WO2003081564A1 - Afficheur d'image - Google Patents
Afficheur d'image Download PDFInfo
- Publication number
- WO2003081564A1 WO2003081564A1 PCT/JP2003/003351 JP0303351W WO03081564A1 WO 2003081564 A1 WO2003081564 A1 WO 2003081564A1 JP 0303351 W JP0303351 W JP 0303351W WO 03081564 A1 WO03081564 A1 WO 03081564A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- current
- power supply
- substrate
- light
- emitting element
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000010410 layer Substances 0.000 description 62
- 239000011521 glass Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000284 extract Substances 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Definitions
- the present invention relates to an image display device using a current-driven light-emitting device such as an organic electroluminescent device.
- FIG. 4 is a diagram showing an example of an image display device using an organic electroluminescent device.
- FIG. 4 (b) is a top view.
- Interlayer insulating layers 2 and 3 are laminated on a glass substrate 1, on which an anode 4 made of a transparent conductive film defining each light emitting area, an organic light emitting layer 5 and a cathode 6 are formed over the entire surface.
- a glass substrate 1 has a current driving transistor 8 supplied with current through a power supply line 7, a transistor 9 for controlling the current driving transistor 8 to ONZO, and a vertical electrode 1 for selecting a display cell to emit light.
- 0 and horizontal electrodes 11 are formed.
- the vertical electrode 10 and the horizontal electrode 11 are insulated by the interlayer insulating layer 2.
- Each transistor is protected by the interlayer insulating layer 3, the surface on the transistor is smoothed, and the current driving transistor 8 and the anode 4 are connected through a through hole in the interlayer insulating layer 3. Further, a facing sealing plate 12 is provided so as to cover the entire cathode 6 for sealing the image device.
- the current driving transistor 8 is turned on, and the power supply line 7 is connected to the anode 4. Then, current flows through the organic light emitting layer 5 and the cathode 6, and the selected cell emits light. This light emitting state continues until an OFF signal is applied to the transistor 9.
- An image display is performed by selectively driving each of the light emitting cells arranged in a matrix by a transistor.
- a current-driven light-emitting element such as an organic light-emitting element emits light by flowing a current, and thus it is necessary to keep flowing a current to maintain a light-emitting state. This Therefore, in order to drive the current-driven light-emitting device by active matrix driving, at least two active devices are required in total: a device for keeping current flowing and a device for controlling this device. In addition, a dedicated current supply line is required to keep the current flowing.
- the current driving type light emitting element is connected to the current driving transistor 8 and is connected between the common power supply line 7 and the common installation line (cathode).
- One current-driven light-emitting device requires at least two transistors.
- the wiring is a data line, a scanning line (vertical and horizontal electrodes), a power supply line, and a ground for selecting the current-driven light-emitting device. Since four wires are required, the structure becomes complicated. In particular, as the number of display pixels increases, the power supply lines need to have a low resistance because the current supply capability needs to be increased, and if the line width is increased to reduce the resistance, the aperture ratio of the pixels decreases. Problem.
- a color conversion method is used for a current-driven light-emitting element.
- the color conversion method is a method of converting light of a light emitting layer of a specific color into light of another color by a fluorescent dye, for example, converting a part of light of a blue light emitting layer into green and red.
- the color conversion layer is formed in connection with the light emitting layer.
- a thin film transistor is formed on the color conversion layer, and an organic electroluminescent layer is formed thereon.
- An organic electroluminescent layer is formed on the thin film transistor, and a color conversion layer is formed thereon.
- method (1) it is extremely difficult to form a transistor on the color conversion layer after forming the color conversion layer, since the color conversion layer is required to have heat resistance at a process temperature of 400 ° C or more when forming the transistor. It is.
- a color conversion layer is formed on the light emitting layer.
- the light emitting layer is extremely weak and vulnerable to moisture etc., it is directly on the light emitting layer. It is extremely difficult to form a color conversion layer.
- a top emission method that extracts light from the cathode side can be considered.
- a substrate on which a light-emitting layer using a light-transmissive cathode is formed and a substrate on which a color conversion layer is formed are separately manufactured, and these are bonded together to realize a color conversion type active drive.
- the light-emitting layer and the color conversion layer are optically separated, so that optical crosstalk cannot be avoided and the image quality deteriorates. There was a problem of doing it.
- An object of the present invention is to solve the above-mentioned problems, and it is an object of the present invention to enable a current of an electroluminescent element to be supplied without lowering the aperture ratio of a pixel, and to secure a high-quality light emitting element with high yield.
- the current-driven light-emitting element has no optical crosstalk and does not use a light-transmissive cathode.
- the present invention provides a current-driven light-emitting element
- the plurality of display cells having a structure in which the current driving type light emitting element and the current driving transistor are connected between a power supply line and a ground line, and the current driving transistor is selectively provided.
- An image display device for driving and displaying an image is characterized in that a power supply electrode column for supplying a current to each display cell is formed on a power supply common electrode formed on a counter substrate surface parallel to the substrate.
- An image display device is provided.
- the power supply electrode pillar is connected to a power supply pad provided in a notch formed in a part of a cathode formed on the current driven light emitting element, and the power supply electrode pillar is formed through the pad.
- it is connected to a driving transistor.
- the present invention provides a power supply electrode extending between both substrates by driving a substrate on which a current driving transistor is formed and a substrate on which a current driving type light emitting element is formed, by driving the driving transistor. Individually through the pillar to each pixel of the current driven light emitting device Provided is an image display device which supplies an electric current to display an image.
- an anode, a light-emitting layer, and a cathode are sequentially formed on the substrate on which the current-driven light-emitting element is formed, and a cutout is formed in the light-emitting layer and the cathode for each anode.
- a power supply electrode pillar extending from the substrate on which the current driving transistor is formed is connected to the notch.
- the current-driven light-emitting device may have a color conversion layer.
- a color conversion layer, an anode, a light emitting layer, and a cathode are sequentially formed on the substrate on which the current-driven light emitting element is formed, and the light emitting layer and the cathode are cut for each anode. It is preferable that a power supply electrode pillar extending from the substrate on which the notch portion is formed and the current driving transistor is formed is connected to the notch portion.
- FIG. 1 is a diagram showing an example of the image display device of the present invention.
- FIG. 2 is a diagram showing another example of the image display device of the present invention.
- FIG. 3 is a diagram showing another example of the image display device of the present invention.
- FIG. 4 is a diagram showing a conventional example of an image display device using an organic electroluminescent element.
- the present invention relates to an image display device using a current-driven light-emitting element such as an organic electroluminescent element, and in this image display device, a substrate on which a current-driven light-emitting element is formed; It is characterized by providing a power supply electrode column for supplying a current between the light emitting element and an opposing substrate with the light emitting element interposed therebetween.
- a power supply electrode column for supplying a current between the light emitting element and an opposing substrate with the light emitting element interposed therebetween.
- the image display device of the present invention has three modes.
- a power supply common electrode is provided on a substrate facing a substrate on which a current-driven light emitting element is formed, and a power supply electrode pillar formed between the power supply common electrode and the substrate.
- the second mode is a current driving transistor and an organic light emitting layer. Are formed on separate substrates, and these substrates are connected by power supply electrode pillars.
- a current driving transistor and an organic light emitting layer having a color conversion layer are formed on separate substrates, and a power supply electrode pillar is provided between the substrates. To supply current.
- FIG. 1 is a diagram illustrating an example of an image display device according to this embodiment.
- FIG. 1A is a cross-sectional view
- FIG. 1B is a top view. Since the same numbers as those in FIG. 4 indicate the same contents, detailed description thereof will be omitted.
- an interlayer insulating layers 2 and 3 an anode 4 made of a transparent conductive film, an organic light emitting layer 5, and a cathode 6 are formed on a glass substrate 1, and a current driving transistor 8 formed on the glass substrate 1 is formed. A current is supplied to the anode 4 through the anode.
- a power supply common electrode 20 is formed on the entire surface of the opposing substrate 13 (corresponding to the opposing sealing plate 12 in FIG. 4) opposed to the cathode 6 disposed opposite to the glass substrate 1. Then, a power supply electrode column 21 for supplying a current to the current driving transistor 8 of each display cell is formed on the power supply common electrode 20.
- the power supply electrode pillar is made of metal or conductive resin, and also has a function as a spacer between the substrates. Then, a cutout is formed in a part of the cathode 6 and the organic light emitting layer 5 formed on the entire surface of the glass substrate 1 for each anode that defines each light emitting area of the display cell, and power is supplied to this part.
- a pad 22 is formed, and this is connected to each power supply electrode pillar 21.
- the vertical electrode 10 When the transistor 9 of the display cell selected by the horizontal electrode 11 is turned on, the corresponding current driving transistor 8 is turned on, and current flows through the anode 4, the organic light emitting layer 5, and the cathode 6, and the selected transistor is turned on. The cell emits light.
- the power supply line is not formed on the glass substrate 1 as in the related art, and the current is supplied from the power supply electrode pillar 21 extending vertically from the opposing substrate, so that the light emitting area is limited by the power supply line.
- a high aperture ratio can be ensured without any need.
- the substrate 12 is also provided as a sealing plate in the conventional one, and is also used for forming the common electrode for power supply. Therefore, the aperture ratio can be increased while maintaining the conventional structure.
- a current-driven light-emitting element such as an organic electroluminescent element
- wiring for supplying power to each pixel is required on the same surface as the light-emitting element, which reduces the aperture ratio of the pixel.
- a power supply common electrode is formed on the opposing sealing substrate, and a current is supplied to each pixel from the power supply electrode pillar. This eliminates the need for power supply lines on the board, and enables a high aperture ratio to be realized.
- the substrate on which the current driving transistor is formed and the substrate on which the organic light emitting layer is formed are separated, and the current is passed through a power supply electrode column extending between the substrates for each display cell with both substrates facing each other.
- the current is supplied without lowering the aperture ratio, and both substrates having different yields can be separately formed.
- a current driving transistor 8 On the glass substrate 1, a current driving transistor 8, a transistor for controlling ON / OFF of the current driving transistor 8, a vertical electrode and a horizontal electrode for selecting a display cell to emit light, and a current driving transistor 8 are formed.
- the power supply electrode pillar 21 extends from the power supply pad 22 connected to the transistor 8 through the interlayer insulating layer 3 to the opposing substrate.
- the vertical and horizontal electrodes are isolated by an interlayer insulating layer 2, each transistor is protected by an interlayer insulating layer 3, and the surface on the transistor is smoothed. In this embodiment, since no electrode is formed on the interlayer insulating layer 3, the electrode can be omitted.
- an anode 23 made of a transparent electrode is formed for each section defining each light emitting area.
- An organic light emitting layer 24 and a cathode 25 are laminated on the entire surface of the substrate on the anode, and a cutout is formed in a part of the organic light emitting layer 24 and the cathode 25 for each anode.
- Power supply electrode column 21 is connected to the anode 23.
- Power supply electrode pole 21 is made of metal or conductive resin. It also has a function as a spacer between substrates.
- the glass substrate 1 is used as a circuit board for selectively driving the current-driven light-emitting element, and the current-driven light-emitting element is formed on the glass substrate 13 facing the current-driven light-emitting element.
- the current supply to the element is performed by the power supply electrode pillar 21 extending vertically from the glass substrate 1 side.
- the current drive type light emitting element side substrate eliminates the need for current drive transistors and associated wiring.
- the light emitting area is not limited by the supply line or the like, and a high aperture ratio can be secured. Further, the quality control of the current driving transistor circuit substrate and the current driving type light emitting element substrate can be performed separately.
- a wiring for supplying power to each pixel is conventionally required on the same surface as the current-driven light-emitting element.
- the current driving transistor circuit substrate and the current driving type light emitting element substrate are separated and opposed to each other, and the current is supplied from the opposing current driving transistor circuit substrate to each pixel. Since the current is supplied, the current driving transistor on the current driving type light emitting element side substrate and the wiring associated therewith become unnecessary, and a high aperture ratio can be realized. Furthermore, since the substrate on which the current-driven type optical element is formed and the substrate on which the drive element is formed can be completely separated, individual quality control becomes possible, and extremely high quality can be secured.
- a third embodiment of the image display device of the present invention will be described.
- the image display device of the present embodiment will be described with reference to FIG.
- a substrate on which a current driving transistor is formed and a substrate on which an organic light emitting layer having a color conversion layer is formed are provided.
- the current is supplied through an electrode pillar extending between the two substrates for each display cell with the two substrates facing each other.
- a current driving transistor 8 On the glass substrate 1, there are formed a current driving transistor 8, a transistor for controlling the current driving transistor 8 on-off, a vertical electrode and a horizontal electrode for selecting a display cell to emit light, and a current driving transistor.
- a power supply electrode column 21 protrudes from the power supply pad 22 connected to the transistor 8 through the interlayer insulating layer 3 and extends to the opposing substrate.
- the vertical and horizontal electrodes are insulated by the eyebrow insulating layer 2, each transistor is protected by the interlayer insulating layer 3, and the surface on the transistor is smoothed. In this embodiment, since no electrode is formed on the interlayer insulating layer 3, the electrode can be omitted.
- a color conversion layer 26 is formed by patterning by a photolithography process, and an anode 23 made of a transparent electrode is formed on each of the sections defining each light emitting area. Formed.
- An organic light emitting layer 24 and a cathode 25 are laminated on the entire surface of the substrate on the anode, and a cutout is formed in a part of the organic light emitting layer 24 and the cathode 25 for each anode.
- the power supply electrode column 21 is connected to the anode 23.
- the power supply electrode column 21 is made of metal or conductive resin, and also has a function as a spacer between both substrates.
- the current driving transistor 8 is selected by the vertical electrode and the horizontal electrode formed on the glass substrate 1 side to conduct, and the current driving transistor 8 is connected through the power supply electrode column 21 connected to the current driving transistor.
- a current flows through the anode 22 made of a transparent conductive film, the organic light emitting layer 23, and the cathode 24, the selected cell emits light, and light passing through the transparent conductive film is partially converted by the color conversion layer 26, Color light output can be obtained from the glass substrate 13 side.
- the glass substrate 1 side is a circuit board for selectively driving the current driven type light emitting element, and the current driven type light emitting element having the color conversion layer on the glass substrate 13 side facing the glass substrate 1 side.
- the current driving type light emitting element having the color conversion layer can be formed very easily, and a high-definition image display can be performed, and the current driving transistor circuit board and the current driving type light emitting element can be formed. It is possible to control the quality of the die light emitting element substrate individually.
- current-driven light-emitting devices such as organic electroluminescent devices are driven by a color conversion method.
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10392143T DE10392143T5 (de) | 2002-03-22 | 2003-03-19 | Bildanzeigevorrichtung |
US10/476,340 US7106282B2 (en) | 2002-03-22 | 2003-03-19 | Image display |
AU2003221436A AU2003221436A1 (en) | 2002-03-22 | 2003-03-19 | Image display |
US11/353,902 US20060132009A1 (en) | 2002-03-22 | 2006-02-14 | Image displaying device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-80542 | 2002-03-22 | ||
JP2002080541A JP2003280552A (ja) | 2002-03-22 | 2002-03-22 | 画像表示装置 |
JP2002-80540 | 2002-03-22 | ||
JP2002080542A JP2003282254A (ja) | 2002-03-22 | 2002-03-22 | 画像表示装置 |
JP2002080540A JP2003280551A (ja) | 2002-03-22 | 2002-03-22 | 画像表示装置 |
JP2002-80541 | 2002-03-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/353,902 Division US20060132009A1 (en) | 2002-03-22 | 2006-02-14 | Image displaying device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003081564A1 true WO2003081564A1 (fr) | 2003-10-02 |
Family
ID=28457571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/003351 WO2003081564A1 (fr) | 2002-03-22 | 2003-03-19 | Afficheur d'image |
Country Status (6)
Country | Link |
---|---|
US (2) | US7106282B2 (ja) |
CN (1) | CN1543635A (ja) |
AU (1) | AU2003221436A1 (ja) |
DE (1) | DE10392143T5 (ja) |
TW (1) | TW573439B (ja) |
WO (1) | WO2003081564A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107275364A (zh) * | 2016-03-31 | 2017-10-20 | 三星显示有限公司 | 显示装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100665941B1 (ko) * | 2004-09-17 | 2007-01-09 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
KR100683737B1 (ko) * | 2004-12-13 | 2007-02-15 | 삼성에스디아이 주식회사 | 전계발광 디스플레이 장치 |
EP2271178A1 (en) * | 2008-04-11 | 2011-01-05 | Rohm Co., Ltd. | Organic el element |
US8022621B2 (en) * | 2008-07-31 | 2011-09-20 | Lg Display Co., Ltd. | Organic light emitting display device |
KR101223725B1 (ko) | 2011-01-10 | 2013-01-17 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
CN102569345B (zh) * | 2011-12-30 | 2016-04-20 | 昆山维信诺显示技术有限公司 | Oled彩色显示屏及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59116779A (ja) * | 1982-12-24 | 1984-07-05 | 富士通株式会社 | 平板状表示装置 |
JPH0431299U (ja) * | 1990-07-06 | 1992-03-13 | ||
US5717289A (en) * | 1996-01-30 | 1998-02-10 | Nec Corporation | Thin film electroluminescent element easily regulating emitted light to white |
US5773130A (en) * | 1996-06-06 | 1998-06-30 | Motorola, Inc. | Multi-color organic electroluminescent device |
JPH11111457A (ja) * | 1997-10-07 | 1999-04-23 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
JP2000021570A (ja) * | 1998-06-30 | 2000-01-21 | Idemitsu Kosan Co Ltd | El表示装置 |
JP2002260857A (ja) * | 2000-12-28 | 2002-09-13 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法および薄膜形成装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6175345B1 (en) * | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
US6501217B2 (en) * | 1998-02-02 | 2002-12-31 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
JP2001092381A (ja) * | 1999-09-27 | 2001-04-06 | Nec Corp | 有機elディスプレイおよびその製造方法 |
US6528951B2 (en) * | 2000-06-13 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US20040100176A1 (en) * | 2002-11-21 | 2004-05-27 | Osram Opto Semiconductors Gmbh | Organic electronic device that filters colors |
-
2003
- 2003-03-19 WO PCT/JP2003/003351 patent/WO2003081564A1/ja active Application Filing
- 2003-03-19 CN CNA038007789A patent/CN1543635A/zh active Pending
- 2003-03-19 AU AU2003221436A patent/AU2003221436A1/en not_active Abandoned
- 2003-03-19 US US10/476,340 patent/US7106282B2/en not_active Expired - Fee Related
- 2003-03-19 DE DE10392143T patent/DE10392143T5/de not_active Withdrawn
- 2003-03-20 TW TW92106195A patent/TW573439B/zh not_active IP Right Cessation
-
2006
- 2006-02-14 US US11/353,902 patent/US20060132009A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59116779A (ja) * | 1982-12-24 | 1984-07-05 | 富士通株式会社 | 平板状表示装置 |
JPH0431299U (ja) * | 1990-07-06 | 1992-03-13 | ||
US5717289A (en) * | 1996-01-30 | 1998-02-10 | Nec Corporation | Thin film electroluminescent element easily regulating emitted light to white |
US5773130A (en) * | 1996-06-06 | 1998-06-30 | Motorola, Inc. | Multi-color organic electroluminescent device |
JPH11111457A (ja) * | 1997-10-07 | 1999-04-23 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
JP2000021570A (ja) * | 1998-06-30 | 2000-01-21 | Idemitsu Kosan Co Ltd | El表示装置 |
JP2002260857A (ja) * | 2000-12-28 | 2002-09-13 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法および薄膜形成装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107275364A (zh) * | 2016-03-31 | 2017-10-20 | 三星显示有限公司 | 显示装置 |
CN107275364B (zh) * | 2016-03-31 | 2023-08-11 | 三星显示有限公司 | 显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US7106282B2 (en) | 2006-09-12 |
AU2003221436A1 (en) | 2003-10-08 |
US20050017649A1 (en) | 2005-01-27 |
US20060132009A1 (en) | 2006-06-22 |
TW573439B (en) | 2004-01-21 |
DE10392143T5 (de) | 2004-07-29 |
CN1543635A (zh) | 2004-11-03 |
TW200306128A (en) | 2003-11-01 |
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