WO2004054078A1 - Integrated half-bridge power circuit - Google Patents
Integrated half-bridge power circuit Download PDFInfo
- Publication number
- WO2004054078A1 WO2004054078A1 PCT/IB2003/005806 IB0305806W WO2004054078A1 WO 2004054078 A1 WO2004054078 A1 WO 2004054078A1 IB 0305806 W IB0305806 W IB 0305806W WO 2004054078 A1 WO2004054078 A1 WO 2004054078A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fet
- recited
- ldmos
- down converter
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000001360 synchronised effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 17
- 230000008901 benefit Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03775731A EP1573889A1 (en) | 2002-12-10 | 2003-12-08 | Integrated half-bridge power circuit |
US10/537,575 US7459750B2 (en) | 2002-12-10 | 2003-12-08 | Integrated half-bridge power circuit |
AU2003283750A AU2003283750A1 (en) | 2002-12-10 | 2003-12-08 | Integrated half-bridge power circuit |
JP2004558281A JP2006509360A (en) | 2002-12-10 | 2003-12-08 | Integrated half-bridge power circuit |
US12/260,064 US20090079272A1 (en) | 2002-12-10 | 2008-10-28 | Integrated Half-Bridge Power Circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43230202P | 2002-12-10 | 2002-12-10 | |
US60/432,302 | 2002-12-10 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/260,064 Division US20090079272A1 (en) | 2002-12-10 | 2008-10-28 | Integrated Half-Bridge Power Circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004054078A1 true WO2004054078A1 (en) | 2004-06-24 |
Family
ID=32507891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2003/005806 WO2004054078A1 (en) | 2002-12-10 | 2003-12-08 | Integrated half-bridge power circuit |
Country Status (7)
Country | Link |
---|---|
US (2) | US7459750B2 (en) |
EP (1) | EP1573889A1 (en) |
JP (1) | JP2006509360A (en) |
KR (1) | KR20050085461A (en) |
CN (1) | CN1723601A (en) |
AU (1) | AU2003283750A1 (en) |
WO (1) | WO2004054078A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8148815B2 (en) | 2008-10-13 | 2012-04-03 | Intersil Americas, Inc. | Stacked field effect transistor configurations |
US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
JP2013106371A (en) * | 2011-11-10 | 2013-05-30 | Rohm Co Ltd | Overcurrent protection circuit and switching power supply device using the same |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1723601A (en) * | 2002-12-10 | 2006-01-18 | 皇家飞利浦电子股份有限公司 | Integrated half-bridge power circuit |
DE102006037118B3 (en) * | 2006-08-07 | 2008-03-13 | Infineon Technologies Ag | Semiconductor switching module for vehicle electrical systems with a plurality of semiconductor chips, use of such a semiconductor switching module and method for producing the same |
KR20090025757A (en) * | 2007-09-07 | 2009-03-11 | 주식회사 동부하이텍 | Dmos transistor and fabrication method thereof |
KR100953333B1 (en) * | 2007-11-05 | 2010-04-20 | 주식회사 동부하이텍 | Semiconductor device having vertical and horizontal type gates and method for fabricating the same |
US20100009507A1 (en) * | 2008-07-10 | 2010-01-14 | Krutsick Thomas J | Method of constructing cmos device tubs |
EP2202794A3 (en) * | 2008-12-23 | 2012-07-04 | Intersil Americas Inc. | Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method |
KR101522530B1 (en) * | 2008-12-24 | 2015-05-26 | 주식회사 동부하이텍 | Apparatus of protecting Semiconductor device from the Electro Static Discharge, and method for manufactruing the same |
JP5610565B2 (en) * | 2009-10-06 | 2014-10-22 | ローム株式会社 | Step-down switching regulator and semiconductor integrated circuit device used therefor |
CN102054774B (en) * | 2009-10-28 | 2012-11-21 | 无锡华润上华半导体有限公司 | VDMOS (vertical double diffused metal oxide semiconductor) transistor compatible LDMOS (laterally diffused metal oxide semiconductor) transistor and manufacturing method thereof |
US8115260B2 (en) * | 2010-01-06 | 2012-02-14 | Fairchild Semiconductor Corporation | Wafer level stack die package |
TWI456738B (en) | 2010-09-02 | 2014-10-11 | Sinopower Semiconductor Inc | Semiconductor device integrated with converter and package structure thereof |
CN103548132B (en) * | 2011-06-30 | 2016-10-26 | 富士电机株式会社 | The manufacture method of semiconductor device |
US8377756B1 (en) | 2011-07-26 | 2013-02-19 | General Electric Company | Silicon-carbide MOSFET cell structure and method for forming same |
US9059306B2 (en) * | 2011-10-11 | 2015-06-16 | Maxim Integrated Products, Inc. | Semiconductor device having DMOS integration |
US9035627B2 (en) * | 2012-06-13 | 2015-05-19 | Intel Mobile Communications GmbH | Switched mode power supply employing first and second feedback signals and a method of operating thereof |
JP5537683B2 (en) * | 2013-01-21 | 2014-07-02 | 株式会社東芝 | Semiconductor device |
JP2014170831A (en) | 2013-03-04 | 2014-09-18 | Seiko Epson Corp | Circuit device and electronic apparatus |
US9502401B2 (en) | 2013-08-16 | 2016-11-22 | Infineon Technologies Austria Ag | Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing |
DE102014202030A1 (en) * | 2014-02-05 | 2015-08-06 | Robert Bosch Gmbh | Rectifier circuit, electronic component, generator and method for operating a rectifier circuit |
CN116508135A (en) * | 2020-12-04 | 2023-07-28 | 安普莱西娅有限责任公司 | LDMOS with self-aligned body and mixed source |
CN112671206B (en) * | 2020-12-04 | 2022-09-20 | 杰华特微电子股份有限公司 | Switching power supply and manufacturing method thereof |
TWI777525B (en) * | 2021-01-08 | 2022-09-11 | 立錡科技股份有限公司 | Switch capable of decreasing parasitic inductance |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5585294A (en) * | 1994-10-14 | 1996-12-17 | Texas Instruments Incorporated | Method of fabricating lateral double diffused MOS (LDMOS) transistors |
US6288424B1 (en) * | 1998-09-23 | 2001-09-11 | U.S. Philips Corporation | Semiconductor device having LDMOS transistors and a screening layer |
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IT1213260B (en) * | 1984-12-18 | 1989-12-14 | Sgs Thomson Microelectronics | BRIDGE CIRCUIT OF N-CHANNEL POWER MOS TRANSISTORS INTEGRATED AND PROCEDURE FOR ITS MANUFACTURE. |
US4910563A (en) * | 1988-08-15 | 1990-03-20 | General Electric Company | Complementary circuit and structure with common substrate |
US4994955A (en) * | 1989-12-29 | 1991-02-19 | North American Philips Corporation | Half-bridge driver which is insensitive to common mode currents |
US5129911A (en) * | 1991-03-11 | 1992-07-14 | Siczek Bernard W | Orbital aiming device |
EP0544047B1 (en) * | 1991-11-25 | 1998-02-18 | STMicroelectronics S.r.l. | High current MOS transistor integrated bridge structure optimising conduction power losses |
JPH05314769A (en) | 1992-05-13 | 1993-11-26 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US5528480A (en) | 1994-04-28 | 1996-06-18 | Elonex Technologies, Inc. | Highly efficient rectifying and converting circuit for computer power supplies |
US5610503A (en) | 1995-05-10 | 1997-03-11 | Celestica, Inc. | Low voltage DC-to-DC power converter integrated circuit and related methods |
WO1997026226A1 (en) * | 1996-01-18 | 1997-07-24 | Moltech Invent S.A. | Protection of porous bodies against oxidation |
JPH09213956A (en) * | 1996-02-07 | 1997-08-15 | Nec Kansai Ltd | Semiconductor device and manufacture thereof |
KR100664333B1 (en) * | 1997-10-28 | 2007-01-02 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Semiconductor device comprising a half-bridge circuit |
US20010003367A1 (en) * | 1998-06-12 | 2001-06-14 | Fwu-Iuan Hshieh | Trenched dmos device with low gate charges |
DE19953620A1 (en) | 1998-11-09 | 2000-05-11 | Int Rectifier Corp | Low voltage MOS gate controlled semiconductor component, useful for a direct voltage/direct voltage converter, employs planar strip technology and has a minimal power index |
US6518621B1 (en) * | 1999-09-14 | 2003-02-11 | General Semiconductor, Inc. | Trench DMOS transistor having reduced punch-through |
JP2002164442A (en) * | 2000-11-28 | 2002-06-07 | Hitachi Ltd | Semiconductor device and its manufacturing method |
US6894397B2 (en) * | 2001-10-03 | 2005-05-17 | International Rectifier Corporation | Plural semiconductor devices in monolithic flip chip |
SE0104400D0 (en) * | 2001-12-21 | 2001-12-21 | Bang & Olufsen Powerhouse As | Half-bridge driver and power conversion system with such driver |
CN1723601A (en) * | 2002-12-10 | 2006-01-18 | 皇家飞利浦电子股份有限公司 | Integrated half-bridge power circuit |
-
2003
- 2003-12-08 CN CNA2003801055459A patent/CN1723601A/en active Pending
- 2003-12-08 JP JP2004558281A patent/JP2006509360A/en active Pending
- 2003-12-08 KR KR1020057010417A patent/KR20050085461A/en not_active Application Discontinuation
- 2003-12-08 US US10/537,575 patent/US7459750B2/en active Active
- 2003-12-08 WO PCT/IB2003/005806 patent/WO2004054078A1/en active Application Filing
- 2003-12-08 AU AU2003283750A patent/AU2003283750A1/en not_active Abandoned
- 2003-12-08 EP EP03775731A patent/EP1573889A1/en not_active Withdrawn
-
2008
- 2008-10-28 US US12/260,064 patent/US20090079272A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5585294A (en) * | 1994-10-14 | 1996-12-17 | Texas Instruments Incorporated | Method of fabricating lateral double diffused MOS (LDMOS) transistors |
US6288424B1 (en) * | 1998-09-23 | 2001-09-11 | U.S. Philips Corporation | Semiconductor device having LDMOS transistors and a screening layer |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8148815B2 (en) | 2008-10-13 | 2012-04-03 | Intersil Americas, Inc. | Stacked field effect transistor configurations |
US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
US8508052B2 (en) | 2008-12-23 | 2013-08-13 | Intersil Americas Inc. | Stacked power converter structure and method |
JP2013106371A (en) * | 2011-11-10 | 2013-05-30 | Rohm Co Ltd | Overcurrent protection circuit and switching power supply device using the same |
Also Published As
Publication number | Publication date |
---|---|
KR20050085461A (en) | 2005-08-29 |
US7459750B2 (en) | 2008-12-02 |
JP2006509360A (en) | 2006-03-16 |
EP1573889A1 (en) | 2005-09-14 |
AU2003283750A1 (en) | 2004-06-30 |
CN1723601A (en) | 2006-01-18 |
US20060054967A1 (en) | 2006-03-16 |
US20090079272A1 (en) | 2009-03-26 |
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