WO2004059706A3 - Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices - Google Patents

Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices Download PDF

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Publication number
WO2004059706A3
WO2004059706A3 PCT/US2003/040483 US0340483W WO2004059706A3 WO 2004059706 A3 WO2004059706 A3 WO 2004059706A3 US 0340483 W US0340483 W US 0340483W WO 2004059706 A3 WO2004059706 A3 WO 2004059706A3
Authority
WO
WIPO (PCT)
Prior art keywords
mesa
methods
forming
semiconductor mesa
including semiconductor
Prior art date
Application number
PCT/US2003/040483
Other languages
French (fr)
Other versions
WO2004059706A2 (en
Inventor
Michael J Bergmann
David T Emerson
Amber C Abare
Kevin W Haberern
Original Assignee
Cree Inc
Michael J Bergmann
David T Emerson
Amber C Abare
Kevin W Haberern
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Michael J Bergmann, David T Emerson, Amber C Abare, Kevin W Haberern filed Critical Cree Inc
Priority to EP03814183A priority Critical patent/EP1573827A2/en
Priority to CA002503854A priority patent/CA2503854A1/en
Priority to AU2003301089A priority patent/AU2003301089A1/en
Priority to CNA2003801070707A priority patent/CN1729582A/en
Priority to JP2004563789A priority patent/JP2006511944A/en
Publication of WO2004059706A2 publication Critical patent/WO2004059706A2/en
Publication of WO2004059706A3 publication Critical patent/WO2004059706A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

An electronic device including a substrate and a semiconductor mesa on the substrate. Said device mesa having a mesa base adjacent to the substrate, a mesa surface opposite the substrate, and mesa sidewalls between the mesa surface and the mesa base. In addition, the semiconductor mesa has a first conductivity type between the mesa base and a junction, the junction being between the mesa base and the mesa surface, and the semiconductor mesa having a second conductivity type between the junction and the mesa surface. Related manufacturing methods are also defined.
PCT/US2003/040483 2002-12-20 2003-12-18 Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices WO2004059706A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03814183A EP1573827A2 (en) 2002-12-20 2003-12-18 Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
CA002503854A CA2503854A1 (en) 2002-12-20 2003-12-18 Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
AU2003301089A AU2003301089A1 (en) 2002-12-20 2003-12-18 Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
CNA2003801070707A CN1729582A (en) 2002-12-20 2003-12-18 Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
JP2004563789A JP2006511944A (en) 2002-12-20 2003-12-18 Electronic device including semiconductor mesa structure and conductive junction and method for forming related device

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US43491402P 2002-12-20 2002-12-20
US43499902P 2002-12-20 2002-12-20
US43521302P 2002-12-20 2002-12-20
US43521102P 2002-12-20 2002-12-20
US60/435,211 2002-12-20
US60/434,914 2002-12-20
US60/434,999 2002-12-20
US60/435,213 2002-12-20

Publications (2)

Publication Number Publication Date
WO2004059706A2 WO2004059706A2 (en) 2004-07-15
WO2004059706A3 true WO2004059706A3 (en) 2005-01-06

Family

ID=32686283

Family Applications (4)

Application Number Title Priority Date Filing Date
PCT/US2003/040377 WO2004059809A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
PCT/US2003/040379 WO2004059751A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
PCT/US2003/040483 WO2004059706A2 (en) 2002-12-20 2003-12-18 Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
PCT/US2003/040682 WO2004059808A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices

Family Applications Before (2)

Application Number Title Priority Date Filing Date
PCT/US2003/040377 WO2004059809A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
PCT/US2003/040379 WO2004059751A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040682 WO2004059808A2 (en) 2002-12-20 2003-12-18 Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices

Country Status (12)

Country Link
US (6) US7329569B2 (en)
EP (5) EP1573827A2 (en)
JP (4) JP4866550B2 (en)
KR (4) KR20050085290A (en)
CN (4) CN1729581A (en)
AT (2) ATE512490T1 (en)
AU (4) AU2003299748A1 (en)
CA (4) CA2504098A1 (en)
DE (1) DE60311678T2 (en)
HK (1) HK1076330A1 (en)
TW (4) TWI337373B (en)
WO (4) WO2004059809A2 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2335878T3 (en) 2002-08-30 2010-04-06 Lumination, Llc COVERED LED WITH IMPROVED EFFECTIVENESS.
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
EP1573827A2 (en) * 2002-12-20 2005-09-14 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
GB0302580D0 (en) * 2003-02-05 2003-03-12 Univ Strathclyde MICRO LEDs
KR100818522B1 (en) * 2004-08-31 2008-03-31 삼성전기주식회사 The fabrication method of laser diode
US7345309B2 (en) * 2004-08-31 2008-03-18 Lockheed Martin Corporation SiC metal semiconductor field-effect transistor
US20060262243A1 (en) * 2005-05-19 2006-11-23 Lester Steven D Display system and method using a solid state laser
JP2007027164A (en) * 2005-07-12 2007-02-01 Rohm Co Ltd Manufacturing method of semiconductor light emitting device and semiconductor light emitting device
JP2007184426A (en) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd Manufacturing method of semiconductor device
US8193591B2 (en) * 2006-04-13 2012-06-05 Freescale Semiconductor, Inc. Transistor and method with dual layer passivation
KR100794380B1 (en) * 2006-05-08 2008-01-15 한국광기술원 Manufacturing Method Of The Buried Heterostructure Type Laser Diode Having Activation Layer Protected By Mesa Sidewall Passivation
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US7598104B2 (en) 2006-11-24 2009-10-06 Agency For Science, Technology And Research Method of forming a metal contact and passivation of a semiconductor feature
US7707455B2 (en) * 2007-03-14 2010-04-27 Microsoft Corporation Self-service recovery of application data
US7833695B2 (en) * 2007-05-31 2010-11-16 Corning Incorporated Methods of fabricating metal contact structures for laser diodes using backside UV exposure
US8237183B2 (en) * 2007-08-16 2012-08-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
KR100892983B1 (en) * 2007-09-05 2009-04-10 한국광기술원 Formation method of buried heterostructure Laser Diode
JP2009129943A (en) * 2007-11-20 2009-06-11 Mitsubishi Electric Corp Nitride semiconductor device and method of manufacturing the same
US7935620B2 (en) 2007-12-05 2011-05-03 Freescale Semiconductor, Inc. Method for forming semiconductor devices with low leakage Schottky contacts
JP2009158745A (en) * 2007-12-27 2009-07-16 Mitsubishi Electric Corp Method of manufacturing semiconductor device
US9318874B2 (en) * 2009-06-03 2016-04-19 Nichia Corporation Semiconductor device and method of manufacturing semiconductor device
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
JP5742325B2 (en) * 2010-03-25 2015-07-01 日亜化学工業株式会社 Semiconductor laser device and manufacturing method thereof
KR101731056B1 (en) * 2010-08-13 2017-04-27 서울바이오시스 주식회사 Semiconductor light emitting device having ohmic electrode structure and method of fabricating the same
US20120149176A1 (en) * 2010-12-10 2012-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for forming a iii-v family layer
US20130009045A1 (en) * 2011-07-07 2013-01-10 Raytheon Company Self-Aligned Contacts for Photosensitive Detection Devices
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
GB2494008A (en) * 2011-08-23 2013-02-27 Oclaro Technology Ltd semiconductor laser device and a method for manufacturing a semiconductor laser device
US8710859B2 (en) * 2011-09-23 2014-04-29 Powertech Technology Inc. Method for testing multi-chip stacked packages
CN103021840B (en) * 2011-09-23 2015-11-04 中国科学院微电子研究所 Prevent the method for passivation layer over etching
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US9401582B2 (en) * 2012-05-08 2016-07-26 M/A-Com Technology Solutions Holdings, Inc. Lasers with beam-shape modification
JP6205826B2 (en) * 2013-05-01 2017-10-04 住友電気工業株式会社 Semiconductor optical device manufacturing method
RU2617179C2 (en) * 2014-11-14 2017-04-21 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) POWER AMPLIFICATION METHOD OF RADIO FREQUENCY MODULATED TERAHERTZ RADIATION OF 30-PERIOD WEAKLY BOUND SEMICONDUCTOR SUPERLATTICE GaAs / AlGaAs
JP2019517147A (en) * 2016-05-20 2019-06-20 メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド Semiconductor laser and process for planarization of semiconductor laser
JP7164202B2 (en) * 2016-10-06 2022-11-01 ステファン ヴィトハルム Apparatus and method for combining dust
US11211525B2 (en) 2017-05-01 2021-12-28 Ohio State Innovation Foundation Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
CN108666216B (en) * 2018-05-15 2021-05-07 西安电子科技大学 HEMT device based on laminated passivation structure and preparation method thereof
KR102544296B1 (en) * 2018-09-13 2023-06-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 A VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE and APPARATUS HAVING THE SAME
CN109659810B (en) * 2018-12-24 2021-10-08 香港中文大学（深圳） Method for reducing threshold of microcavity semiconductor laser
WO2020136012A1 (en) * 2018-12-26 2020-07-02 Asml Netherlands B.V. Method of manufacturing an aperture device
US11366240B2 (en) * 2019-06-28 2022-06-21 Beijing Boe Technology Development Co., Ltd. Radiation detection and method of fabricating radiation detector
WO2021087274A1 (en) * 2019-10-30 2021-05-06 The Regents Of The University Of California Method to improve the performance of gallium-containing light-emitting devices
US11626532B2 (en) 2021-01-06 2023-04-11 Applied Materials, Inc. Methods and apparatus for forming light emitting diodes
TWI748856B (en) * 2021-01-29 2021-12-01 錼創顯示科技股份有限公司 Micro light-emitting diode and display panel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
US4531142A (en) * 1982-03-10 1985-07-23 Siemens Aktiengesellschaft Light emitting diode having silicon carbide layers
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5574743A (en) * 1994-03-22 1996-11-12 U.S. Philips Corporation Semiconductor diode laser having improved performance and method of manufacturing same
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED

Family Cites Families (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US93020A (en) * 1869-07-27 Improvement in eye-xlasses
US592053A (en) * 1897-10-19 Antifriction-bearing
US45015A (en) * 1864-11-15 Improvement in flaring metal hoops
US542995A (en) * 1895-07-23 Mechanism for giving reciprocating motion to canvas
US15721A (en) * 1856-09-09 Improvement in harvesters
US25121A (en) * 1859-08-16 Improvement in mole-plows
US22290A (en) * 1858-12-14 Harness-snap
US123164A (en) * 1872-01-30 Improvement in fishing-apparatus
US6418A (en) * 1849-05-01 Improvement in the preparation of flour for bread-making
US920409A (en) * 1908-11-21 1909-05-04 Rudolf Wild Manicure implement.
GB406665A (en) * 1932-08-30 1934-02-28 Roger Harry Cubitt Improvements relating to the manufacture of photo-electric cells
US3495140A (en) * 1967-10-12 1970-02-10 Rca Corp Light-emitting diodes and method of making same
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices
US4084130A (en) * 1974-01-18 1978-04-11 Texas Instruments Incorporated Laser for integrated optical circuits
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
NL176323C (en) * 1975-03-11 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE FOR GENERATING INCOHERENT RADIATION.
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4236122A (en) * 1978-04-26 1980-11-25 Bell Telephone Laboratories, Incorporated Mesa devices fabricated on channeled substrates
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
JPS61236189A (en) * 1985-04-11 1986-10-21 Sharp Corp Semiconductor laser element
FR2613547B1 (en) * 1987-04-01 1989-06-23 Cit Alcatel SEMICONDUCTOR LASER WITH UNDERGROUND HETEROSTRUCTURE
US5003548A (en) * 1988-09-21 1991-03-26 Cornell Research Foundation, Inc. High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser
JP2650744B2 (en) * 1988-12-28 1997-09-03 シャープ株式会社 Light emitting diode
JPH02188983A (en) * 1989-01-17 1990-07-25 Nec Corp Embedded structure semiconductor laser device
KR900013612A (en) * 1989-02-17 1990-09-05 프레데릭 얀 스미트 Method and device for connecting two objects
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
JPH0396289A (en) * 1989-09-08 1991-04-22 Nec Corp Semiconductor laser
JP3011729B2 (en) * 1990-01-16 2000-02-21 沖電気工業株式会社 Manufacturing method of bipolar semiconductor integrated circuit device
DE69010485T2 (en) * 1990-04-06 1995-01-26 Ibm Method for producing the web structure of a self-aligning semiconductor laser.
US5243204A (en) * 1990-05-18 1993-09-07 Sharp Kabushiki Kaisha Silicon carbide light emitting diode and a method for the same
US5208183A (en) * 1990-12-20 1993-05-04 At&T Bell Laboratories Method of making a semiconductor laser
US5088099A (en) * 1990-12-20 1992-02-11 At&T Bell Laboratories Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
US5260230A (en) * 1991-07-12 1993-11-09 Nippon Telegraph And Telephone Corporation Method of manufacturing buried heterostructure semiconductor laser
JPH05235481A (en) * 1992-02-21 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
DE69308977T2 (en) * 1992-09-25 1997-10-09 Furukawa Electric Co Ltd Semiconductor laser device
US5276699A (en) * 1992-11-05 1994-01-04 Eastman Kodak Company Depressed-index ridge waveguide laser diode containing a stabilizing region
DE4305296C3 (en) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Method of manufacturing a radiation emitting diode
JP3312146B2 (en) * 1993-06-25 2002-08-05 株式会社日立製作所 Magnetic head and method of manufacturing the same
JPH0750448A (en) * 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd Semiconductor laser and manufacture thereof
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
JP2822868B2 (en) * 1993-12-10 1998-11-11 日本電気株式会社 Manufacturing method of semiconductor laser
US5418190A (en) 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
US5559053A (en) * 1994-04-14 1996-09-24 Lucent Technologies Inc. Vertical cavity semiconductor laser
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
JP3497627B2 (en) * 1994-12-08 2004-02-16 株式会社東芝 Semiconductor device and manufacturing method thereof
US5787104A (en) * 1995-01-19 1998-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
KR970008386A (en) * 1995-07-07 1997-02-24 하라 세이지 A method of dividing a substrate and a dividing device
JPH0936484A (en) * 1995-07-14 1997-02-07 Oki Electric Ind Co Ltd Semiconductor laser and fabrication thereof
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing process
KR0172797B1 (en) * 1995-10-16 1999-03-30 김주용 Laser diode and method for fabricating the same
WO1997023900A1 (en) * 1995-12-21 1997-07-03 Philips Electronics N.V. Method of manufacturing a semiconductor device with a pn junction provided through epitaxy
KR970054992A (en) * 1995-12-29 1997-07-31 김주용 Laser diode manufacturing method
KR970054972A (en) * 1995-12-29 1997-07-31 김주용 Laser diode manufacturing method
JPH09270569A (en) * 1996-01-25 1997-10-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5923690A (en) * 1996-01-25 1999-07-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JPH09270528A (en) 1996-03-29 1997-10-14 Sanyo Electric Co Ltd Light emitting diode element and manufacturing method thereof
JP3708213B2 (en) * 1996-04-18 2005-10-19 松下電器産業株式会社 Semiconductor light emitting device and manufacturing method thereof
JPH1027940A (en) * 1996-07-12 1998-01-27 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH1075009A (en) * 1996-08-30 1998-03-17 Nec Corp Optical semiconductor device and its manufacture
JPH1075011A (en) * 1996-08-30 1998-03-17 Sony Corp Semiconductor laser
KR100251348B1 (en) * 1996-12-30 2000-05-01 김영환 Rwg laser diode and its manufacturing method
JP3954686B2 (en) 1997-03-24 2007-08-08 平田機工株式会社 Substrate transport apparatus and substrate transport method
JP3897186B2 (en) * 1997-03-27 2007-03-22 シャープ株式会社 Compound semiconductor laser
EP2234142A1 (en) * 1997-04-11 2010-09-29 Nichia Corporation Nitride semiconductor substrate
JPH10290025A (en) * 1997-04-15 1998-10-27 Oki Electric Ind Co Ltd Led array
US5923946A (en) * 1997-04-17 1999-07-13 Cree Research, Inc. Recovery of surface-ready silicon carbide substrates
JP3339369B2 (en) * 1997-05-30 2002-10-28 株式会社デンソー Laser diode
DE69827025T2 (en) 1997-08-29 2005-09-08 Cree, Inc. ROBUST LIGHT EMITTING DIODE OF A NITRIDE COMPOUND OF GROUP III ELEMENTS FOR HIGH RELIABILITY IN STANDARD PACKS
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
US5972781A (en) * 1997-09-30 1999-10-26 Siemens Aktiengesellschaft Method for producing semiconductor chips
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3270374B2 (en) * 1997-11-07 2002-04-02 日本電気株式会社 Manufacturing method of semiconductor laser
JPH11150334A (en) * 1997-11-14 1999-06-02 Sony Corp Semiconductor light-emitting element
JP3653169B2 (en) * 1998-01-26 2005-05-25 シャープ株式会社 Gallium nitride semiconductor laser device
JP3604278B2 (en) * 1998-02-17 2004-12-22 日亜化学工業株式会社 Nitride semiconductor laser device
JP4166885B2 (en) * 1998-05-18 2008-10-15 富士通株式会社 Optical semiconductor device and manufacturing method thereof
JP4352473B2 (en) * 1998-06-26 2009-10-28 ソニー株式会社 Manufacturing method of semiconductor device
JP4245691B2 (en) * 1998-08-04 2009-03-25 シャープ株式会社 Gallium nitride semiconductor laser device and optical pickup device
US6365968B1 (en) * 1998-08-07 2002-04-02 Corning Lasertron, Inc. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
JP3348024B2 (en) * 1998-08-17 2002-11-20 松下電器産業株式会社 Semiconductor laser device
KR100281692B1 (en) * 1998-10-17 2001-03-02 윤종용 Self-aligned contact pad of semiconductor device and method of forming the same
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3907854B2 (en) * 1998-12-07 2007-04-18 富士通株式会社 Semiconductor laser and manufacturing method thereof
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6201264B1 (en) * 1999-01-14 2001-03-13 Lumileds Lighting, U.S., Llc Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
JP2000223742A (en) 1999-01-29 2000-08-11 Toshiba Corp Nitrogen compound semiconductor element
EP1168539B1 (en) * 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
JP3459607B2 (en) * 1999-03-24 2003-10-20 三洋電機株式会社 Semiconductor laser device and method of manufacturing the same
JP2000299528A (en) * 1999-04-12 2000-10-24 Nec Corp Semiconductor laser and manufacture thereof
JP3735638B2 (en) * 1999-04-23 2006-01-18 ソニー株式会社 Semiconductor laser and manufacturing method thereof
JP2001156398A (en) * 1999-05-19 2001-06-08 Canon Inc Method for fabricating semiconductor element, semiconductor element, and gyro
US6432788B1 (en) * 1999-07-22 2002-08-13 Implant Sciences Corporation Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor
JP2001094197A (en) * 1999-09-21 2001-04-06 Nec Corp Self-oscillating type semiconductor laser
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
JP2001148532A (en) * 1999-11-19 2001-05-29 Pioneer Electronic Corp Nitride semiconductor laser and manufacturing method therefor
US6835963B2 (en) * 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
JP4007737B2 (en) * 1999-12-24 2007-11-14 三洋電機株式会社 Semiconductor element
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
JP3636976B2 (en) * 2000-03-17 2005-04-06 日本電気株式会社 Nitride semiconductor device and manufacturing method thereof
JP4060511B2 (en) * 2000-03-28 2008-03-12 パイオニア株式会社 Method for separating nitride semiconductor device
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP3484394B2 (en) * 2000-04-12 2004-01-06 Ｎｅｃエレクトロニクス株式会社 Optical semiconductor device and method of manufacturing the same
WO2001082136A2 (en) * 2000-04-20 2001-11-01 General Electric Company Method and system for graphically identifying replacement parts for generally complex equipment
US6420252B1 (en) * 2000-05-10 2002-07-16 Emcore Corporation Methods of forming robust metal contacts on compound semiconductors
AU2001259701A1 (en) * 2000-05-15 2001-11-26 Paratek Pharmaceuticals, Inc 7-substituted fused ring tetracycline compounds
ATE366469T1 (en) * 2000-06-08 2007-07-15 Nichia Corp SEMICONDUCTOR LASER COMPONENT AND METHOD FOR PRODUCING IT
US6432735B1 (en) * 2000-06-23 2002-08-13 Agere Systems Guardian Corp. High power single mode laser and method of fabrication
KR100338803B1 (en) * 2000-08-12 2002-05-31 이형도 Method for fabricating semiconductor laser diode
JP2002094189A (en) * 2000-09-14 2002-03-29 Sharp Corp Nitride semiconductor laser device and optical instrument using it
JP2002094181A (en) * 2000-09-14 2002-03-29 Sony Corp Semiconductor laser device and its manufacturing method
US6387804B1 (en) * 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. Passivation of sidewall spacers using ozonated water
US6475100B1 (en) * 2000-10-11 2002-11-05 Callaway Golf Company Golf club head with adjustable face angle
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
DE10054966A1 (en) 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Component for optoelectronics
KR100346843B1 (en) * 2000-12-07 2002-08-03 삼성전자 주식회사 Method of forming interlayer dielectric film and method of manufacturing semiconductor device
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
JP2002222859A (en) * 2001-01-26 2002-08-09 Sanken Electric Co Ltd Method for forming contact electrode of semiconductor element
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2002335048A (en) * 2001-03-06 2002-11-22 Sony Corp Nitride semiconductor laser element and its manufacturing method
JP3849758B2 (en) * 2001-04-12 2006-11-22 ソニー株式会社 Semiconductor laser element
JP4304883B2 (en) * 2001-05-30 2009-07-29 日亜化学工業株式会社 Nitride semiconductor laser diode and manufacturing method thereof
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP4370911B2 (en) * 2001-05-31 2009-11-25 日亜化学工業株式会社 Semiconductor laser element
JP3876649B2 (en) * 2001-06-05 2007-02-07 ソニー株式会社 Nitride semiconductor laser and manufacturing method thereof
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
US6746948B2 (en) * 2001-09-17 2004-06-08 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor light-emitting device
DE10148227B4 (en) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip, method for its production and radiation-emitting component
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US20040075160A1 (en) * 2002-10-18 2004-04-22 Jack Eng Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
DE10254190B4 (en) * 2002-11-20 2005-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Infrared semiconductor laser
EP1573827A2 (en) * 2002-12-20 2005-09-14 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
US4531142A (en) * 1982-03-10 1985-07-23 Siemens Aktiengesellschaft Light emitting diode having silicon carbide layers
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5574743A (en) * 1994-03-22 1996-11-12 U.S. Philips Corporation Semiconductor diode laser having improved performance and method of manufacturing same
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED

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