WO2004061911A8 - Semiconductor devices with reduced active region defects and unique contacting schemes - Google Patents

Semiconductor devices with reduced active region defects and unique contacting schemes

Info

Publication number
WO2004061911A8
WO2004061911A8 PCT/US2003/037786 US0337786W WO2004061911A8 WO 2004061911 A8 WO2004061911 A8 WO 2004061911A8 US 0337786 W US0337786 W US 0337786W WO 2004061911 A8 WO2004061911 A8 WO 2004061911A8
Authority
WO
WIPO (PCT)
Prior art keywords
opening
region
cladding region
forming
defects
Prior art date
Application number
PCT/US2003/037786
Other languages
French (fr)
Other versions
WO2004061911A2 (en
WO2004061911A3 (en
Inventor
Jeffrey Devin Bude
Malcolm Carroll
Clifford Alan King
Original Assignee
Agere Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Inc filed Critical Agere Systems Inc
Priority to JP2005508542A priority Critical patent/JP5489387B2/en
Priority to DE60310762T priority patent/DE60310762T2/en
Priority to AU2003303492A priority patent/AU2003303492A1/en
Priority to EP03808419A priority patent/EP1573790B1/en
Publication of WO2004061911A2 publication Critical patent/WO2004061911A2/en
Publication of WO2004061911A3 publication Critical patent/WO2004061911A3/en
Publication of WO2004061911A8 publication Critical patent/WO2004061911A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Abstract

A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (f) planarizing the top of the device to remove all epitaxial regions that extend above the top of the cladding layer, thereby making the top of the first predetermined region grown in the second opening essentially flush with the top of the cladding region; and (g) performing additional steps to complete the fabrication of the device. Also described are unique devices, such as photodetectors and MOSFETs, fabricated by this method, as well as unique contacting configurations that enhance their performance.
PCT/US2003/037786 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes WO2004061911A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005508542A JP5489387B2 (en) 2002-12-18 2003-11-26 Semiconductor device having a unique contact scheme with reduced defects in the active region
DE60310762T DE60310762T2 (en) 2002-12-18 2003-11-26 SEMICONDUCTOR DEVICE WITH REDUCED DEFECTS IN THE ACTIVE AREAS AND UNIQUE CONTACT CHART
AU2003303492A AU2003303492A1 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes
EP03808419A EP1573790B1 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US60/434,359 2002-12-18
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
US10/453,037 2003-06-03

Publications (3)

Publication Number Publication Date
WO2004061911A2 WO2004061911A2 (en) 2004-07-22
WO2004061911A3 WO2004061911A3 (en) 2004-09-16
WO2004061911A8 true WO2004061911A8 (en) 2005-08-25

Family

ID=32600178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Country Status (8)

Country Link
US (2) US7012314B2 (en)
EP (1) EP1573790B1 (en)
JP (2) JP5489387B2 (en)
KR (1) KR20050093785A (en)
AU (1) AU2003303492A1 (en)
DE (1) DE60310762T2 (en)
TW (1) TWI232544B (en)
WO (1) WO2004061911A2 (en)

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US7297569B2 (en) 2007-11-20
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JP2011238942A (en) 2011-11-24
JP5489387B2 (en) 2014-05-14
TW200419721A (en) 2004-10-01
TWI232544B (en) 2005-05-11
US7012314B2 (en) 2006-03-14
EP1573790A2 (en) 2005-09-14
KR20050093785A (en) 2005-09-23
AU2003303492A8 (en) 2004-07-29
AU2003303492A1 (en) 2004-07-29
US20040121507A1 (en) 2004-06-24
US20060057825A1 (en) 2006-03-16
DE60310762T2 (en) 2007-10-11
EP1573790B1 (en) 2006-12-27
WO2004061911A2 (en) 2004-07-22
WO2004061911A3 (en) 2004-09-16

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