WO2003088367A2 - Integrated active photonic device and photodetector - Google Patents
Integrated active photonic device and photodetector Download PDFInfo
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- WO2003088367A2 WO2003088367A2 PCT/GB2003/001461 GB0301461W WO03088367A2 WO 2003088367 A2 WO2003088367 A2 WO 2003088367A2 GB 0301461 W GB0301461 W GB 0301461W WO 03088367 A2 WO03088367 A2 WO 03088367A2
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- region
- contact
- bandgap
- photodetector
- substrate
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- 230000003287 optical effect Effects 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Definitions
- the present invention relates to monolithic integration of photonic devices, such as semiconductor lasers and optical amplifiers, with photodetectors.
- Photonic devices such as semiconductor lasers, optical modulators and optical amplifiers are widely used in modern telecorrrmunication systems. It is desirable to monitor the optical output of such photonic devices on chip. This is especially desirable when multiple devices are integrated onto one chip, and more than one optical device has to be monitored.
- the gain of a laser or amplifier can be affected by a number of factors, including: i) environmental effects, such as temperature, humidity, changes in wavelength and polarisation etc; ii) device degradation, due to crystalline defects, deterioration of contacts, etc; and iii) misalignment of optical coupling elements due to shock, strain, etc.
- a photodetector can be positioned at the back facet of the laser.
- the facets of a semiconductor laser are typically coated with a highly reflective (HR) coating, having a reflection coefficient, R, of up to ⁇ 95% on the back facet and an anti-reflection (AR) coating with R ⁇ 5% on the front facet.
- HR highly reflective
- AR anti-reflection
- the photodetector can measure the light escaping from the back facet (R ⁇ 95%) and hence monitor the device.
- US 5,134,671 describes a monolithic integrated optical amplifier and photodetector.
- the optical amplifier and photodetector are integrated on the same substrate, the photodetector being optically coupled to the optical amplifier via a branching waveguide having low radiative loss and low back reflectivity. This is achieved with a difficult manufacturing process to form the Y-shaped waveguide with a branch of the waveguide having a gradual decrease in the effective refractive index such as to decrease the difference between the refractive indices at the optical interface of the truncated wedge tip to avoid optical coupling of the amplifier.
- the disadvantage with the process described is that four growth steps are required to construct the device, including an overgrowth to deposit the passive waveguide region.
- the different growth steps considerably increase the device fabrication difficulty, hence reduce yields and increase costs.
- the present invention provides an active photonic device and photodetector integrated on a single substrate, the photodetector adapted for monitoring an output of the active device, comprising: a semiconductor substrate; an optically active region formed on the substrate including a first electrical contact thereon for initiating emission of photons and/or modulation of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons.
- the present invention provides an active photonic device and photodetector integrated on a single substrate, the photodetector adapted for monitoring an output of the active device, comprising: a semiconductor substrate; an optically active region formed on the substrate including a first electrical contact thereon; a non-branching optical confinement structure generally defining an optical path through the device and through said optically active region; a photodetector structure formed on the substrate including a second electrical contact displaced from and electrically insulated from the first contact for receiving carriers generated by photons in the optically active region.
- the present invention provides an active photonic device and characterisation contact integrated on a single substrate, the characterisation contact for enabling detection of a degree of bandgap shift in the device, comprising: a semiconductor substrate; an optically active region formed on the substrate and comprising a semiconductor medium having a first bandgap, and including a first electrical contact thereon for initiating emission of photons and/or modulation of photons within the optically active region; a bandgap shifted region formed on the substrate and comprising a semiconductor medium having a second bandgap shifted from said first bandgap; a characterisation contact formed on the substrate, displaced from and substantially electrically insulated from the first electrical contact, at least a part of the characterisation contact overlying the bandgap shifted region.
- the present invention provides a method of determining a degree of bandgap shift introduced between a first region of semiconductor medium and a second region of semiconductor medium, comprising the steps of: forming a photonic device on a substrate, including a first region in which the semiconductor medium has a first bandgap, and a second region in which the semiconductor medium has a second bandgap shifted from said first bandgap; depositing a first contact in said first region for operating said photonic device; depositing a second contact at least partially overlying said second region; and electrically biassing said second contact to generate an electroluminescence signal in the semiconductor medium indicative of the magnitude of at least said second bandgap.
- the present invention provides a method of determining a degree of bandgap shift introduced between a first region of semiconductor medium and a second region of semiconductor medium, comprising the steps of: forming a photonic device on a substrate, including a first region in which the semiconductor medium has a first bandgap, and a second region in which the semiconductor medium has a second bandgap shifted from said first bandgap; depositing a first contact in said first region for operating said photonic device; depositing a second contact at least partially overlying said second region; and optically stimulating said second region to generate electroluminescence in the semiconductor medium; electrically biassing said second contact so as to draw a photodetection current indicative of the magnitude of at least said second bandgap.
- active photonic device is intended to encompass all optically active semiconductor devices deploying electrical charge injection techniques to generate photons or to modulate photons in an optically active region of the semiconductor.
- the invention is particularly suited for monolithic integration of multiple optical devices on a single chip for telecommunication applications.
- the invention can be applied to the monitoring of any active photonic device as defined above, including lasers, amplifiers and light emitting diodes.
- the devices may be formed in any suitable semiconducting medium, particularly III-V and II-VI material systems.
- Figure 1 shows a schematic transverse cross section of a laser device having a photodetector contact positioned laterally adjacent to an optical confinement structure of the laser device
- Figure 2a shows a schematic top view of the laser device of figure 1, in which the photodetector contact partially overlies a bandgap shifted region
- Figure 2b shows a schematic top view of a laser device in which the photodetector contact is positioned within the optical confinement structure and partially overlying the bandgap shifted region
- Figure 2c shows a schematic top view of the laser device similar to figure 2b, but with the photodetector contact positioned at the highly reflective coating end of the device;
- Figure 2d shows a schematic top view of the laser device similar to figure 2a, but with the photodetector contact positioned at the highly reflective coating end of the device;
- Figure 2e shows a schematic top view of the laser device similar to figure 2b, but with the photodetector contacts positioned entirely within the bandgap shifted regions
- Figure 2f shows a schematic top view of the laser device similar to figure 2e, but with the photodetector contacts positioned entirely outside the bandgap shifted regions;
- Figure 3 a shows a schematic diagram of the band gap at the facet end of the device of figure 1; and Figure 3b shows a schematic diagram of the band gap at the facet end of the device of figure 1, with the photodetector operating in forward bias mode.
- the present invention provides for monolithic integration of an active photonic device such as a semiconductor laser or optical amplifier and a photodetector device.
- the invention describes a simple monolithic solution to monitor, and hence enable control of, the output power of a semiconductor laser diode.
- the invention is particularly advantageous for large scale integration of multiple lasers or optical amplifiers on chip.
- a semiconductor laser 10 comprises an optically active region 11, including a waveguide portion 16 extending therethrough.
- the optically active region 11 provides a semiconductor medium having a suitable band gap, in which carriers may be injected to create photons or modulate photon behaviour when operating in forward bias mode, using techniques well known in the art.
- Optically passive regions 12, 15, having an increased band gap, are formed at each end of the waveguide portion 16, preferably using quantum well intermixing techniques, although any suitable method of locally increasing the bandgap is also acceptable.
- the intermixed regions 12, 15 (or, more generally, the bandgap shifted regions) define non-absorbing mirrors (NAMs).
- NAMs non-absorbing mirrors
- the NAM 12 is provided with an anti-reflective (AR) coating 13
- the NAM 15 is provided with a high reflectivity (HR) coating 14.
- AR anti-reflective
- HR high reflectivity
- a typical semiconductor laser diode is fabricated by etching the waveguide portion 16, using conventional processing techniques, as a ridge 18.
- the ridge is typically between 1 and 2 ⁇ m in height and width and of the order of 1000 ⁇ m in length.
- the ridge contains the major part of the optical field distribution 1 and substantially confines the electrical injection current 2 and 3.
- the principles of the invention can be applied in the context of any suitable optical confinement structure in a semiconductor medium, including buried heterostructures.
- a p-type contact 21 is deposited on top of the ridge 18 to facilitate the current injection into the device 10.
- An n-type contact 5 is provided on the bottom of the device on or in the substrate.
- the body of the device is formed in conventional manner with an intrinsic optically active layer 7 generally confined by respective p- and n-type optically conducting layers 4 and 6.
- the p-type optically conducting layer 4 is typically of the order of 200 nm thick. Current is injected across the contacts 21 and 5; electrons and holes recombine in the optically active layer 7 to create photons.
- the ridge 18 constrains the optical mode of the device.
- the geometry of the p-type contact 21 and ridge effectively determine the lateral extent of a principal optical pathway 23 that passes through the device 10 between the facets at coatings 13 and 14.
- the expression principal optical pathway is used to indicate the pathway through the semiconductor medium in which the substantial part of the optical field distribution 1 passes, and will be determined by, though not necessarily coextensive with, the optical confinement structure. This is due to the fact that significant leakage of the optical field 1 occurs out of the ridge waveguide 18 as shown in figure 1.
- the optical confinement structure, and thus the principal optical pathway 23 is substantially linear, as shown in the figures. Still more preferably, the optical confinement structure, and thus the principal optical pathway, is non-branching.
- the optical confinement structure may provide for a single optical mode of operation.
- a further p-type contact 22 is deposited laterally separated from the ridge contact, to provide a photodetector contact.
- this further p-type contact 22 is deposited at the same time as the laser p-type ridge contact 21.
- the photodetector comprises a photodiode, and this photodiode contact 22 is located sufficiently close to the ridge contact 21 that there is overlap with the optical field generated by the active region of the laser. However, the photodiode contact is located sufficiently far from the ridge contact to limit current spreading of the injection current 2 (see figure 1). Thus, the photodetector contact is positioned such that it at least partially overlies a small part of the principal optical pathway through the device, but is laterally separated from the optical confinement structure, eg. ridge 18.
- the relative position of the contacts 21 and 22 is such as to ensure that the optically active device and the photodetector: (a) are sufficiently far apart that there is no serious electrical cross-talk between devices; (b) are sufficiently close together that there is enough light to generate a photocurrent and hence signal in the photodiode; and (c) do not seriously interfere to compromise the performance of the optically active device, for example by way of optical feedback into a laser.
- the lateral separation distance of the contacts 21 and 22 is of the order of 10 ⁇ m.
- the photodiode is preferably also positioned at least partly over the passive (bandgap shifted) region 12 and the active region 11, and close to the laser output facet 13 as best seen in figure 2a.
- the photodiode contact 20 is shown in figure 2a at the optical output end of the laser (ie. adjacent to the AR coating 13 of the NAM 12), the photodetector 20 can also be located adjacent to the HR coating 14 of the NAM 15, as shown in figure 2d.
- photodetector 30 With reference to figure 2b, an alternative configuration of photodetector 30 is shown.
- the contact 31 for the photodiode 30 is located directly on top of the ridge 18 in longitudinal alignment with, but spaced from, the ridge contact 21.
- the photodiode contact 31 is shown in figure 2b at the optical output end of the laser (ie. adjacent to the AR coating 13 of the NAM 12), the photodetector contact 35 can also be located adjacent to the HR coating 14 of the NAM 15, as shown in figure 2c.
- the photodetector can be provided in similar manner in an optical amplifier in which both ends of the device 10 are provided with an AR coating.
- the photodetector contact 22, 40 is shown laterally offset from the ridge 18. As best viewed in figure 1, the contact is positioned to overlap the 'tail' of the optical field distribution, but sufficiently far away from the current injection 2 into the active region to avoid significant interference therewith, as previously described.
- the photo detectors 20, 30, 35, 40 are weakly coupled to the active regions 16 of the lasers such that a very small proportion of the optical radiation from the laser active region can be monitored without deleteriously affecting the performance of the laser.
- the ridge contact 21 will supply an injection current in the region of several hundreds of microamps whereas the photodetector contact 22 will only need to draw a detection current in the region of picoamps to nanoamps, ie. a current approximately of the order of 10 4 - 10 8 times smaller.
- the photodiode contact 20 is driven in reverse bias mode such that photons from the 'tail' of the optical field 1 can generate carriers in the band and hence create a photocurrent which can be measured.
- the relative power that is 'tapped' out, which determines the responsivity of the detector, can easily be controlled by the distance between the photodiode and ridge.
- the advantage of measuring the photocurrent by this method is that there is effectively no loss to 'tap-off optical power and there is no optical coupling mechanism between the laser 10 and the detector 20 that can create an additional cavity effect that could have a deleterious effect on the optical performance of the laser.
- the reflectivity of this facet may be increased from the conventional figure of R ⁇ 95% to a maximum value of R > 99.9%. An increase in output power of the device of ⁇ 5% is therefore possible.
- the photodiode contact 22, 40 has been placed off-set to the side of the ridge, towards the AR coating of the device, or towards the HR coating 14 of the device.
- the photodetector contact 31, 35, 50, 51, 60, 61 is placed on the optical confinement structure (eg. ridge 18) but longitudinally separated from the ridge contact to a sufficient distance to ensure adequate electrical isolation therefrom.
- the operation of the photodetector in reverse bias mode is similar to that previously described in connection with figures 2a and 2d, although the photodetector of course is positioned at or close to the peak of the optical field distribution 1 in the principal optical path.
- the photodetector contact is positioned straddling the bandgap shifted region 12 and the non-shifted region 11. This enables the photodetector contact 22, 31, 35 to be used to inject carriers (using a forward bias mode of operation) into the bandgap shifted / non-shifted regions of the device to monitor the effectiveness of the intermixing process used to create the bandgap shift.
- This EL signature can provide an in-situ characterisation technique to measure the size of the intermixed regions during the manufacturing process.
- Figure 3a shows a schematic of the band-gap of the facet ends of the device of figures 2a to 2f.
- the photodiode contact 22, 31, 36 or 40 is located overlapping the bandgap shifted (intermixed) region 12 or 15 and the non- shifted region 11 of the device 10 in a passive section of the device spaced apart from the active region contact 21.
- Photons generated in the optically active region 11 of the device cause corresponding electron and hole currents 32, 33 that can be measured by the photodetector 20, 30.
- the photodiode contact 22, 31 or 36 is shown driven in forward bias mode to create carrier current 37, 38 to generate electroluminescence in the bandgap shifted / non-shifted regions of the device.
- an electrical current is injected to generate an electroluminescence signal.
- an external optical source can be used to stimulate emission of photons of different wavelengths from the bandgap shifted / non-shifted regions.
- the photodetector contact can then be operated in reverse bias mode, again to detect photocurrents corresponding to each of the bandgap shifted and non-shifted regions in order to determine a degree of quantum well intermixing during the fabrication process.
- this optical stimulation and reverse bias photodetection mode of operation can be effected on an uncleaved wafer and therefore provide for characterisation of the QWI manufacturing process for each laser device fabricated on the wafer.
- the photodetector contact 60, 61 has been placed wholly within the optically active region 11, on the ridge either at the AR coating end, or the HR coating end, or both.
- the photodetector contact for use in the reverse bias photodiode mode, the photodetector contact must be positioned sufficiently far from the ridge contact to achieve adequate electrical isolation.
- electrical isolation may be particularly effected by inclusion of an electrical isolation structure in the semiconductor medium between the two contacts 21 and 60 or 21 and 61.
- adequate electrical isolation is assured by the bandgap shifted region in which the photodetector contact 50 or 51 resides.
- the p-type metallisation of the ridge contact 18 and adjacent photodetector contact 22, 31, 36, 40, 50, 60 etc can be deposited simultaneously to improve the manufacturability of the device.
- the exact configuration and location of the active photonic device with respect to the photodiode is dependent on the particular application. For example, a higher power laser diode would require a photodiode with the same level of detectivity as for a low power laser and thus can be positioned further away from the laser.
- the responsivity of the detector can be of the order of O.lmA/mW or less.
- the responsivity of the detector can be changed by varying the distance from the optical source. If the distance between the active photonic device and photodetector is short such that electrical cross-talk could occur, then electrical isolation can be obtained by using conventional isolation techniques, such as a shallow etch and/or ion implantation.
- the diode contact is deposited adjacent to (and preferably at the same time as) the p-type ridge contact 18. Thus, there need be no additional processing steps than used in making a laser or amplifier.
- the photodetector 20 can be fully integrated with multiple laser devices on the same chip.
- the device can operate as a photodiode to monitor the optical power on the back facet and / or the front facet.
- the device can monitor the effectiveness of the NAM by operating in reverse bias.
- the EL emission measurement can determine the band-gap shift.
- the back reflector can have a reflectivity value of up to 99.9%. Therefore the forward output power can be increased by approximately 5% over devices which position a photodetector behind the back facet. 9) The photodetector does not significantly influence the performance of the active photonic device.
- the preferred implementation of the photodetector described above is in conjunction with an active device having an optical confinement structure for operating in a single optical mode of operation, the principles can also be applied to multimode devices, optical amplifiers and light emitting diodes.
Abstract
Description
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003585190A JP4564755B2 (en) | 2002-04-10 | 2003-04-03 | Integrated active optical device and photodetector |
EP03718927A EP1493191A2 (en) | 2002-04-10 | 2003-04-03 | Integrated active photonic device and photodetector |
US10/510,802 US7251407B2 (en) | 2002-04-10 | 2003-04-03 | Integrated active photonic device and photodetector |
AU2003222962A AU2003222962A1 (en) | 2002-04-10 | 2003-04-03 | Integrated active photonic device and photodetector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0208211A GB2387481B (en) | 2002-04-10 | 2002-04-10 | Integrated active photonic device and photodetector |
GB0208211.3 | 2002-04-10 |
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WO2003088367A2 true WO2003088367A2 (en) | 2003-10-23 |
WO2003088367A3 WO2003088367A3 (en) | 2004-05-27 |
WO2003088367A8 WO2003088367A8 (en) | 2005-01-13 |
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PCT/GB2003/001461 WO2003088367A2 (en) | 2002-04-10 | 2003-04-03 | Integrated active photonic device and photodetector |
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US (1) | US7251407B2 (en) |
EP (1) | EP1493191A2 (en) |
JP (1) | JP4564755B2 (en) |
GB (1) | GB2387481B (en) |
WO (1) | WO2003088367A2 (en) |
Cited By (2)
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WO2013026655A1 (en) * | 2011-08-25 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Radiation‑emitting semiconductor component |
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GB2387481B (en) | 2002-04-10 | 2005-08-31 | Intense Photonics Ltd | Integrated active photonic device and photodetector |
JP4411540B2 (en) * | 2005-09-15 | 2010-02-10 | ソニー株式会社 | Semiconductor laser device |
JP4352337B2 (en) * | 2005-09-16 | 2009-10-28 | ソニー株式会社 | Semiconductor laser and semiconductor laser device |
US7343061B2 (en) * | 2005-11-15 | 2008-03-11 | The Trustees Of Princeton University | Integrated photonic amplifier and detector |
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US7826693B2 (en) | 2006-10-26 | 2010-11-02 | The Trustees Of Princeton University | Monolithically integrated reconfigurable optical add-drop multiplexer |
DE102007026925A1 (en) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Integrated trapezoidal laser arrangement, particularly integrated optical arrangement, has injector area and optical area expanded in injector area, which is coupled in cross section |
US8916873B2 (en) | 2011-09-14 | 2014-12-23 | Infineon Technologies Ag | Photodetector with controllable spectral response |
US8975715B2 (en) * | 2011-09-14 | 2015-03-10 | Infineon Technologies Ag | Photodetector and method for manufacturing the same |
DE102012103549B4 (en) * | 2012-04-23 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Semiconductor laser light source with an edge-emitting semiconductor body and light-scattering partial area |
JP2014236161A (en) * | 2013-06-04 | 2014-12-15 | 古河電気工業株式会社 | Semiconductor optical element, method for manufacturing the same, and integrated semiconductor optical element |
EP3573103B1 (en) * | 2017-02-03 | 2021-01-06 | Huawei Technologies Co., Ltd. | Photoelectric conversion apparatus |
US11075503B2 (en) * | 2019-07-02 | 2021-07-27 | Microsoft Technology Licensing, Llc | Integrated inter-cavity photodetector for laser power and threshold estimation |
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WO2001088993A2 (en) * | 2000-05-19 | 2001-11-22 | Mcmaster University | A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES |
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- 2003-04-03 JP JP2003585190A patent/JP4564755B2/en not_active Expired - Fee Related
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Cited By (3)
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CN100544141C (en) * | 2005-03-17 | 2009-09-23 | 中国科学院半导体研究所 | The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide |
WO2013026655A1 (en) * | 2011-08-25 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Radiation‑emitting semiconductor component |
US9151893B2 (en) | 2011-08-25 | 2015-10-06 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with a waveguide meeting a mirror surface perpendicularly and meeting a coupling-out surface obliquely |
Also Published As
Publication number | Publication date |
---|---|
WO2003088367A3 (en) | 2004-05-27 |
US20050230722A1 (en) | 2005-10-20 |
GB2387481A (en) | 2003-10-15 |
JP2005522885A (en) | 2005-07-28 |
GB0208211D0 (en) | 2002-05-22 |
JP4564755B2 (en) | 2010-10-20 |
GB2387481B (en) | 2005-08-31 |
WO2003088367A8 (en) | 2005-01-13 |
EP1493191A2 (en) | 2005-01-05 |
US7251407B2 (en) | 2007-07-31 |
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