WO2004038804A3 - Semiconductor device having a u-shaped gate structure - Google Patents

Semiconductor device having a u-shaped gate structure Download PDF

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Publication number
WO2004038804A3
WO2004038804A3 PCT/US2003/032663 US0332663W WO2004038804A3 WO 2004038804 A3 WO2004038804 A3 WO 2004038804A3 US 0332663 W US0332663 W US 0332663W WO 2004038804 A3 WO2004038804 A3 WO 2004038804A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
fin
gate structure
shaped gate
gate
Prior art date
Application number
PCT/US2003/032663
Other languages
French (fr)
Other versions
WO2004038804A2 (en
Inventor
Bin Yu
Shibly S Ahmed
Judy Xilin An
Srikanteswara Dakshina-Murthy
Zoran Krivokapic
Haihong Wang
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to DE10393565T priority Critical patent/DE10393565B4/en
Priority to AU2003282849A priority patent/AU2003282849A1/en
Priority to JP2004546873A priority patent/JP4745663B2/en
Priority to GB0506579A priority patent/GB2409575B/en
Publication of WO2004038804A2 publication Critical patent/WO2004038804A2/en
Publication of WO2004038804A3 publication Critical patent/WO2004038804A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants

Abstract

A double-gate semiconductor device (100) includes a substrate (110), an insulating layer (120), a fin (210) and agate (510). The insulating layer (120) is formed on the substrate (110) and the gate (510) is formed on the insulating layer (120). The fin (210) has a number of side surfaces, a top surface and a bottom surface. The bottom surface and at least a portion of the side surfaces of the fin (210) are surrounded by the gate (510). The gate material (510) surrounding the fin (210) has a U-shaped cross-section at a channel region of the semiconductor device (100).
PCT/US2003/032663 2002-10-22 2003-10-14 Semiconductor device having a u-shaped gate structure WO2004038804A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10393565T DE10393565B4 (en) 2002-10-22 2003-10-14 Method for producing a semiconductor element with a U-shaped gate structure
AU2003282849A AU2003282849A1 (en) 2002-10-22 2003-10-14 Semiconductor device having a u-shaped gate structure
JP2004546873A JP4745663B2 (en) 2002-10-22 2003-10-14 Method for forming a double gate Fin-FET device
GB0506579A GB2409575B (en) 2002-10-22 2003-10-14 Semiconductor device having a u-shaped gate structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/274,867 US6833588B2 (en) 2002-10-22 2002-10-22 Semiconductor device having a U-shaped gate structure
US10/274,867 2002-10-22

Publications (2)

Publication Number Publication Date
WO2004038804A2 WO2004038804A2 (en) 2004-05-06
WO2004038804A3 true WO2004038804A3 (en) 2004-06-10

Family

ID=32093167

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/032663 WO2004038804A2 (en) 2002-10-22 2003-10-14 Semiconductor device having a u-shaped gate structure

Country Status (9)

Country Link
US (2) US6833588B2 (en)
JP (1) JP4745663B2 (en)
KR (1) KR100993937B1 (en)
CN (1) CN100448023C (en)
AU (1) AU2003282849A1 (en)
DE (1) DE10393565B4 (en)
GB (1) GB2409575B (en)
TW (1) TWI321336B (en)
WO (1) WO2004038804A2 (en)

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US7179692B2 (en) 2007-02-20
KR100993937B1 (en) 2010-11-12
KR20050057663A (en) 2005-06-16
CN100448023C (en) 2008-12-31
WO2004038804A2 (en) 2004-05-06
US6833588B2 (en) 2004-12-21
TW200414324A (en) 2004-08-01
JP4745663B2 (en) 2011-08-10
GB0506579D0 (en) 2005-05-04
JP2006504268A (en) 2006-02-02
DE10393565T5 (en) 2005-09-01
CN1708855A (en) 2005-12-14
DE10393565B4 (en) 2010-07-15
AU2003282849A1 (en) 2004-05-13
GB2409575B (en) 2006-02-15
US20050006666A1 (en) 2005-01-13
TWI321336B (en) 2010-03-01
GB2409575A (en) 2005-06-29
US20040075121A1 (en) 2004-04-22

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