WO2003077414A3 - Leistungsverstärker - Google Patents

Leistungsverstärker Download PDF

Info

Publication number
WO2003077414A3
WO2003077414A3 PCT/EP2003/002533 EP0302533W WO03077414A3 WO 2003077414 A3 WO2003077414 A3 WO 2003077414A3 EP 0302533 W EP0302533 W EP 0302533W WO 03077414 A3 WO03077414 A3 WO 03077414A3
Authority
WO
WIPO (PCT)
Prior art keywords
matching
relates
power amplifier
matching network
power mosfets
Prior art date
Application number
PCT/EP2003/002533
Other languages
English (en)
French (fr)
Other versions
WO2003077414A2 (de
WO2003077414A8 (de
Inventor
Joachim Ziegler
Original Assignee
Huettinger Elektronik Gmbh
Joachim Ziegler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huettinger Elektronik Gmbh, Joachim Ziegler filed Critical Huettinger Elektronik Gmbh
Publication of WO2003077414A2 publication Critical patent/WO2003077414A2/de
Publication of WO2003077414A3 publication Critical patent/WO2003077414A3/de
Publication of WO2003077414A8 publication Critical patent/WO2003077414A8/de
Priority to US10/937,395 priority Critical patent/US7046088B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers

Abstract

Verfahren und Vorrichtung zur Leistungsverstärkung mit einem modifiziertem Klasse E-Verstärker, bei dem ein spezielles Anpassungsnetzwerk sowohl eine Bandpassfilterung für die Grundwelle als auch eine Widerstandsanpassung an die Last vornimmt und sich zugleich durch seine Bauart als Anpassungsnetzwerk zum Zusammenschalten mehrerer nicht identisch gleicher Leistungs-MOS-FETs eignet sowie eine solche Anpassungsschaltung sowie eine geeignete besonders verlustarme Treiberschaltung zur Ansteuerung solcher Leistungs-MOS-FETs
PCT/EP2003/002533 2002-03-12 2003-03-12 Leistungsverstärker WO2003077414A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/937,395 US7046088B2 (en) 2002-03-12 2004-09-10 Power amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10211609.1 2002-03-12
DE10211609A DE10211609B4 (de) 2002-03-12 2002-03-12 Verfahren und Leistungsverstärker zur Erzeugung von sinusförmigen Hochfrequenzsignalen zum Betreiben einer Last

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/937,395 Continuation US7046088B2 (en) 2002-03-12 2004-09-10 Power amplifier

Publications (3)

Publication Number Publication Date
WO2003077414A2 WO2003077414A2 (de) 2003-09-18
WO2003077414A3 true WO2003077414A3 (de) 2004-04-08
WO2003077414A8 WO2003077414A8 (de) 2004-04-29

Family

ID=27797815

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/002533 WO2003077414A2 (de) 2002-03-12 2003-03-12 Leistungsverstärker

Country Status (3)

Country Link
US (1) US7046088B2 (de)
DE (1) DE10211609B4 (de)
WO (1) WO2003077414A2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0404121D0 (en) * 2004-02-25 2004-03-31 Univ Belfast Class E power amplifier circuit and associated transmitter circuits
JP2008537467A (ja) * 2005-04-20 2008-09-11 エヌエックスピー ビー ヴィ 並列配置された線形増幅器およびｄｃ−ｄｃコンバータ
GB2426134B (en) * 2005-05-12 2009-06-10 Univ Bristol Amplifiers
DE102005050622A1 (de) * 2005-10-21 2007-05-03 Infineon Technologies Ag Sendeendstufe mit einstellbarer Ausgangsleistung und Verfahren zum Verstärken eines Signals in einer Sendeendstufe
US7777567B2 (en) * 2007-01-25 2010-08-17 Mks Instruments, Inc. RF power amplifier stability network
DE102007026784A1 (de) * 2007-06-09 2008-12-24 Isle Gmbh Verfahren zur Bestimmung von Kapazitäts-Spannungskennlinien elektronischer Schaltelemente
JP5606312B2 (ja) * 2007-07-23 2014-10-15 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト プラズマ給電装置
FR2919762B1 (fr) 2007-08-02 2009-10-02 Thales Sa Coupleur de puissance pour generateur haute frequence industrielle
JP2009094805A (ja) * 2007-10-09 2009-04-30 Sumitomo Electric Ind Ltd 増幅器
US20090121555A1 (en) * 2007-11-08 2009-05-14 Augustyn Michael T Vehicle audio system power supply
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
WO2011123124A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
EP2297377B1 (de) 2008-05-30 2017-12-27 Colorado State University Research Foundation Auf plasma basierende chemikalienquellenvorrichtung und verfahren zu ihrer verwendung
US7948312B2 (en) * 2009-05-13 2011-05-24 Qualcomm, Incorporated Multi-bit class-D power amplifier system
WO2011046979A2 (en) 2009-10-12 2011-04-21 Cyclos Semiconductor, Inc. Method for selecting natural frequency in resonant clock distribution networks with no inductor overhead
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
EP2552340A4 (de) 2010-03-31 2015-10-14 Univ Colorado State Res Found Plasmavorrichtung mit flüssig-gas-schnittstelle
WO2011148711A1 (ja) * 2010-05-27 2011-12-01 京セラ株式会社 増幅回路ならびにそれを用いた送信装置および通信装置
CN102170277A (zh) * 2011-01-20 2011-08-31 中国科学院半导体研究所 基于移相相与获取皮秒精度窄脉宽ttl信号的方法
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
WO2016147272A1 (ja) * 2015-03-13 2016-09-22 日本電気株式会社 生体検知装置、生体検知方法、および、記録媒体
DE102015212232B4 (de) 2015-06-30 2020-03-05 TRUMPF Hüttinger GmbH + Co. KG Leistungscombiner zur Kopplung von Hochfrequenzsignalen und Leistungscombineranordnung mit einem solchen Leistungscombiner
JP2020526965A (ja) 2017-06-30 2020-08-31 エアリティー・テクノロジーズ・インコーポレイテッドＡｉｒｉｔｙ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． 抵抗性出力インピーダンスのための高利得共振増幅器
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10938358B2 (en) * 2018-10-31 2021-03-02 Kabushiki Kaisha Toshiba Digital power amplifier
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
CN113904421A (zh) * 2021-10-28 2022-01-07 丰码科技(南京)有限公司 一种用于自动导向车的信号源
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919656A (en) * 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US4717884A (en) * 1986-04-14 1988-01-05 Motorola, Inc. High efficiency RF power amplifier
JPH06334446A (ja) * 1993-05-26 1994-12-02 Shinsaku Mori 補助スイッチによる高出力型ｅ級増幅器
JPH07170132A (ja) * 1993-12-14 1995-07-04 Matsushita Electric Works Ltd Ｅ級プッシュプル電力増幅回路
US5535438A (en) * 1994-05-10 1996-07-09 Panasonic Technologies, Inc. Phase linear class E amplifier for a satellite communication terminal which communicates with a low earth orbiting satellite

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3942560C2 (de) 1989-12-22 1996-05-02 Dressler Hochfrequenztechnik G Hochfrequenz-Generator für einen Plasma erzeugenden Verbraucher
US5187580A (en) * 1991-02-04 1993-02-16 Advanced Energy Industries, Inc. High power switch-mode radio frequency amplifier method and apparatus
DE4119738C2 (de) 1991-06-15 1995-05-11 Dressler Hochfrequenztechnik G Hochfrequenz-Generator
US6229392B1 (en) * 1992-01-30 2001-05-08 Advanced Energy Industries, Inc. High power switch-mode radio frequency amplifier method and apparatus
WO1993021685A1 (en) * 1992-04-16 1993-10-28 Advanced Energy Industries, Inc. Stabilizer for switch-mode powered rf plasma processing
GB2314474B (en) * 1996-06-21 2001-03-07 Univ Bristol Low power audio device
US6724255B2 (en) * 2000-10-10 2004-04-20 California Institute Of Technology Class E/F switching power amplifiers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919656A (en) * 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US4717884A (en) * 1986-04-14 1988-01-05 Motorola, Inc. High efficiency RF power amplifier
JPH06334446A (ja) * 1993-05-26 1994-12-02 Shinsaku Mori 補助スイッチによる高出力型ｅ級増幅器
JPH07170132A (ja) * 1993-12-14 1995-07-04 Matsushita Electric Works Ltd Ｅ級プッシュプル電力増幅回路
US5535438A (en) * 1994-05-10 1996-07-09 Panasonic Technologies, Inc. Phase linear class E amplifier for a satellite communication terminal which communicates with a low earth orbiting satellite

Non-Patent Citations (12)

* Cited by examiner, † Cited by third party
Title
ALBULET M ET AL: "Effect of switch duty ratio on the performance of Class E circuits", CIRCUITS AND SYSTEMS, 1997. PROCEEDINGS OF THE 40TH MIDWEST SYMPOSIUM ON SACRAMENTO, CA, USA 3-6 AUG. 1997, NEW YORK, NY, USA,IEEE, US, 3 August 1997 (1997-08-03), pages 99 - 105, XP010272487, ISBN: 0-7803-3694-1 *
EVERARD J.K.A., WILKINSON A.J.: "Highly efficient class E amplifiers", IEE COLLOQUIUM ON SOLID-STATE POWER AMPLIFIERS, no. 191, 16 December 1991 (1991-12-16), London, pages 3/1 - 3/4, XP002257867 *
GUPTA R ET AL: "FULLY MONOLITHIC CMOS RF POWER AMPLIFIERS: RECENT ADVANCES", IEEE COMMUNICATIONS MAGAZINE, IEEE SERVICE CENTER. PISCATAWAY, N.J, US, VOL. 37, NR. 4, PAGE(S) 94-98, ISSN: 0163-6804, XP000823993 *
KAWAHARA T ET AL: "Class E frequency multiplier driving Class E amplifier", TELECOMMUNICATIONS ENERGY CONFERENCE, 1997. INTELEC 97., 19TH INTERNATIONAL MELBOURNE, VIC., AUSTRALIA 19-23 OCT. 1997, NEW YORK, NY, USA,IEEE, US, PAGE(S) 617-621, ISBN: 0-7803-3996-7, XP010261410 *
KAZIMIERCZUK M K ET AL: "CLASS-E AMPLIFIER WITH AN INDUCTIVE IMPEDANCE INVERTER", IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, IEEE INC. NEW YORK, US, vol. 37, no. 2, 1 April 1990 (1990-04-01), pages 160 - 166, XP000115744, ISSN: 0278-0046 *
MERTENS, ET AL: "A 700 MHz 1-W Fully differential CMOS class-E power amplifier", JOURNAL OF SOLID-STATE CIRCUITS, vol. 37, no. 2, 28 February 2002 (2002-02-28), pages 137 - 141, XP002257866 *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 03 28 April 1995 (1995-04-28) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 10 30 November 1995 (1995-11-30) *
RAAB F H: "ELECTRONICALLY TUNABLE CLASS-E POWER AMPLIFIER", 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST.(IMS 2001). PHOENIX, AZ, MAY 20 - 25, 2001, IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, NEW YORK, NY: IEEE, US, vol. 3 OF 3, 20 May 2001 (2001-05-20), pages 1513 - 1516, XP001067508, ISBN: 0-7803-6538-0 *
RAO GUDIMETLA V S ET AL: "Design and validation of the load networks for broadband class E amplifiers using nonlinear device models", MICROWAVE SYMPOSIUM DIGEST, 1999 IEEE MTT-S INTERNATIONAL ANAHEIM, CA, USA 13-19 JUNE 1999, PISCATAWAY, NJ, USA,IEEE, US, 13 June 1999 (1999-06-13), pages 823 - 826, XP010343368, ISBN: 0-7803-5135-5 *
TAN Q-S ET AL: "Class-E high efficiency power amplifiers", CIRCUITS AND SYSTEMS, 1992., PROCEEDINGS OF THE 35TH MIDWEST SYMPOSIUM ON WASHINGTON, DC, USA 9-12 AUG. 1992, NEW YORK, NY, USA,IEEE, US, 9 August 1992 (1992-08-09), pages 118 - 120, XP010057786, ISBN: 0-7803-0510-8 *
TSAI K-C ET AL: "A 1.9-GHZ, I-W CMOS CLASS-E POWER AMPLIFIER FOR WIRELESS COMMUNICATIONS", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE INC. NEW YORK, US, vol. 34, no. 7, July 1999 (1999-07-01), pages 962 - 970, XP000930330, ISSN: 0018-9200 *

Also Published As

Publication number Publication date
WO2003077414A2 (de) 2003-09-18
US20050088231A1 (en) 2005-04-28
WO2003077414A8 (de) 2004-04-29
DE10211609B4 (de) 2009-01-08
DE10211609A1 (de) 2003-10-09
US7046088B2 (en) 2006-05-16

Similar Documents

Publication Publication Date Title
WO2003077414A8 (de) Leistungsverstärker
MY136501A (en) Method and apparatus to match output impedance of combined outphasing power amplifiers
AU2002332018A1 (en) Single output stage power amplification for multimode applications
WO2006121650A3 (en) Power amplifier with an output matching network
WO2005101670A3 (en) Apparatus, methods and articles of manufacture for output impedance matching using multi-band signal processing
EP1605589A4 (de) Vergleichsschaltung
AU2003241095A1 (en) Electronic device and method of matching the impedance thereof
CA2595944A1 (en) Two stage microwave class e power amplifier
EP1191683A3 (de) Hochfrequenz-Leistungsverstärkerbaustein und drahtloses Kommunikationsgerät
WO2004061635A3 (en) Adaptive power control
DE60132601D1 (de)
WO2002060072A3 (en) Radio frequency transmitter and methods thereof
WO2006055891A3 (en) High efficiency doherty amplifier with a segmented main amplifier
EP1032120A3 (de) Leistungsverstärker, Leistungsregelungsverfahren für einen Leistungsverstärker und kommunikationsgerät
WO2004000006A3 (en) Method of transforming soybean
MY127331A (en) Method for reducing noise generated in a power amplifier
WO2011031213A3 (en) Power amplifier
AU2002252536A1 (en) Bond wire tuning of rf power transistors and amplifiers
ATE509426T1 (de) Leistungsvervielfachervorrichtung und -verfahren
TW200612656A (en) Dual-band power amplifier
AU2003234418A1 (en) Polyphase impedance transformation amplifier
AU2003260845A1 (en) Power amplifier and method for power amplification
AU2003263320A1 (en) Class-f doherty amplifier
WO2004034569A3 (en) Apparatus, methods and articles of manufacture for multiband signal processing
GB2375667A (en) Power booster method and apparatus for improving the performance of radio frequency linear power amplifiers

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: IN PCT GAZETTE 38/2003 UNDER (81) ADD "KR"

WWE Wipo information: entry into national phase

Ref document number: 10937395

Country of ref document: US

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP