WO2004042773A3 - Resonant structure with spatially distinct plasma secondaries using a single generator and switching elements - Google Patents

Resonant structure with spatially distinct plasma secondaries using a single generator and switching elements Download PDF

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Publication number
WO2004042773A3
WO2004042773A3 PCT/US2003/032384 US0332384W WO2004042773A3 WO 2004042773 A3 WO2004042773 A3 WO 2004042773A3 US 0332384 W US0332384 W US 0332384W WO 2004042773 A3 WO2004042773 A3 WO 2004042773A3
Authority
WO
WIPO (PCT)
Prior art keywords
enclosure
process region
plasma
openings
source power
Prior art date
Application number
PCT/US2003/032384
Other languages
French (fr)
Other versions
WO2004042773A2 (en
Inventor
Hiroji Hanawa
Kartik Ramaswamy
Kenneth S Collins
Andrew Nguyen
Gonzalo Antonio Monroy
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP03810777A priority Critical patent/EP1561234B1/en
Priority to DE60324958T priority patent/DE60324958D1/en
Publication of WO2004042773A2 publication Critical patent/WO2004042773A2/en
Publication of WO2004042773A3 publication Critical patent/WO2004042773A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Abstract

A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
PCT/US2003/032384 2002-10-30 2003-10-10 Resonant structure with spatially distinct plasma secondaries using a single generator and switching elements WO2004042773A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03810777A EP1561234B1 (en) 2002-10-30 2003-10-10 Spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
DE60324958T DE60324958D1 (en) 2002-10-30 2003-10-10 RESONANCE STRUCTURE WITH SPATIALLY SEPARATED PLASMA SEERATORS AND SWITCH ELEMENTS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/285,092 US7430984B2 (en) 2000-08-11 2002-10-30 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US10/285,092 2002-10-30

Publications (2)

Publication Number Publication Date
WO2004042773A2 WO2004042773A2 (en) 2004-05-21
WO2004042773A3 true WO2004042773A3 (en) 2004-07-29

Family

ID=32312042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/032384 WO2004042773A2 (en) 2002-10-30 2003-10-10 Resonant structure with spatially distinct plasma secondaries using a single generator and switching elements

Country Status (7)

Country Link
US (1) US7430984B2 (en)
EP (1) EP1561234B1 (en)
KR (1) KR101038165B1 (en)
CN (1) CN100466155C (en)
DE (1) DE60324958D1 (en)
TW (1) TWI338537B (en)
WO (1) WO2004042773A2 (en)

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US20060027329A1 (en) * 2004-08-09 2006-02-09 Sinha Ashok K Multi-frequency plasma enhanced process chamber having a torroidal plasma source
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US7578258B2 (en) * 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US20130017315A1 (en) * 2011-07-15 2013-01-17 Applied Materials, Inc. Methods and apparatus for controlling power distribution in substrate processing systems
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US9039911B2 (en) * 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9082591B2 (en) * 2012-04-24 2015-07-14 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
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US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
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US9284210B2 (en) 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US9533909B2 (en) 2014-03-31 2017-01-03 Corning Incorporated Methods and apparatus for material processing using atmospheric thermal plasma reactor
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WO2016187166A1 (en) 2015-05-21 2016-11-24 Plasmability, Llc Toroidal plasma processing apparatus with a shaped workpiece holder
US10428426B2 (en) * 2016-04-22 2019-10-01 Applied Materials, Inc. Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime
CN110246737B (en) * 2018-03-08 2021-07-06 长鑫存储技术有限公司 Etching method of semiconductor wafer structure
KR20220107521A (en) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 Reactor, process processing apparatus including the same and method for manufacturing reactor

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Also Published As

Publication number Publication date
TWI338537B (en) 2011-03-01
KR101038165B1 (en) 2011-05-31
WO2004042773A2 (en) 2004-05-21
DE60324958D1 (en) 2009-01-08
TW200421946A (en) 2004-10-16
US7430984B2 (en) 2008-10-07
EP1561234A2 (en) 2005-08-10
CN100466155C (en) 2009-03-04
KR20050084625A (en) 2005-08-26
EP1561234B1 (en) 2008-11-26
US20030047449A1 (en) 2003-03-13
CN1723529A (en) 2006-01-18

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