUCTOR SATURABLE ABSORBER MIRRORS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 74, no. 26, 28 June 1999 (1999-06-28), pages 3927 - 3929, XP000850628, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2003055014A2 (en) 2003-07-03
EP1456916A2 (en) 2004-09-15
EP1456916B1 (en) 2017-08-02
AU2002349251A1 (en) 2003-07-09
US6538298B1 (en) 2003-03-25
AU2002349251A8 (en) 2003-07-09

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