WO2004061933B1 - Diffusion barrier and method therefor - Google Patents

Diffusion barrier and method therefor

Info

Publication number
WO2004061933B1
WO2004061933B1 PCT/US2003/041263 US0341263W WO2004061933B1 WO 2004061933 B1 WO2004061933 B1 WO 2004061933B1 US 0341263 W US0341263 W US 0341263W WO 2004061933 B1 WO2004061933 B1 WO 2004061933B1
Authority
WO
WIPO (PCT)
Prior art keywords
printhead
layer
barrier
transistor
heater resistor
Prior art date
Application number
PCT/US2003/041263
Other languages
French (fr)
Other versions
WO2004061933A1 (en
Inventor
Byron Vencent Bell
Yimin Guan
Original Assignee
Lexmark Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lexmark Int Inc filed Critical Lexmark Int Inc
Priority to KR1020057012160A priority Critical patent/KR101127215B1/en
Priority to EP03814963.9A priority patent/EP1588412B1/en
Priority to JP2004565704A priority patent/JP2006512235A/en
Priority to AU2003303498A priority patent/AU2003303498A1/en
Publication of WO2004061933A1 publication Critical patent/WO2004061933A1/en
Publication of WO2004061933B1 publication Critical patent/WO2004061933B1/en
Priority to HK06108763A priority patent/HK1088439A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1631—Manufacturing processes photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/13—Heads having an integrated circuit

Abstract

A semiconductor device containing at least one transistor (14) and at least one heater resistor (18) in a heater resistor area adjacent the at least one transistor on a semiconductor substrate (22). The device includes a silicon substrate (22) containing contact openings for metal contacts (34) to the at least one transistor. A barrier layer (42) is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy). A conductive layer (44) is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.

Claims

AMENDED CLAIMS
[received by the International Bureau on 09 August 2004 (09.08.04); original claim 14 amended; new claims 19-25 added; remaining claims unchanged (2 pages)]
b a barrier layer in the contact openings and in the heater resistor area providing a diffusion barrier/healer resistor layer, the barrier layer being selected from a group consisting of aN, Ta TaAl, TaN TaAl, TiWN, TaAlN, TiN, Ta<Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi{Nx, Oy); and a conductive layer adjacent at least a portion of the barrier layer for providing connection 0 between a power source and the at least one heater resistor and at least one transistor, wherein a step of patterning and etching the barrier layer in the heater resistor area prior to depositing a resistive layer is avoided.
15. The printhead beater chip of claim 14 wherein the barrier layer comprises TaN.
16. The printhead heater chip of claim 15 wherein the conductive layer comprises aluminum.
17. The printhead heater chip of clai 14 wherein the barrier layer comprises a composite layer of Ta and TaAl.
.8. The printhead heater chip of claim 17 wherein ihe conductive layer comprises aluminum.
19. The printhead heater chip of claim 14 further comprising a suicide layer in the contact openings between the silicon substrate and the barrier layer.
20. An ink jet printhead including a silicon semiconductor substrate containing at least one transistor and at least one heater resistor in a heater resistor area adjacent the transistor, the printhead being made by a process comprising: providing contact openings adjacent the at least one transistor for metal contacts to the 5 at least one transistor; depositing a diffusion barrier/resistive layer in the contact openings and in the heater resistor area, the barrier/resistive layer comprising a layer selected from the group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, TafNx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy); and depositing a conductive layer on the barrier/resistive layer to provide connection between a power source and the at least one heater resistor and at least one transistor, wherein a step of patterning and etching a barrier layer in tl e heater resistor area prior to depositing a resistive layer is avoided, n wherein, in use, the printhead exhibits reduced spiking potential despite the substrate undergoing a temperature in excess of about 400°C during a process step for making the printhead, .
21. The printhead of claim 20, wherein the barrier/resistive layer comprises TaN.
22. The printhead of claim 21, wherein the conductive layer comprises aluminum,
23. The printhead of claim 20, wherein the barrier/resistive layer comprises a composite of Ta and TaAl.
24. Tlie printhead of claim 23 wherein the conductive layer comprises aluminum.
25. The printhead of claim 20 further comprising a silicidarton layer in the contact openings between the substrate and tho diffusion barrier/resistive layer.
PCT/US2003/041263 2002-12-27 2003-12-24 Diffusion barrier and method therefor WO2004061933A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020057012160A KR101127215B1 (en) 2002-12-27 2003-12-24 Diffusion barrier and method therefor
EP03814963.9A EP1588412B1 (en) 2002-12-27 2003-12-24 Diffusion barrier and method therefor
JP2004565704A JP2006512235A (en) 2002-12-27 2003-12-24 Diffusion barrier and manufacturing method thereof
AU2003303498A AU2003303498A1 (en) 2002-12-27 2003-12-24 Diffusion barrier and method therefor
HK06108763A HK1088439A1 (en) 2002-12-27 2006-08-08 Barrier layer, heater chip, ink jet printhead and method for reducing spiking

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/330,728 2002-12-27
US10/330,728 US6794753B2 (en) 2002-12-27 2002-12-27 Diffusion barrier and method therefor

Publications (2)

Publication Number Publication Date
WO2004061933A1 WO2004061933A1 (en) 2004-07-22
WO2004061933B1 true WO2004061933B1 (en) 2004-11-25

Family

ID=32654575

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/041263 WO2004061933A1 (en) 2002-12-27 2003-12-24 Diffusion barrier and method therefor

Country Status (9)

Country Link
US (2) US6794753B2 (en)
EP (1) EP1588412B1 (en)
JP (1) JP2006512235A (en)
KR (1) KR101127215B1 (en)
CN (1) CN100380615C (en)
AU (1) AU2003303498A1 (en)
HK (1) HK1088439A1 (en)
TW (1) TWI321817B (en)
WO (1) WO2004061933A1 (en)

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US8183145B2 (en) 2007-10-11 2012-05-22 International Business Machines Corporation Structure and methods of forming contact structures
TWI332904B (en) * 2007-11-29 2010-11-11 Internat United Technology Company Ltd Thermal inkjet printhead chip structure and manufacture method thereof
US8012773B2 (en) * 2009-06-11 2011-09-06 Canon Kabushiki Kaisha Method for manufacturing liquid discharge head
US20110254898A1 (en) * 2010-04-15 2011-10-20 Canon Kabushiki Kaisha Liquid discharge head and method for manufacturing the same
JP5847309B2 (en) 2012-12-19 2016-01-20 Jx日鉱日石金属株式会社 Tantalum sputtering target and manufacturing method thereof
US10407766B2 (en) 2012-12-19 2019-09-10 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same
TWI671211B (en) * 2014-11-19 2019-09-11 愛爾蘭商滿捷特科技公司 Inkjet nozzle device having improved lifetime

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Also Published As

Publication number Publication date
EP1588412B1 (en) 2013-07-03
KR101127215B1 (en) 2012-03-30
HK1088439A1 (en) 2006-11-03
US20050007424A1 (en) 2005-01-13
US6887782B2 (en) 2005-05-03
US6794753B2 (en) 2004-09-21
CN100380615C (en) 2008-04-09
EP1588412A1 (en) 2005-10-26
US20040127021A1 (en) 2004-07-01
TW200503120A (en) 2005-01-16
KR20050085918A (en) 2005-08-29
JP2006512235A (en) 2006-04-13
EP1588412A4 (en) 2009-06-10
AU2003303498A1 (en) 2004-07-29
CN1739193A (en) 2006-02-22
WO2004061933A1 (en) 2004-07-22
TWI321817B (en) 2010-03-11

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