WO2003073507A3 - Image sensor with photosensitive thin film transistors - Google Patents

Image sensor with photosensitive thin film transistors Download PDF

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Publication number
WO2003073507A3
WO2003073507A3 PCT/US2003/003277 US0303277W WO03073507A3 WO 2003073507 A3 WO2003073507 A3 WO 2003073507A3 US 0303277 W US0303277 W US 0303277W WO 03073507 A3 WO03073507 A3 WO 03073507A3
Authority
WO
WIPO (PCT)
Prior art keywords
image sensor
photocurrent
thin film
film transistors
photo
Prior art date
Application number
PCT/US2003/003277
Other languages
French (fr)
Other versions
WO2003073507A2 (en
Inventor
Boer Willem Den
Original Assignee
Planar Systems Inc
Boer Willem Den
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/217,798 external-priority patent/US7408598B2/en
Application filed by Planar Systems Inc, Boer Willem Den filed Critical Planar Systems Inc
Priority to AU2003208975A priority Critical patent/AU2003208975A1/en
Publication of WO2003073507A2 publication Critical patent/WO2003073507A2/en
Publication of WO2003073507A3 publication Critical patent/WO2003073507A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Abstract

An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes shorted to source electrodes to increase generated photocurrent. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. Data lines indicate location of the received image on the image sensor array.
PCT/US2003/003277 2002-02-20 2003-02-04 Image sensor with photosensitive thin film transistors WO2003073507A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003208975A AU2003208975A1 (en) 2002-02-20 2003-02-04 Image sensor with photosensitive thin film transistors

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US35926302P 2002-02-20 2002-02-20
US60/359,263 2002-02-20
US10/217,798 US7408598B2 (en) 2002-02-20 2002-08-12 Light sensitive display with selected interval of light sensitive elements
US10/217,798 2002-08-12
US10/307,106 2002-11-27
US10/307,106 US6995743B2 (en) 2002-02-20 2002-11-27 Light sensitive display
US10/347,149 US7023503B2 (en) 2002-02-20 2003-01-17 Image sensor with photosensitive thin film transistors
US10/347,149 2003-01-17

Publications (2)

Publication Number Publication Date
WO2003073507A2 WO2003073507A2 (en) 2003-09-04
WO2003073507A3 true WO2003073507A3 (en) 2004-04-08

Family

ID=27767916

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/003277 WO2003073507A2 (en) 2002-02-20 2003-02-04 Image sensor with photosensitive thin film transistors

Country Status (3)

Country Link
US (2) US7023503B2 (en)
AU (1) AU2003208975A1 (en)
WO (1) WO2003073507A2 (en)

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US6831710B2 (en) 2004-12-14
AU2003208975A8 (en) 2003-09-09
AU2003208975A1 (en) 2003-09-09
WO2003073507A2 (en) 2003-09-04
US20030218116A1 (en) 2003-11-27
US7023503B2 (en) 2006-04-04
US20030205662A1 (en) 2003-11-06

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