WO2003065450A3 - Integrated circuits with backside contacts and methods for their fabrication - Google Patents
Integrated circuits with backside contacts and methods for their fabrication Download PDFInfo
- Publication number
- WO2003065450A3 WO2003065450A3 PCT/US2002/041029 US0241029W WO03065450A3 WO 2003065450 A3 WO2003065450 A3 WO 2003065450A3 US 0241029 W US0241029 W US 0241029W WO 03065450 A3 WO03065450 A3 WO 03065450A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact
- sidewall
- dielectric
- backside
- contacts
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
To fabricate contacts on a wafer backside, openings (124) are formed in the face side of the wafer (104). A dielectric layer (140) and some contact material (150), e.g. metal, are deposited into the openings. Then the backside is etched until the contacts (150C) are exposed and protrude out. The protruding portion of each contact has an outer sidewall (150V). At least a portion of the sidewall is vertical or sloped outwards with respect to the opening when the contact is traced down. The contact is soldered to an another structure (410), e.g. a die or a PCB. The solder (420) reaches and at least partially covers the sidewall portion which is vertical or sloped outwards. The strength of the solder bond is improved as a result. The dielectric layer protrudes around each contact. The protruding portion (140P) of the dielectric becomes gradually thinner around each contact in the downward direction. The thinned dielectric is more flexible, and is less likely detach from the contact when the contact is pulled sideways. Other embodiments are also described.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/059,898 | 2002-01-28 | ||
US10/059,898 US6882030B2 (en) | 1996-10-29 | 2002-01-28 | Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003065450A2 WO2003065450A2 (en) | 2003-08-07 |
WO2003065450A3 true WO2003065450A3 (en) | 2004-04-08 |
Family
ID=27658269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/041029 WO2003065450A2 (en) | 2002-01-28 | 2002-12-18 | Integrated circuits with backside contacts and methods for their fabrication |
Country Status (2)
Country | Link |
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US (2) | US6882030B2 (en) |
WO (1) | WO2003065450A2 (en) |
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Also Published As
Publication number | Publication date |
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US20020084513A1 (en) | 2002-07-04 |
US20030085460A1 (en) | 2003-05-08 |
US6664129B2 (en) | 2003-12-16 |
WO2003065450A2 (en) | 2003-08-07 |
US6882030B2 (en) | 2005-04-19 |
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