WO2003107444A3 - Light-emitting diode electrode geometry - Google Patents

Light-emitting diode electrode geometry Download PDF

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Publication number
WO2003107444A3
WO2003107444A3 PCT/US2003/019036 US0319036W WO03107444A3 WO 2003107444 A3 WO2003107444 A3 WO 2003107444A3 US 0319036 W US0319036 W US 0319036W WO 03107444 A3 WO03107444 A3 WO 03107444A3
Authority
WO
WIPO (PCT)
Prior art keywords
type semiconductor
semiconductor layer
region
bonding pad
light
Prior art date
Application number
PCT/US2003/019036
Other languages
French (fr)
Other versions
WO2003107444A2 (en
Inventor
John C C Fan
Tchang-Hun Oh
Hong K Choi
Jyh Chia Chen
Jagdish Narayan
Original Assignee
Kopin Corp
John C C Fan
Tchang-Hun Oh
Hong K Choi
Jyh Chia Chen
Jagdish Narayan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/187,466 external-priority patent/US20040000672A1/en
Priority claimed from US10/187,465 external-priority patent/US6734091B2/en
Priority claimed from US10/187,468 external-priority patent/US7002180B2/en
Application filed by Kopin Corp, John C C Fan, Tchang-Hun Oh, Hong K Choi, Jyh Chia Chen, Jagdish Narayan filed Critical Kopin Corp
Priority to AU2003251541A priority Critical patent/AU2003251541A1/en
Publication of WO2003107444A2 publication Critical patent/WO2003107444A2/en
Publication of WO2003107444A3 publication Critical patent/WO2003107444A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Abstract

A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.
PCT/US2003/019036 2002-06-17 2003-06-17 Light-emitting diode device geometry WO2003107444A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003251541A AU2003251541A1 (en) 2002-06-17 2003-06-17 Light-emitting diode electrode geometry

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US38975002P 2002-06-17 2002-06-17
US60/389,750 2002-06-17
US39300802P 2002-06-28 2002-06-28
US10/187,465 2002-06-28
US10/187,466 2002-06-28
US60/393,008 2002-06-28
US10/187,466 US20040000672A1 (en) 2002-06-28 2002-06-28 High-power light-emitting diode structures
US10/187,468 2002-06-28
US10/187,465 US6734091B2 (en) 2002-06-28 2002-06-28 Electrode for p-type gallium nitride-based semiconductors
US10/187,468 US7002180B2 (en) 2002-06-28 2002-06-28 Bonding pad for gallium nitride-based light-emitting device

Publications (2)

Publication Number Publication Date
WO2003107444A2 WO2003107444A2 (en) 2003-12-24
WO2003107444A3 true WO2003107444A3 (en) 2004-09-02

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2003/019034 WO2003107442A2 (en) 2002-06-17 2003-06-17 Electrode for p-type gallium nitride-based semiconductors
PCT/US2003/019035 WO2003107443A2 (en) 2002-06-17 2003-06-17 Bonding pad for gallium nitride-based light-emitting device
PCT/US2003/019036 WO2003107444A2 (en) 2002-06-17 2003-06-17 Light-emitting diode device geometry

Family Applications Before (2)

Application Number Title Priority Date Filing Date
PCT/US2003/019034 WO2003107442A2 (en) 2002-06-17 2003-06-17 Electrode for p-type gallium nitride-based semiconductors
PCT/US2003/019035 WO2003107443A2 (en) 2002-06-17 2003-06-17 Bonding pad for gallium nitride-based light-emitting device

Country Status (4)

Country Link
US (1) US6847052B2 (en)
AU (3) AU2003251539A1 (en)
TW (2) TW200400608A (en)
WO (3) WO2003107442A2 (en)

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Publication number Publication date
AU2003251541A8 (en) 2003-12-31
US20040077135A1 (en) 2004-04-22
AU2003251539A1 (en) 2003-12-31
WO2003107444A2 (en) 2003-12-24
WO2003107442A2 (en) 2003-12-24
AU2003251540A1 (en) 2003-12-31
WO2003107443A2 (en) 2003-12-24
US6847052B2 (en) 2005-01-25
WO2003107442A3 (en) 2004-09-02
TW200401462A (en) 2004-01-16
AU2003251541A1 (en) 2003-12-31
WO2003107443A3 (en) 2004-09-02
TW200400608A (en) 2004-01-01

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