WO2003088320A3 - A method of fabricating vertical devices using a metal support film - Google Patents

A method of fabricating vertical devices using a metal support film Download PDF

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Publication number
WO2003088320A3
WO2003088320A3 PCT/US2003/009504 US0309504W WO03088320A3 WO 2003088320 A3 WO2003088320 A3 WO 2003088320A3 US 0309504 W US0309504 W US 0309504W WO 03088320 A3 WO03088320 A3 WO 03088320A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layers
supporting structure
beneficially
metal support
support film
Prior art date
Application number
PCT/US2003/009504
Other languages
French (fr)
Other versions
WO2003088320A2 (en
Inventor
Myung Cheol Yoo
Original Assignee
Oriol Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=28674401&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2003088320(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Oriol Inc filed Critical Oriol Inc
Priority to AU2003233447A priority Critical patent/AU2003233447A1/en
Priority to EP13174570.5A priority patent/EP2648236B1/en
Priority to EP03728297.7A priority patent/EP1502284B1/en
Priority to EP13154098.1A priority patent/EP2592664B1/en
Priority to JP2003585155A priority patent/JP2005522875A/en
Priority to KR1020047016180A priority patent/KR100880631B1/en
Priority to EP19158965.4A priority patent/EP3518296A1/en
Publication of WO2003088320A2 publication Critical patent/WO2003088320A2/en
Publication of WO2003088320A3 publication Critical patent/WO2003088320A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Abstract

A method of fabricating semiconductor devices, such as GaN LEDs (120), on insulating substrates (122), such as sapphire. Semiconductor layers (60) are produced on the insulating substrate using normal techniques. Trenches (124) that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure (200) is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure (240), preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer (250) can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (192) (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.
PCT/US2003/009504 2002-04-09 2003-03-31 A method of fabricating vertical devices using a metal support film WO2003088320A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
AU2003233447A AU2003233447A1 (en) 2002-04-09 2003-03-31 A method of fabricating vertical devices using a metal support film
EP13174570.5A EP2648236B1 (en) 2002-04-09 2003-03-31 Vertical light-emitting devices comprising a metal support film
EP03728297.7A EP1502284B1 (en) 2002-04-09 2003-03-31 A method of fabricating vertical devices using a metal support film
EP13154098.1A EP2592664B1 (en) 2002-04-09 2003-03-31 A vertical-topology semiconductor light-emitting device
JP2003585155A JP2005522875A (en) 2002-04-09 2003-03-31 Fabrication method of longitudinal device using metal support film
KR1020047016180A KR100880631B1 (en) 2002-04-09 2003-03-31 Vertical devices using a metal support film and method of fabricating the same
EP19158965.4A EP3518296A1 (en) 2002-04-09 2003-03-31 Vertical light-emitting devices comprising a metal support film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/118,317 2002-04-09
US10/118,317 US8294172B2 (en) 2002-04-09 2002-04-09 Method of fabricating vertical devices using a metal support film

Publications (2)

Publication Number Publication Date
WO2003088320A2 WO2003088320A2 (en) 2003-10-23
WO2003088320A3 true WO2003088320A3 (en) 2004-02-05

Family

ID=28674401

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/009504 WO2003088320A2 (en) 2002-04-09 2003-03-31 A method of fabricating vertical devices using a metal support film

Country Status (6)

Country Link
US (15) US8294172B2 (en)
EP (4) EP1502284B1 (en)
JP (3) JP2005522875A (en)
KR (1) KR100880631B1 (en)
AU (1) AU2003233447A1 (en)
WO (1) WO2003088320A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000477B2 (en) 2002-04-09 2015-04-07 Lg Innotek Co., Ltd. Vertical topology light-emitting device

Families Citing this family (148)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPQ008299A0 (en) * 1999-04-30 1999-05-27 G.J. Consultants Pty Ltd Isoflavone metabolites
TWI294699B (en) * 2006-01-27 2008-03-11 Epistar Corp Light emitting device and method of forming the same
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US8524573B2 (en) 2003-01-31 2013-09-03 Osram Opto Semiconductors Gmbh Method for separating a semiconductor layer from a substrate by irradiating with laser pulses
WO2004109764A2 (en) * 2003-06-04 2004-12-16 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
CN100452328C (en) * 2003-09-19 2009-01-14 霆激技术有限公司 Fabrication of conductive metal layer on semiconductor devices
CN1860599A (en) * 2003-09-19 2006-11-08 霆激科技股份有限公司 Fabrication of semiconductor drives
US20050156183A1 (en) * 2003-10-06 2005-07-21 Tzong-Liang Tsai Light-emitting device having reflecting layer formed under electrode
US6969626B2 (en) * 2004-02-05 2005-11-29 Advanced Epitaxy Technology Method for forming LED by a substrate removal process
US6884646B1 (en) * 2004-03-10 2005-04-26 Uni Light Technology Inc. Method for forming an LED device with a metallic substrate
KR20070013273A (en) * 2004-03-15 2007-01-30 팅기 테크놀러지스 프라이빗 리미티드 Fabrication of semiconductor devices
KR20070028364A (en) * 2004-04-07 2007-03-12 팅기 테크놀러지스 프라이빗 리미티드 Fabrication of reflective layer on semiconductor light emitting diodes
JP5336075B2 (en) * 2004-04-28 2013-11-06 バーティクル，インク Vertical semiconductor device
US7825006B2 (en) * 2004-05-06 2010-11-02 Cree, Inc. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
KR100595884B1 (en) * 2004-05-18 2006-07-03 엘지전자 주식회사 Method for manufacturing semiconductor device of Nitride chemical
TWI433343B (en) * 2004-06-22 2014-04-01 Verticle Inc Vertical structure semiconductor devices with improved light output
US7557380B2 (en) 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
CN100590898C (en) * 2004-07-29 2010-02-17 昭和电工株式会社 Positive electrode for semiconductor light-emitting device
WO2006011672A1 (en) 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
JP4817629B2 (en) * 2004-09-15 2011-11-16 京セラ株式会社 LIGHT EMITTING ELEMENT AND LIGHTING DEVICE USING THE LIGHT EMITTING ELEMENT
US20060054919A1 (en) * 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
EP2426743B1 (en) * 2004-10-22 2019-02-20 Seoul Viosys Co., Ltd GaN compound semiconductor light emitting element and method of manufacturing the same
JP2006128296A (en) * 2004-10-27 2006-05-18 Kyocera Corp Light-emitting element and illuminator using the same
KR100667508B1 (en) * 2004-11-08 2007-01-10 엘지전자 주식회사 Light emitting device and method for fabricating the same
TWI389334B (en) * 2004-11-15 2013-03-11 Verticle Inc Method for fabricating and separating semicondcutor devices
JP2006190973A (en) * 2004-12-06 2006-07-20 Sharp Corp Manufacturing method of light emitting element made of nitride-based compound semiconductor
US20060124941A1 (en) * 2004-12-13 2006-06-15 Lee Jae S Thin gallium nitride light emitting diode device
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
JP4848638B2 (en) * 2005-01-13 2011-12-28 ソニー株式会社 Method for forming semiconductor device and method for mounting semiconductor device
KR101165257B1 (en) * 2005-01-26 2012-07-19 서울옵토디바이스주식회사 Luminescence device and method of manufacturing the same
KR100597165B1 (en) * 2005-03-28 2006-07-04 삼성전기주식회사 Manufacturing method of vertically structured gan type light emitting diode device
GB2437848B (en) * 2005-05-09 2008-04-09 Chunghwa Picture Tubes Ltd Substrate-free chip light emitting diode and manufacturing method thereof
KR100638825B1 (en) * 2005-05-23 2006-10-27 삼성전기주식회사 Vertical structure semiconductor light emitting device and method for manufacturing the same
JP2006339384A (en) * 2005-06-01 2006-12-14 Kyocera Corp Light emitting element, method of manufacturing same, and illuminating apparatus using same
US7625778B2 (en) 2005-06-08 2009-12-01 Chunghwa Picture Tubes, Ltd. Method of manufacturing a substrate-free flip chip light emitting diode
KR100658303B1 (en) * 2005-07-04 2006-12-14 엘지전자 주식회사 Vertical type light emitting diode having metal holder
KR100606551B1 (en) * 2005-07-05 2006-08-01 엘지전자 주식회사 Method for fabricating light emitting devices
TWI253770B (en) * 2005-07-11 2006-04-21 Univ Nat Central Light emitting diode and manufacturing method thereof
KR100691111B1 (en) * 2005-08-09 2007-03-09 엘지전자 주식회사 Light emitting diode of vertical electrode type and fabricating method thereof
KR100632004B1 (en) * 2005-08-12 2006-10-09 삼성전기주식회사 Producing methods of nitride single crystal substrate and nitride semiconductor light emitting device
CN1921156A (en) * 2005-08-26 2007-02-28 鸿富锦精密工业（深圳）有限公司 Luminous dipolar object light source module and and method for preparing same
WO2007032421A1 (en) 2005-09-13 2007-03-22 Showa Denko K.K. Nitride semiconductor light emitting device and production thereof
KR100976311B1 (en) * 2005-09-16 2010-08-16 쇼와 덴코 가부시키가이샤 Production method for nitride semiconductor light emitting device
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
DE102005048153B4 (en) * 2005-10-06 2010-08-05 Infineon Technologies Ag Method for producing a semiconductor device with semiconductor chip and adhesive film
KR20070038793A (en) * 2005-10-07 2007-04-11 에피밸리 주식회사 Method of manufacturing semiconductor device
US8614449B1 (en) * 2005-10-11 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Protection for the epitaxial structure of metal devices
KR100657735B1 (en) * 2005-10-11 2006-12-14 엘지전자 주식회사 Method for fabricating light emitting diode of vertical type electrode
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
KR100752348B1 (en) * 2005-10-20 2007-08-27 (주) 비앤피 사이언스 Method of producing light emitting diode having vertical structure
CN101882657A (en) * 2005-10-29 2010-11-10 三星电子株式会社 Semiconductor device and fabricating method thereof
JP2007165862A (en) * 2005-11-15 2007-06-28 Toshiba Corp Method of manufacturing semiconductor device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
KR100710394B1 (en) * 2006-03-14 2007-04-24 엘지전자 주식회사 Method of manufacturing led having vertical structure
CN101485000B (en) 2006-06-23 2012-01-11 Lg电子株式会社 Light emitting diode having vertical topology and method of making the same
KR100851403B1 (en) * 2006-07-31 2008-08-08 삼성전자주식회사 Light emitting device and method for manufacturing light emitting device
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
US20080054291A1 (en) * 2006-08-31 2008-03-06 Samsung Electronics Co., Ltd. Vertical semiconductor light-emitting device and method of manufacturing the same
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
KR101189163B1 (en) * 2006-09-12 2012-10-10 엘지이노텍 주식회사 method for manufacturing light-emitting diode
KR100786802B1 (en) * 2006-09-26 2007-12-18 한국광기술원 Vertical type semiconductor light emitting diode and the method for manufacturing the same
TW200815885A (en) * 2006-09-29 2008-04-01 Chunghwa Picture Tubes Ltd Active device array substrate and cutting method thereof
KR20080030404A (en) * 2006-09-30 2008-04-04 서울옵토디바이스주식회사 Method of fabricating light emitting diode chip
KR20090099543A (en) * 2006-12-05 2009-09-22 나노 테라 인코포레이티드 Edge-emitting light-emitting diode arrays and methods of making and using the same
KR100886110B1 (en) * 2006-12-08 2009-02-27 고려대학교 산학협력단 Supporting substrates for semiconductor light emitting device and method of manufacturing vertical structured semiconductor light emitting device using the supporting substrates
KR101364167B1 (en) * 2007-02-15 2014-02-18 서울바이오시스 주식회사 Vertical light emitting diode and method of fabricating the same
JP4527197B2 (en) * 2007-02-21 2010-08-18 パナソニック株式会社 Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
KR100856230B1 (en) * 2007-03-21 2008-09-03 삼성전기주식회사 Light emitting device, method of manufacturing the same and monolithic light emitting diode array
KR100858359B1 (en) * 2007-03-22 2008-09-11 (주)웨이브스퀘어 Manufacturing method of vertically structured gan led device
JP2008244161A (en) * 2007-03-27 2008-10-09 Toyoda Gosei Co Ltd Method for forming electrode of group iii nitride-based compound semiconductor light-emitting element
US8088670B2 (en) * 2007-04-18 2012-01-03 Shin-Etsu Chemical Co., Ltd. Method for manufacturing bonded substrate with sandblast treatment
TWI411124B (en) * 2007-07-10 2013-10-01 Delta Electronics Inc Light emitting diode apparatus and manufacturing method thereof
US7621752B2 (en) * 2007-07-17 2009-11-24 Visteon Global Technologies, Inc. LED interconnection integrated connector holder package
US8187900B2 (en) * 2007-08-10 2012-05-29 Hong Kong Applied Science and Technology Research Institute Company Limited Optimization of polishing stop design
KR100900807B1 (en) * 2007-08-24 2009-06-04 재단법인서울대학교산학협력재단 Substrate for semiconductor device, method of fabricating the same and method of fabricating semiconductor device using the substrate
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
JP5288852B2 (en) * 2008-03-21 2013-09-11 スタンレー電気株式会社 Manufacturing method of semiconductor device
JP5220916B2 (en) * 2008-04-02 2013-06-26 ソン，ジュンオ Light emitting device and manufacturing method thereof
TWI447783B (en) * 2008-04-28 2014-08-01 Advanced Optoelectronic Tech Method of fabricating photoelectric device of iii-nitride based semiconductor and structure thereof
CN102106006B (en) * 2008-06-02 2014-12-10 Lg伊诺特有限公司 Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
CN101599418B (en) * 2008-06-02 2011-11-30 联胜光电股份有限公司 Laser-stripping method
US7754511B2 (en) * 2008-07-08 2010-07-13 High Power Opto. Inc. Laser lift-off method
KR100999699B1 (en) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 Light emitting device package
KR101108244B1 (en) 2008-12-31 2012-01-31 광주과학기술원 Method for Fabricating of Light Emitting Diode
KR101119009B1 (en) * 2009-03-09 2012-03-14 한국과학기술연구원 Method of forming light emitting device with separation by ion implantation
US20100244195A1 (en) * 2009-03-27 2010-09-30 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Host substrate for nitride based light emitting devices
CN101681975B (en) * 2009-03-30 2012-12-12 香港应用科技研究院有限公司 Main substrate of nitride-based illuminating device
JP6180112B2 (en) * 2009-04-20 2017-08-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． High magnetic field resistant intervention needle and integrated needle tracking system
KR100986544B1 (en) * 2009-06-10 2010-10-07 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP5534763B2 (en) * 2009-09-25 2014-07-02 株式会社東芝 Semiconductor light emitting device manufacturing method and semiconductor light emitting device
CN102054767B (en) * 2009-11-03 2013-02-13 联胜光电股份有限公司 Method of laser lift-off for light-emitting diode
JP5421071B2 (en) * 2009-11-05 2014-02-19 スタンレー電気株式会社 Manufacturing method of optical semiconductor device
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
TWI467798B (en) * 2009-12-28 2015-01-01 Hon Hai Prec Ind Co Ltd Method for making light emitting diode chip
US20130009172A1 (en) * 2010-03-24 2013-01-10 Sumitomo Bakelite Co., Ltd. Method of manufacture of light-emitting element and light-emitting element manufactured thereby
KR101028206B1 (en) * 2010-04-08 2011-04-11 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
CN102237348B (en) * 2010-04-20 2015-08-05 鸿富锦精密工业（深圳）有限公司 LED microarray packaging structure and manufacture method thereof
KR101330250B1 (en) 2010-05-14 2013-11-15 서울바이오시스 주식회사 Luminescence device
TW201216503A (en) * 2010-10-12 2012-04-16 Tekcore Co Ltd Method for fabricating a vertical light-emitting diode with high brightness
CN102456778B (en) * 2010-10-26 2014-11-05 展晶科技(深圳)有限公司 Manufacturing method for light-emitting diode chips
US8154034B1 (en) * 2010-11-23 2012-04-10 Invenlux Limited Method for fabricating vertical light emitting devices and substrate assembly for the same
JP5792375B2 (en) * 2011-05-19 2015-10-14 晶能光電（江西）有限公司Ｌａｔｔｉｃｅ Ｐｏｗｅｒ（Ｊｉａｎｇｘｉ）Ｃｏｒｐｏｒａｔｉｏｎ Production method and manufacturing method of gallium nitride base film chip
TWI512807B (en) * 2011-06-09 2015-12-11 Epistar Corp Methods of separating semiconductor device structures and the structures thereof
US8450188B1 (en) * 2011-08-02 2013-05-28 Micro Processing Technology, Inc. Method of removing back metal from an etched semiconductor scribe street
CN103890908B (en) * 2011-10-18 2016-08-24 富士电机株式会社 The stripping means of the supporting substrates of solid phase bound wafer and the manufacture method of semiconductor device
JP2013110137A (en) * 2011-11-17 2013-06-06 Disco Abrasive Syst Ltd Optical device layer transfer device and laser processing machine
JP5860272B2 (en) * 2011-11-24 2016-02-16 株式会社ディスコ Processing method of optical device wafer
JP5961989B2 (en) * 2011-12-02 2016-08-03 日亜化学工業株式会社 Semiconductor laser device and manufacturing method thereof
KR101221642B1 (en) 2012-02-28 2013-02-05 서울옵토디바이스주식회사 Luminescence device and method of manufacturing the same
JP5996254B2 (en) * 2012-04-26 2016-09-21 株式会社ディスコ Lift-off method
JP6017834B2 (en) * 2012-05-16 2016-11-02 Ｄｏｗａエレクトロニクス株式会社 Semiconductor element manufacturing method, semiconductor element assembly, and semiconductor element
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
KR101878748B1 (en) 2012-12-20 2018-08-17 삼성전자주식회사 Method of transferring graphene and method of manufacturing device using the same
SG11201503368TA (en) * 2013-01-29 2015-05-28 Univ Nanyang Tech Method of fabricating semiconductor devices
US9653647B2 (en) * 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
WO2015011583A1 (en) 2013-07-22 2015-01-29 Koninklijke Philips N.V. Method of separating light emitting devices formed on a substrate wafer
US9159871B2 (en) * 2014-01-13 2015-10-13 Epistar Corporation Light-emitting device having a reflective structure and a metal mesa and the manufacturing method thereof
KR102075994B1 (en) 2014-03-25 2020-02-12 삼성전자주식회사 Substrate separation device and substrate separation system
US20160276555A1 (en) * 2015-03-18 2016-09-22 Toyoda Gosei Co., Ltd. Light emitting device manufacturing method and light emitting device
US10468361B2 (en) * 2015-08-27 2019-11-05 Mikro Mesa Technology Co., Ltd. Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive
TWI572058B (en) * 2015-09-04 2017-02-21 錼創科技股份有限公司 Method for manufacturing light emitting device
TWI772253B (en) 2015-11-13 2022-08-01 晶元光電股份有限公司 Light-emitting device
JP6631782B2 (en) * 2015-11-16 2020-01-15 住友電工デバイス・イノベーション株式会社 Method for manufacturing semiconductor device
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
WO2017117151A1 (en) * 2015-12-29 2017-07-06 Light Share, LLC Optoelectronic semiconductor devices with enhanced light output
US11411137B2 (en) * 2016-02-05 2022-08-09 The Regents Of The University Of California III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
DE102016124646A1 (en) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component
US10446442B2 (en) * 2016-12-21 2019-10-15 Globalfoundries Inc. Integrated circuit chip with molding compound handler substrate and method
US10115711B2 (en) 2017-01-25 2018-10-30 International Business Machines Corporation Vertical light emitting diode with magnetic back contact
DE102017104752B4 (en) 2017-03-07 2022-10-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for transferring semiconductor bodies and semiconductor chip
US10325889B1 (en) 2018-01-12 2019-06-18 Mikro Mesa Technology Co., Ltd. Display device including LED devices with selective activation function
DE102018104785A1 (en) 2018-03-02 2019-09-05 Osram Opto Semiconductors Gmbh Method for producing a plurality of transferable components and component assembly of components
DE102018104778A1 (en) * 2018-03-02 2019-09-05 Osram Opto Semiconductors Gmbh Component assembly of optical components, method for producing a composite component and component with an optical component
US11387145B2 (en) 2018-09-19 2022-07-12 Semiconductor Components Industries, Llc Jet ablation die singulation systems and related methods
US10607889B1 (en) 2018-09-19 2020-03-31 Semiconductor Components Industries, Llc Jet ablation die singulation systems and related methods
US20210066547A1 (en) 2019-08-28 2021-03-04 Tslc Corporation Semiconductor Components And Semiconductor Structures And Methods Of Fabrication
WO2021226945A1 (en) * 2020-05-14 2021-11-18 重庆康佳光电技术研究院有限公司 Transfer method and display device
KR102545087B1 (en) * 2022-09-19 2023-06-20 웨이브로드 주식회사 Epitaxy die for semiconductor light emitting devices, semiconductor light emitting devices including the same and manufacturing method thereof
KR102566048B1 (en) * 2022-09-19 2023-08-14 웨이브로드 주식회사 Epitaxy die for semiconductor light emitting devices, semiconductor light emitting devices including the same and manufacturing method thereof

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5620557A (en) * 1993-12-27 1997-04-15 Toyoda Gosei Co., Ltd. Sapphireless group III nitride semiconductor and method for making same
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
US5929466A (en) * 1994-03-09 1999-07-27 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device
US6329216B1 (en) * 1997-05-15 2001-12-11 Rohm Co., Ltd. Method of manufacturing an AlGaInP light emitting device using auto-doping
US6335217B1 (en) * 1997-10-10 2002-01-01 Toyoda Gosei Co., Ltd. GaN type semiconductor device fabrication
US6358770B2 (en) * 1998-05-29 2002-03-19 Matsushita Electric Industrial Co., Ltd. Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
US6479839B2 (en) * 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6500689B2 (en) * 1996-11-29 2002-12-31 Toyoda Gosei Co., Ltd. Process for producing GaN related compound semiconductor

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US504004A (en) * 1893-08-29 Maurice trisdorfer
US686982A (en) * 1900-03-17 1901-11-19 Arthur W P Malins Line-clasp.
NL6706735A (en) * 1967-05-13 1968-11-14
DE2009283A1 (en) 1970-02-27 1971-09-02 Wieneke, Franz, Prof Dr Ing , 3406 Bovenden System for drying damp stalks and leaves
US3907620A (en) * 1973-06-27 1975-09-23 Hewlett Packard Co A process of forming metallization structures on semiconductor devices
FR2328286A1 (en) * 1975-10-14 1977-05-13 Thomson Csf PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH VERY LOW THERMAL RESISTANCE, AND DEVICES OBTAINED BY THIS PROCEDURE
US4406052A (en) * 1981-11-12 1983-09-27 Gte Laboratories Incorporated Non-epitaxial static induction transistor processing
JPS63178359U (en) 1987-05-12 1988-11-18
JP2953468B2 (en) * 1989-06-21 1999-09-27 三菱化学株式会社 Compound semiconductor device and surface treatment method thereof
US5034068A (en) * 1990-02-23 1991-07-23 Spectrolab, Inc. Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
JP3321185B2 (en) * 1990-09-28 2002-09-03 株式会社東芝 High voltage semiconductor device
US5631664A (en) * 1992-09-18 1997-05-20 Olympus Optical Co., Ltd. Display system utilizing electron emission by polarization reversal of ferroelectric material
US6500669B1 (en) 1994-05-04 2002-12-31 Massachusetts Institute Of Technology Programmable genotoxic agents and uses therefor
BE1008384A3 (en) * 1994-05-24 1996-04-02 Koninkl Philips Electronics Nv METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH SEMICONDUCTOR ELEMENTS MADE IN A LAYER SEMICONDUCTOR MATERIAL APPLIED ON A BEARING PLATE.
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JP3259811B2 (en) 1995-06-15 2002-02-25 日亜化学工業株式会社 Method for manufacturing nitride semiconductor device and nitride semiconductor device
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing process
DE69636088T2 (en) * 1995-11-06 2006-11-23 Nichia Corp., Anan A nitride compound semiconductor device
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
EP0809861B1 (en) * 1995-12-14 2005-06-08 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device
JP3292044B2 (en) * 1996-05-31 2002-06-17 豊田合成株式会社 P-conductivity group III nitride semiconductor electrode pad, device having the same, and device manufacturing method
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
JP4018177B2 (en) * 1996-09-06 2007-12-05 株式会社東芝 Gallium nitride compound semiconductor light emitting device
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JPH10177974A (en) 1996-12-18 1998-06-30 Nippon Steel Corp Manufacturing method of device chip on hetero epistaxial wafer
KR100660152B1 (en) * 1997-01-09 2006-12-21 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Device
JP4146527B2 (en) 1997-01-24 2008-09-10 ローム株式会社 Semiconductor light emitting device and manufacturing method thereof
JPH10294531A (en) 1997-02-21 1998-11-04 Toshiba Corp Nitride compound semiconductor light emitting element
JPH10303460A (en) 1997-02-27 1998-11-13 Toshiba Corp Semiconductor element and its manufacture
JPH10247747A (en) * 1997-03-05 1998-09-14 Toshiba Corp Semiconductor light emitting device and manufacture thereof
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6121552A (en) 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
JP3914615B2 (en) 1997-08-19 2007-05-16 住友電気工業株式会社 Semiconductor light emitting device and manufacturing method thereof
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
JP3116085B2 (en) * 1997-09-16 2000-12-11 東京農工大学長 Semiconductor element formation method
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US5972781A (en) * 1997-09-30 1999-10-26 Siemens Aktiengesellschaft Method for producing semiconductor chips
JP3517867B2 (en) * 1997-10-10 2004-04-12 豊田合成株式会社 GaN-based semiconductor devices
JPH11126923A (en) 1997-10-21 1999-05-11 Toyoda Gosei Co Ltd Method for manufacturing gallium nitride compound semiconductor element
JP2965015B2 (en) 1997-10-29 1999-10-18 日本電気株式会社 Heat-resistant electrode for semiconductor device and method of manufacturing the same
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
JP3643225B2 (en) 1997-12-03 2005-04-27 ローム株式会社 Optical semiconductor chip
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
KR100611352B1 (en) * 1998-03-12 2006-09-27 니치아 카가쿠 고교 가부시키가이샤 Nitride semiconductor device
JP4183299B2 (en) * 1998-03-25 2008-11-19 株式会社東芝 Gallium nitride compound semiconductor light emitting device
US6078064A (en) * 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
JP2000011859A (en) * 1998-06-22 2000-01-14 Yamaha Corp Manufacture of field emission type element
JP3287458B2 (en) * 1998-06-24 2002-06-04 日本電気株式会社 Ultra-high speed, low voltage drive avalanche multiplication type semiconductor photo detector
DE19829197C2 (en) * 1998-06-30 2002-06-20 Siemens Ag Component emitting and / or receiving radiation
US6207973B1 (en) * 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
US6008507A (en) * 1998-09-01 1999-12-28 Kingmax Technology Inc. Photoelectric semiconductor device having a GaAsP substrate
US6735230B1 (en) * 1998-09-10 2004-05-11 Rohm, Co., Ltd Semiconductor luminous elements and semiconductor laser
JP3525061B2 (en) * 1998-09-25 2004-05-10 株式会社東芝 Method for manufacturing semiconductor light emitting device
JP3739951B2 (en) 1998-11-25 2006-01-25 東芝電子エンジニアリング株式会社 Semiconductor light emitting device and manufacturing method thereof
JP2000196197A (en) 1998-12-30 2000-07-14 Xerox Corp Structure of nitride laser diode where growth substrate is eliminated and method for manufacturing nitride diode array structure
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
US6876003B1 (en) * 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
JP3881472B2 (en) * 1999-04-15 2007-02-14 ローム株式会社 Manufacturing method of semiconductor light emitting device
US6258699B1 (en) * 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
JP2000323797A (en) * 1999-05-10 2000-11-24 Pioneer Electronic Corp Nitride semiconductor laser and its manufacture
GB9912583D0 (en) * 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
JP2001007399A (en) 1999-06-23 2001-01-12 Toshiba Corp Semiconductor light emitting element
US6803603B1 (en) * 1999-06-23 2004-10-12 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
JP3705016B2 (en) * 1999-06-28 2005-10-12 豊田合成株式会社 Translucent electrode film and group III nitride compound semiconductor device
DE19945007A1 (en) 1999-09-20 2001-03-22 Opto Tech Corp Light emitting diode used in computer peripherals and instrument displays comprises an epitaxial layer, a composite layer, a conducting substrate, a counter electrode and a front electrode
JP3893874B2 (en) 1999-12-21 2007-03-14 日亜化学工業株式会社 Manufacturing method of nitride semiconductor light emitting device
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
JP4432180B2 (en) * 1999-12-24 2010-03-17 豊田合成株式会社 Group III nitride compound semiconductor manufacturing method, group III nitride compound semiconductor device, and group III nitride compound semiconductor
JP3614070B2 (en) 2000-01-17 2005-01-26 日亜化学工業株式会社 Nitride semiconductor light emitting diode
KR100790964B1 (en) 2000-02-16 2008-01-04 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Laser Device
JP4501225B2 (en) 2000-02-21 2010-07-14 日亜化学工業株式会社 Light emitting device and method for manufacturing light emitting device
JP4026294B2 (en) 2000-03-07 2007-12-26 豊田合成株式会社 Method for producing group III nitride compound semiconductor device
JP2001267242A (en) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Group iii nitride-based compound semiconductor and method of manufacturing the same
JP4060511B2 (en) * 2000-03-28 2008-03-12 パイオニア株式会社 Method for separating nitride semiconductor device
US7064879B1 (en) * 2000-04-07 2006-06-20 Microsoft Corporation Magnetically actuated microelectrochemical systems actuator
DE10026255A1 (en) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
DE10051465A1 (en) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Method for producing a GaN-based semiconductor component
DE20009283U1 (en) * 2000-04-26 2000-12-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component based on GaN
US6326294B1 (en) 2000-04-27 2001-12-04 Kwangju Institute Of Science And Technology Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices
JP4050444B2 (en) * 2000-05-30 2008-02-20 信越半導体株式会社 Light emitting device and manufacturing method thereof
JP4024994B2 (en) 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WO2002021604A1 (en) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
JP2002111134A (en) * 2000-09-29 2002-04-12 Toshiba Corp Semiconductor laser device
JP4091261B2 (en) * 2000-10-31 2008-05-28 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
US6518079B2 (en) * 2000-12-20 2003-02-11 Lumileds Lighting, U.S., Llc Separation method for gallium nitride devices on lattice-mismatched substrates
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
JP2002222989A (en) * 2001-01-26 2002-08-09 Toshiba Corp Semiconductor light-emitting device
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6555405B2 (en) * 2001-03-22 2003-04-29 Uni Light Technology, Inc. Method for forming a semiconductor device having a metal substrate
US7214325B2 (en) * 2001-03-23 2007-05-08 Lg Electronics Inc. Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment
US6765232B2 (en) * 2001-03-27 2004-07-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US6746889B1 (en) * 2001-03-27 2004-06-08 Emcore Corporation Optoelectronic device with improved light extraction
JP4101468B2 (en) 2001-04-09 2008-06-18 豊田合成株式会社 Method for manufacturing light emitting device
TW480752B (en) * 2001-04-09 2002-03-21 United Epitaxy Co Ltd Structure and manufacturing method for light emitting diode
KR100387242B1 (en) * 2001-05-26 2003-06-12 삼성전기주식회사 Method for fabricating semiconductor light emitting device
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
JP2003100074A (en) * 2001-09-21 2003-04-04 Seiko Epson Corp Operation control in accordance with temperature change for integrated circuit
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
TW544958B (en) * 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
US6744196B1 (en) * 2002-12-11 2004-06-01 Oriol, Inc. Thin film LED
US7033858B2 (en) * 2003-03-18 2006-04-25 Crystal Photonics, Incorporated Method for making Group III nitride devices and devices produced thereby
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
KR100483049B1 (en) 2003-06-03 2005-04-15 삼성전기주식회사 A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES
US20060175681A1 (en) * 2005-02-08 2006-08-10 Jing Li Method to grow III-nitride materials using no buffer layer
JP2007005591A (en) 2005-06-24 2007-01-11 Toshiba Corp Semiconductor light emitting device
US7329915B2 (en) * 2005-11-21 2008-02-12 Hewlett-Packard Development Company, L.P. Rectifying contact to an n-type oxide material or a substantially insulating oxide material
JP4895587B2 (en) * 2005-11-29 2012-03-14 ローム株式会社 Nitride semiconductor light emitting device
WO2008060530A1 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Ion beam treatment for the structural integrity of air-gap iii-nitride devices produced by photoelectrochemical (pec) etching
TW200840064A (en) 2007-03-30 2008-10-01 Delta Electronics Inc Solar cell
US7846751B2 (en) 2007-11-19 2010-12-07 Wang Nang Wang LED chip thermal management and fabrication methods
WO2012012554A1 (en) * 2010-07-20 2012-01-26 Deposition Sciences, Inc. High gain coatings and methods
WO2013183769A1 (en) * 2012-06-08 2013-12-12 日本電気株式会社 Lithium-ion secondary battery

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620557A (en) * 1993-12-27 1997-04-15 Toyoda Gosei Co., Ltd. Sapphireless group III nitride semiconductor and method for making same
US5929466A (en) * 1994-03-09 1999-07-27 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
US6120600A (en) * 1995-05-08 2000-09-19 Cree, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US6500689B2 (en) * 1996-11-29 2002-12-31 Toyoda Gosei Co., Ltd. Process for producing GaN related compound semiconductor
US6329216B1 (en) * 1997-05-15 2001-12-11 Rohm Co., Ltd. Method of manufacturing an AlGaInP light emitting device using auto-doping
US6335217B1 (en) * 1997-10-10 2002-01-01 Toyoda Gosei Co., Ltd. GaN type semiconductor device fabrication
US6479839B2 (en) * 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device
US6358770B2 (en) * 1998-05-29 2002-03-19 Matsushita Electric Industrial Co., Ltd. Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1502284A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000477B2 (en) 2002-04-09 2015-04-07 Lg Innotek Co., Ltd. Vertical topology light-emitting device
US9209360B2 (en) 2002-04-09 2015-12-08 Lg Innotek Co., Ltd. Vertical topology light-emitting device
US9478709B2 (en) 2002-04-09 2016-10-25 Lg Innotek Co., Ltd. Vertical topology light emitting device

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