WO2003081190A3 - Spectrally tunable detector - Google Patents

Spectrally tunable detector Download PDF

Info

Publication number
WO2003081190A3
WO2003081190A3 PCT/US2003/008103 US0308103W WO03081190A3 WO 2003081190 A3 WO2003081190 A3 WO 2003081190A3 US 0308103 W US0308103 W US 0308103W WO 03081190 A3 WO03081190 A3 WO 03081190A3
Authority
WO
WIPO (PCT)
Prior art keywords
spectrally tunable
optical detector
spectrally
detector
tunable optical
Prior art date
Application number
PCT/US2003/008103
Other languages
French (fr)
Other versions
WO2003081190A2 (en
Inventor
Barrett E Cole
Subash Krishnankutty
Arunkumar Subramanian
Robert E Higashi
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to AU2003225831A priority Critical patent/AU2003225831A1/en
Publication of WO2003081190A2 publication Critical patent/WO2003081190A2/en
Publication of WO2003081190A3 publication Critical patent/WO2003081190A3/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • G02B5/284Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12Generating the spectrum; Monochromators
    • G01J3/26Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/30Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36Investigating two or more bands of a spectrum by separate detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/42Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G01J3/427Dual wavelengths spectrometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors

Abstract

A spectrally tunable optical detector and methods of manufacture therefore are provided. In one illustrative embodiment, the tunable optical detector includes a tunable bandpass filter, a detector and readout electronics, each supported by a different substrate. The substrates are secured relative to one another to form the spectrally tunable optical detector.
PCT/US2003/008103 2002-03-18 2003-03-17 Spectrally tunable detector WO2003081190A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003225831A AU2003225831A1 (en) 2002-03-18 2003-03-17 Spectrally tunable detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/100,298 US7015457B2 (en) 2002-03-18 2002-03-18 Spectrally tunable detector
US10/100,298 2002-03-18

Publications (2)

Publication Number Publication Date
WO2003081190A2 WO2003081190A2 (en) 2003-10-02
WO2003081190A3 true WO2003081190A3 (en) 2003-12-31

Family

ID=28039773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/008103 WO2003081190A2 (en) 2002-03-18 2003-03-17 Spectrally tunable detector

Country Status (3)

Country Link
US (3) US7015457B2 (en)
AU (1) AU2003225831A1 (en)
WO (1) WO2003081190A2 (en)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US20070133001A1 (en) * 2001-09-12 2007-06-14 Honeywell International Inc. Laser sensor having a block ring activity
US7145143B2 (en) * 2002-03-18 2006-12-05 Honeywell International Inc. Tunable sensor
US7470894B2 (en) * 2002-03-18 2008-12-30 Honeywell International Inc. Multi-substrate package assembly
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
KR100489801B1 (en) * 2002-12-10 2005-05-16 한국전자통신연구원 Tunable wavelength optical filter and method of manufacturing the same
JP3786106B2 (en) * 2003-08-11 2006-06-14 セイコーエプソン株式会社 Wavelength tunable optical filter and manufacturing method thereof
JP3770326B2 (en) * 2003-10-01 2006-04-26 セイコーエプソン株式会社 Analysis equipment
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7527995B2 (en) * 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7920135B2 (en) 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7653371B2 (en) 2004-09-27 2010-01-26 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
US7304784B2 (en) * 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7808703B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. System and method for implementation of interferometric modulator displays
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7657242B2 (en) * 2004-09-27 2010-02-02 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
US7372613B2 (en) 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7902534B2 (en) 2004-09-28 2011-03-08 Honeywell International Inc. Cavity ring down system having a common input/output port
US7586114B2 (en) 2004-09-28 2009-09-08 Honeywell International Inc. Optical cavity system having an orthogonal input
US20060076502A1 (en) * 2004-10-05 2006-04-13 Apa Enterprises, Inc. Method and apparatus for a photodetector responsive over a selectable wavelength range
US7760197B2 (en) * 2005-10-31 2010-07-20 Hewlett-Packard Development Company, L.P. Fabry-perot interferometric MEMS electromagnetic wave modulator with zero-electric field
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7903047B2 (en) 2006-04-17 2011-03-08 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
US7656532B2 (en) * 2006-04-18 2010-02-02 Honeywell International Inc. Cavity ring-down spectrometer having mirror isolation
EP1852935A1 (en) * 2006-05-05 2007-11-07 Interuniversitair Microelektronica Centrum Vzw Reconfigurable cavity resonator with movable micro-electromechanical elements as tuning means
JP2009538425A (en) * 2006-05-23 2009-11-05 リージェンツ オブ ザ ユニバーシティ オブ ミネソタ Thermal detector and infrared sensing method
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7527998B2 (en) 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7649189B2 (en) 2006-12-04 2010-01-19 Honeywell International Inc. CRDS mirror for normal incidence fiber optic coupling
JP2010512507A (en) * 2006-12-08 2010-04-22 リージェンツ オブ ザ ユニバーシティ オブ ミネソタ Detection beyond standard radiated noise limits using emissivity reduction and optical cavity coupling
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
JP2008188229A (en) * 2007-02-05 2008-08-21 Olympus Corp Endoscope system
WO2008106073A1 (en) * 2007-02-26 2008-09-04 Aegis Lightwave, Inc. Integrated wavelength selectable photodiode using tunable thin-film filters
WO2008104928A1 (en) * 2007-03-01 2008-09-04 Philips Intellectual Property & Standards Gmbh Optical detector device
US7643202B2 (en) 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7630121B2 (en) 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
JP2010538306A (en) 2007-07-31 2010-12-09 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Device for increasing the color shift of interferometric modulators
CN101802678B (en) * 2007-09-17 2014-03-12 高通Mems科技公司 Semi-transparent/ transflective lighted interferometric devices
US7880310B2 (en) * 2007-09-28 2011-02-01 Intel Corporation Direct device attachment on dual-mode wirebond die
KR20100090257A (en) 2007-10-19 2010-08-13 퀄컴 엠이엠스 테크놀로지스, 인크. Display with integrated photovoltaic device
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US8054527B2 (en) 2007-10-23 2011-11-08 Qualcomm Mems Technologies, Inc. Adjustably transmissive MEMS-based devices
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US8629398B2 (en) 2008-05-30 2014-01-14 The Regents Of The University Of Minnesota Detection beyond the standard radiation noise limit using spectrally selective absorption
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US7663756B2 (en) * 2008-07-21 2010-02-16 Honeywell International Inc Cavity enhanced photo acoustic gas sensor
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
DE102008053083B4 (en) * 2008-10-24 2011-07-28 Pyreos Ltd. Infrared light detector and production thereof
US7864326B2 (en) 2008-10-30 2011-01-04 Honeywell International Inc. Compact gas sensor using high reflectance terahertz mirror and related system and method
US8198590B2 (en) * 2008-10-30 2012-06-12 Honeywell International Inc. High reflectance terahertz mirror and related method
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
WO2010138763A1 (en) 2009-05-29 2010-12-02 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US8154119B2 (en) 2010-03-31 2012-04-10 Toyota Motor Engineering & Manufacturing North America, Inc. Compliant spring interposer for wafer level three dimensional (3D) integration and method of manufacturing
CN102834761A (en) 2010-04-09 2012-12-19 高通Mems科技公司 Mechanical layer and methods of forming the same
US8269972B2 (en) 2010-06-29 2012-09-18 Honeywell International Inc. Beam intensity detection in a cavity ring down sensor
US8437000B2 (en) 2010-06-29 2013-05-07 Honeywell International Inc. Multiple wavelength cavity ring down gas sensor
US8322191B2 (en) 2010-06-30 2012-12-04 Honeywell International Inc. Enhanced cavity for a photoacoustic gas sensor
WO2012024238A1 (en) 2010-08-17 2012-02-23 Qualcomm Mems Technologies, Inc. Actuation and calibration of a charge neutral electrode in an interferometric display device
JP5640549B2 (en) 2010-08-19 2014-12-17 セイコーエプソン株式会社 Optical filter, optical filter manufacturing method, and optical device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
JP5640659B2 (en) * 2010-11-02 2014-12-17 セイコーエプソン株式会社 Optical filter, optical filter manufacturing method, and optical device
JP5630227B2 (en) * 2010-11-15 2014-11-26 セイコーエプソン株式会社 Optical filter and method for manufacturing optical filter
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
JP5786424B2 (en) 2011-04-11 2015-09-30 セイコーエプソン株式会社 Wavelength variable interference filter, optical module, and electronic device
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8803001B2 (en) 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
US9947688B2 (en) 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
EP2551635A1 (en) * 2011-07-26 2013-01-30 Hexagon Technology Center GmbH Optical measurement system with filter unit for extracting electromagnetic radiation
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
JP5988690B2 (en) 2012-05-18 2016-09-07 浜松ホトニクス株式会社 Spectroscopic sensor
JP5875936B2 (en) 2012-05-18 2016-03-02 浜松ホトニクス株式会社 Spectroscopic sensor
JP5926610B2 (en) * 2012-05-18 2016-05-25 浜松ホトニクス株式会社 Spectroscopic sensor
JP5987573B2 (en) * 2012-09-12 2016-09-07 セイコーエプソン株式会社 Optical module, electronic device, and driving method
JP6186692B2 (en) * 2012-10-01 2017-08-30 セイコーエプソン株式会社 Wavelength variable interference filter, optical filter device, optical module, and electronic apparatus
US9683932B2 (en) 2013-09-12 2017-06-20 Halliburton Energy Services, Inc. Variable ICE and methods for measuring sample properties with the same
TWI502176B (en) * 2013-09-23 2015-10-01 Ind Tech Res Inst Tunable filter element and menufacturing method thereof
MX361240B (en) * 2013-12-18 2018-11-30 Halliburton Energy Services Inc Optical computing device having detector with non-planar semiconductor structure.
US20160232858A1 (en) * 2015-02-11 2016-08-11 Qualcomm Mems Technologies, Inc. Creep resistant reflective structure in mems display
CN111356907B (en) * 2017-08-31 2023-06-23 芬兰国家技术研究中心股份公司 Heat detector and heat detector array
FR3073941B1 (en) * 2017-11-21 2021-01-15 Commissariat Energie Atomique REDUCED-DIAPHOTIE ELECTROMAGNETIC RADIATION DETECTION DEVICE
DE102018212755A1 (en) * 2018-07-31 2020-02-06 Robert Bosch Gmbh Spectrometer device and method for producing a spectrometer device
US10840391B1 (en) * 2019-04-26 2020-11-17 Visera Technologies Company Limited Light filter structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0667548A1 (en) * 1994-01-27 1995-08-16 AT&T Corp. Micromechanical modulator
US5550373A (en) * 1994-12-30 1996-08-27 Honeywell Inc. Fabry-Perot micro filter-detector
US6080988A (en) * 1996-12-20 2000-06-27 Nikon Corporation Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same
US6296779B1 (en) * 1996-05-31 2001-10-02 The Regents Of The University Of California Method of fabricating a sensor
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US20020031155A1 (en) * 1998-06-26 2002-03-14 Parviz Tayebati Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614961A (en) * 1984-10-09 1986-09-30 Honeywell Inc. Tunable cut-off UV detector based on the aluminum gallium nitride material system
US4870224A (en) * 1988-07-01 1989-09-26 Intel Corporation Integrated circuit package for surface mount technology
FR2639711B1 (en) * 1988-11-25 1992-12-31 Elf Aquitaine METHOD FOR THE SIMULTANEOUS DETECTION OF SEVERAL GASES IN A GAS MIXTURE, AND APPARATUS FOR CARRYING OUT SAID METHOD
US4973131A (en) * 1989-02-03 1990-11-27 Mcdonnell Douglas Corporation Modulator mirror
US5022745A (en) * 1989-09-07 1991-06-11 Massachusetts Institute Of Technology Electrostatically deformable single crystal dielectrically coated mirror
JP2798774B2 (en) 1990-02-28 1998-09-17 三洋電機株式会社 Optical sensor and manufacturing method thereof
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
JPH0595130A (en) 1991-10-01 1993-04-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetector
US6147756A (en) * 1992-01-22 2000-11-14 Northeastern University Microspectrometer with sacrificial layer integrated with integrated circuit on the same substrate
US5909280A (en) * 1992-01-22 1999-06-01 Maxam, Inc. Method of monolithically fabricating a microspectrometer with integrated detector
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
JPH0766331A (en) * 1993-08-02 1995-03-10 Motorola Inc Manufacture of semiconductor device package
JP3019132B2 (en) 1994-04-18 2000-03-13 日亜化学工業株式会社 Gallium nitride based compound semiconductor photo detector
US5512750A (en) * 1994-06-03 1996-04-30 Martin Marietta Corporation A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5723706A (en) * 1995-06-23 1998-03-03 Uop Process for the treatment of halogenated organic feedstocks
US5677538A (en) * 1995-07-07 1997-10-14 Trustees Of Boston University Photodetectors using III-V nitrides
US5900650A (en) * 1995-08-31 1999-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US5763943A (en) * 1996-01-29 1998-06-09 International Business Machines Corporation Electronic modules with integral sensor arrays
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
US6597713B2 (en) * 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
US6380531B1 (en) * 1998-12-04 2002-04-30 The Board Of Trustees Of The Leland Stanford Junior University Wavelength tunable narrow linewidth resonant cavity light detectors
JP3538045B2 (en) * 1998-12-09 2004-06-14 三菱電機株式会社 RF circuit module
US6483130B1 (en) 1999-03-24 2002-11-19 Honeywell International Inc. Back-illuminated heterojunction photodiode
US6287940B1 (en) * 1999-08-02 2001-09-11 Honeywell International Inc. Dual wafer attachment process
US6295130B1 (en) * 1999-12-22 2001-09-25 Xerox Corporation Structure and method for a microelectromechanically tunable fabry-perot cavity spectrophotometer
US6590710B2 (en) * 2000-02-18 2003-07-08 Yokogawa Electric Corporation Fabry-Perot filter, wavelength-selective infrared detector and infrared gas analyzer using the filter and detector
US6237940B1 (en) * 2000-02-29 2001-05-29 Trw Inc. Inflator for side curtain
US6608711B2 (en) * 2000-03-03 2003-08-19 Axsun Technologies, Inc. Silicon on insulator optical membrane structure for fabry-perot MOEMS filter
US6384953B1 (en) * 2000-06-29 2002-05-07 The United States Of America As Represented By The Secretary Of The Navy Micro-dynamic optical device
US6492726B1 (en) * 2000-09-22 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection
US6627983B2 (en) * 2001-01-24 2003-09-30 Hsiu Wen Tu Stacked package structure of image sensor
SG95637A1 (en) * 2001-03-15 2003-04-23 Micron Technology Inc Semiconductor/printed circuit board assembly, and computer system
US6404648B1 (en) * 2001-03-30 2002-06-11 Hewlett-Packard Co. Assembly and method for constructing a multi-die integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0667548A1 (en) * 1994-01-27 1995-08-16 AT&T Corp. Micromechanical modulator
US5550373A (en) * 1994-12-30 1996-08-27 Honeywell Inc. Fabry-Perot micro filter-detector
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US6296779B1 (en) * 1996-05-31 2001-10-02 The Regents Of The University Of California Method of fabricating a sensor
US6080988A (en) * 1996-12-20 2000-06-27 Nikon Corporation Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same
US20020031155A1 (en) * 1998-06-26 2002-03-14 Parviz Tayebati Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CHITICA N ET AL: "MONOLITHIC INP-BASED TUNABLE FILTER WITH 10-NM BANDWIDTH FOR OPTICAL DATA INTERCONNECTS IN THE 1500-NM BAND", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 5, May 1999 (1999-05-01), pages 584 - 586, XP000830421, ISSN: 1041-1135 *
CHUNG S-W ET AL: "Design and fabrication of 10x10 micro-spatial light modulator array for phase and amplitude modulation", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 78, no. 1, January 1999 (1999-01-01), pages 63 - 70, XP004244582, ISSN: 0924-4247 *
JERMAN J H ET AL: "A MINIATURE FABRY-PEROT INTERFEROMETER WITH A CORRUGATED SILICON DIAPHRAGM SUPPORT", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A29, no. 2, November 1991 (1991-11-01), pages 151 - 158, XP000241462, ISSN: 0924-4247 *
TAYEBATI P ET AL: "Microelectromechanical tunable filter with stable half symmetric cavity", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 34, no. 20, 1 October 1998 (1998-10-01), pages 1967 - 1968, XP006010390, ISSN: 0013-5194 *
TAYEBATI P ET AL: "Widely tunable Fabry-Perot filters using high-index-contrast DBRs", DESIGN AND MANUFACTURING OF WDM DEVICES, DALLAS, TX, USA, 4-5 NOV. 1997, vol. 3234, Proceedings of the SPIE - The International Society for Optical Engineering, 1998, SPIE-Int. Soc. Opt. Eng, USA, pages 206 - 218, XP009014426, ISSN: 0277-786X *

Also Published As

Publication number Publication date
WO2003081190A2 (en) 2003-10-02
US20030173499A1 (en) 2003-09-18
US7071566B2 (en) 2006-07-04
US20030173504A1 (en) 2003-09-18
US7329853B2 (en) 2008-02-12
AU2003225831A1 (en) 2003-10-08
US7015457B2 (en) 2006-03-21
AU2003225831A8 (en) 2003-10-08
US20060054795A1 (en) 2006-03-16

Similar Documents

Publication Publication Date Title
WO2003081190A3 (en) Spectrally tunable detector
EP2141749B8 (en) Back-illuminated photodetector and method for manufacturing the same
AU2003298910A1 (en) Tunable optical filter
AU2002326893A1 (en) Tunable optical filter
AU2002351645A1 (en) Raman spectroscopic system with integrating cavity
WO2006137862A3 (en) Sers-active structures having nanoscale dimensions
WO2006023081A3 (en) Ceramics, and methods of making and using the same
WO2006017016A3 (en) Devices and methods of making the same
EP1695463A4 (en) Continuously tunable coupled opto-electronic oscillators having balanced opto-electronic filters
WO2003008431A1 (en) Process for producing sugar chain asparagine derivative
WO2010146510A3 (en) Interference filters with high transmission and large rejection range for mini-spectrometer
TW200631134A (en) Light shield for CMOS imager
AU2003210878A1 (en) Wavelength tunable laser
FI20022249A (en) Tuners, tunable polarization-interference filters, and tuning methods
AU2002368540A1 (en) Methods for forming tunable molecular gradients on substrates
AU2002319667A1 (en) Low resolution surface enhanced raman spectroscopy on sol-gel substrates
AU2003296152A1 (en) Photoelectric conversion element and process for fabricating the same, electronic apparatus and process for fabricating the same, and semiconductor layer and process for forming the same
AU2003296272A1 (en) Apparatus and method for manufacturing or working optical elements and/or optical forming elements, and such element.
WO2011032768A3 (en) Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus
AU2002305948A1 (en) Tunable optical filter
WO2006050458A3 (en) Tadalafil crystal forms and processes for preparing them
WO2001006305A3 (en) A multi-functional optical switch and its method of manufacture
AU2003298326A1 (en) Bandpass filter with pseudo-elliptic response
AU2003261443A1 (en) Interferential optical filter
AU2003256462A1 (en) Heterodyne optical spectrum analyzer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP