WO2003090278A2 - Dual-sided heat removal system - Google Patents

Dual-sided heat removal system Download PDF

Info

Publication number
WO2003090278A2
WO2003090278A2 PCT/US2003/009681 US0309681W WO03090278A2 WO 2003090278 A2 WO2003090278 A2 WO 2003090278A2 US 0309681 W US0309681 W US 0309681W WO 03090278 A2 WO03090278 A2 WO 03090278A2
Authority
WO
WIPO (PCT)
Prior art keywords
inteφoser
microelectronic device
substrate
accordance
heat
Prior art date
Application number
PCT/US2003/009681
Other languages
French (fr)
Other versions
WO2003090278A3 (en
Inventor
Gilroy Vandentop
Chia-Pin Chiu
Rajendran Nair
Yian-Liang Li
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Priority to EP03726148A priority Critical patent/EP1497860A2/en
Priority to AU2003228399A priority patent/AU2003228399A1/en
Publication of WO2003090278A2 publication Critical patent/WO2003090278A2/en
Publication of WO2003090278A3 publication Critical patent/WO2003090278A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0204Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/405Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4056Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to additional heatsink
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4093Snap-on arrangements, e.g. clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/141Analog devices
    • H01L2924/1427Voltage regulator [VR]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1433Application-specific integrated circuit [ASIC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09054Raised area or protrusion of metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10378Interposers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10409Screws
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10439Position of a single component
    • H05K2201/10477Inverted
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15Position of the PCB during processing
    • H05K2203/1572Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides

Definitions

  • the present invention relates to heat removal in a computer system.
  • the present invention relates to dual-sided heat sinks for
  • microelectronic devices mounted parallel to a substrate.
  • ASICs application specific integrated circuits
  • chipsets and the like.
  • microelectronic device is used in the singular, it is also intended to
  • microelectronic device is mounted on a substrate which facilitates the distribution of electrical signals, as well as power and ground, between the microelectronic
  • the substrates are often not made
  • substrates include organic land grid arrays (OLGAs), plastic land grid arrays
  • PLGAs printed circuit boards
  • PCBs printed circuit boards
  • the device while eliminating the large thermal barrier of the substrate.
  • Figure 1 depicts a cross section through a microelectronic device
  • heat sink mounted on a substrate using a socket connection.
  • Figure 2 depicts a microelectronic device and heat sink mounted on a
  • Figure 3 shows a microelectronic device and interposer mounted on a
  • Figure 4 shows another dual heat sink assembly in accordance with
  • Figure 5 shows a third dual heat sink assembly in accordance with an
  • the present invention allows double-sided heat sinks in systems with
  • microprocessors mounted parallel to the substrate, allowing up to twice the heat
  • Figure 1 depicts a
  • microelectronic device 4 to substrate 6 is common. Given the relatively poor
  • heat sink 12 The design of heat sinks such as heat sink 12 is known to
  • the present invention uses an interposer device, discussed further
  • microelectronic device 4 is the use of an interposer between microelectronic device 4 and substrate 6.
  • interposer will be used in the
  • socket 8 in Figure 1 is one form of interposer.
  • interposer will preferably have high thermal
  • inte ⁇ oser as is broadly defined, be used with the present invention. With that in
  • socket 8 has been common practice for many years. However, socket 8 is traditionally just
  • microelectronic devices 4 became apparent. For example, IR drops in high current
  • power signals supplied to the processor is providing an inte ⁇ oser, coupled directly
  • microelectronic device 4 containing a voltage regulation (NR) system.
  • NR voltage regulation
  • Figure 2 illustrates one arrangement with a thin inte ⁇ oser 16
  • microelectronic device 4 mounted between microelectronic device 4 and substrate 6, and heat sink 12.
  • microelectronic device 4 and inte ⁇ oser 16 are shown in Figure 2 as
  • the present invention exploits the ability of inte ⁇ oser 16 to distribute
  • Figure 3 shows an embodiment of the present
  • Heat sinks 12 and 18 may be similar, or they may use different materials and/or configurations. Inte ⁇ oser 16 by providing a path for electrical signals
  • microelectronic device 4 between microelectronic device 4 and substrate 6, as well as to providing
  • inventions may use inte ⁇ oser 16 to solve both the "power problem" and the
  • FIG. 4 illustrates another embodiment of the present invention
  • microelectronic device 4 mounted below inte ⁇ oser 16, and through opening 20 in
  • substrate 6 with two heat sinks, 12 and 18, on opposite sides of substrate 6.
  • electrical connections 22 between substrate 6 and inte ⁇ oser 16 are preferably gold
  • sinks 12 and 18 in contact with microelectronic device 4 and inte ⁇ oser 16 are
  • TIM such as a polymer-based, solder-based, or diamond paste.
  • TIMs are polymer-based, solder-based, or diamond paste.
  • FIG. 4 is only one of many possible arrangements of microelectronic device 4
  • inte ⁇ oser 16 is not intended to be limited to aiding in voltage regulation and mechanically bridging opening 20.
  • Other embodiments of inte ⁇ oser 16 are not intended to be limited to aiding in voltage regulation and mechanically bridging opening 20.
  • the present invention might also inco ⁇ orate memory devices, optical signal
  • Figure 5 shows an embodiment of the present invention in which
  • inte ⁇ oser 16 contact power and I/O signals within inte ⁇ oser 16 and between sets
  • connections 22 and 24 The relative sizes of microelectronic device 4, and dies
  • present invention not only provides a thermal path for the heat load from inte ⁇ oser
  • This second heat transfer path may

Abstract

The present invention describes a method and apparatus for mounting a microelectronic device parallel to a substrate with an interposer and two heat sinks, one on each side of the substrate.

Description

DUAL-SIDED HEAT REMOVAL SYSTEM
Related Applications
[0001] This application is related to Serial No. 10/026,145, filed on
December 21, 2001.
Field of the Invention
[0002] The present invention relates to heat removal in a computer system.
More particularly, the present invention relates to dual-sided heat sinks for
microelectronic devices mounted parallel to a substrate.
Background of the Invention
[0003] As the speed and component density of modern microelectronic
devices continues to increase, the heat generated by them also generally increases.
Techniques for better dissipating the heat from microelectronic devices are thus
desirable, especially with higher performance devices. The term microelectronic
device, as used in this disclosure, is intended to be broad and include, but not be
limited to, electronic and opto-electronic devices such as microprocessors,
application specific integrated circuits (ASICs), chipsets, and the like. Although for
clarity, the term microelectronic device is used in the singular, it is also intended to
include a plurality of individual devices.
[0004] In virtually all systems using electronic components, the
microelectronic device is mounted on a substrate which facilitates the distribution of electrical signals, as well as power and ground, between the microelectronic
device and other system components. However, the substrates are often not made
of material that is a particularly good thermal conductor. Examples of such
substrates include organic land grid arrays (OLGAs), plastic land grid arrays
(PLGAs), and printed circuit boards (PCBs). The present invention is not, however,
intended to be limited to embodiments using any particular substrate material or
device mounting configuration.
[0005] It would be desirable to be able to provide cooling on both sides of
the device while eliminating the large thermal barrier of the substrate.
Brief Description of the Drawings
[0006] Figure 1 depicts a cross section through a microelectronic device and
heat sink mounted on a substrate using a socket connection.
[0007] Figure 2 depicts a microelectronic device and heat sink mounted on a
substrate using an interposer.
[0008] Figure 3 shows a microelectronic device and interposer mounted on a
substrate with two heat sinks in accordance with an embodiment of the present
invention.
[0009] Figure 4 shows another dual heat sink assembly in accordance with
an embodiment of the present invention.
[0010] Figure 5 shows a third dual heat sink assembly in accordance with an
embodiment of the present invention.
Detailed Description
[0011] The present invention allows double-sided heat sinks in systems with
microprocessors mounted parallel to the substrate, allowing up to twice the heat
dissipation of the prior art. Substrates are often poor thermal conductors so, heat
cannot easily be dissipated in the direction of the substrate. Figure 1 depicts a
cross section of one configuration 2 used to mount a microelectronic device 4 on a
substrate 6. Use of a socket 8 to electrically and mechanically couple
microelectronic device 4 to substrate 6 is common. Given the relatively poor
thermal conductivity of substrate 6, one can easily see that most of the heat
generated in configuration 2 by microelectronic device 10 will be dissipated
through heat sink 12. The design of heat sinks such as heat sink 12 is known to
those of ordinary skill in the art, and the present invention is not intended to be
limited to any particular heat sink design details such as, but not limited to, the
material or geometry used for the heat sink.
[0012] The present invention uses an interposer device, discussed further
below, for mounting the microelectronic device, with an opening in the substrate
that allows a second heat sink to be included on the substrate side of the
microelectronic device.
[0013] A recent development in the art of mounting microelectronic devices
is the use of an interposer between microelectronic device 4 and substrate 6. For
the purposes of the present disclosure the term interposer will be used in the
broadest sense: a device interposed, or located between microelectronic device 4 and substrate 6. In this sense, socket 8 in Figure 1 is one form of interposer. For
use with the present invention the interposer will preferably have high thermal
conductivity, for reasons that will be explained below. Note that for purposes of the
present invention, the internal design details of the particular interposer are not
important. Furthermore, the present invention is not intended to be limited to use
with any particular inteφoser design, providing it is thermally conductive. Neither
is the design of the inteφoser the subject of the present invention, only that an
inteφoser, as is broadly defined, be used with the present invention. With that in
mind, the present disclosure will functionally describe a few of the many possible
inteφoser designs to better appreciate the context of the present invention, and in
no way intends to limit the scope of the invention to use with the described
inteφosers.
[0014] Connecting a microelectronic device 4 and a substrate 6 using socket
8 has been common practice for many years. However, socket 8 is traditionally just
a means of mechanical and electrical connection, it is not a component in which the
electrical signals or power were processed or transformed, but rather one where
signals are "passed through." As microelectronic devices 4 progressed in terms of
speed and general processing power, while operating at lower voltages, the need to
better control the quality of power as well as input and output (I/O) signals of
microelectronic devices 4 became apparent. For example, IR drops in high current
Figure imgf000006_0001
and low voltage situations, particularly in the context of high signals, are dT
undesirable and degrade processor performance. Prior art solutions to such "power problems" often used techniques such as land side capacitors located directly on
substrate 6 for power decoupling.
[0015] One solution to the power which will improve the quality of the
power signals supplied to the processor is providing an inteφoser, coupled directly
to microelectronic device 4, containing a voltage regulation (NR) system. In this
way, relatively high voltages can be supplied to the inteφoser device, which is
immediately adjacent to the processor, and the voltage is reduced within the
inteφoser and distributed to microelectronic device 4.
[0016] Figure 2 illustrates one arrangement with a thin inteφoser 16
mounted between microelectronic device 4 and substrate 6, and heat sink 12.
Although microelectronic device 4 and inteφoser 16 are shown in Figure 2 as
being approximately the same size, there is no requirement that they be so. Signals
travelling between substrate 6 and microelectronic device 4 might be routed within
the plane of inteφoser 16, or "horizontally" in Figure 2, such as to or from the NR
system as well as "vertically" through vias in inteφoser 16.
[0017] The present invention exploits the ability of inteφoser 16 to distribute
electrical signals within its plane, and allows an opening in subtrate 6 which may
also facilitate a second heat sink. Figure 3 shows an embodiment of the present
invention with a second heat sink 18 mounted through an opening 20 in substrate 6.
In this embodiment there are two major heat transfer paths to two heat sinks, 12
and 18, significantly increasing the ability to dissipate heat from microelectronic
device 4. Heat sinks 12 and 18 may be similar, or they may use different materials and/or configurations. Inteφoser 16 by providing a path for electrical signals
between microelectronic device 4 and substrate 6, as well as to providing
mechanical support for microelectronic device 4, allows opening 20 to be created in
substrate 6 for the second heat transfer path through substrate 6. Thus, the present
invention may use inteφoser 16 to solve both the "power problem" and the
"thermal problem."
[0018] Figure 4 illustrates another embodiment of the present invention with
microelectronic device 4 mounted below inteφoser 16, and through opening 20 in
substrate 6, with two heat sinks, 12 and 18, on opposite sides of substrate 6. The
electrical connections 22 between substrate 6 and inteφoser 16 are preferably gold
plated copper pads, with copper to copper connections 24 between microelectronic
device 4 and inteφoser 16. The use of spring plates 26 and connecting rods 28 in
this embodiment allow for a socket-less pressure mated assembly of the
components, while providing secure electrical connections. The surfaces of heat
sinks 12 and 18 in contact with microelectronic device 4 and inteφoser 16 are
preferably prepared with a highly thermally conductive thermal interface material
(TIM) such as a polymer-based, solder-based, or diamond paste. Such TIMs are
known to those of ordinary skill in the art. Note that the embodiment shown in
Figure 4 is only one of many possible arrangements of microelectronic device 4
and inteφoser 16 which permits heat sinks on both sides of substrate 6, and the
present invention is not intended to be limited to any particular design details.
[0019] The design of inteφoser 16 is not intended to be limited to aiding in voltage regulation and mechanically bridging opening 20. Other embodiments of
the present invention might also incoφorate memory devices, optical signal
propagation devices, as well as components such as capacitors and inductors within
inteφoser 16. Figure 5 shows an embodiment of the present invention in which
two silicon dice, 30 and 32, are embedded within inteφoser 16. Embedded dice 30
and 32 are preferably surrounded by, and held in place by, encapsulation material
34 within a core 38. Build up layers 36 on the microelectronic device 4 side of
inteφoser 16 contact power and I/O signals within inteφoser 16 and between sets
of connections 22 and 24. The relative sizes of microelectronic device 4, and dies
30 and 32 embedded in the inteφoser may vary and can be selected to optimize
both the electrical and thermal performance of inteφoser 16. Figure 5 is shown
with two different configurations of contacts 22 between substrate 6 and inteφoser
16, pins and contact pads, to illustrate two of the many possible ways of electrically
coupling the two components. However, the present invention is not intended to be
limited to any particular electrical connection, or any other design detail, except as
limited by the terms of claims.
[0020] Unlike an inactive socket 8, an inteφoser 16 with active components
generates heat, although, typically much less than is generated by microelectronic
device 4. The thermal solution provided by the dual heat sinks (12 and 18) of the
present invention not only provides a thermal path for the heat load from inteφoser
16, but also typically dissipates a portion of the heat from microelectronic device 4
through inteφoser 16 to the second heat sink. Tests using thermal loads of 120 watts and 30 watts for microelectronic device 4 and inteφoser 16, respectively,
show that about 40% of the heat from microelectronic device 4 is dissipated
through the heat sink attached to inteφoser 16. This second heat transfer path may
significantly reduce the operating temperature of both microelectronic device 4 and
inteφoser 16, thereby increasing the performance of both.
[0021] Although the above disclosure provides various embodiments and
examples of the present invention for the puφoses of illustration, these
embodiments and examples are not intended to be an exhaustive list of all possible
implementations of the present invention and should not be construed in limiting
the present invention. Those of ordinary skill in the art should recognize, with the
benefit of the present disclosure, that the present invention may be practiced with
many modifications and variations to the specific details of the present disclosure.
Similarly, not all the specific details, well-known structures, devices, and
techniques that are known to those of ordinary skill in the art have been shown in
order to avoid observing the present invention. The present invention is, however,
intended to cover a broad range of techniques, devices, and well-known structures.
The invention, therefore, is intended to be limited in scope only by the purview of
the appended claims.

Claims

What is Claimed is:
1. In an assembly with a microelectronic device mounted parallel to a substrate,
a dual-sided heat removal apparatus, comprising:
an inteφoser electrically coupled to both the microelectronic device and the
substrate for passing electrical signals between the microelectronic device and the
substrate;
a first heat sink thermally coupled to the microelectronic device and
extending through an opening in the substrate for dissipating heat; and
a second heat sink thermally coupled to said inteφoser for dissipating heat.
2. An apparatus in accordance with claim 1, wherein:
at least one of said first and second heat sinks are made substantially of
aluminum.
3. An apparatus in accordance with claim 1, wherein:
at least one of said first and second heat sinks are made substantially from
copper.
4. An apparatus in accordance with claim 1, wherein:
at least one of said first and second heat sinks are made substantially from an
aluminum-copper composite.
5. An apparatus in accordance with claim 1, wherein:
said first and second heat sinks are made substantially from a thermally
conductive composite material.
6. An apparatus in accordance with claim 1, wherein:
said inteφoser includes a voltage regulation (NR) system.
7. An apparatus in accordance with claim 1, wherein:
said inteφoser includes memory.
8. An apparatus in accordance with claim 1, wherein:
said inteφoser includes an optical signaling system.
9. An apparatus in accordance with claim 1, wherein:
said inteφoser and said microelectronic device are coupled by a socket-less
electrical connection.
10. An apparatus in accordance with claim 9, wherein:
said inteφoser and said substrate are coupled by a socket-less electrical
connection.
11. An apparatus in accordance with claim 1, wherein: said inteφoser contains electrically active components.
12. In an assembly with a microelectronic device mounted parallel to a substrate,
a dual sided heat removal apparatus, comprising:
an inteφoser electrically coupled to both the microelectronic device and the
substrate for passing electrical signals between the microelectronic device and the
substrate;
a first heat sink thermally coupled to said inteφoser and extending through
an opening in the substrate for dissipating heat; and
a second heat sink thermally coupled to the microelectronic device for
dissipating heat.
13. An apparatus in accordance with claim 12, wherein:
at least one of said first and second heat sinks are made substantially of
aluminum.
14. An apparatus in accordance with claim 12, wherein:
at least one of said first and second heat sinks are made substantially from
copper.
15. An apparatus in accordance with claim 12, wherein:
at least one of said first and second heat sinks are made substantially from an aluminum-copper composite.
16. An apparatus in accordance with claim 12, wherein:
said first and second heat sinks are made substantially from a thermally
conductive composite material.
17. An apparatus in accordance with claim 12, wherein:
said inteφoser includes a voltage regulation (VR) system.
18. An apparatus in accordance with claim 12, wherein:
said inteφoser includes memory.
19. An apparatus in accordance with claim 12, wherein:
said inteφoser includes an optical signaling system.
20. An apparatus in accordance with claim 12, wherein:
said inteφoser and the microelectronic device are coupled by a socket-less
electrical connection.
21. An apparatus in accordance with claim 20, wherein:
said inteφoser and said substrate are coupled by a socket-less electrical
connection.
22. An apparatus in accordance with claim 12, wherein:
said inteφoser contains electrically active components.
23. An apparatus for dissipating heat from a microelectronic device mounted on
a substrate, comprising:
a first heat sink thermally coupled to the microelectronic device, on the
substrate side of the microelectronic device, for dissipating heat from the
microelectronic device; and
wherein said first heat sink extends through an opening in the substrate.
24. An apparatus in accordance with claim 23, further comprising:
a second heat sink thermally coupled to an inteφoser for dissipating heat.
25. An apparatus for dissipating heat from a microelectronic device connected to
a substrate through an inteφoser, comprising:
a first heat sink thermally coupled to the inteφoser, on the substrate side of
the silicon-inteφoser.
26. An apparatus in accordance with claim 25, further comprising:
a second heat sink thermally coupled to the microelectronic device for
dissipating heat.
27. A method of cooling a microelectronic device, comprising: electrically connecting the microelectronic device to a substrate with an
inteφoser;
mounting the microelectronic device and said inteφoser over an opening in
said substrate;
thermally connecting the microelectronic device and said inteφoser to a pair
of heat sinks; and
wherein one of said pair of heat sinks extends through an opening in the
substrate.
28. A method in accordance with claim 27, further comprising:
regulating the electrical power supplied to the microelectronic device with
said inteφoser.
29. A method of cooling a microelectronic device, comprising:
dissipating heat from a microelectronic device and inteφoser unit through a
pair of heat sinks located on opposite sides of plane defined by a substrate; and
connecting first of said pair of heat sinks to said microelectronic device and
inteφoser unit through an opening in said substrate.
30. A method in accordance with claim 29, further comprising:
connecting second of said pair of heat sinks to said microelectronic
device and inteφoser unit on the side opposite the substrate.
PCT/US2003/009681 2002-04-19 2003-03-27 Dual-sided heat removal system WO2003090278A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03726148A EP1497860A2 (en) 2002-04-19 2003-03-27 Dual-sided heat removal system
AU2003228399A AU2003228399A1 (en) 2002-04-19 2003-03-27 Dual-sided heat removal system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/126,200 US6580611B1 (en) 2001-12-21 2002-04-19 Dual-sided heat removal system
US10/126,200 2002-04-19

Publications (2)

Publication Number Publication Date
WO2003090278A2 true WO2003090278A2 (en) 2003-10-30
WO2003090278A3 WO2003090278A3 (en) 2003-12-18

Family

ID=29248412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/009681 WO2003090278A2 (en) 2002-04-19 2003-03-27 Dual-sided heat removal system

Country Status (5)

Country Link
US (1) US6580611B1 (en)
EP (2) EP1497860A2 (en)
CN (1) CN100380642C (en)
AU (1) AU2003228399A1 (en)
WO (1) WO2003090278A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2146374A1 (en) * 2008-07-02 2010-01-20 Thales Holdings UK Plc Printed circuit board assembly
WO2018063171A1 (en) * 2016-09-28 2018-04-05 Intel Corporation Thermal conductivity for integrated circuit packaging

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8055555B2 (en) * 2001-09-25 2011-11-08 Emc Corporation Mediation device for scalable storage service
US6989592B2 (en) * 2002-05-01 2006-01-24 The Boeing Company Integrated power module with reduced thermal impedance
US8837161B2 (en) * 2002-07-16 2014-09-16 Nvidia Corporation Multi-configuration processor-memory substrate device
JP4159861B2 (en) * 2002-11-26 2008-10-01 新日本無線株式会社 Method for manufacturing heat dissipation structure of printed circuit board
US6825559B2 (en) * 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US20040184236A1 (en) * 2003-03-20 2004-09-23 Kuang-Yao Lee Central processing unit (CPU) heat sink module
US20040188811A1 (en) * 2003-03-24 2004-09-30 Intel Corporation Circuit package apparatus, systems, and methods
TWI273680B (en) * 2003-03-27 2007-02-11 Siliconware Precision Industries Co Ltd Semiconductor package with embedded heat spreader abstract of the disclosure
US20050207115A1 (en) * 2004-03-18 2005-09-22 Hewlett-Packard Development Company, L.P. Heat dissipating arrangement
TWI244182B (en) * 2004-11-12 2005-11-21 Via Tech Inc Heat-dissipation device
US8164182B2 (en) * 2004-11-15 2012-04-24 Stats Chippac Ltd. Hyper thermally enhanced semiconductor package system comprising heat slugs on opposite surfaces of a semiconductor chip
US20060103008A1 (en) * 2004-11-15 2006-05-18 Stats Chippac Ltd. Hyper thermally enhanced semiconductor package system
DE102005012147A1 (en) * 2005-03-16 2006-05-11 Siemens Ag Thermal and mechanical mounting of an electronic circuit board has heat sink mounted in aperture in circuit board
JP2006339223A (en) * 2005-05-31 2006-12-14 Toshiba Tec Corp Heat dissipation structure of cpu
TWI278276B (en) * 2005-08-15 2007-04-01 Via Tech Inc Electronic system
SG130055A1 (en) * 2005-08-19 2007-03-20 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
US7272001B2 (en) * 2005-09-09 2007-09-18 King Young Technology Co., Ltd. External conductive heat dissipating device for microcomputers
US20070076377A1 (en) * 2005-10-03 2007-04-05 Matteo Gravina Bi-Polar Thermal Managment
US7295433B2 (en) * 2005-10-28 2007-11-13 Delphi Technologies, Inc. Electronics assembly having multiple side cooling and method
SE529394C2 (en) * 2005-12-08 2007-07-31 Danaher Motion Stockholm Ab Electric drive unit with positioning unit, which pushes components against a cooler
JP2007250692A (en) * 2006-03-14 2007-09-27 Nec Corp Structure and method of mounting heat sink to substrate
JP2007335663A (en) * 2006-06-15 2007-12-27 Toyota Motor Corp Semiconductor module
US7903425B2 (en) * 2006-06-27 2011-03-08 Lenovo (Singapore) Pte. Ltd. Integrated circuit chip thermal solution
US7646093B2 (en) * 2006-12-20 2010-01-12 Intel Corporation Thermal management of dies on a secondary side of a package
US7579686B2 (en) * 2006-12-29 2009-08-25 Intel Corporation Thermal interface material with hotspot heat remover
US7983048B2 (en) * 2007-02-15 2011-07-19 Nec Corporation Structure for mounting semiconductor package
US7706144B2 (en) * 2007-12-17 2010-04-27 Lynch Thomas W Heat dissipation system and related method
US8035216B2 (en) * 2008-02-22 2011-10-11 Intel Corporation Integrated circuit package and method of manufacturing same
DE102008031231B4 (en) 2008-07-02 2012-12-27 Siemens Aktiengesellschaft Manufacturing process for planar electronic power electronics modules for high-temperature applications and corresponding power electronics module
US7724528B2 (en) * 2008-07-11 2010-05-25 Cisco Technology, Inc. Thermal dissipation heat slug sandwich
US8907462B2 (en) * 2009-02-05 2014-12-09 Hewlett-Packard Development Company, L. P. Integrated circuit package
US8379391B2 (en) * 2009-05-13 2013-02-19 Smart Modular Technologies, Inc. Memory module with vertically accessed interposer assemblies
US20110078346A1 (en) * 2009-09-28 2011-03-31 O'connor Michael Computer Networking Device and Method Thereof
US20110108999A1 (en) * 2009-11-06 2011-05-12 Nalla Ravi K Microelectronic package and method of manufacturing same
JP4818429B2 (en) * 2009-12-28 2011-11-16 株式会社東芝 Electronics
US8901724B2 (en) 2009-12-29 2014-12-02 Intel Corporation Semiconductor package with embedded die and its methods of fabrication
US8742561B2 (en) 2009-12-29 2014-06-03 Intel Corporation Recessed and embedded die coreless package
US8535989B2 (en) 2010-04-02 2013-09-17 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US8319318B2 (en) 2010-04-06 2012-11-27 Intel Corporation Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages
US8618652B2 (en) 2010-04-16 2013-12-31 Intel Corporation Forming functionalized carrier structures with coreless packages
US9847308B2 (en) 2010-04-28 2017-12-19 Intel Corporation Magnetic intermetallic compound interconnect
US8939347B2 (en) 2010-04-28 2015-01-27 Intel Corporation Magnetic intermetallic compound interconnect
US8313958B2 (en) 2010-05-12 2012-11-20 Intel Corporation Magnetic microelectronic device attachment
US8434668B2 (en) 2010-05-12 2013-05-07 Intel Corporation Magnetic attachment structure
US8609532B2 (en) 2010-05-26 2013-12-17 Intel Corporation Magnetically sintered conductive via
US20120001339A1 (en) 2010-06-30 2012-01-05 Pramod Malatkar Bumpless build-up layer package design with an interposer
US8372666B2 (en) 2010-07-06 2013-02-12 Intel Corporation Misalignment correction for embedded microelectronic die applications
US8796842B2 (en) * 2010-08-20 2014-08-05 Ati Technologies Ulc Stacked semiconductor chip device with thermal management circuit board
US8754516B2 (en) 2010-08-26 2014-06-17 Intel Corporation Bumpless build-up layer package with pre-stacked microelectronic devices
US8472190B2 (en) * 2010-09-24 2013-06-25 Ati Technologies Ulc Stacked semiconductor chip device with thermal management
US8304913B2 (en) 2010-09-24 2012-11-06 Intel Corporation Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby
FR2973942B1 (en) * 2011-04-08 2013-09-06 Continental Automotive France ELECTRONIC COMPONENT WITH THERMAL DISSIPATION PASTILLE AND CARD USING THE SAME
US8937382B2 (en) 2011-06-27 2015-01-20 Intel Corporation Secondary device integration into coreless microelectronic device packages
US8848380B2 (en) 2011-06-30 2014-09-30 Intel Corporation Bumpless build-up layer package warpage reduction
CN202276549U (en) * 2011-09-26 2012-06-13 番禺得意精密电子工业有限公司 Electric connection component
KR20130102405A (en) * 2012-03-07 2013-09-17 삼성전자주식회사 Flip chip package and method of manufacturing the same
US10136516B2 (en) * 2012-03-13 2018-11-20 Intel Corporation Microelectronic device attachment on a reverse microelectronic package
WO2013137710A1 (en) 2012-03-13 2013-09-19 Intel Corporation (A Corporation Of Delaware) Microelectronic device attachment on a reverse microelectronic package
WO2013172814A1 (en) 2012-05-14 2013-11-21 Intel Corporation Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias
US20130308274A1 (en) * 2012-05-21 2013-11-21 Triquint Semiconductor, Inc. Thermal spreader having graduated thermal expansion parameters
CN104321864B (en) 2012-06-08 2017-06-20 英特尔公司 Microelectronics Packaging with the non-coplanar, microelectronic component of encapsulating and solderless buildup layer
US9209106B2 (en) 2012-06-21 2015-12-08 Ati Technologies Ulc Thermal management circuit board for stacked semiconductor chip device
US10008475B2 (en) 2012-09-27 2018-06-26 Intel Corporation Stacked-die including a die in a package substrate
US20140190727A1 (en) * 2013-01-10 2014-07-10 Starlite Led Usa Method of fabricating flexible metal core printed circuit board
CN105874590B (en) 2013-09-27 2019-08-13 英特尔公司 Bilateral formula die package
US9331058B2 (en) * 2013-12-05 2016-05-03 Apple Inc. Package with SoC and integrated memory
TWI607675B (en) * 2013-12-13 2017-12-01 台達電子企業管理(上海)有限公司 Dc/dc power module and dc/dc power system assembly
JP6190732B2 (en) * 2014-01-30 2017-08-30 新光電気工業株式会社 Heat sink and semiconductor device
US10148063B2 (en) 2014-01-31 2018-12-04 Hewlett Packard Enterprise Development Lp Thermally conductive and electrically insulating interposer having active optical device mounted thereon
US9190399B2 (en) 2014-03-06 2015-11-17 International Business Machines Corporation Thermally enhanced three-dimensional integrated circuit package
US9269700B2 (en) * 2014-03-31 2016-02-23 Micron Technology, Inc. Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods
US9397471B2 (en) * 2014-11-14 2016-07-19 Intel Corporation Heat removal from photonic devices
CN105938821B (en) * 2015-03-03 2020-04-28 台湾积体电路制造股份有限公司 Thermally enhanced heat sink
US10506702B2 (en) * 2015-07-24 2019-12-10 Nec Corporation Mounting structure, method for manufacturing mounting structure, and radio device
US10121766B2 (en) * 2016-06-30 2018-11-06 Micron Technology, Inc. Package-on-package semiconductor device assemblies including one or more windows and related methods and packages
US10504813B2 (en) * 2016-09-30 2019-12-10 Astec International Limited Heat sink assemblies for surface mounted devices
US10153261B2 (en) * 2017-04-03 2018-12-11 Cisco Technology, Inc. Cooling system for high power application specific integrated circuit with embedded high bandwidth memory
CN114071966A (en) 2017-05-18 2022-02-18 北京嘉楠捷思信息技术有限公司 Circuit board, radiator, working assembly and electronic equipment
US10785864B2 (en) * 2017-09-21 2020-09-22 Amazon Technologies, Inc. Printed circuit board with heat sink
US10476188B2 (en) 2017-11-14 2019-11-12 Amazon Technologies, Inc. Printed circuit board with embedded lateral connector
US11683911B2 (en) * 2018-10-26 2023-06-20 Magna Electronics Inc. Vehicular sensing device with cooling feature
US11166363B2 (en) * 2019-01-11 2021-11-02 Tactotek Oy Electrical node, method for manufacturing electrical node and multilayer structure comprising electrical node
CN109887900B (en) * 2019-03-08 2020-09-15 中国科学院微电子研究所 Large-size chip system packaging structure with rigid-flex board and manufacturing method thereof
US11769710B2 (en) * 2020-03-27 2023-09-26 Xilinx, Inc. Heterogeneous integration module comprising thermal management apparatus
US11596067B2 (en) * 2020-04-23 2023-02-28 Hong Fu Jin Precision Industry (Wuhan) Co., Ltd. Stacked circuit boards
US11864323B2 (en) * 2020-07-15 2024-01-02 Toyota Motor Engineering & Manufacturing North America, Inc. Driver board assemblies and methods of forming a driver board assembly
JP7447785B2 (en) * 2020-12-25 2024-03-12 株式会社デンソー electronic equipment
US11581241B2 (en) * 2020-12-29 2023-02-14 Nxp Usa, Inc. Circuit modules with front-side interposer terminals and through-module thermal dissipation structures

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0729183A2 (en) * 1995-02-24 1996-08-28 AT&T Corp. Thin packaging of multi-chip modules with enhanced thermal/power management
EP0871352A1 (en) * 1997-03-28 1998-10-14 Nec Corporation Integrated circuit device cooling structure
EP1009195A1 (en) * 1998-12-07 2000-06-14 Pioneer Corporation Radiation structure for heating element
WO2000069236A1 (en) * 1999-05-10 2000-11-16 Microsubstrates Corporation A thermally enhanced via/bga microwave circuit ceramic package
US6268239B1 (en) * 1999-04-20 2001-07-31 Nec Corporation Semiconductor chip cooling structure and manufacturing method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8421499D0 (en) * 1984-08-24 1984-09-26 British Telecomm Heat sink
US5810607A (en) * 1995-09-13 1998-09-22 International Business Machines Corporation Interconnector with contact pads having enhanced durability
US5473510A (en) * 1994-03-25 1995-12-05 Convex Computer Corporation Land grid array package/circuit board assemblies and methods for constructing the same
US5671121A (en) * 1994-09-29 1997-09-23 Intel Corporation Kangaroo multi-package interconnection concept
US5825625A (en) * 1996-05-20 1998-10-20 Hewlett-Packard Company Heat conductive substrate mounted in PC board for transferring heat from IC to heat sink
US6181567B1 (en) * 1997-06-04 2001-01-30 Ncr Corporation Method and apparatus for securing an electronic package to a circuit board
JP3147087B2 (en) * 1998-06-17 2001-03-19 日本電気株式会社 Stacked semiconductor device heat dissipation structure
US6392296B1 (en) * 1998-08-31 2002-05-21 Micron Technology, Inc. Silicon interposer with optical connections
US6229216B1 (en) * 1999-01-11 2001-05-08 Intel Corporation Silicon interposer and multi-chip-module (MCM) with through substrate vias
US6265771B1 (en) * 1999-01-27 2001-07-24 International Business Machines Corporation Dual chip with heat sink
US6617681B1 (en) * 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
US6366467B1 (en) * 2000-03-31 2002-04-02 Intel Corporation Dual-socket interposer and method of fabrication therefor
CN100539106C (en) * 2000-09-25 2009-09-09 揖斐电株式会社 Semiconductor element and manufacture method thereof, multilayer printed-wiring board and manufacture method thereof
US6407924B1 (en) * 2001-01-09 2002-06-18 International Business Machines Corporation Enhanced thermal path mechanical tolerance system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0729183A2 (en) * 1995-02-24 1996-08-28 AT&T Corp. Thin packaging of multi-chip modules with enhanced thermal/power management
EP0871352A1 (en) * 1997-03-28 1998-10-14 Nec Corporation Integrated circuit device cooling structure
EP1009195A1 (en) * 1998-12-07 2000-06-14 Pioneer Corporation Radiation structure for heating element
US6268239B1 (en) * 1999-04-20 2001-07-31 Nec Corporation Semiconductor chip cooling structure and manufacturing method thereof
WO2000069236A1 (en) * 1999-05-10 2000-11-16 Microsubstrates Corporation A thermally enhanced via/bga microwave circuit ceramic package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1497860A2 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2146374A1 (en) * 2008-07-02 2010-01-20 Thales Holdings UK Plc Printed circuit board assembly
US8278559B2 (en) 2008-07-02 2012-10-02 Thales Holdings Uk Plc Printed circuit board assembly
WO2018063171A1 (en) * 2016-09-28 2018-04-05 Intel Corporation Thermal conductivity for integrated circuit packaging
US10729000B2 (en) 2016-09-28 2020-07-28 Intel Corporation Thermal conductivity for integrated circuit packaging
US11147153B2 (en) 2016-09-28 2021-10-12 Intel Corporation Thermal conductivity for integrated circuit packaging

Also Published As

Publication number Publication date
CN1663043A (en) 2005-08-31
EP1497860A2 (en) 2005-01-19
CN100380642C (en) 2008-04-09
US6580611B1 (en) 2003-06-17
WO2003090278A3 (en) 2003-12-18
AU2003228399A1 (en) 2003-11-03
EP2450950A3 (en) 2012-09-26
EP2450950A2 (en) 2012-05-09

Similar Documents

Publication Publication Date Title
US6580611B1 (en) Dual-sided heat removal system
US7209366B2 (en) Delivery regions for power, ground and I/O signal paths in an IC package
US7872876B2 (en) Multi-layered printed circuit board
US5982630A (en) Printed circuit board that provides improved thermal dissipation
US6040624A (en) Semiconductor device package and method
US8866291B2 (en) Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs)
US20070090517A1 (en) Stacked die package with thermally conductive block embedded in substrate
US5130768A (en) Compact, high-density packaging apparatus for high performance semiconductor devices
JPH09116057A (en) Apparatus for improvement of power diffusion of semiconductor device
EP2525632A1 (en) Systems for circuit board heat transfer and method of assembling same
US6101094A (en) Printed circuit board with integrated cooling mechanism
US6943293B1 (en) High power electronic package with enhanced cooling characteristics
KR20010104237A (en) Integrated circuit power supply
US11791315B2 (en) Semiconductor assemblies including thermal circuits and methods of manufacturing the same
US6396700B1 (en) Thermal spreader and interface assembly for heat generating component of an electronic device
KR101008772B1 (en) Thermal-conductive substrate package
US6700195B1 (en) Electronic assembly for removing heat from a flip chip
CN114035282A (en) Optical module
JPH09213851A (en) Heat radiation method and heat radiation means for ic device
US7438558B1 (en) Three-dimensional stackable die configuration for an electronic circuit board
US20100020505A1 (en) Printed Circuit Board Assembly Having Multiple Land Grid Arrays for Providing Power Distribution
JP2803603B2 (en) Multi-chip package structure
US6206708B1 (en) Through via plate electrical connector and method of manufacture thereof
JP5115200B2 (en) Electronic device, package having the same, and electronic device
WO2023115450A1 (en) Integrated top side power delivery thermal technology

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003726148

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20038139790

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003726148

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP