WO2004027841A3 - Semiconductor memory cells - Google Patents

Semiconductor memory cells Download PDF

Info

Publication number
WO2004027841A3
WO2004027841A3 PCT/EP2003/010117 EP0310117W WO2004027841A3 WO 2004027841 A3 WO2004027841 A3 WO 2004027841A3 EP 0310117 W EP0310117 W EP 0310117W WO 2004027841 A3 WO2004027841 A3 WO 2004027841A3
Authority
WO
WIPO (PCT)
Prior art keywords
top electrode
memory cells
semiconductor memory
contact
capacitor
Prior art date
Application number
PCT/EP2003/010117
Other languages
French (fr)
Other versions
WO2004027841A2 (en
Inventor
Gerhard Beitel
Andreas Hilliger
Bum-Ki Moon
Nicolas Nagel
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to EP03797296A priority Critical patent/EP1540711A2/en
Publication of WO2004027841A2 publication Critical patent/WO2004027841A2/en
Publication of WO2004027841A3 publication Critical patent/WO2004027841A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Abstract

A capacitor with improved reliability is disclosed. The capacitor includes a bottom electrode, a top electrode, and an intermediate layer therebetween. A contact, which is electrically coupled to the top electrode, is provided. At least a portion of the contact is offset from the capacitor. By offsetting the contact from the top electrode, the etch damage to the top electrode is reduced, thereby reducing or eliminating the need for the anneal to repair the etch damage.
PCT/EP2003/010117 2002-09-19 2003-09-11 Semiconductor memory cells WO2004027841A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP03797296A EP1540711A2 (en) 2002-09-19 2003-09-11 Memory cells with improved reliability

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/065,127 2002-09-19
US10/065,127 US6621683B1 (en) 2002-09-19 2002-09-19 Memory cells with improved reliability

Publications (2)

Publication Number Publication Date
WO2004027841A2 WO2004027841A2 (en) 2004-04-01
WO2004027841A3 true WO2004027841A3 (en) 2004-08-12

Family

ID=27803636

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/010117 WO2004027841A2 (en) 2002-09-19 2003-09-11 Semiconductor memory cells

Country Status (3)

Country Link
US (2) US6621683B1 (en)
EP (1) EP1540711A2 (en)
WO (1) WO2004027841A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071506B2 (en) * 2003-09-05 2006-07-04 Infineon Technologies Ag Device for inhibiting hydrogen damage in ferroelectric capacitor devices
JP4105656B2 (en) * 2004-05-13 2008-06-25 株式会社東芝 Semiconductor device and manufacturing method thereof
JP4803995B2 (en) * 2004-06-28 2011-10-26 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
US7323424B2 (en) * 2004-06-29 2008-01-29 Micron Technology, Inc. Semiconductor constructions comprising cerium oxide and titanium oxide
JP4838026B2 (en) * 2006-03-27 2011-12-14 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789303A (en) * 1994-11-28 1998-08-04 Northern Telecom Limited Method of adding on chip capacitors to an integrated circuit
US6090697A (en) * 1997-06-30 2000-07-18 Texas Instruments Incorporated Etchstop for integrated circuits
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6358775B1 (en) * 1999-04-22 2002-03-19 Kuang Yao Hsia Multi-die semiconductor encapsulation method
US20020066921A1 (en) * 2000-10-26 2002-06-06 Arkalgud Sitaram Storage capacitor and associated contact-making structure and a method for fabricating the storage capacitor and the contact-making structure
US20020074661A1 (en) * 2000-12-20 2002-06-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5369296A (en) * 1990-07-24 1994-11-29 Ramtron International Corporation Semiconductor device having a ferroelectric film in a through-hole
WO1992006498A1 (en) * 1990-09-28 1992-04-16 Seiko Epson Corporation Semiconductor device
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5973342A (en) * 1996-04-25 1999-10-26 Rohm Co., Ltd. Semiconductor device having an iridium electrode
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
JPH10316495A (en) * 1997-05-16 1998-12-02 Sony Corp Ferroelectric and memory element, and their production
US5963466A (en) * 1998-04-13 1999-10-05 Radiant Technologies, Inc. Ferroelectric memory having a common plate electrode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789303A (en) * 1994-11-28 1998-08-04 Northern Telecom Limited Method of adding on chip capacitors to an integrated circuit
US6090697A (en) * 1997-06-30 2000-07-18 Texas Instruments Incorporated Etchstop for integrated circuits
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6358775B1 (en) * 1999-04-22 2002-03-19 Kuang Yao Hsia Multi-die semiconductor encapsulation method
US20020066921A1 (en) * 2000-10-26 2002-06-06 Arkalgud Sitaram Storage capacitor and associated contact-making structure and a method for fabricating the storage capacitor and the contact-making structure
US20020074661A1 (en) * 2000-12-20 2002-06-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2004027841A2 (en) 2004-04-01
US6891713B2 (en) 2005-05-10
US6621683B1 (en) 2003-09-16
EP1540711A2 (en) 2005-06-15
US20040057193A1 (en) 2004-03-25

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