WO2004038916A3 - Micro-electromechanical varactor with enhanced tuning range - Google Patents

Micro-electromechanical varactor with enhanced tuning range Download PDF

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Publication number
WO2004038916A3
WO2004038916A3 PCT/EP2003/012399 EP0312399W WO2004038916A3 WO 2004038916 A3 WO2004038916 A3 WO 2004038916A3 EP 0312399 W EP0312399 W EP 0312399W WO 2004038916 A3 WO2004038916 A3 WO 2004038916A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabricated
substrate
electrodes
varactor
electromechanical
Prior art date
Application number
PCT/EP2003/012399
Other languages
French (fr)
Other versions
WO2004038916A2 (en
Inventor
Anil K Chinthakindi
Robert A Groves
Kenneth J Stein
Seshadri Subbanna
Richard P Volant
Original Assignee
Ibm
Ibm France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Ibm France filed Critical Ibm
Priority to EP03769489A priority Critical patent/EP1556949A2/en
Priority to JP2004546027A priority patent/JP4732754B2/en
Priority to AU2003278176A priority patent/AU2003278176A1/en
Publication of WO2004038916A2 publication Critical patent/WO2004038916A2/en
Publication of WO2004038916A3 publication Critical patent/WO2004038916A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01Details
    • H01G5/011Electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/01Switches
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/924Active solid-state devices, e.g. transistors, solid-state diodes with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap

Abstract

A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the 'chip side' while the fixed bottom electrode is fabricated on a separated substrate 'carrier side'. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and 'flipped over', aligned and joined to the 'carrier' substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
PCT/EP2003/012399 2002-10-22 2003-09-18 Micro-electromechanical varactor with enhanced tuning range WO2004038916A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03769489A EP1556949A2 (en) 2002-10-22 2003-09-18 Micro-electromechanical varactor with enhanced tuning range
JP2004546027A JP4732754B2 (en) 2002-10-22 2003-09-18 Electromechanical micro variable capacitance diode with extended tuning range
AU2003278176A AU2003278176A1 (en) 2002-10-22 2003-09-18 Micro-electromechanical varactor with enhanced tuning range

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/278,211 2002-10-22
US10/278,211 US6661069B1 (en) 2002-10-22 2002-10-22 Micro-electromechanical varactor with enhanced tuning range

Publications (2)

Publication Number Publication Date
WO2004038916A2 WO2004038916A2 (en) 2004-05-06
WO2004038916A3 true WO2004038916A3 (en) 2004-08-12

Family

ID=29711735

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/012399 WO2004038916A2 (en) 2002-10-22 2003-09-18 Micro-electromechanical varactor with enhanced tuning range

Country Status (8)

Country Link
US (2) US6661069B1 (en)
EP (1) EP1556949A2 (en)
JP (1) JP4732754B2 (en)
KR (1) KR100991965B1 (en)
CN (1) CN100487837C (en)
AU (1) AU2003278176A1 (en)
TW (1) TWI232500B (en)
WO (1) WO2004038916A2 (en)

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WO2008103632A2 (en) 2007-02-20 2008-08-28 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of mems
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7499257B2 (en) 2007-06-22 2009-03-03 Motorola, Inc. Micro-electro-mechanical system varactor
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US7989922B2 (en) * 2008-02-08 2011-08-02 International Business Machines Corporation Highly tunable metal-on-semiconductor trench varactor
US7473618B1 (en) 2008-04-22 2009-01-06 International Business Machines Corporation Temporary structure to reduce stress and warpage in a flip chip organic package
JP5133814B2 (en) 2008-08-13 2013-01-30 ラピスセミコンダクタ株式会社 Variable capacitance element
JP2010199214A (en) * 2009-02-24 2010-09-09 Oki Semiconductor Co Ltd Mems tunable capacitor
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US8436698B2 (en) * 2009-11-02 2013-05-07 Harris Corporation MEMS-based tunable filter
US8373522B2 (en) * 2010-02-03 2013-02-12 Harris Corporation High accuracy MEMS-based varactors
US20110198202A1 (en) * 2010-02-18 2011-08-18 Harris Corporation Mems-based ultra-low power devices
US8644896B1 (en) 2010-12-03 2014-02-04 Physical Optics Corporation Tunable notch filter including ring resonators having a MEMS capacitor and an attenuator
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US8940570B2 (en) 2012-01-03 2015-01-27 International Business Machines Corporation Micro-electro-mechanical system (MEMS) structures and design structures
JP5798094B2 (en) * 2012-08-10 2015-10-21 日本電信電話株式会社 Actuator
US9093975B2 (en) 2013-08-19 2015-07-28 Harris Corporation Microelectromechanical systems comprising differential inductors and methods for making the same
US9172352B2 (en) 2013-08-19 2015-10-27 Harris Corporation Integrated microelectromechanical system devices and methods for making the same
US9136822B2 (en) 2013-08-19 2015-09-15 Harris Corporation Microelectromechanical system with a micro-scale spring suspension system and methods for making the same
US9123493B2 (en) 2014-01-23 2015-09-01 Harris Corporation Microelectromechanical switches for steering of RF signals
CN103943419A (en) * 2014-04-15 2014-07-23 苏州锟恩电子科技有限公司 RF MEMS switch with upper suspension beam
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Also Published As

Publication number Publication date
AU2003278176A8 (en) 2004-05-13
EP1556949A2 (en) 2005-07-27
US6696343B1 (en) 2004-02-24
AU2003278176A1 (en) 2004-05-13
KR100991965B1 (en) 2010-11-04
TWI232500B (en) 2005-05-11
CN100487837C (en) 2009-05-13
US6661069B1 (en) 2003-12-09
TW200416833A (en) 2004-09-01
KR20050084819A (en) 2005-08-29
JP2006518926A (en) 2006-08-17
JP4732754B2 (en) 2011-07-27
WO2004038916A2 (en) 2004-05-06
CN1689227A (en) 2005-10-26

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