WO2003101750A1 - Information recording medium and process for producing the same - Google Patents
Information recording medium and process for producing the same Download PDFInfo
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- WO2003101750A1 WO2003101750A1 PCT/JP2003/006439 JP0306439W WO03101750A1 WO 2003101750 A1 WO2003101750 A1 WO 2003101750A1 JP 0306439 W JP0306439 W JP 0306439W WO 03101750 A1 WO03101750 A1 WO 03101750A1
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- recording medium
- recording layer
- information recording
- recording
- nitride
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Definitions
- the present invention relates to an optical information recording medium such as an optical disk for recording and reproducing information by irradiating a light beam, an optical information recording medium such as a light source, and a method of manufacturing the same.
- DVDs Digital Verstiles Disc
- this DVD can be made recordable using an organic dye material in the recording layer (DVD-(recordable)), or can be made rewritable using a phase change material in the recording layer.
- -recordab 1 e For further densification, it is required to perform recording and reproduction with a light beam in a wavelength range shorter than 635 nm.However, sufficient optical disc characteristics have not been realized with conventional write-once optical discs. .
- An object of the present invention is to provide an information recording medium having a large difference in reflectance before and after recording and having excellent characteristics such as jitter characteristics, and a method for manufacturing the same.
- the information recording medium of the present invention is an information recording medium comprising a recording layer made of a material whose reflectance changes when irradiated with a light beam, on which information is recorded as a change in reflectance, and a substrate carrying the recording layer. Wherein the recording layer is made of a metal nitride.
- the recording layer of the information recording medium of the present invention includes a low-temperature decomposed nitride that decomposes at a predetermined temperature or less to generate nitrogen and is not completely nitrided; Characterized by comprising a mixture of
- a method for manufacturing an information recording medium comprises a recording layer made of a material whose reflectivity changes upon irradiation with a light beam, on which information is recorded as a change in reflectivity;
- a method for producing an information recording medium comprising a substrate carrying the recording layer, wherein the recording layer is made of a metal nitride, wherein the reaction using a substrate made of a metal constituting the metal nitride is performed. includes a recording layer forming step of forming the recording layer by sputtering evening method, the recording layer forming flow ratio in the atmosphere containing a r and N 2 in step a r: N 2 8 0: 1 0-1 0: It is characterized in that it is set within the range of 80.
- FIG. 1 is a schematic partial sectional view showing an information recording medium of the present invention.
- FIG. 2 is a schematic partial plan view showing the information recording medium of the present invention.
- FIG. 3 is a graph showing a differential scanning calorimetry curve of the BIN recording layer of the information recording medium.
- FIG. 4 is a graph showing spectral characteristics of ESCA analysis before and after recording on the BIN recording layer of the information recording medium.
- FIG. 5 is a flowchart showing the information recording medium manufacturing method of the present invention.
- FIG. 6 is a graph showing a change in the absorptance of light having a wavelength of 405 nm in the recording layer of the example.
- FIG. 7 is a graph showing a change in absorptance of light having a wavelength of 635 nm in the recording layer of the example.
- FIG. 8 is a graph showing changes in recording power and jitter after recording with respect to the amount of added nitrogen in the recording layer of the example.
- Fig. 9 shows the change in deposition rate with respect to the amount of nitrogen added to the recording layer of the example.
- FIG. 10 is a TEM photograph of the recording mark of the BiGeN recording layer of the example.
- FIG. 11 is a TEM photograph of the recording marks of the SnTiN recording layer of the example.
- FIG. 12 is a graph showing a change in Ge with respect to the amount of added nitrogen in the recording layer of the example, and a change in the content of nitrides and oxides thereof.
- FIG. 13 is a graph showing changes in Bi and the contents of nitrides and oxides with respect to the amount of nitrogen added to the recording layer of the example.
- FIG. 14 is a flowchart illustrating a method for setting film forming conditions of reactive sputtering for forming a recording layer according to the embodiment.
- FIG. 15 is a schematic cross-sectional view showing a sputtering target for forming a recording layer of the example.
- FIG. 16 is a schematic partial plan view showing a conventional information recording medium. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 shows a configuration example of the embodiment.
- the information recording medium 1 includes a reflective layer 3, a first dielectric layer 4, a recording layer 5 mainly composed of metal nitride, a second dielectric layer 6, It has a light transmitting cover layer 7.
- a laser beam intensity-modulated according to information is irradiated through the light transmitting cover layer 7 to heat the recording layer 5.
- the recording layer is mainly composed of metal nitride and has low thermal conductivity, the temperature of the laser beam irradiated part rises due to heat storage, the recording layer is completely or partially melted, and the nitrogen content of the entire recording layer changes.
- the phase changes to change the multiple reflection conditions of the irradiated part, and the reflectance changes, resulting in a recording mark as shown in the plan view of FIG. Therefore, it can be considered that the rate of formation of the nitride in the recording layer, which changes depending on the nitrogen content, affects the sensitivity. Since the change in light reflectivity thus generated is irreversible, it can be used as a write-once type information recording medium.
- a laser beam is applied to a portion of the recording layer 5 where the reflectance changes, through the light transmitting cover layer 7, and the intensity change of the reflected light is read to demodulate information.
- the recording layer 5 can also be composed of a metal nitride, for example, a combination of one from Bi, Sn, and Fe and one from Ge, Ti, Si, and A1.
- the above-mentioned metal nitride is a material not specified in the PRTR method, and further, for example, Mg, Ca, Sr, Sc, for any of Bi, Sn, and Fe. It may be composed of a combination of unspecified substances such as Y, Zr, Hf, V, Nb, Tc, Ru, Rh, W, Re, ⁇ s, Ir, Pt, Au, and Ta. it can.
- T, Te, In, Cu, Zn, and Ag can also be used as components of the recording layer 5 in consideration of the method of use and the amount of use.
- the recording layer 5 is made of a metal nitride, a metal oxide, a metal carbide, or a mixed film thereof, such as a nitride of Bi, Sn, Fe, or Cu.
- a metal nitride such as a nitride of Bi, Sn, Fe, or Cu.
- S I_ ⁇ 2, A 1 2 O 3, G e O 2, S n O, B i 2 ⁇ 3 can also be configured by S i C of any stable metal compound as one of the combinations.
- the recording layer of the recording medium is a recording layer mainly composed of a uniformly dispersed alloy and a metal compound such as a nitride thereof.
- a reaction occurs in which nitrogen is released from the nitride in the recording layer by irradiation with the laser beam.
- the nitride must have absorptivity because the recording layer needs to absorb the laser light for that. Therefore, it is necessary that the nitride is not entirely nitrided and has a high transmittance, but contains a certain amount of non-nitrided components.
- a recording layer consisting only of insufficient nitride has a film quality close to that of an amorphous metal thin film, so that the rigidity and stress of the film are low and the thermal conductivity is high.
- the heat spreads in the horizontal direction during heating making it difficult for the film temperature to rise.
- the thermal decomposition reaction is controlled to form fine marks well.
- a substance having high transmittance with respect to reading light is selected as a substance that is difficult to thermally decompose.
- the recording layer composition can be realized by making the non-nitride a non-nitriding component in the nitride. Therefore, the recording layer of the recording medium is composed of two types of mixtures of a low-temperature decomposition nitride having a non-nitriding component and a high-temperature decomposition compound.
- the recording principle of the disc using this recording layer system is considered to be as follows.
- the recording laser light is absorbed by the heat absorber, and the temperature rises.
- the low-temperature decomposition nitride is decomposed to release nitrogen.
- (1) the optical characteristics of the recording layer change due to the release of nitrogen.
- (2) the recording layer is deformed by the released nitrogen.
- (2) is a secondary recording mode.
- the dielectric layer plays a role of preventing deformation of the recording layer when nitrogen is released from the recording layer and deformed, and also has a function of adjusting optical characteristics and a heat insulating effect on a heat dissipating effect of the metal reflective layer.
- the reflection layer is provided for the purpose of securing the heat radiation characteristic and the signal amount by multiple reflection, and thus may not be necessarily provided.
- the temperature of the recording layer that is raised by irradiation of the recording laser beam is estimated to be 400 to 600 ° C at maximum. Therefore, low-temperature decomposition nitriding
- the substances and high-temperature decomposition compounds must be selected based on the decomposition temperature, with a threshold of about 600 ° C. Table 1 shows the approximate decomposition temperatures of nitrides of various metals.
- the low-temperature decomposed nitride needs to show a reaction in which nitrogen is separated at a low temperature of 600 ° C. or less, and it is considered that the reaction at 400 ° C. or less is desirable from the viewpoint of recording sensitivity.
- the temperature is preferably 100 ° C. or more.
- Fig. 4 shows the spectral characteristics of ESCA (Electron Spectroscopy for Chemical Analysis), that is, X-ray electron spectroscopy analysis before and after recording when BIN was used as the low-temperature decomposition nitride in the recording layer. Show. In the spectral characteristics, the peak of metal Bi, which was almost absent in the unrecorded portion, appeared after the recording, and it was confirmed that the recording caused decomposition of nitrogen and bismuth.
- ESCA Electrode Spectroscopy for Chemical Analysis
- the high-temperature decomposable compound must be stable without decomposing at a temperature of 600 ° C. or less, have a relatively high transmittance to reading light, and have a high hardness.
- Representative metal compounds include metal nitrides, metal oxides, metal carbides, and the like, and mixtures thereof may be used. Except for materials specified by the PRTR method as a consideration for the environment, selection is made on the condition that the materials can be sputter deposited simultaneously with low-temperature decomposition nitride. GeN, SiN, A1N, and Tin are preferred as stable metal nitrides at high temperatures. New
- the stable metal compound at a high temperature S I_ ⁇ 2, A 1 2 0 3, G e 0 2, S n O, stable metal oxides such as B i 2 O 3, It is also possible to select a stable metal carbide such as SiC or a mixture thereof. Many oxides have strong thermal stability, and some undergo a glass transition at high temperatures. Also, among carbides, siC has high thermal stability and cannot be melted under atmospheric pressure. Table 2 shows each oxide, carbide, and melting point instead of decomposition temperature. A melting point indicates that the decomposition temperature is higher. Those with a sublimation point lower than the melting point showed a sublimation point.
- the metal nitride recording layer 5 can be formed by various vapor deposition methods, but is preferably formed by a reactive sputtering method.
- a metal alloy is used as a target, particularly in an atmosphere containing Ar and N 2. It is preferably formed by a reactive sputtering method in the inside. This manufacturing process is preferable because the recording layer can be formed uniformly once.
- a step S1 of loading a substrate into a sputtering apparatus and a reaction sputtering method using an alloy alloy comprising a metal constituting a metal nitride are performed.
- a reflective layer when a reflective layer is provided, after the substrate loading step S1, a reflective layer forming step S A first dielectric layer forming step S3 for forming the second and first dielectric layers, a recording layer forming step S4 (Ar: N 2 atmosphere), and a second dielectric layer for forming the second dielectric layer
- the forming process S 5 Ar atmosphere is performed in this order.
- a cover layer is formed (S6).
- the recording layer 5 made of a nitride with any one of the above elements, for example, GeBiN, can have an optical absorptivity near 405 nm of not less than 10% in an unrecorded portion. For example, since such an absorption rate can be obtained even in a short wavelength range of 385 to 450 nm, it is possible to cope with high-density recording using a short-wavelength laser beam. By including the metal nitride in the recording layer, it is possible to perform recording with a small recording energy in the recording using the blue-violet laser.
- the absorption ratio of the recording layer can be changed by controlling the nitrogen ratio in the metal nitride by the reaction sputtering, the degree of freedom in designing the medium is increased, and both high reflectivity and appropriate recording sensitivity can be obtained. At the same time, high modulation, low jitter, and low crosstalk can be realized.
- inert gases such as Xe and Kr other than Ar can be added to the atmosphere of the spa.
- a metal is used as a target, but a metal having a stoichiometric composition may be used. Further, by using a metal nitride target, the recording layer may be formed using only Ar without using N 2 gas.
- the thickness of the recording layer is appropriately determined according to the physical properties of the recording layer, the physical properties of the dielectric layer and the thickness thereof, but 5 to 40 nm, preferably 10 to 30 nm, e.g. I confirmed that evening could be taken. If the recording layer is too thin than 5 nm, it is difficult to increase the degree of modulation. If it is too thick, the reflectance is insufficient due to light absorption in the recording layer.
- the substrate 2 is made of glass or a plastic resin such as an acrylic resin, a polycarbonate resin, an epoxy resin, or a polyolefin resin.
- a UV curable resin or the like is applied on a flat plate by a spin coating method or the like, and is hardened. Adhesives are also used.
- the substrate 2 is disk-shaped, and its thickness is usually about 0.3 to 1.2 mm.
- a predetermined pattern such as a group may be provided on the surface of the substrate 2 as needed to guide recording / reproducing light beams such as for tracking and addressing.
- the recording / reproducing light is normally irradiated into the group.
- a group can be provided on one or both of the substrates on the light incident side and the light reflection side. The lamination of the films may be performed from either the light incident side or the light reflection side.
- the substrate 2 may be a recording medium other than a disk, for example, a card-shaped recording medium.
- Dielectric layer 4, 6, various composed of a dielectric is not particularly limited, for example, S i 0 2, S i N x, oxides such as Z n S, nitrides, sulfides, various metal oxides , metal carbides, and metal compounds and mixtures thereof for example Z n S- S i ⁇ 2.
- oxides such as Z n S, nitrides, sulfides, various metal oxides , metal carbides, and metal compounds and mixtures thereof for example Z n S- S i ⁇ 2.
- a so-called LaSi 1N dielectric containing La, Si, O, and N a so-called Si A1ON dielectric containing Si, Al, ⁇ , and N
- a conventional P RTR Only combinations of materials not specified by law can be selected.
- the dielectric layer may be composed of multiple layers. No.
- the second dielectric layer on the light incident side has a thickness of 0 to 10 O nm and is provided for adjusting the optical reflectivity and adjusting the recording mode to the desired performance of high to low or low to high. ing.
- the first dielectric layer on the light reflection side temporarily stores heat before the heat of the laser beam escapes to the reflection layer, and has an effect of sufficiently heating the recording layer.
- the thickness of the dielectric layer is 40 nm or less, preferably 10 to 30 nm.
- the reflection layer 3 is preferably made of a metal or an alloy having a high reflectance, for example, one of Ag, Al, Au, Pt, Cu, or an alloy containing at least one of these. What is necessary is just to select suitably.
- the thickness of the reflective layer 3 be 30 to 150 nm. If the thickness is less than the above range, it is difficult to obtain a sufficient reflectance. In addition, even if it exceeds the above range, the improvement of the reflectance is small, which is disadvantageous in cost.
- the reflective layer 3 is preferably formed by a vapor deposition method such as a sputtering method and a vapor deposition method. Further, a semi-transmissive film can be used for the reflective layer.
- the present invention can also be applied to a structure of a layer on the near side when viewed from the pickup of a multilayer recording disc in which a recording layer structure is laminated. If there is no reflective layer, the order of lamination is: substrate / dielectric layer / recording layer / dielectric layer Z cover layer.
- the recording layer 5 is irradiated with the recording light and the reproduction light through the light transmitting cover layer 7, so that the light transmitting cover layer 7 is effective against these lights.
- the light-transmitting cover layer 7 is provided for improving scratch resistance and corrosion resistance, and is preferably made of various organic substances.
- the radiation-curable compound and its composition are preferably used. It can be composed of a substance that has been cured by radiation such as electron beams or ultraviolet rays.
- the thickness of the light-transmitting cover layer 7 is usually about 0.1 to 600 m, and may be formed by a usual method such as spin coating, gravure coating, spray coating, and dating. Specifically, various resins such as an acrylic resin, a polycarbonate resin, an epoxy resin, and a polyolefin resin may be used. A plastic resin sheet bonded with an adhesive is also used.
- the present invention is also applicable to a double-sided recording type information recording medium. Further, it may be a single-sided recording type in which a protective layer is adhered on the light transmitting cover layer 7.
- the layer structure of the recording medium may be any other than the composition and combination of the recording layer, as long as it satisfies the requirements of the present invention.
- a reflective disk 3, a first dielectric layer 4, a recording layer 5, a second dielectric layer 6, and a light-transmitting cover layer 7 are formed on the surface of the substrate 2, and an optical disk sample having the configuration shown in FIG. Was prepared.
- a polycarbonate resin substrate having a spiral guide groove with a thickness of 1.1 mm, a diameter of 12 cm, a depth of 27 nm, and a pitch of 0.320 m was used.
- a recording layer having a thickness of 12 nm was formed by a reactive sputtering method in an atmosphere of Ar gas of 80 sccm and N 2 gas of 10 sccm, using a Bi-Ge evaporator. Filmed.
- Conditions for the reaction sputtering are, for example, an RF magnetron sputtering apparatus, with a distance between substrate targets of 120 mm, an atmospheric pressure of 0.4 to 0.8 Pa, and a power of 150 W.
- a polycarbonate resin sheet was laminated thereon as a light incident side protective layer using an ultraviolet curable resin adhesive so that the thickness of the force bar layer was 0.1 mm, thereby obtaining a recording medium of Example. .
- the recording power was 5.3 mW
- the window width was 15.15 nsec
- the linear velocity was 5.3 m / s
- the objective lens had a wavelength of 405 nm and a numerical aperture of 0.8.
- a 1-7 modulation random pattern was recorded. When the zipper was measured after recording, about 9.8% of the zipper was obtained.
- Example 2 A r to gas 7 0 sccm in an atmosphere of N 2 gas 2 0 sccm and reaction sputtering evening forming a recording layer, a thickness of 2 5 nm on the light incident side Z n S - S i ⁇ Paragraph Example 2 was formed in the same manner as Example 1 except that two dielectric layers were provided.
- a random pattern was recorded in the same manner as in Example 1 except that the recording power was changed to 5. OmW, and the jitter was measured after recording. As a result, a good jitter of about 7.5% was obtained.
- Example 3 A r gas 5 0 to reaction sputtering evening in an atmosphere of N 2 gas 40 sccm forming a recording layer with respect sccm, thickness 2 0 nm on the light incident side Z n S- S i ⁇ 2 second Example 3 was formed in the same manner as Example 1 except that a dielectric layer was provided.
- Recording pattern A random pattern was recorded in the same manner as in Example 1 except that 5.2 mW was used, and the zipper was measured after recording. As a result, a good zipper of about 7.3% was obtained.
- Example 4 A reaction layer was sputtered in an atmosphere of N 2 gas at 70 sccm against Ar gas at 20 sccm to form a recording layer, and the light incident side with a thickness of 15 nm was ZnS—S i ⁇ 2
- Example 4 was formed in the same manner as Example 1 except that the second dielectric layer was provided.
- a random pattern was recorded in the same manner as in Example 1 except that the recording power was changed to 5.7 mW, and the jitter was measured after recording. As a result, a good jitter of about 7.4% was obtained.
- Sputtering was performed in an atmosphere containing only Ar gas without adding nitrogen to form a 25 nm thick B i Ge recording layer, and a light incident side and a reflection side of 20 nm and 40 nm in thickness Zn except having a S- S i 0 2 dielectric layer, in the same manner as in example 1 to form a specific Comparative examples 1.
- a random pattern was recorded in the same manner as in Example 1 except that the recording power was changed to 5.0 mW, and the jitter was measured after recording. As a result, the measurable level was 20% or more.
- Sputtering was performed in an atmosphere containing only Ar gas without addition of nitrogen without forming a reflective layer, and a 30 nm thick BiGe recording layer was formed. except having a light incident side and the reflection side Z n S- S i 0 2 dielectric layer in nm, in the same manner as in example 1 to form a second comparative example.
- Recording pattern 5 A random pattern was recorded in the same manner as in Example 1 except that OmW was set, and the jitter was measured after recording. Obtained.
- FIG. 8 shows the recording power and the change in the post-recording jitter with respect to the amount of nitrogen added to the recording layer of the example
- FIG. 9 shows the change in the deposition rate with respect to the amount of nitrogen added to the recording layer of the example.
- FIG. 6 shows that the recording layer made of GeBi nitride can secure an absorptivity of light near 405 nm of 10% or more in the unrecorded portion.
- the layers were laminated in this order by the sputtering method and the reactive sputtering method.
- the recording layer was formed by reactive sputtering using a non-nitrided alloy target of a metal component and introducing nitrogen gas into Ar gas. Thereafter, the polycarbonate sheet was bonded and cured by using an ultraviolet curable resin as an adhesive to form a 0.1 mm thick light incident side protective layer, and the optical discs of Examples A to C were manufactured.
- Table 3 shows the film thickness of each layer, the recording layer (film thickness, composition, stacking order) and the reaction sputtering conditions.
- Optical discs of Comparative Examples H and I were manufactured in the same manner as in the Example, except that the recording layer was formed of an alloy without adding nitrogen and N 2 in the same manner as in the above Comparative Example.
- Table 4 shows the film thickness of each layer, recording layer (film thickness, composition, lamination order) and sputtering conditions. Table 4
- the objective lens aperture having a predetermined recording power and window width of 15.15 nsec, a linear velocity of 5.3 m / s, and a wavelength of 405 nm using a multi-pass recording was used.
- a 0.85 optical head Using a 0.85 optical head, a 1-7 modulation random pattern was recorded, and the jitter after recording was measured. Table 5 shows the results.
- Fig. 10 shows the TEM (transmission electron microscope) image of the recording mark of the BiGeN recording layer (Example 2)
- Fig. 11 the TEM of the recording mark of the Pn SnTiN recording layer (disk A). The observation image is shown. It can be confirmed that a recording mark of good shape made of sub-micro bubbles was formed without protruding from the recording guide groove. Further, although not shown, according to an atomic force microscope (AFM) observation image, for a recording guide groove having a groove depth of 27 nm, the difference in height in the film thickness direction between an unrecorded portion and a recorded portion is not significant. It was at most about 6 nm.
- AFM atomic force microscope
- Fig. 12 shows the change in non-nitride (Ge, oxide) and nitride content with respect to the amount of nitrogen added
- Fig. 13 shows the change in non-nitride (B i, oxide) with respect to the amount of nitrogen added. ) And changes in the nitride content.
- the metal Ge remains at the nitrogen introduction amount of 5 sccm during film formation.
- Metal Ge oxidizes on the recording layer during analysis and forms as Ge- ⁇ composition Some of them are in non-nitrided state, including those that have been oxidized.
- metal Ge is almost eliminated, and at a nitrogen introduction amount of 20 sccm or more, only a Ge-N composition is observed.
- Ge in the recording layer is nitrided to 85% or more when the nitrogen introduction amount is 10 sccm or more. If the amount of nitrogen introduced is large, the film formation rate will decrease, so the amount of nitrogen introduced is effective at 10 to 80 sccm. Preferably, the range where the absorption of the recording layer is sufficient is superior in terms of recording sensitivity, and therefore, the nitrogen introduction amount is desirably 10 to 60 sccm.
- metal Bi remains when the introduced amount of nitrogen is 5 sccm during film formation.
- Bi exists as a mixture of metal Bi and Bi-N composition. As the amount of introduced nitrogen during film formation increases, the proportion of nitride increases.
- high temperature decomposition compounds such as metal nitrides are in the range of 20 to 40 atm.%
- high temperature decomposition compounds are formed from nitrides. To achieve this, it is necessary to adjust the nitrogen flow rate so that the film is completely nitrided during film formation.
- Increasing the flow rate of nitrogen introduction reduces the non-nitrided components of low-temperature decomposition nitride and reduces absorption, lowering the sensitivity of the recording layer and lowering the deposition rate. Since productivity decreases, it is advantageous in terms of productivity to adjust the nitrogen introduction as small as possible.
- the method for setting the deposition conditions for reactive sputtering for depositing a recording layer when the high-temperature decomposition compound is metal nitride is as follows: first, an alloy of the metal component of the metal nitride, A sputtering target composed of at least one of the oxide and the nitride thereof, for example, an alloy target for a recording layer is manufactured (SS1), and the flow rates of the Ar gas and the nitrogen gas as the sputtering introduction gas are determined from the initial values ( SS 2), reactive sputtering film formation (SS 3), component analysis of the formed recording layer (SS 4), and judge whether or not the high-temperature decomposition compound is completely nitrided (SS 5) .
- the process returns to the nitrogen gas flow rate determination step to increase the nitrogen gas flow rate and complete the nitridation.
- the high-temperature decomposition compound is completely nitrided, it is determined whether or not the non-nitridation component of the low-temperature decomposition nitride is sufficient (SS 6).
- the non-nitriding component of the low-temperature decomposition nitride is not sufficient, the flow returns to the nitrogen gas flow rate determining step, and the flow rate of the nitrogen gas is reduced to secure the non-nitriding component in the recording layer.
- the setting of the film formation conditions of the recording layer is completed by setting the flow rate of the nitrogen gas in that state as the determined value (SS 7), and the recording layer manufacturing process is started. move on.
- the film forming conditions may be set in the same manner.
- FIG. 15 is a schematic sectional view showing a disk-shaped sunset T fixed to a backing plate PP of a sputtering target for forming a recording layer.
- the sunset is formed as a uniform alloy or nitride or oxide. Alternatively, it can be configured as a single mosaic in consideration of the sputter rate.
- the thermal decomposition reaction is controlled by forming a mixed film of a metal nitride which is easily decomposed by the recording power and a metal compound which is not easily decomposed by the recording power.
- fine marks can be formed in good shape, and recording can be performed mainly by changing the optical characteristics of the recording layer after thermal decomposition.
- a recording layer having a large difference in reflectance before and after recording, a high S / N ratio, and excellent jitter characteristics can be obtained.
- the mixed film can be formed at a time by a nitrogen-introduced reactive sputtering by adjusting the sputtering target.
- inorganic materials that are not specified as poisons by environmental standards can be selected for the recording layer.
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004509072A JP3810076B2 (ja) | 2002-06-03 | 2003-05-23 | 情報記録媒体 |
KR1020047019759A KR100709931B1 (ko) | 2002-06-03 | 2003-05-23 | 정보 기록 매체 및 그 제조 방법 |
US10/516,244 US7524612B2 (en) | 2002-06-03 | 2003-05-23 | Information recording medium and process for producing the same |
AU2003242414A AU2003242414A1 (en) | 2002-06-03 | 2003-05-23 | Information recording medium and process for producing the same |
DE60311804T DE60311804T2 (de) | 2002-06-03 | 2003-05-23 | Datenaufzeichnungsmedium und herstellungsverfahren hierfür |
EP03733031A EP1510355B1 (en) | 2002-06-03 | 2003-05-23 | Information recording medium and process for producing the same |
HK05104914A HK1072037A1 (en) | 2002-06-03 | 2005-06-13 | Information recording medium and process for producing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2002162047 | 2002-06-03 | ||
JP2002-162047 | 2002-06-03 | ||
JP2003024139 | 2003-01-31 | ||
JP2003-024139 | 2003-01-31 |
Publications (1)
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WO2003101750A1 true WO2003101750A1 (en) | 2003-12-11 |
Family
ID=29714331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2003/006439 WO2003101750A1 (en) | 2002-06-03 | 2003-05-23 | Information recording medium and process for producing the same |
Country Status (10)
Country | Link |
---|---|
US (1) | US7524612B2 (ja) |
EP (1) | EP1510355B1 (ja) |
JP (1) | JP3810076B2 (ja) |
KR (1) | KR100709931B1 (ja) |
CN (2) | CN1659041A (ja) |
AU (1) | AU2003242414A1 (ja) |
DE (1) | DE60311804T2 (ja) |
HK (1) | HK1072037A1 (ja) |
TW (1) | TWI236674B (ja) |
WO (1) | WO2003101750A1 (ja) |
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WO2006090587A1 (ja) * | 2005-02-23 | 2006-08-31 | Pioneer Corporation | 光記録媒体 |
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Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1650752A1 (en) * | 2003-07-24 | 2006-04-26 | TDK Corporation | Optical recording medium and process for producing the same, and data recording method and data reproducing method for optical recording medium |
EP1650752A4 (en) * | 2003-07-24 | 2008-08-13 | Tdk Corp | OPTICAL RECORDING MEDIUM AND PROCESS FOR ITS MANUFACTURE AND DATA COLLECTION PROCESS AND DATA PROCESSING METHOD FOR AN OPTICAL RECORDING MEDIUM |
US7381458B2 (en) | 2003-08-21 | 2008-06-03 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
WO2005018947A1 (ja) * | 2003-08-21 | 2005-03-03 | Mitsubishi Kagaku Media Co., Ltd. | 記録媒体 |
US7952984B2 (en) | 2004-04-22 | 2011-05-31 | Tdk Corporation | Optical recording medium and method of recording and reproducing of optical recording medium |
JP2006281751A (ja) * | 2004-04-28 | 2006-10-19 | Sony Corp | 追記型光記録媒体 |
JP2006018986A (ja) * | 2005-01-20 | 2006-01-19 | Pioneer Electronic Corp | 光記録媒体及びその製造方法 |
JPWO2006090587A1 (ja) * | 2005-02-23 | 2008-07-24 | パイオニア株式会社 | 光記録媒体 |
WO2006090587A1 (ja) * | 2005-02-23 | 2006-08-31 | Pioneer Corporation | 光記録媒体 |
JP4527766B2 (ja) * | 2005-02-23 | 2010-08-18 | パイオニア株式会社 | 光記録媒体 |
US7803445B2 (en) | 2005-02-23 | 2010-09-28 | Pioneer Corporation | Optical recording medium |
US8354155B2 (en) | 2008-11-12 | 2013-01-15 | Kobe Steel, Ltd. | Recording layer for optical information recording medium, optical information recording medium, and sputtering target |
WO2011034153A1 (ja) | 2009-09-18 | 2011-03-24 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、光情報記録媒体およびスパッタリングターゲット |
WO2011034188A1 (ja) | 2009-09-18 | 2011-03-24 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、光情報記録媒体およびスパッタリングターゲット |
US8530024B2 (en) | 2009-09-18 | 2013-09-10 | Kobe Steel, Ltd. | Recording layer for optical information recording medium, optical information recording medium, and sputtering target |
US8597757B2 (en) | 2009-09-18 | 2013-12-03 | Kobe Steel, Ltd. | Recording layer for optical information recording medium, optical information recording medium, and sputtering target |
Also Published As
Publication number | Publication date |
---|---|
TWI236674B (en) | 2005-07-21 |
CN1659041A (zh) | 2005-08-24 |
JP3810076B2 (ja) | 2006-08-16 |
KR100709931B1 (ko) | 2007-04-24 |
CN101320576A (zh) | 2008-12-10 |
JPWO2003101750A1 (ja) | 2005-09-29 |
US20050233247A1 (en) | 2005-10-20 |
EP1510355A4 (en) | 2005-07-13 |
US7524612B2 (en) | 2009-04-28 |
DE60311804D1 (de) | 2007-03-29 |
HK1072037A1 (en) | 2005-08-12 |
KR20050009734A (ko) | 2005-01-25 |
CN101320576B (zh) | 2012-07-11 |
TW200402711A (en) | 2004-02-16 |
DE60311804T2 (de) | 2007-10-31 |
EP1510355A1 (en) | 2005-03-02 |
EP1510355B1 (en) | 2007-02-14 |
AU2003242414A1 (en) | 2003-12-19 |
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