WO2003107442A3 - Electrode for p-type gallium nitride-based semiconductors - Google Patents

Electrode for p-type gallium nitride-based semiconductors Download PDF

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Publication number
WO2003107442A3
WO2003107442A3 PCT/US2003/019034 US0319034W WO03107442A3 WO 2003107442 A3 WO2003107442 A3 WO 2003107442A3 US 0319034 W US0319034 W US 0319034W WO 03107442 A3 WO03107442 A3 WO 03107442A3
Authority
WO
WIPO (PCT)
Prior art keywords
gallium nitride
layer
electrode
type gallium
metallic
Prior art date
Application number
PCT/US2003/019034
Other languages
French (fr)
Other versions
WO2003107442A2 (en
Inventor
Tchang-Hun Oh
Hong K Choi
Bor-Yeu Tsaur
John C C Fan
Shirong Liao
Jagdish Narayan
Original Assignee
Kopin Corp
Tchang-Hun Oh
Hong K Choi
Bor-Yeu Tsaur
John C C Fan
Shirong Liao
Jagdish Narayan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/187,466 external-priority patent/US20040000672A1/en
Priority claimed from US10/187,465 external-priority patent/US6734091B2/en
Priority claimed from US10/187,468 external-priority patent/US7002180B2/en
Application filed by Kopin Corp, Tchang-Hun Oh, Hong K Choi, Bor-Yeu Tsaur, John C C Fan, Shirong Liao, Jagdish Narayan filed Critical Kopin Corp
Priority to AU2003251539A priority Critical patent/AU2003251539A1/en
Publication of WO2003107442A2 publication Critical patent/WO2003107442A2/en
Publication of WO2003107442A3 publication Critical patent/WO2003107442A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Abstract

An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.
PCT/US2003/019034 2002-06-17 2003-06-17 Electrode for p-type gallium nitride-based semiconductors WO2003107442A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003251539A AU2003251539A1 (en) 2002-06-17 2003-06-17 Electrode for p-type gallium nitride-based semiconductors

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US38975002P 2002-06-17 2002-06-17
US60/389,750 2002-06-17
US39300802P 2002-06-28 2002-06-28
US10/187,466 US20040000672A1 (en) 2002-06-28 2002-06-28 High-power light-emitting diode structures
US60/393,008 2002-06-28
US10/187,468 2002-06-28
US10/187,465 2002-06-28
US10/187,465 US6734091B2 (en) 2002-06-28 2002-06-28 Electrode for p-type gallium nitride-based semiconductors
US10/187,468 US7002180B2 (en) 2002-06-28 2002-06-28 Bonding pad for gallium nitride-based light-emitting device
US10/187,466 2002-06-28

Publications (2)

Publication Number Publication Date
WO2003107442A2 WO2003107442A2 (en) 2003-12-24
WO2003107442A3 true WO2003107442A3 (en) 2004-09-02

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2003/019036 WO2003107444A2 (en) 2002-06-17 2003-06-17 Light-emitting diode device geometry
PCT/US2003/019034 WO2003107442A2 (en) 2002-06-17 2003-06-17 Electrode for p-type gallium nitride-based semiconductors
PCT/US2003/019035 WO2003107443A2 (en) 2002-06-17 2003-06-17 Bonding pad for gallium nitride-based light-emitting device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019036 WO2003107444A2 (en) 2002-06-17 2003-06-17 Light-emitting diode device geometry

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019035 WO2003107443A2 (en) 2002-06-17 2003-06-17 Bonding pad for gallium nitride-based light-emitting device

Country Status (4)

Country Link
US (1) US6847052B2 (en)
AU (3) AU2003251541A1 (en)
TW (2) TW200400608A (en)
WO (3) WO2003107444A2 (en)

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WO2003107444A2 (en) 2003-12-24
US6847052B2 (en) 2005-01-25

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