WO2004079796A3 - Atomic layer deposited dielectric layers - Google Patents

Atomic layer deposited dielectric layers Download PDF

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Publication number
WO2004079796A3
WO2004079796A3 PCT/US2004/006685 US2004006685W WO2004079796A3 WO 2004079796 A3 WO2004079796 A3 WO 2004079796A3 US 2004006685 W US2004006685 W US 2004006685W WO 2004079796 A3 WO2004079796 A3 WO 2004079796A3
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WO
WIPO (PCT)
Prior art keywords
layer
atomic layer
hafnium
oxide
layer deposited
Prior art date
Application number
PCT/US2004/006685
Other languages
French (fr)
Other versions
WO2004079796A2 (en
Inventor
Kie Y Ahn
Leonard Forbes
Original Assignee
Micron Technology Inc
Kie Y Ahn
Leonard Forbes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Kie Y Ahn, Leonard Forbes filed Critical Micron Technology Inc
Priority to EP04717434A priority Critical patent/EP1599899A2/en
Priority to JP2006509146A priority patent/JP2006523952A/en
Publication of WO2004079796A2 publication Critical patent/WO2004079796A2/en
Publication of WO2004079796A3 publication Critical patent/WO2004079796A3/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28229—Making the insulator by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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Abstract

An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.
PCT/US2004/006685 2003-03-04 2004-03-04 Atomic layer deposited dielectric layers WO2004079796A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04717434A EP1599899A2 (en) 2003-03-04 2004-03-04 Atomic layer deposited dielectric layers
JP2006509146A JP2006523952A (en) 2003-03-04 2004-03-04 Atomic layer insulating layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/379,470 US7192892B2 (en) 2003-03-04 2003-03-04 Atomic layer deposited dielectric layers
US10/379,470 2003-03-04

Publications (2)

Publication Number Publication Date
WO2004079796A2 WO2004079796A2 (en) 2004-09-16
WO2004079796A3 true WO2004079796A3 (en) 2005-02-10

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Family Applications (1)

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PCT/US2004/006685 WO2004079796A2 (en) 2003-03-04 2004-03-04 Atomic layer deposited dielectric layers

Country Status (6)

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US (2) US7192892B2 (en)
EP (1) EP1599899A2 (en)
JP (1) JP2006523952A (en)
KR (1) KR100738731B1 (en)
CN (1) CN100530562C (en)
WO (1) WO2004079796A2 (en)

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US7728626B2 (en) 2002-07-08 2010-06-01 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7960803B2 (en) 2005-02-23 2011-06-14 Micron Technology, Inc. Electronic device having a hafnium nitride and hafnium oxide film
US7989285B2 (en) 2005-02-08 2011-08-02 Micron Technology, Inc. Method of forming a film containing dysprosium oxide and hafnium oxide using atomic layer deposition
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US8501563B2 (en) 2005-07-20 2013-08-06 Micron Technology, Inc. Devices with nanocrystals and methods of formation

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