WO2003071008A2 - Methods of and apparatus for making high aspect ratio microelectromechanical structures - Google Patents

Abstract

Various embodiments of the invention present techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion (ELEXTM) process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the ELEXTM process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of EFABTM.

Description

Title:

Methods of and Apparatus for Making High Aspect Ratio Microelectromechanical Structures

Related Cases:

This application claims priority to U.S. Provisional Patent Application No. 60/329,654 which was filed on October 15, 2001 and which is incorporated herein by reference as if set forth in full.

Field of the Invention:

The present invention relates generally to the field of Electrochemical Fabrication and the associated formation of three-dimensional structures (e.g. micro-scale or meso- scale structures). In particular, it relates to methods and apparatus for forming such three-dimensional structures using electrochemical deposition techniques, and even more particularly relates to the electrochemical extrusion of such structures via the relative movement of a mask and a substrate.

Background of the Invention:

A technique for forming three-dimensional structures/devices from a plurality of adhered layers was invented by Adam L. Cohen and is known as Electrochemical Fabrication. It is being commercially pursued by MEMGen™ Corporation of Burbank, California under the tradename EFAB™. This technique was described in US Patent No. 6,027,630, issued on February 22, 2000. This electrochemical deposition technique allows the selective deposition of a material using a unique masking technique that involves the use of a mask that includes patterned conformable material on a support structure that is independent of the substrate onto which plating will occur. When desiring to perform an electrodeposition using the mask, the conformable portion of the mask is brought into contact with a substrate while in the presence of a plating solution such that the contact of the conformable portion of the mask to the substrate inhibits deposition at selected locations. For convenience, these masks might be generically called conformable contact masks; the masking technique may be generically called a conformable contact mask plating process. More specifically, in the terminology of MEMGen™ Corporation of Burbank, California such masks have come to be known as INSTANT MASKS™ and the process known as INSTANT MASKING™ or INSTANT MASK™ plating. Selective depositions using conformable contact mask plating may be used to form single layers of material or may be used to form multi-layer structures. The teachings of the '630 patent are hereby incorporated herein by reference as if set forth in full herein. Since the filing of the patent application that led to the above noted patent, various papers about conformable contact mask plating (i.e. INSTANT MASKING) and electrochemical fabrication have been published:

1. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, "EFAB: Batch production of functional, fully-dense metal parts with micro-scale features", Proc. 9th Solid Freeform Fabrication, The University of Texas at Austin, p161 , Aug. 1998. 2. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, "EFAB: Rapid,

Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMS", Proc. 12th IEEE Micro Electro Mechanical Systems Workshop, IEEE, p244, Jan 1999. 3. A. Cohen, "3-D Micromachining by Electrochemical Fabrication", Micromachine Devices, March 1999. 4. G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P. Will, "EFAB: Rapid

Desktop Manufacturing of True 3-D Microstructures", Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., Apr. 1999.

5. F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated

Batch Process", 3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99), June 1999.

6. A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and P. Will, "EFAB: Low- Cost, Automated Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures", Micromachining and Microfabrication Process Technology,

SPIE 1999 Symposium on Micromachining and Microfabrication, September 1999.

7. F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P. Will, "EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process", MEMS Symposium, ASME 1999 International Mechanical

Engineering Congress and Exposition, November, 1999.

8. A. Cohen, "Electrochemical Fabrication (EFABTM)", Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press, 2002.

9. "Microfabrication - Rapid Prototyping's Killer Application", pages 1 - 5 of the Rapid Prototyping Report, CAD/CAM Publishing, Inc., June 1999. The disclosures of these nine publications are hereby incorporated herein by reference as if set forth in full herein.

The electrochemical deposition process may be carried out in a number of different ways as set forth in the above patent and publications. In one form, this process involves the execution of three separate operations during the formation of each layer of the structure that is to be formed:

1. Selectively depositing at least one material by electrodeposition upon one or more desired regions of a substrate.

2. Then, blanket depositing at least one additional material by electrodeposition so that the additional deposit covers both the regions that were previously selectively deposited onto, and the regions of the substrate that did not receive any previously applied selective depositions.

3. Finally, planarizing the materials deposited during the first and second operations to produce a smoothed surface of a first layer of desired thickness having at least one region containing the at least one material and at least one region containing at least the one additional material. After formation of the first layer, one or more additional layers may be formed adjacent to the immediately preceding layer and adhered to the smoothed surface of that preceding layer. These additional layers are formed by repeating the first through third operations one or more times wherein the formation of each subsequent layer treats the previously formed layers and the initial substrate as a new and thickening substrate.

Once the formation of all layers has been completed, at least a portion of at least one of the materials deposited is generally removed by an etching process to expose or release the three-dimensional structure that was intended to be formed.

The preferred method of performing the selective electrodeposition involved in the first operation is by conformable contact mask plating. In this type of plating, one or more conformable contact (CC) masks are first formed. The CC masks include a support structure onto which a patterned conformable dielectric material is adhered or formed. The conformable material for each mask is shaped in accordance with a particular cross-section of material to be plated. At least one CC mask is needed for each unique cross-sectional pattern that is to be plated.

The support for a CC mask is typically a plate-like structure formed of a metal that is to be selectively electroplated and from which material to be plated will be dissolved. In this typical approach, the support will act as an anode in an electroplating process. In an alternative approach, the support may instead be a porous or otherwise perforated material through which deposition material will pass during an electroplating operation on its way from a distal anode to a deposition surface. In either approach, it is possible for CC masks to share a common support, i.e. the patterns of conformable dielectric material for plating multiple layers of material may be located in different areas of a single support structure. When a single support structure contains multiple plating patterns, the entire structure is referred to as the CC mask while the individual plating masks may be referred to as "submasks". In the present application such a distinction will be made only when relevant to a specific point being made. In preparation for performing the selective deposition of the first operation, the conformable portion of the CC mask is placed in registration with and pressed against a selected portion of the substrate (or onto a previously formed layer or onto a previously deposited portion of a layer) on which deposition is to occur. The pressing together of the CC mask and substrate occur in such a way that all openings, in the conformable portions of the CC mask contain plating solution. The conformable material of the CC mask that contacts the substrate acts as a barrier to electrodeposition while the openings in the CC mask that are filled with electroplating solution act as pathways for transferring material from an anode (e.g. the CC mask support) to the non-contacted portions of the substrate (which act as a cathode during the plating operation) when an appropriate potential and/or current are supplied.

An example of a CC mask and CC mask plating are shown in Figures 1 (a) - 1 (c). Figure 1 (a) shows a side view of a CC mask 8 consisting of a conformable or deformable (e.g. elastomeric) insulator 10 patterned on an anode 12. The anode has two functions. Figure 1 (a) also depicts a substrate 6 separated from mask 8. One is as a supporting material for the patterned insulator 10 to maintain its integrity and alignment since the pattern may be topologically complex (e.g., involving isolated "islands" of insulator material). The other function is as an anode for the electroplating operation. CC mask plating selectively deposits material 22 onto a substrate 6 by simply pressing the insulator against the substrate then electrodepositing material through apertures 26a and 26b in the insulator as shown in Figure 1 (b). After deposition, the CC mask is separated, preferably non-destructively, from the substrate 6 as shown in Figure 1 (c). The CC mask plating process is distinct from a "through- mask" plating process in that in a through-mask plating process the separation of the masking material from the substrate would occur destructively. As with through-mask plating, CC mask plating deposits material selectively and simultaneously over the entire layer. The plated region may consist of one or more isolated plating regions where these isolated plating regions may belong to a single structure that is being formed or may belong to multiple structures that are being formed simultaneously. In CC mask plating as individual masks are not intentionally destroyed in the removal process, they may be usable in multiple plating operations.

Another example of a CC mask and CC mask plating is shown in Figures 1 (d) - 1 (f). Figure 1 (d) shows an anode 12' separated from a mask 8' that comprises a patterned conformable material 10' and a support structure 20. Figure 1 (d) also depicts substrate 6 separated from the mask 8'. Figure 1 (e) illustrates the mask 8' being brought into contact with the substrate 6. Figure 1 (f) illustrates the deposit 22' that results from conducting a current from the anode 12' to the substrate 6. Figure 1 (g) illustrates the deposit 22' on substrate 6 after separation from mask 8'. In this example, an appropriate electrolyte is located between the substrate 6 and the anode 12' and a current of ions coming from one or both of the solution and the anode are conducted through the opening in the mask to the substrate where material is deposited. This type of mask may be referred to as an anodeless INSTANT MASK™ (AIM) or as an anodeless conformable contact (ACC) mask.

Unlike through-mask plating, CC mask plating allows CC masks to be formed completely separate from the fabrication of the substrate on which plating is to occur (e.g. separate from a three-dimensional (3D) structure that is being formed). CC masks may be formed in a variety of ways, for example, a photolithographic process may be used. All masks can be generated simultaneously, prior to structure fabrication rather than during it. This separation makes possible a simple, low-cost, automated, self- contained, and internally-clean "desktop factory" that can be installed almost anywhere to fabricate 3D structures, leaving any required clean room processes, such as photolithography to be performed by service bureaus or the like.

An example of the electrochemical fabrication process discussed above is illustrated in Figures 2(a) - 2(f). These figures show that the process involves deposition of a first material 2 which is a sacrificial material and a second material 4 which is a structural material. The CC mask 8, in this example, includes a patterned conformable material (e.g. an elastomeric dielectric material) 10 and a support 12 which is made from deposition material 2. The conformal portion of the CC mask is pressed against substrate 6 with a plating solution 14 located within the openings 16 in the conformable material 10. An electric current, from power supply 18, is then passed through the plating solution 14 via (a) support 12 which doubles as an anode and (b) substrate 6 which doubles as a cathode. Figure 2(a), illustrates that the passing of current causes material 2 within the plating solution and material 2 from the anode 12 to be selectively transferred to and plated on the cathode 6. After electroplating the first deposition material 2 onto the substrate 6 using CC mask 8, the CC mask 8 is removed as shown in Figure 2(b). Figure 2(c) depicts the second deposition material 4 as having been blanket-deposited (i.e. non-selectively deposited) over the previously deposited first deposition material 2 as well as over the other portions of the substrate 6. The blanket deposition occurs by electroplating from an anode (not shown), composed of the second material, through an appropriate plating solution (not shown), and to the cathode/substrate 6. The entire two-material layer is then planarized to achieve precise thickness and flatness as shown in Figure 2(d). After repetition of this process for all layers, the multi-layer structure 20 formed of the second material 4 (i.e. structural material) is embedded in first material 2 (i.e. sacrificial material) as shown in Figure 2(e). The embedded structure is etched to yield the desired device, i.e. structure 20, as shown in Figure 2(f).

Various components of an exemplary manual electrochemical fabrication system 32 are shown in Figures 3(a) - 3(c). The system 32 consists of several subsystems 34, 36, 38, and 40. The substrate holding subsystem 34 is depicted in the upper portions of each of Figures 3(a) to 3(c) and includes several components: (1) a carrier 48, (2) a metal substrate 6 onto which the layers are deposited, and (3) a linear slide 42 capable of moving the substrate 6 up and down relative to the carrier 48 in response to drive force from actuator 44. Subsystem 34 also includes an indicator 46 for measuring differences in vertical position of the substrate which may be used in setting or determining layer thicknesses and/or deposition thicknesses. The subsystem 34 further includes feet 68 for carrier 48 which can be precisely mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower portion of Figure 3(a) includes several components: (1) a CC mask 8 that is actually made up of a number of CC masks (i.e. submasks) that share a common support/anode 12, (2) precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 on which the feet 68 of subsystem 34 can mount, and (5) a tank 58 for containing the electrolyte 16. Subsystems 34 and 36 also include appropriate electrical connections (not shown) for connecting to an appropriate power source for driving the CC masking process.

The blanket deposition subsystem 38 is shown in the lower portion of Figure 3(b) and includes several components: (1 ) an anode 62, (2) an electrolyte tank 64 for holding plating solution 66, and (3) frame 74 on which the feet 68 of subsystem 34 may sit. Subsystem 38 also includes appropriate electrical connections (not shown) for connecting the anode to an appropriate power supply for driving the blanket deposition process.

The planarization subsystem 40 is shown in the lower portion of Figure 3(c) and includes a lapping plate 52 and associated motion and control systems (not shown) for planarizing the depositions.

In the last decade or so, there has been interest in creating MEMS devices whose overall height is comparable to or greater than their lateral extents; such structures are called high aspect ratio microstructures, or "HARMS". Two processes have emerged to dominate the manufacture of HARMS. They are LIGA and deep reactive ion etching (DRIE). LIGA is used to form metal structures and via secondary molding operations it may be used to produce polymer and ceramics structures. DRIE is used for etching deep holes into silicon.

The LIGA process is illustrated in Figures 4(a) - 4(f). The process is essentially based on "through-mask plating" using a very thick patterned resist (e.g., 100s of microns to a centimeter or more). The resist is patterned using extremely high energy X-rays (e.g., > 1 GeV) which allows the radiation to penetrate through the thick resist without significant attenuation or scattering. This, combined with a highly-collimated synchrotron beam, makes possible the fabrication of structures with very straight and parallel sidewalls having very smooth surfaces.

In Figure 4(a), a substrate 102 is prepared (e.g., by planarizing, cleaning, and depositing a conductive plating base (not shown). In Figure 4(b), a thick layer of polymer 104 serving as an X-ray resist is bonded to the plating base. This resist is typically PMMA, i.e. poly(methylmethacrylate). As shown in Figure 4(c), the resist 104 is exposed to energetic X-rays 106 through a specially-fabricated patterned mask 108 that may for example include gold patterning 112 on a silicon or graphite base 1 14. The exposure renders certain areas of the resist soluble in a developing chemical. Figure 4(d) shows the patterned resist after development yielding mask 116, which has openings that extend to the plating base on the substrate 102. Next a through-mask selective electroplating operation occurs. Figure 4(e) shows the substrate 102 with mask 116 immersed in a deposition bath 1 18 held in a deposition tank 120, an anode 122; electrical connections 124 and 126 connecting the anode and substrate to a power supply 128. When current is applied, a metal 132' (or other electrodepositable material) is deposited onto the exposed plating base of substrate 102. If a low-stress formulation and deposition parameters are employed, the deposition can be continued to yield a thick deposit of metal (or other material) 132 as shown in Figure 4(f). Then, as is shown in Figure 4(g), the mask 116 can be removed (usually chemically) to yield the released deposited structure 132. If desired, this microstructure can then be used for molding other materials such as polymers or ceramics, for example, using injection molding or embossing techniques, for mass production.

Materials typically electrodeposited in LIGA are pure metals such as Ni, Cu, and Au, or metal alloys such as Ni-Fe (e.g., Permalloy). The latter is challenging due to limited mass transfer in the high aspect ratio mask. Also composite materials such as Ni and SiC can be deposited. Because of the high cost of LIGA and an associated shortage of infrastructure, efforts have been made recently to develop alternative methods of fabricating through- mask electrodeposition masks with reasonably high aspect ratios (though much lower than those attainable with LIGA). One such effort is "UV-LIGA", in which a UV-curable resist is used (e.g., the negative-working photoresist called SU-8 from an epoxy based photopolymer that has been available commercially for several years). Though SU-8 can achieve reasonably vertical sidewalls and thicknesses up to several hundred microns, it is extremely difficult to remove after the electrodeposition process is completed.

Another method that has been explored is sometimes known as Laser LIGA: it involves the use of a laser (typically a UV excimer laser) to machine cavities in a polymer to form a mask. This technique can create masks up to several tens of microns thick, but the sidewalls tend to be tapered (i.e., not parallel) and somewhat rough.

A need exists for a more cost effective HARMS technology. A need exists for a HARMS technology that is compatible with the formation of HARMS devices on substrates containing microelectronic devices (e.g., a CMOS wafer). A need exists for a HARMS technology that results in structures having more uniform properties throughout their heights. This is particularly true when deposition of alloying materials is to occur (inhibition of ionic transport into deep through-masks can vary by ionic specifies and by depth level in the mask). A need exists for a HARMS technology that allows formation of more complex structures.

Summary of the Invention

It is an object of various aspects of the present invention, or of variations thereof, to provide a more cost effective HARMS-type technology. It is an object of various aspects of the present invention, or of variations thereof, to provide a HARMS-type technology that is compatible with the formation of HARMS devices on substrates containing microelectronic devices.

It is an object of various aspects of the present invention, or of variations thereof, to provide a HARMS-type technology that results in structures having more uniform properties throughout their heights.

It is an object of various aspects of the present invention, or of variations thereof, to provide a HARMS-type technology that allows formation of more complex structures.

It is an object of various aspects of the present invention, or of variations thereof, to provide enhanced electrochemical fabrication techniques that can be used to supplement the formation capabilities associated with CC mask plating.

It is an object of various aspects of the present invention, or of variations thereof, to provide enhanced electrochemical formation capabilities

It is an object of various aspects of the present invention, or of variations thereof, to expand the range of materials that can be used in HARMS-type applications.

Other objects and advantages of various aspects of the invention will be apparent to those of skill in the art upon review of the teachings herein. The various aspects of the invention, set forth explicitly herein or otherwise ascertained from the teaching herein, may address any one of the above objects alone or in combination, or alternatively may address some other object of the invention ascertained from the teachings herein. It is not intended that all of these objects be addressed by any single aspect of the invention even though that may be the case with regard to some aspects.

In a first aspect of the invention, a method of producing a three-dimensional structure includes providing an anode; providing a substrate that functions as a cathode; providing an electrolyte between the anode and the cathode; providing a current source controllably connected to the anode and cathode; providing a dielectric mask that includes an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; pressing the face surface of the mask against the substrate; after pressing, activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition includes deposition sidewalls; and after said activating, relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase.

In a second aspect of the invention, a method of producing a three-dimensional structure includes providing a substrate on which deposition of a material can occur; providing a mask having a pattern that includes a masking material and at least one opening therein, wherein the masking material surrounding the opening forms mask sidewalls; selectively depositing material onto the substrate while the mask is mated thereto either via a face of the mask or the mask sidewalls and thereafter relatively separating the mask from the substrate while maintaining contact between the mask sidewalls and the deposited material and continuing the deposition of material so that a height of deposition increases beyond what it was prior to beginning the separation of the mask and the substrate.

In a third aspect of the invention, an apparatus for producing a three-dimensional structure includes an electrode that can be electrically biased to function as an erodable anode; a substrate on which a deposition material may be deposited and which can be electrically biased as a cathode; a container for holding an electrolyte that can form a conductive path between the electrode and the substrate; a current source controllably connected to the electrode and the substrate; a dielectric mask that that includes an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; means for mating the face surface of the mask against the substrate; means for activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition includes deposition sidewalls; and means for relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase. In a fourth aspect of the invention, an apparatus for producing a three- dimensional structure includes an electrode that can be electrically biased to function as an erodable anode; a substrate on which a deposition material may be deposited and which can be electrically biased as a cathode; a container for holding an electrolyte that can form a conductive path between the electrode and the substrate; a current source controllably connected to the electrode and the substrate; a dielectric mask that includes an at least partially conformable material, the mask having^" at^' least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; at least one controllable stage for positioning the face surface of the mask against the substrate and for moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls; a controller for (1) activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition includes deposition sidewalls; (2) causing the substrate and the face surface of the mask to contact and then, after a desired amount of deposition, to separate the deposit from the face surface of the mask; and (3) continuing application of the current after incremental pulling away, during continuous relative pulling away of the substrate from the mask, or during movement that causes separation so as to allow a height of the deposition to increase.

In a fifth aspect of the invention, a method of producing a three-dimensional structure, includes: providing a substrate from which a pattern protrudes, where the pattern has pattern sidewalls and the substrate has a face surface that is approximately perpendicular to the sidewalls; providing a mask, having a pattern, that includes a masking material and at least one opening therein, wherein the masking material has a face surface that is substantially parallel to the face of the substrate and wherein the masking material surrounding the opening forms mask sidewalls; and mating the mask sidewalls with the pattern sidewalls without mating the face surface of the masking material with the face surface of the substrate and depositing material through the opening onto the substrate.

In a sixth aspect of the invention a method of producing a three-dimensional structure, includes: providing an anode; providing a substrate that functions as a cathode, where the substrate includes a face surface and may include a protrusion having sidewalls that extends from the face surface; providing an electrolyte between the anode and the cathode; providing a current source controllably connected to the anode and cathode; providing a dielectric mask that includes an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; mating the face surface of the mask against the face surface of the substrate, or mating the mask sidewalls to the sidewalls of trie prdtrϋsϊoή^'fafteT rn^'ati^'ήg, activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern that is at least partially dictated by the pattern of the mask, wherein the deposition includes deposition sidewalls; and after said activating, relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from at least one of the protrusion sidewalls or the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase.

Further aspects of the invention will be understood by those of skill in the art upon reviewing the teachings herein. Other aspects of the invention may involve combinations of the above noted aspects of the invention. Other aspects of the invention may involve apparatus that can be used in implementing one or more of the above method aspects of the invention. These other aspects of the invention may provide various combinations of the aspects presented above as well as provide other configurations, structures, functional relationships, and processes that have not been specifically set forth above.

Brief Description of the Drawings

Figures 1 (a) - 1 (c) schematically depict a side view of various stages of a CC mask plating process, while Figures 1 (d) - (g) depict a side view of various stages of CC mask plating process using a different type of CC mask.

Figures 2(a) - 2(f) schematically depict side views of various stages of an electrochemical fabrication process as applied to the formation of a particular structure where a sacrificial material is selectively deposited while a structural material is blanket deposited.

Figures 3(a) - 3(c) schematically depict side views of various example subassemblies that may be used in manually implementing the electrochemical fabrication method depicted in Figures 2(a) - 2(f).

Figures 4(a) - 4(g) depict side views of various stages in a LIGA process for forming a HARMS-type structure.

Figures 5(a) - 5(f) depict side views of various stages in a process according to a preferred embodiment of the present invention.

Figure 6 depicts a side view of a structure formed according to a preferred embodiment where the motion between the mask and the substrate included both perpendicular movement and parallel movement such that a desired amount of lateral ^' variation in the deposit occurred.

Figures 7(a) - 7(c) depict side views of various stages in a process according to a preferred embodiment of the present invention while Figure 7(d) depicts an alternate configuration for sealing the mask and reservoir 304.

Figure 8(a) - 8(d) depict side views of various stages of a process for forming a mold that can be used for forming a CC mask.

Figures 9(a) - 9(f) depict side views of various stages of a CC mask formation process using the mold of figures 8(a) - 8(d). Figure 10 depicts a side view of an alternate CC mask configuration that includes a porous support.

Detailed Description of Preferred Embodiments of the Invention

Figures 1 (a) - 1 (g), 2(a) - 2(f), and 3(a) - 3(c) illustrate various aspects of electrochemical fabrication that are known. Other electrochemical fabrication techniques are set forth in the '630 patent referenced above, in the various previously incorporated publications, in patent applications incorporated herein by reference, still others may be derived from combinations of various approaches described in these publications, patents, and applications, or are otherwise known or ascertainable by those of skill in the art. All of these techniques may be combined with those of the present invention to yield enhanced embodiments.

Various embodiments of the invention present techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion (ELEX™) process. Some preferred embodiments perform the extrusion process via depositions through an anodeless conformable contact mask that is initially pressed against a substrate and is then progressively pulled away from the substrate as the deposition thickens. The pattern of deposition may vary over the course of deposition by including relative motion between the mask and the substrate that includes translational or rotational components. More complex structures may be formed by combining the extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of the electrochemical fabrication processes set forth in the U.S. Patent 6,027,630. In other embodiments, there may be no need for an initial face-to- face contact between the mask and the substrate particularly if the extrusion is to be added to an existing deposition where the contact can begin with a mating of sidewalls. In still other embodiments the mask may be placed in proximity to the substrate and an initial deposition can be used to seal the mask and he substrate such that the inϊtiaFga^'p is at least partially filled with a deposition material.

In a first preferred embodiment, the mask is initially pressed against the substrate so that the face of its conformable material (e.g. elastomeric surface) conforms to the substrate as in CC mask plating illustrated in Figures 1 (a) - (1g). This contact positioning of the conformable contract mask prevents any deposition of material in contacted regions. An expandable bellows chamber is provided that surrounds the substrate and prevents the deposition bath from contacting the sides or rear of the substrate as well as the sides of later deposits, and thus prevents deposition in those regions. When the deposit has begun to grow in thickness, the substrate (or mask) is withdrawn at a controlled rate that on average closely matches the deposition rate, such that the progressing "working surface" (i.e. the surface at which the deposition is occurring) remains relatively fixed with respect to the mask. During the movement when the face of the mask no longer contacts the substrate, the sidewalls of the mask remain in intimate contact with the deposit, thus forming a seal which prevents deposition other than in the open areas of the mask. Eventually, a high aspect ratio structure, or at least a structure having a height in excess of that normally allowed by a mask of given dimensions, may be generated which is easily separated from the mask which can then be reused. A first preferred embodiment is illustrated in Figures 5(a) - 5(f). This embodiment uses a relatively thin mask (i.e. much thinner than the masks used in LIGA) that is independent of the substrate, and which is moved relative to the substrate during deposition to extrude a structure.

Figures 5(a) - 5(f) illustrate side views of various stages in the process of this embodiment along with the various components that are used in the embodiment. Figure 5(a) illustrates a mask 102 that includes a support portion 104 (e.g. a rigid or dimensionally stable structure) and a conformable portion 106, an electrode 108 that may function as an anode, a substrate 110, and a bellows 120 and bellows chamber 112 that are located within a deposition tank 114 that can hold an electrolyte 1 16 (shown in Figure 5(b)). The open side of the bellows 120 connects to and seals with a perimeter region of the mask 102. This sealing makes the openings through the mask the only paths between the inside and outside of the bellows. Next, as shown in Figure 5(b), the substrate 1 10 and the mask 102 are pressed against each other and the tank 114 is filled with electrolyte 1 16 in such a manner that the electrolyte does not become located in the region 112 between the substrate and the bellows. As shown in Figure 5(c) a potential is applied between the anode 108 and tne suostrate 1 l ϋ (which acts as a cathode) via power source 122 and wires 124 and 126. The potential is supplied with a polarity and current that allows a deposition 138 to begin forming on the substrate at an appropriate rate. The primary source of the deposition material is preferably the anode 108 with potentially some deposition material being supplied directly by the electrolyte.

After the deposition thickens to a desired height, the substrate and the mask begin to separate at a desired rate. The average rate of separation is preferably approximately equal to the average rate of deposition such that a deposition zone and a location on the mask surface stay in the same approximate position throughout the deposition operation with the exception of the initial portion of the deposition that occurs before movement begins. During separation, the sidewalls 132 of the mask seal with the sidewalls 134 of the growing deposit 138 such that the electrolyte does not enter the bellows chamber 112. In one embodiment the deposition rate and the movement occur in such a manner that the position of the deposition stays at a position 140 relative to the face surface 136 of the mask resulting in a separation of "L". In other embodiments though the average deposition rate and the separation rate are approximately equal, actual separation may occur in discrete and discontinuous steps while the deposition may occur in a continuous manner, or in a discontinuous manner. Deposition and movement may occur in an alternating manner at different times. In some embodiments the working surface may extend into the support region of the mask.

Figure 5(d) depicts the state of deposition after the deposit thickness has grown to several times the thickness of the original mask and even more times the thickness of the conformable material portion 104 of the mask. Figure 5(e) depicts the state of the process after the deposit 138 has grown to become the completed structure142 has been completed to form the completed structure 142. Figure 5(f) depicts the combined substrate 110 and structure 142 after being removed from the apparatus of Figures 5(a) - 5(e) Figure 6 illustrates a side view of a structure 242 formed by electrochemical extrusion of material onto substrate 210 via mask 202. During the formation of the structure 242 not only was there a perpendicular separation of the planes of the mask 202 and substrate 210 surfaces but there was also motion that had a component parallel to the planes of the mask and substrate surfaces. The parallel component of motion may include translational motion or may include rotational motion around an axis that has a component that is perpendicular to a plane of the mask surface (T.^'e^" the face of the conformable material) or of a contact face of the substrate surface.

Figures 7(a) - 7(c) illustrate another preferred embodiment where the bellows of the first embodiment are removed in favor of other structural components that inhibit deposition of material onto the sidewalls of the structure and onto the substrate (other than where initial openings in the mask expose selected portions of the substrate to electrolyte).

Figure 7(a) depicts a base structure 300 on which an electrolyte reservoir 304 sits. A mask 302 sits on a gasket 308 located on a lower lip 306 at the bottom of the electrolyte reservoir 304. Of course, as opposed to just sitting on one another, in some embodiments the mask may be attached to the reservoir in any appropriate manner and similarly the reservoir may be attached to the base. On lip 306 and gasket 308, a support portion 312 of mask 302 sits while a conformable portion 322 of the mask is located on a lower surface of the support portion 312. One or more openings for the desired deposition pattern (in this example three are depicted) extend through both the conformable material and the support portion of the mask. A substrate 324 on which deposition is to occur is located below the mask on stage 332. Stage 332 is shown as having Z-movement capability 334 (i.e. movement capability in a direction substantially perpendicular to the plane of the substrate) but it is to be understood that for alignment purposes prior to beginning deposition or for varying the deposition pattern in the a plane parallel to the plane of the substrate, stage 332 could offer X and/or Y motion capability or rotational motion capability. Figure 7(a) further shows that the apparatus includes an anode 334 that is located in electrolyte reservoir 304, electrical connections 336, 338, and 340 that connect the anode 334, the substrate 324, and the stage 332 to controller 344. During operation, the controller supplies appropriate power to the anode and the substrate such that deposition onto the substrate occurs at a desirable rate and such that the motion of the substrate 324 relative to the mask 302 is appropriately controlled.

As shown in Figure 7(b) the conformable portion 322 of the mask 302 contacts the substrate 324, the electrolyte reservoir 304 is filled with electrolyte 342 such that anode 334 and substrate 324 are connected by a conductive path. Deposition begins formation of structure 352 prior to initiating any movement of the substrate 324. In Figure 7(c), a further stage of the process is shown where a deposition of significant height has been formed. In some alternative embodiments the process may not begin with a face-to-face mating of the substrate and the mask (where the faces are considered to be the surfaces of the mask and the substrate that are substantially perpendicular to a direction of the height of the deposition). Instead the process may begin with a mating between the sidewalls of the mask and sidewalls of a protrusion that extends from the face of the substrate. Such an alternative process may be considered an add-on process, as the depositions that occur simply add to an existing structure. The initial protrusion may originate in many ways. For example, it may be from a molding operation, a previous extrusion operation, or a non-extrusion based conformable contact mask plating operation.

It is believed that these alternatives can be understood with reference to Figures 5(e), 6, or 7(c) where the state of deposition in each may be considered a protrusion that extends from the substrate and onto which one or more further depositions will occur. As such these figures may be considered to be the starting point of the process. These starting points are achieved by mating the protrusion to the mask either in the presence of an electrolyte or subsequently surrounding the mated combination with electrolyte. After mating and electrolyte immersion, follow-on deposition occurs. The follow-on deposition is preferably accompanied by relative movement between the mask and the substrate. However, in some embodiments the follow-on deposition may not be accompanied by such movement as the act of performing the deposition on an existing protrusion may be considered as a type of extrusion. In some embodiments, depositions may occur multiple times between mating and unmating operations where unmating and mating operations always occur between relative movements of the mask and the substrate. The controller 344 may take various forms. For example it may be a computer programmed to control deposition time, current level for the electrodeposition operations, start time for initiating relative movement between the substrate and the mask, or the rate of such movement or the amount and timing of discrete movements, and the like. In less automated embodiments the controller may be two or more discrete devices and independent devices. For example, it may include a separate power supply for the deposition operation and a separate power supply and/or controller for the stage. The deposition power supply may include an adjustment for setting current to a desired value (e.g. based on a desired current density). The movement of the stage may be controlled to begin after a predetermined deposition time, after a predetermined amount of charge as flowed or been transferred through the deposition system, or after a determined or estimated deposition height has been achieved. In some tests performed, it was found that a deposition thickness of about 20 microns before allowing the extrusion motion to begin resulted in reasonable sealing between the mask and the deposit during movement (i.e. no extraneous deposits or at least no excessive extraneous deposits were observed). Tests with a 10 micron thick deposition prior to initiating extrusion motion produced unsatisfactory results in those specific experiments. It is possible that in a given situation, thinner depositions prior to beginning extrusion motion could yield satisfactory results. It is within the level of skill in the art to determine a required minimum or at least a workable deposition thickness in a given situation.

Deposition may be terminated after a predetermined deposition time (a time estimated to produce the desired deposition height or a minimum deposition height to which the total deposition can be planed), after a predetermined amount of charge has flowed or been transferred through the deposition system, or after a determined or estimated deposition height has been achieved. In some alternative embodiments, deposition height may be periodically checked to ensure that movement and deposition are progressing as anticipated, corrective action may be taken as needed, and/or build parameters may be updated based on devised performance data. In some embodiments, the current may be set based on a desired current density and a known or estimated surface area for the deposition.

In some alternative embodiments, the movement between the mask and the substrate will be controlled in a manner that inhibits the deposition material from reaching a height within the mask that allows the deposited material to contact the support material. In other embodiments the deposition material will be allowed to contact the sidewalls of the support material

The movement of stage 332 may be manually controlled, semi-automatically controlled, or automatically controlled (e.g. by a programmable device).

In some alternative embodiments, sealing between the mask and the reservoir may occur via the conformable material that forms part of the mask. For example, the conformable material may have an outer diameter that mates with the opening through the bottom of the reservoir 304 (e.g. the inside dimension of lip 306) or it may extend complete across the support structure such that an outer ring of conformable material rest on the lip of the reservoir thereby potentially obviating the need for the gasket 308. This final alternative is shown in Figure 7(d). In the most preferred embodiments the anode includes an erodable material that supplies the deposition material but in other embodiments the deposition material may be provided by other means (e.g. solely by the solution) in which case the anode may not need to be erodable. In the most preferred embodiments the mask is of the anodeless type while in other embodiments the anode may form part of the mask. In some anodeless type embodiments, the openings through the support material may be identical in size and configuration to the opening holes through the support portion while in other embodiments the opening sizes in the conformable material may be larger or smaller than the openings through the support material.

In still other embodiments, the support material may include a porous material and openings through the support portion may be paths through the pores. An example of a mask 500 with a porous support is shown in Figure 10. A conformable portion 504 (e.g. PDMS) of the mask 500 is patterned and attached to a relatively thin solid support structure 502 (e.g. a thin silicon wafer) that is in turn bonded to a porous structure 506 (e.g. a glass frit). In the most preferred embodiments each of these three components would be dielectrics but in other embodiments the solid support and the porous structure can be conductive. It is believed that a p-type silicon material may be particularly advantageous as the solid support structure as it is believed to resist acceptance of deposits of material if the deposition height and relative motion of the mask and substrate allow the deposit to contact the solid support 502.

In some preferred embodiments the substrate material will be the same as the deposition material while in other embodiments the materials may be different. For example, the deposition material may be copper, nickel, gold, silver, an alloy, or the like, while the substrate material may be any of these materials or some other material and even a material that isn't readily depositable. As a further example, the substrate may be composed of pure nickel (99.98%) while the deposition material may come from an electrode (i.e. anode) of pure OFHC copper (99.95%). In some embodiments where copper is the deposition material, the electrolyte may be a copper plating bath, such as a copper sulfate acid bath (e.g. Techni Copper U or Techni Copper FB from Technic Inc. of Cranston, Rhode Island) or a copper pyrophosphate bath (e.g. Unichrome from Atotech USA Inc. of Somerset, New Jersey).

The embodiment of Figure 5 illustrated a sideways extrusion of the material while the embodiment of Figure 7 illustrated a vertical extrusion of material where newly deposited material is added on top of previously deposited material. In still other embodiments the mask and substrate may take on other orientations, for example the substrate may be located above the mask. If the substrate is located above the mask any bubbles resulting from the deposition process may tend to get stuck within the mask against the substrate or previously deposited material and a method to remove such bubbles may be desirable (e.g. flowing of electrolyte, agitation of electrolyte, periodic separation with or without associated agitation or flow, and the like).

In some embodiments, the structures may take on more complex forms. For example, the deposition material may be changed so that a portion of the extruded structure is formed from one material while another extruded portion is formed from a different material. A first portion of the extruded structure may be formed with one mask pattern while another extruded portion may be formed with a different mask pattern. In still other embodiments one or more breaks in deposition may occur, followed by one or more planarization operations. In other embodiments one or more extrusion operations may be performed in combination with one or more non-extrusion type deposition operations (e.g. depositions operations that do not include relative movement between a mask and the substrate).

In some embodiments, a second material may be deposited either selectively or by blanket deposition. In some embodiments, single or multiple materials may be planarized (e.g. by lapping, grinding, chemical mechanical polishing, and the like) as a basis for further deposition operations either of the extrusion type or of the non- extrusion type. In some embodiments multiple deposition operations may not occur in a repeated registration with each other but may occur in a desired shifted or rotated registration with respect to each other. In some multiple material embodiments, the material deposited by extrusion may be a sacrificial material while in other embodiments it may be a structural material. In some embodiments selective and/or non-selective depositions may be performed by electroplating, electrophoretic deposition, CVD, PVD, and/or any other technique capable of locating a material in a desired pattern on a substrate.

In some embodiments, for example to allow clearing of bubbles or to allow refreshing of electrolyte, the deposition current may be shut off one or more times, the mask and deposition may be separated, the mask and the deposition realigned and contacted, and then the current reactivated. In some embodiments this shutting off, separating, re-contacting, and re-depositing may be accompanied by an intermediate planarization operation (e.g. lapping) so as to allow reestablishment of planarity of the deposit prior to continuing with further deposition. In still other embodiments, fresh electrolyte may be made to flow between the anode and the back side (i.e. the support side) of the mask and/or some agitation of the electrolyte may occur to help ensure maintenance of electrolyte properties. In embodiments where electrolyte is refreshed, replenished, or agitated, control of any pump or agitation actuator may occur via the same controller that handles deposition and separation.

In some embodiments, the mask may only include the conformable portion of the mask. The conformable portion of the mask preferably has sufficient conformability to allow easy separation of the mask and the deposit and to inhibit excessive amounts of electrolyte leakage between both the mask and the substrate and the mask and the deposit. In some embodiments, it may be found that sufficient conformability for such purposes is achieved without resorting to the need for a more rigid support structure.

The conformable contact masks of various embodiments may be formed in many different ways. The conformable material for some masks may be an elastomeric material, such as a rubber material, a urethane, or the like. A rubber material may be a silicone rubber, such as polydimethylsiloxane (PDMS). The supporting substrate may be a metal, silicon wafer, a relatively hard plastic or the like.

Some masks may be formed in a three step process that includes: (1 ) Design and fabrication of a photomask, (2) fabrication of a mold, and (3) fabrication of the mask. As some masks have feature sizes on the order of tens to hundreds of microns, the molds that may be used in patterning them may be considered micromolds.

Micromold fabrication may employ photolithography of a photoresist (such as is used in IC fabrication), to realize features on the microscale. One such photoresist is SU-8 (from Microchem Inc. of Newton, Massachusetts). SU-8 is a negative photoresist. It has good mechanical properties, can be adhered to silicon, and can be coated (e.g. from 1 μm to more than 500 μm) in a single operation to a desired thickness (e.g. 25 μm to 100 μm). Silicon wafers offer excellent flatness and smoothness which can be transferred to the contact surface of a conformable material that is patterned by an SU- 8/silicon micromold.

A process that can be used to fabricate an SU-8/silicon micromold is illustrated in Figures 8(a) - 8(d). Figure 8(a) depicts a side view of a silicon wafer 402. Figure 8(b) shows that a coating of photoresist 406 (e.g. SU-8) of desired thickness is applied to the surface of the wafer 402. Figure 8(c) illustrates the use of a photomask 412 in combination with a source (not shown) of UV radiation 416 can be used to selective expose 418 the coating of photoresist 406. Figure 8(d) depicts mold 424 that results from the development of the photoresist 406 that was patterned via of the exposure of Figure 8(c). In Figure 8(d) a region of photoresist 426 (the portion of the resist that was exposed) remains on the silicon wafer 402.

A process for using a mold, such as that shown in Figures 8(d) to form a silicon/silicone mask, is depicted in Figures 9(a) - 9(f). The process includes the following: (0) Start with a mold 424 as shown in Figure 9(a) which includes base 402 and patterned photoresist 426, (1) Pour liquid PDMS 452 over photoresist pattern 426 of the mold 424 as shown in Figure 9(b) , (2) degas the PDMS to remove air bubbles, (3) place an Si wafer 454 onto the PDMS 452, pressing it down as indicated by arrows 454 as shown in Figure 9(c) and holding it in position (e.g. with a molding fixture), and putting the fixture in an oven at an elevated temperature (e.g. 65 °C) for a period of time sufficient to cure the PDMS (e.g. for about 6 hours) to form a pattern 456 of cured PDMS, (4) de-mold the partially formed mask 458 from the mold as shown in Figure 9(d). The partially formed mask may include a silicone residue 464 on the silicon 452 that is exposed in the opening 462 in the silicone, (5) use an etching operation (e.g. RIE) to remove any silicone residue from the silicon surface in the opening to yield a partially formed mask 458 with an opening that is free of silicone as shown in Figure 9(e), and (6) use deep reactive ion etching (DRIE) to etch through the silicon wafer as shown in Figure 9(f) to yield a completed anodeless mask 472. Prior to performing the coating operation of step (2) above, the surface of the photoresist and silicon wafer of the mold may be treated with a release agent that may aid in the de-molding process of step (4). Experiments have produced masks by this process where the resulting conformable material thickness is about 25 μm with a silicon thickness of about 300 μm.

In some embodiments, the silicon thickness could be reduced so as to reduce the required time to etch through it. For example, SOI wafers could be used. In other embodiments, a sacrificial film may be used to protect the conformable material (e.g. PDMS) during DRIE operations.

The patent applications in the following table are hereby incorporated by reference herein as if set forth in full. The gist of each patent application is included in the table to aid the reader in finding specific types of teachings. It is not intended that the incorporation of subject matter be limited to those topics specifically indicated, but instead the incorporation is to include all subject matter found in these applications. The teachings in these incorporated applications can be combined with the teachings of the instant application in many ways. For example, the various apparatus configurations disclosed in these referenced applications may be used in conjunction with the novel features of the instant invention to provide various alternative apparatus that include the functionality disclosed herein:

Various other embodiments of the present invention exist Some of these embodiments may be based on a combination of the teachings herein with various teachings incorporated herein by reference. Some embodiments may not use any blanket deposition process and/or they may not use a planarization process Some embodiments may involve the selective deposition of a plurality of different materials on a single layer or on different layers. Some embodiments may use blanket depositions processes that are not electrodeposition processes. Some embodiments may use selective deposition processes on some layers that are not conformable contact masking processes and are not even electrodeposition processes. Some embodiments may use nickel as a structural material while other embodiments may use different materials such as gold, silver, or any other electrodepositable materials that can be separated from copper and/or some other sacrificial material. Some embodiments may use copper as the structural material with or without a sacrificial material. Some embodiments may remove a sacrificial material while other embodiments may not. In some embodiments the anode may be different from the conformable contact mask support and the support may be a porous structure or other perforated structure. Some embodiments may use multiple conformable contact masks with different patterns so as to deposit different selective patterns of material on different layers and/or on different portions of a single layer.

In view of the teachings herein, many further embodiments, alternatives in design and uses of the instant invention will be apparent to those of skill in the art. As such, it is not intended that the invention be limited to the particular illustrative embodiments, alternatives, and uses described above but instead that it be solely limited by the claims presented hereafter.

Claims

I Claim:

1. A method of producing a three-dimensional structure, comprising: providing an anode; providing a substrate that functions as a cathode; providing an electrolyte between the anode and the cathode; providing a current source controllably connected to the anode and cathode; providing a dielectric mask that comprises an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; pressing the face surface of the mask against the substrate; after pressing, activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition comprises deposition sidewalls; and after said activating, relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase.

2. The method of claim 1 wherein the moving continues during continued deposition of material at a rate that maintains contact between the deposition sidewalls and the sidewalls of the mask and for a time period that allows a full height of deposition to be reached.

3. The method of claim 1 wherein the moving continues during deposition of material or periodically between a plurality of successive depositions such that contact between the deposition sidewalls and the sidewalls of the mask is maintained and such that a full height of deposition is reached.

4. The method of claim 1 wherein the moving occurs after allowing deposition to occur for a selected time, allowing deposition to reach a selected minimum height, or allowing a desired charge transfer to occur.

5. The method of claim 4 wherein the moving occurs at a substantially continuous rate.

6. The method of claim 5 wherein the moving is correlated to an estimated or known rate of deposition.

7. The method of claim 4 wherein the moving occurs via discrete increments separated by one or more periods of waiting.

8. The method of claim 1 wherein the substrate comprises a material that is different from the deposition material.

9 The method of claim 1 wherein the current density is set as a function of known or estimated surface area of the at least one opening in the mask.

10. The method of claim 1 wherein the mask is comprises a conformable material and a support material with the at least one opening extending through each and with each having sidewalls.

11. The method of claim 1 wherein the mask is formed from a conformable material and a support material with the at least one opening extending through each and with each having sidewalls, and wherein during deposition the relative positions of the deposition pattern and of the sidewalls allows the deposition to contact with sidewalls of the support material.

12. The method of claim 1 wherein the mask is formed from a conformable material and a support material with the at least one opening extending through each and with each having sidewalls, and wherein during deposition the relative positions of the deposition pattern and of the sidewalls inhibits the deposition from coming into contact with sidewalls of the support material

13. The method of claim 10 wherein the support material comprises a porous material

14. The method of claim 1 wherein a first mask is used in forming a first height of a first deposition material in a first pattern and a second mask is used to form a second height of a second deposition material in a second pattern adhered to and in registration with the first pattern.

15. The method of claim 14 wherein the first deposition pattern is different from the second deposition pattern.

16. The method of claim 14 wherein the first deposition pattern is substantially identical to the second deposition pattern.

17. The method of claim 14 wherein the first deposition material comprises a material that is different from the second deposition material.

18. The method of claim 14 wherein the second deposition material comprises a material that is different from the first deposition material.

19. The method of claim 14 wherein the first deposition material is substantially identical to the second material.

20. The method of claim 1 wherein deposition occurs with a first deposition material followed by deposition with a second deposition material that adheres to the first deposition material.

21. The method of claim 1 wherein lapping is used to establish co-planarity of a surface of the substrate with a surface of the mask.

22. The method of claim 14 wherein current is periodically shut off and the mask and the deposition are separated and lapping is performed to reestablish planarity of the deposit and then the mask and substrate are aligned and contacted and the current is reactivated.

23. The method of claim 1 wherein relative movement between the mask and the substrate comprises movement having a component that is parallel to a plane of the face surface of the mask.

24. The method of claim 23 wherein movement having a component that is parallel to a plane of the face surface of the mask comprises a translational movement.

25. The method of claim 23 wherein movement having a component that is parallel to a plane of the face surface of the mask comprises rotational movement around an axis that has a component that is perpendicular to a plane of the face surface of the mask.

26. The method of claim 1 wherein the mask comprises the anode.

27. The method of claim 1 wherein the anode and the mask are separated from each by electrolyte.

28. The method of claim 1 wherein current is shut off at least once and the mask and deposition are then separated, the mask and the deposition are aligned and contacted and the current is reactivated.

29. The method of claim 1 wherein the material is a first material, additionally comprising: deactivating the current source; separating the mask and the deposited first material; depositing a second material to at least a portion of any regions that did not receive a deposition of the first material; planarizing the first and second materials such that a common surface level is formed; and depositing a third material onto at least a portion of the common surface wherein the third material may be identical to one of the first or second materials or wherein the third material may be different from both the first and second materials.

30. The method of claim 1 wherein the height of the deposition pattern exceeds a height of the conformable material from which the deposition was formed.

31. The method of claim 30 wherein the height of the deposition pattern exceeds a combined height of the conformable material and the support material.

32. The method of claim 1 wherein a desired structure comprises at least a portion of the deposition material.

33. The method of claim 1 wherein at least a second material is deposited in a region proximate to the deposition material and a desired structure comprises at least the second material and at least a majority of the deposition material is a sacrificial material that is removed prior to putting the desired structure to use.

34. A method of producing a three-dimensional structure, comprising: providing a substrate on which deposition of a material can occur; providing a mask, having a pattern, comprised of a masking material and at least one opening therein, wherein the masking material surrounding the opening forms mask sidewalls; selectively depositing material onto the substrate while the mask is mated thereto either via a face of the mask or the mask sidewalls and thereafter relatively separating the mask from the substrate while maintaining contact between the mask sidewalls and the deposited material and continuing the deposition of material so that a height of deposition increases beyond what it was prior to beginning the separation of the mask and the substrate.

35. An apparatus for producing a three-dimensional structure, comprising: an electrode that can be electrically biased to function as an erodable anode; a substrate on which a deposition material may be deposited and which can be electrically biased as a cathode; a container for holding an electrolyte that can form a conductive path between the electrode and the substrate; a current source controllably connected to the electrode and the substrate; a dielectric mask that comprises an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; means for mating the face surface of the mask against the substrate; means for activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition comprises deposition sidewalls; and means for relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase.

36. The apparatus of claim 35 wherein the means for activating comprises a programmed computer.

37. An apparatus for producing a three-dimensional structure, comprising: an electrode that can be electrically biased to function as an erodable anode; a substrate on which a deposition material may be deposited and which can be electrically biased as a cathode; a container for holding an electrolyte that can form a conductive path between the electrode and the substrate; a current source controllably connected to the electrode and the substrate; a dielectric mask that comprises an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; at least one controllable stage for positioning the face surface of the mask against the substrate and for moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from the deposition sidewalls; a controller for

(1 ) activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern at least partially dictated by the pattern of the mask, wherein the deposition comprises deposition sidewalls;

(2) causing the substrate and the face surface of the mask to contact and then, after a desired amount of deposition, to separate the deposit from the face surface of the mask; and (3) continuing application of the current after incremental pulling away, during continuous relative pulling away of the substrate from the mask, or during movement that causes separation so as to allow a height of the deposition to increase.

38. The apparatus of claim 37 wherein the controller comprises a programmed computer.

39. A method of producing a three-dimensional structure, comprising: providing a substrate from which a pattern protrudes, where the pattern has pattern sidewalls and the substrate has a face surface that is approximately perpendicular to the sidewalls; providing a mask, having a pattern, comprised of a masking material and at least one opening therein, wherein the masking material has a face surface that is substantially parallel to the face of the substrate and wherein the masking material surrounding the opening forms mask sidewalls; and mating the mask sidewalls with the pattern sidewalls without mating the face surface of the masking material with the face surface of the substrate and depositing material through the opening onto the substrate.

40. The method of claim 39 wherein the deposition of material through the opening is accompanied by simultaneous increasing or non-simultaneous, intermittent increasing of a separation of the face surface of the mask from the face surface of the substrate.

41. A method of producing a three-dimensional structure, comprising: providing an anode; providing a substrate that functions as a cathode, where the substrate comprises a face surface and may comprise a protrusion having sidewalls that extends from the face surface; providing an electrolyte between the anode and the cathode; providing a current source controllably connected to the anode and cathode; providing a dielectric mask that comprises an at least partially conformable material, the mask having at least one opening extending through the conformable material wherein the opening is defined by mask sidewalls and wherein the opening defines a mask pattern, the conformable portion of the mask also having a face surface; mating the face surface of the mask against the face surface of the substrate, or mating the mask sidewalls to the sidewalls of the protrusion; after mating, activating the current source to cause deposition of a deposition material onto the substrate in a deposition pattern that is at least partially dictated by the pattern of the mask, wherein the deposition comprises deposition sidewalls; and after said activating, relatively moving the face surface of the mask away from the substrate by a distance that is less than a distance that would cause separation of the mask sidewalls from at least one of the protrusion sidewalls or the deposition sidewalls, and continuing application of the current so as to allow a height of the deposition to increase.