WO2003065119A3 - Overlay measurements using periodic gratings - Google Patents

Overlay measurements using periodic gratings Download PDF

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Publication number
WO2003065119A3
WO2003065119A3 PCT/US2003/002201 US0302201W WO03065119A3 WO 2003065119 A3 WO2003065119 A3 WO 2003065119A3 US 0302201 W US0302201 W US 0302201W WO 03065119 A3 WO03065119 A3 WO 03065119A3
Authority
WO
WIPO (PCT)
Prior art keywords
gratings
wafer
sets
overlay measurements
periodic gratings
Prior art date
Application number
PCT/US2003/002201
Other languages
French (fr)
Other versions
WO2003065119A2 (en
Inventor
Joerg Bischoff
Xinhui Niu
Nickhil Jakatdar
Original Assignee
Timbre Tech Inc
Joerg Bischoff
Xinhui Niu
Nickhil Jakatdar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Timbre Tech Inc, Joerg Bischoff, Xinhui Niu, Nickhil Jakatdar filed Critical Timbre Tech Inc
Priority to AU2003205325A priority Critical patent/AU2003205325A1/en
Publication of WO2003065119A2 publication Critical patent/WO2003065119A2/en
Publication of WO2003065119A3 publication Critical patent/WO2003065119A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

Overlay measurements for a semiconductor wafer (102) are obtained by forming a periodic grating (104) on the wafer having a first set of gratings and a second set of gratings. The first and second sets of gratings are formed on the wafer using a first mask (202) and a second mask (212), respectively. The first and second sets of gratings are intended to be formed on the wafer with an intended asymmetrical alignment. A diffraction signal (322) of the first and second sets of gratings is measured after the first and second sets of gratings are formed on the wafer. The misalignment between the first and second sets of gratings formed on the wafer is determined based on the measured diffraction signal.
PCT/US2003/002201 2002-01-31 2003-01-24 Overlay measurements using periodic gratings WO2003065119A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003205325A AU2003205325A1 (en) 2002-01-31 2003-01-24 Overlay measurements using periodic gratings

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/066,555 US6772084B2 (en) 2002-01-31 2002-01-31 Overlay measurements using periodic gratings
US10/066,555 2002-01-31

Publications (2)

Publication Number Publication Date
WO2003065119A2 WO2003065119A2 (en) 2003-08-07
WO2003065119A3 true WO2003065119A3 (en) 2003-12-11

Family

ID=27658687

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/002201 WO2003065119A2 (en) 2002-01-31 2003-01-24 Overlay measurements using periodic gratings

Country Status (4)

Country Link
US (1) US6772084B2 (en)
AU (1) AU2003205325A1 (en)
TW (1) TW578248B (en)
WO (1) WO2003065119A2 (en)

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Also Published As

Publication number Publication date
US6772084B2 (en) 2004-08-03
TW200302538A (en) 2003-08-01
AU2003205325A1 (en) 2003-09-02
TW578248B (en) 2004-03-01
US20030212525A1 (en) 2003-11-13
WO2003065119A2 (en) 2003-08-07

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