WO2003092013A3 - Self-aligned magnetic tunneling junction and via contact - Google Patents

Self-aligned magnetic tunneling junction and via contact Download PDF

Info

Publication number
WO2003092013A3
WO2003092013A3 PCT/US2003/011989 US0311989W WO03092013A3 WO 2003092013 A3 WO2003092013 A3 WO 2003092013A3 US 0311989 W US0311989 W US 0311989W WO 03092013 A3 WO03092013 A3 WO 03092013A3
Authority
WO
WIPO (PCT)
Prior art keywords
self
via contact
tunneling junction
magnetic tunneling
aligned magnetic
Prior art date
Application number
PCT/US2003/011989
Other languages
French (fr)
Other versions
WO2003092013A2 (en
Inventor
Brian R Butcher
Kelly W Kyler
Gregory W Grynkewich
Mark A Durlam
Earl D Fuchs
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2003222634A priority Critical patent/AU2003222634A1/en
Publication of WO2003092013A2 publication Critical patent/WO2003092013A2/en
Publication of WO2003092013A3 publication Critical patent/WO2003092013A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

A method of fabricating a magnetoresistive random access memory device (10) comprising the steps of providing a substrate (11), forming a first conductive layer positioned on the substrate (16), forming a conductive material stack region with a flat surface, the conductive material stack region being positioned on a portion of the first conductive layer, and forming a magnetoresistive random access memory device (27) positioned on the flat surface of the conductive material stack region, the magnetoresistive random access memory device being isolated from the first conductive layer and subsequent layers grown thereon.
PCT/US2003/011989 2002-04-26 2003-04-17 Self-aligned magnetic tunneling junction and via contact WO2003092013A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003222634A AU2003222634A1 (en) 2002-04-26 2003-04-17 Self-aligned magnetic tunneling junction and via contact

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/133,136 US6783994B2 (en) 2002-04-26 2002-04-26 Method of fabricating a self-aligned magnetic tunneling junction and via contact
US10/133,136 2002-04-26

Publications (2)

Publication Number Publication Date
WO2003092013A2 WO2003092013A2 (en) 2003-11-06
WO2003092013A3 true WO2003092013A3 (en) 2004-04-15

Family

ID=29248922

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/011989 WO2003092013A2 (en) 2002-04-26 2003-04-17 Self-aligned magnetic tunneling junction and via contact

Country Status (3)

Country Link
US (1) US6783994B2 (en)
AU (1) AU2003222634A1 (en)
WO (1) WO2003092013A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596536B2 (en) * 2002-03-26 2004-12-02 ソニー株式会社 Magnetic memory device and method of manufacturing the same
JP3935049B2 (en) * 2002-11-05 2007-06-20 株式会社東芝 Magnetic storage device and manufacturing method thereof
US7022247B2 (en) * 2003-03-26 2006-04-04 Union Semiconductor Technology Corporation Process to form fine features using photolithography and plasma etching
KR100682967B1 (en) * 2006-02-22 2007-02-15 삼성전자주식회사 Xor logic circuit using magnetic tunneling junction cell and method for operating the xor logic circuit
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7442603B2 (en) * 2006-08-16 2008-10-28 Macronix International Co., Ltd. Self-aligned structure and method for confining a melting point in a resistor random access memory
US8895323B2 (en) * 2011-12-19 2014-11-25 Lam Research Corporation Method of forming a magnetoresistive random-access memory device
KR102011933B1 (en) 2013-03-06 2019-08-20 삼성전자 주식회사 Method for fabricating nonvolatile memory device
KR102022873B1 (en) 2013-03-12 2019-11-04 삼성전자 주식회사 Nonvolatile memory device and method for fabricating the same
KR101713871B1 (en) 2013-03-14 2017-03-09 삼성전자주식회사 Magnetoresistive random access device and method of manufacturing the same
CN104716257A (en) * 2013-12-12 2015-06-17 中芯国际集成电路制造(上海)有限公司 Semiconductor device manufacturing method
CN104733607B (en) * 2013-12-20 2017-08-01 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and its manufacture method
US9893120B2 (en) * 2016-04-15 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US10069064B1 (en) * 2017-07-18 2018-09-04 Headway Technologies, Inc. Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same
KR102344320B1 (en) * 2017-08-11 2021-12-28 삼성전자주식회사 Semiconductor device including dummy contact
US10535816B2 (en) * 2017-11-22 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure, MRAM device using the via structure and method for fabricating the MRAM device
CN112736189A (en) * 2019-10-14 2021-04-30 上海磁宇信息科技有限公司 Magnetic memory bottom electrode and manufacturing process thereof and magnetic memory
US20210336130A1 (en) * 2020-04-22 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing mram device with enhanced etch control
CN112054009A (en) * 2020-09-16 2020-12-08 浙江驰拓科技有限公司 Memory and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
EP1134743A2 (en) * 2000-03-13 2001-09-19 Matsushita Electric Industrial Co., Ltd. Magneto-resistive device and magneto-resistive effect type storage device
WO2002019338A1 (en) * 2000-09-01 2002-03-07 Infineon Technologies Ag Memory cell arrangement and method for the production thereof
US20020036919A1 (en) * 2000-08-17 2002-03-28 Daughton James M. Circuit selection of magnetic memory cells and related cell structures
US20020042158A1 (en) * 2000-10-10 2002-04-11 Alfred Kersch Method of fabricating a micro-technical structure, and micro-technical component
US6518071B1 (en) * 2002-03-28 2003-02-11 Motorola, Inc. Magnetoresistive random access memory device and method of fabrication thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
EP1134743A2 (en) * 2000-03-13 2001-09-19 Matsushita Electric Industrial Co., Ltd. Magneto-resistive device and magneto-resistive effect type storage device
US20020036919A1 (en) * 2000-08-17 2002-03-28 Daughton James M. Circuit selection of magnetic memory cells and related cell structures
WO2002019338A1 (en) * 2000-09-01 2002-03-07 Infineon Technologies Ag Memory cell arrangement and method for the production thereof
US20020042158A1 (en) * 2000-10-10 2002-04-11 Alfred Kersch Method of fabricating a micro-technical structure, and micro-technical component
US6518071B1 (en) * 2002-03-28 2003-02-11 Motorola, Inc. Magnetoresistive random access memory device and method of fabrication thereof

Also Published As

Publication number Publication date
WO2003092013A2 (en) 2003-11-06
US6783994B2 (en) 2004-08-31
US20030203509A1 (en) 2003-10-30
AU2003222634A8 (en) 2003-11-10
AU2003222634A1 (en) 2003-11-10

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