WO2004010510A8 - Trench cut light emitting diodes and methods of fabricating same - Google Patents

Trench cut light emitting diodes and methods of fabricating same

Info

Publication number
WO2004010510A8
WO2004010510A8 PCT/US2003/022411 US0322411W WO2004010510A8 WO 2004010510 A8 WO2004010510 A8 WO 2004010510A8 US 0322411 W US0322411 W US 0322411W WO 2004010510 A8 WO2004010510 A8 WO 2004010510A8
Authority
WO
WIPO (PCT)
Prior art keywords
methods
light emitting
emitting diodes
fabricating same
cut light
Prior art date
Application number
PCT/US2003/022411
Other languages
French (fr)
Other versions
WO2004010510A2 (en
WO2004010510A3 (en
Inventor
Michael T Bruhns
Bradley E Williams
Jeff Lahaye
Peter Andrews
Original Assignee
Cree Inc
Michael T Bruhns
Bradley E Williams
Jeff Lahaye
Peter Andrews
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Michael T Bruhns, Bradley E Williams, Jeff Lahaye, Peter Andrews filed Critical Cree Inc
Priority to JP2005505523A priority Critical patent/JP4903434B2/en
Priority to EP03765692.3A priority patent/EP1523768B1/en
Priority to AU2003252005A priority patent/AU2003252005A1/en
Priority to CA002493853A priority patent/CA2493853A1/en
Publication of WO2004010510A2 publication Critical patent/WO2004010510A2/en
Publication of WO2004010510A3 publication Critical patent/WO2004010510A3/en
Publication of WO2004010510A8 publication Critical patent/WO2004010510A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
PCT/US2003/022411 2002-07-19 2003-07-11 Trench cut light emitting diodes and methods of fabricating same WO2004010510A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005505523A JP4903434B2 (en) 2002-07-19 2003-07-11 Trench cut type light emitting diode and method of manufacturing the same
EP03765692.3A EP1523768B1 (en) 2002-07-19 2003-07-11 Method of forming semiconductor devices
AU2003252005A AU2003252005A1 (en) 2002-07-19 2003-07-11 Trench cut light emitting diodes and methods of fabricating same
CA002493853A CA2493853A1 (en) 2002-07-19 2003-07-11 Trench cut light emitting diodes and methods of fabricating same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US39748802P 2002-07-19 2002-07-19
US60/397,488 2002-07-19
US41589802P 2002-10-03 2002-10-03
US60/415,898 2002-10-03
US10/610,329 2003-06-30
US10/610,329 US6995032B2 (en) 2002-07-19 2003-06-30 Trench cut light emitting diodes and methods of fabricating same

Publications (3)

Publication Number Publication Date
WO2004010510A2 WO2004010510A2 (en) 2004-01-29
WO2004010510A3 WO2004010510A3 (en) 2004-08-19
WO2004010510A8 true WO2004010510A8 (en) 2005-06-16

Family

ID=31999181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/022411 WO2004010510A2 (en) 2002-07-19 2003-07-11 Trench cut light emitting diodes and methods of fabricating same

Country Status (9)

Country Link
US (2) US6995032B2 (en)
EP (1) EP1523768B1 (en)
JP (1) JP4903434B2 (en)
KR (2) KR20110017467A (en)
CN (1) CN100375242C (en)
AU (1) AU2003252005A1 (en)
MY (1) MY138543A (en)
TW (1) TWI283491B (en)
WO (1) WO2004010510A2 (en)

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* Cited by examiner, † Cited by third party
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