WO2004049432A3 - Sealing porous structures - Google Patents

Sealing porous structures Download PDF

Info

Publication number
WO2004049432A3
WO2004049432A3 PCT/US2003/040061 US0340061W WO2004049432A3 WO 2004049432 A3 WO2004049432 A3 WO 2004049432A3 US 0340061 W US0340061 W US 0340061W WO 2004049432 A3 WO2004049432 A3 WO 2004049432A3
Authority
WO
WIPO (PCT)
Prior art keywords
self
pores
structures
ald
saturating
Prior art date
Application number
PCT/US2003/040061
Other languages
French (fr)
Other versions
WO2004049432A2 (en
Inventor
Ivo Raaijmakers
Pekka J Soininen
Ernst Granneman
Suvi Haukka
Kai-Erik Elers
Marco Tuominen
Hessel Sprey
Herbert Terhorst
Menso Hendriks
Original Assignee
Asm Inc
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Inc, Asm Int filed Critical Asm Inc
Priority to AU2003300972A priority Critical patent/AU2003300972A1/en
Priority to DE10393738T priority patent/DE10393738T5/en
Priority to JP2004554778A priority patent/JP4825422B2/en
Publication of WO2004049432A2 publication Critical patent/WO2004049432A2/en
Publication of WO2004049432A3 publication Critical patent/WO2004049432A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.
PCT/US2003/040061 2002-11-22 2003-11-21 Sealing porous structures WO2004049432A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003300972A AU2003300972A1 (en) 2002-11-22 2003-11-21 Sealing porous structures
DE10393738T DE10393738T5 (en) 2002-11-22 2003-11-21 Sealing of porous structures
JP2004554778A JP4825422B2 (en) 2002-11-22 2003-11-21 Method for manufacturing an integrated circuit comprising a porous insulating layer having a plurality of trenches extending from an upper surface of the insulating layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/303,293 US6759325B2 (en) 2000-05-15 2002-11-22 Sealing porous structures
US10/303,293 2002-11-22

Publications (2)

Publication Number Publication Date
WO2004049432A2 WO2004049432A2 (en) 2004-06-10
WO2004049432A3 true WO2004049432A3 (en) 2004-12-02

Family

ID=32392417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040061 WO2004049432A2 (en) 2002-11-22 2003-11-21 Sealing porous structures

Country Status (5)

Country Link
US (1) US6759325B2 (en)
JP (1) JP4825422B2 (en)
AU (1) AU2003300972A1 (en)
DE (1) DE10393738T5 (en)
WO (1) WO2004049432A2 (en)

Families Citing this family (151)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6759325B2 (en) * 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
JP3920590B2 (en) * 2000-06-19 2007-05-30 株式会社東芝 Manufacturing method of semiconductor device
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
JP2005518088A (en) * 2001-07-16 2005-06-16 アプライド　マテリアルズ　インコーポレイテッド Formation of tungsten composite film
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
KR100465063B1 (en) * 2002-04-01 2005-01-06 주식회사 하이닉스반도체 Method for manufacturing metal interconnection layer of semiconductor device
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20040009665A1 (en) * 2002-06-04 2004-01-15 Applied Materials, Inc. Deposition of copper films
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
JP2004103971A (en) * 2002-09-12 2004-04-02 Hitachi High-Technologies Corp Method and apparatus for damascene processing, and damascene structure
US7311862B2 (en) * 2002-10-28 2007-12-25 Cabot Microelectronics Corporation Method for manufacturing microporous CMP materials having controlled pore size
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US7186656B2 (en) * 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
JP4823690B2 (en) * 2003-06-16 2011-11-24 東京エレクトロン株式会社 Film-forming method and semiconductor device manufacturing method
KR100513801B1 (en) * 2003-07-24 2005-09-13 주식회사 하이닉스반도체 Method for manufacturing semiconductor device with flowable dielectric for gapfilling
JP2005050903A (en) * 2003-07-30 2005-02-24 Toshiba Corp Semiconductor device and its manufacturing method
KR20060054387A (en) * 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 Surface preparation prior to deposition on germanium
US7052990B2 (en) * 2003-09-03 2006-05-30 Infineon Technologies Ag Sealed pores in low-k material damascene conductive structures
US7256499B1 (en) * 2003-10-02 2007-08-14 Advanced Micro Devices, Inc. Ultra low dielectric constant integrated circuit system
US7018917B2 (en) * 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
US7157373B2 (en) 2003-12-11 2007-01-02 Infineon Technologies Ag Sidewall sealing of porous dielectric materials
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20050287826A1 (en) * 2004-06-29 2005-12-29 Abell Thomas J Method of sealing low-k dielectrics and devices made thereby
US7238382B2 (en) * 2004-07-30 2007-07-03 Tokyo Electron Limited Method and system for characterizing porous materials
TW200611990A (en) * 2004-08-16 2006-04-16 Du Pont Atomic layer deposition of copper using surface-activating agents
US7223704B2 (en) 2004-08-27 2007-05-29 Infineon Technologies Ag Repair of carbon depletion in low-k dielectric films
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7163900B2 (en) * 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing
TW200634982A (en) * 2005-02-22 2006-10-01 Asm Inc Plasma pre-treating surfaces for atomic layer deposition
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US7666773B2 (en) * 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7256131B2 (en) * 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US7736697B2 (en) * 2005-08-08 2010-06-15 E. I. Du Pont De Nemours And Company Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes
US7776394B2 (en) * 2005-08-08 2010-08-17 E.I. Du Pont De Nemours And Company Atomic layer deposition of metal-containing films using surface-activating agents
US7394154B2 (en) * 2005-09-13 2008-07-01 International Business Machines Corporation Embedded barrier for dielectric encapsulation
EP1764837B1 (en) * 2005-09-14 2009-08-05 STMicroelectronics S.r.l. Method of manufacturing a phase change memory device having a uniform heater height
US7785658B2 (en) * 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US20070082130A1 (en) * 2005-10-07 2007-04-12 Asm Japan K.K. Method for foming metal wiring structure
TW200737307A (en) 2005-11-04 2007-10-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7960838B2 (en) * 2005-11-18 2011-06-14 United Microelectronics Corp. Interconnect structure
US7564136B2 (en) * 2006-02-24 2009-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integration scheme for Cu/low-k interconnects
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
JP5045000B2 (en) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 Film forming apparatus, gas supply apparatus, film forming method, and storage medium
KR100705936B1 (en) * 2006-06-30 2007-04-13 주식회사 하이닉스반도체 Method for forming bitline of semiconductor device
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US7611751B2 (en) * 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
KR100806128B1 (en) * 2006-12-11 2008-02-22 삼성전자주식회사 Metal wiring structure for a semiconductor device and method of forming the same
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
KR101544198B1 (en) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 Method of depositing ruthenium film
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR101423670B1 (en) * 2008-01-15 2014-07-28 삼성디스플레이 주식회사 Method for manufacturing metal line and method for manufacturing display panel having the metal line
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
TWI529808B (en) 2010-06-10 2016-04-11 Ａｓｍ國際股份有限公司 Method for selectively depositing film on substrate
JP5567926B2 (en) * 2010-07-29 2014-08-06 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
US20140273463A1 (en) * 2013-03-15 2014-09-18 GlobalFoundries, Inc. Methods for fabricating integrated circuits that include a sealed sidewall in a porous low-k dielectric layer
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
US9502365B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Opening in a multilayer polymeric dielectric layer without delamination
TWI739285B (en) 2014-02-04 2021-09-11 荷蘭商Ａｓｍ Ｉｐ控股公司 Selective deposition of metals, metal oxides, and dielectrics
US9214334B2 (en) * 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9613852B2 (en) * 2014-03-21 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method making the same
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9793108B2 (en) * 2015-06-25 2017-10-17 Applied Material, Inc. Interconnect integration for sidewall pore seal and via cleanliness
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10343186B2 (en) 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
US20170117144A1 (en) * 2015-10-22 2017-04-27 Applied Materials, Inc. Chemical Infiltration into Porous Dielectric Films
US9981286B2 (en) 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
KR102182550B1 (en) 2016-04-18 2020-11-25 에이에스엠 아이피 홀딩 비.브이. Method of forming induced self-assembly layer on a substrate
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US9805974B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Selective deposition of metallic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
JP2018107227A (en) * 2016-12-26 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device, method of manufacturing the same, and solid-state imaging element
US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
CN110651064B (en) 2017-05-16 2022-08-16 Asm Ip 控股有限公司 Selective PEALD of oxides on dielectrics
US9947582B1 (en) 2017-06-02 2018-04-17 Asm Ip Holding B.V. Processes for preventing oxidation of metal thin films
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP7146690B2 (en) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． Selective layer formation using deposition and removal
JP2020056104A (en) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． Selective passivation and selective deposition
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
KR102095710B1 (en) * 2019-11-05 2020-04-01 주식회사 유진테크 머티리얼즈 Method of depositing thin films using protective material
TW202140832A (en) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Selective deposition of silicon oxide on metal surfaces
TW202140833A (en) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Selective deposition of silicon oxide on dielectric surfaces relative to metal surfaces
TW202204658A (en) 2020-03-30 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Simultaneous selective deposition of two different materials on two different surfaces
CN112614855A (en) * 2020-12-07 2021-04-06 长江存储科技有限责任公司 Preparation method of semiconductor etched hole inner film layer and three-dimensional memory structure
KR102366555B1 (en) * 2021-01-05 2022-02-23 주식회사 이지티엠 Method of selective formation of thin film
JP2023055111A (en) * 2021-10-05 2023-04-17 東京エレクトロン株式会社 Method and device for forming titanium film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010054769A1 (en) * 2000-05-15 2001-12-27 Ivo Raaijmakers Protective layers prior to alternating layer deposition
US20020055256A1 (en) * 2000-11-09 2002-05-09 Qing-Tang Jiang Reducing copper line resistivity by smoothing trench and via sidewalls
WO2003005438A2 (en) * 2001-07-02 2003-01-16 Dow Corning Corporation Improved metal barrier behavior by sic:h deposition on porous materials
US20030143839A1 (en) * 2000-05-15 2003-07-31 Ivo Raaijmakers Sealing porous structures

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (en) 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
FI57975C (en) 1979-02-28 1980-11-10 Lohja Ab Oy OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY
US5769950A (en) 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4747367A (en) 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5071670A (en) 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
FI100409B (en) 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
FI97731C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
JPH08213343A (en) 1995-01-31 1996-08-20 Sony Corp Semiconductor device and manufacture thereof
JPH0922896A (en) 1995-07-07 1997-01-21 Toshiba Corp Method of selective forming of metal film
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
KR100236069B1 (en) 1996-12-26 1999-12-15 김영환 Capacitor and manufacturing method thereof
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
JPH10256363A (en) * 1997-03-13 1998-09-25 Sony Corp Semiconductor device and its manufacture
US6351039B1 (en) * 1997-05-28 2002-02-26 Texas Instruments Incorporated Integrated circuit dielectric and method
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
KR100275738B1 (en) 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
US6144050A (en) 1998-08-20 2000-11-07 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with strontium barrier film and process for making same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
US6077775A (en) 1998-08-20 2000-06-20 The United States Of America As Represented By The Secretary Of The Navy Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
KR100287180B1 (en) * 1998-09-17 2001-04-16 윤종용 Method for manufacturing semiconductor device including metal interconnection formed using interface control layer
KR100327328B1 (en) * 1998-10-13 2002-05-09 윤종용 Method for forming dielectric layer of capacitor having partially different thickness in the layer
JP2000150647A (en) 1998-11-11 2000-05-30 Sony Corp Wiring structure and its manufacture
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010054769A1 (en) * 2000-05-15 2001-12-27 Ivo Raaijmakers Protective layers prior to alternating layer deposition
US20030143839A1 (en) * 2000-05-15 2003-07-31 Ivo Raaijmakers Sealing porous structures
US20020055256A1 (en) * 2000-11-09 2002-05-09 Qing-Tang Jiang Reducing copper line resistivity by smoothing trench and via sidewalls
WO2003005438A2 (en) * 2001-07-02 2003-01-16 Dow Corning Corporation Improved metal barrier behavior by sic:h deposition on porous materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BESLING ET AL.: "Atomic Layer Deposition of Barriers for Interconnect", PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 3 June 2002 (2002-06-03) - 5 June 2002 (2002-06-05), pages 288 - 291, XP001191093 *
BEYER G ET AL: "Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 64, no. 1-4, October 2002 (2002-10-01), pages 233 - 245, XP004381191, ISSN: 0167-9317 *
SATTA A ET AL: "Enhancement of ALCVD TiN growth on Si-O-C and alpha-SiC:H films by O2-based plasma treatments", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 60, no. 1-2, January 2002 (2002-01-01), pages 59 - 69, XP004313048, ISSN: 0167-9317 *
TRAVALY Y ET AL: "Impact of material/process interactions on the properties of a porous CVD-O3 low-k dielectric film", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 64, no. 1-4, October 2002 (2002-10-01), pages 367 - 374, XP004381206, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
JP2006507677A (en) 2006-03-02
US20030143839A1 (en) 2003-07-31
JP4825422B2 (en) 2011-11-30
US6759325B2 (en) 2004-07-06
AU2003300972A1 (en) 2004-06-18
WO2004049432A2 (en) 2004-06-10
DE10393738T5 (en) 2006-01-12
AU2003300972A8 (en) 2004-06-18

Similar Documents

Publication Publication Date Title
WO2004049432A3 (en) Sealing porous structures
TW200634982A (en) Plasma pre-treating surfaces for atomic layer deposition
JP5554806B2 (en) Method for depositing a layer on a substrate with a plurality of openings
TW478105B (en) Conformal lining layers for damascene metallization
KR20220132493A (en) Method of selective deposition for forming fully self-aligned vias
JP2017505548A (en) Flowable carbon film by FCVD hardware using remote plasma PECVD
TWI478281B (en) Interconnect structure and method of manufacturing a damascene structure
TW201715071A (en) Method for forming aluminum nitride-based film by PEALD
US7928006B2 (en) Structure for a semiconductor device and a method of manufacturing the same
TWI576459B (en) Methods for depositing manganese and manganese nitrides
WO2003029515A3 (en) Formation of composite tungsten films
JP2003531474A5 (en) Conformal lining layer for damascene metallization
WO2003026005A3 (en) Formation of refractory metal nitrides using chemisorption techniques
WO2004064147A3 (en) Integration of ald/cvd barriers with porous low k materials
WO2006037933A3 (en) Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
CN108206158A (en) The Apparatus and method for of cobalt filling metallization
TWI257144B (en) Method of fabricating inlaid structure
WO2008011403A3 (en) New scheme for copper filling in vias and trenches
TW200929384A (en) Vapor deposition of tungsten materials
TW365047B (en) Manufacturing method for simultaneously forming trenches of different depths
TW200618072A (en) Methods for forming semiconductor devices with tungsten contacts
JP2004111924A (en) Method for forming metal film, semiconductor device, and method for manufacturing same
WO2008010941A3 (en) Improved methods for atomic layer deposition
WO2005031841A3 (en) Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
US20100210116A1 (en) Methods of forming vapor thin films and semiconductor integrated circuit devices including the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004554778

Country of ref document: JP

122 Ep: pct application non-entry in european phase