WO2004081617B1 - Chalcogenide glass constant current device, and its method of fabrication and operation - Google Patents

Chalcogenide glass constant current device, and its method of fabrication and operation

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Publication number
WO2004081617B1
WO2004081617B1 PCT/US2004/007514 US2004007514W WO2004081617B1 WO 2004081617 B1 WO2004081617 B1 WO 2004081617B1 US 2004007514 W US2004007514 W US 2004007514W WO 2004081617 B1 WO2004081617 B1 WO 2004081617B1
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WO
WIPO (PCT)
Prior art keywords
constant current
layer
chalcogenide glass
voltage
thick
Prior art date
Application number
PCT/US2004/007514
Other languages
French (fr)
Other versions
WO2004081617A3 (en
WO2004081617A2 (en
Inventor
Kristy A Campbell
Terry L Gilton
John T Moore
Joseph F Brooks
Original Assignee
Micron Technology Inc
Kristy A Campbell
Terry L Gilton
John T Moore
Joseph F Brooks
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Kristy A Campbell, Terry L Gilton, John T Moore, Joseph F Brooks filed Critical Micron Technology Inc
Priority to CN2004800123595A priority Critical patent/CN1784642B/en
Priority to EP04720352A priority patent/EP1609034A2/en
Priority to JP2006507104A priority patent/JP5047612B2/en
Publication of WO2004081617A2 publication Critical patent/WO2004081617A2/en
Publication of WO2004081617A3 publication Critical patent/WO2004081617A3/en
Publication of WO2004081617B1 publication Critical patent/WO2004081617B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Abstract

The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.

Claims

AMENDED CLAIMS [Received by the International Bureau on 30 August 2005 (30.08.05 ): original claims 1-180 replaced by amended claims 1-180 (26 pages)]
1. A constant current device comprising: at least one chalcogenide glass layer; and, at least one metal-containing layer, said device being set to operate in a constant current mode by an applied first voltage across said layers to provide a substantially constant current over an applied voltage range.
2. The structure as in claim 1, wherein said at least one chalcogenide glass layer is a GexSeioo-x layer having a stoichiometry from about GeιsSes2 to about
3. The structure as in claim 2, wherein said at least one chalcogenide glass layer has a stoichiometry of about Ge4oSe6o.
4. The structure as in claim 1, wherein said at least one chalcogenide glass layer is about 150 A to about 400 A thick.
5. The structure as in claim 4, wherein said at least one chalcogenide glass layer is about 250 A thick.
6. The structure as in claim 1, wherein said device further comprises a second chalcogenide glass layer provided on said metal-containing layer, said second chalcogenide glass layer is about 50 A to about 500 A thick.
7. The structure as in claim 6, wherein said second chalcogenide glass layer is about 150 A thick.
8. The structure as in claim 1, wherein said metal-containing layer is a silver-selenide layer.
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9. The structure as in claim 1, wherein said metal-containing layer is a chalcogenide layer containing Ag.
10. The structure as in claim 9, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, and Po.
11. The structure as in claim 1, wherein said metal-containing layer is about 200 A to about 2000 A thick.
12. The structure as in claim 11, wherein said metal-containing layer is about 600 A thick.
13. The structure as in claim 1, wherein said applied first voltage is a significantly more negative pulse than an erase potential of said device.
14. The structure as in claim 13, wherein said negative pulse is applied within the range from about -800 mV to about -2.0 V.
15. The structure as in claim 14, wherein said negative pulse is applied within a pulse duration range of about 8 ns to about 30 ns.
16. The structure as in claim 1, wherein said device maintains a constant current over an applied voltage range of at least 700 mN.
17. The structure as in claim 1, wherein said device further comprises at least one electrode and a voltage source.
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18. A constant current source device comprising: a first and a second chalcogenide glass layer; and, a metal-containing layer provided between said first and second chalcogenide glass layers, said layers having a stoichiometry and thickness such that an applied negative pulse across said layers greater than an erase potential of the device causes said device to operate in constant current mode.
19. The device as in claim 18, wherein said first and second chalcogenide glass layers is a GexSeioo-x layer having a stoichiometry from about Geι8Se82 to about Ge-3Se57.
20. The device as in claim 19, wherein said chalcogenide glass layers have a stoichiometry of about Ge4oSe6o.
21. The device as in claim 18, wherein said first chalcogenide glass layer is about 150 A to about 400 A thick.
22. The device as in claim 21, wherein said first chalcogenide glass layer is about 250 A thick.
23. The device as in claim 18, wherein said second chalcogenide glass layer is about 50 A to about 500 A thick.
24. The device as in claim 23, wherein said second chalcogenide glass layer is about 150 A thick.
25. The device as in claim 18, wherein said metal-containing layer is a silver-selenide layer.
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26. The device as in claim 18, wherein said metal-containing layer is a chalcogenide layer containing Ag.
27. The device as in claim 26, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, and Po.
28. The device as in claim 18, wherein said metal-containing layer is about 200 A to about 2000 A thick.
29. The device as in claim 28, wherein said metal-containing layer is about 600 A thick.
30. The device as in claim 18, wherein said negative pulse is applied within the range from about -800 mV to about -2.0 N.
31. The device as in claim 30, wherein said negative pulse is applied within a pulse duration range of about 8 ns to about 30 ns.
32. The device as in claim 18, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
33. The device as in claim 18, further comprising at least one electrode and a voltage source.
34. A current device comprising: a first conductive layer; a chalcogenide glass layer provided over said first conductive layer; a metal-containing layer provided over said chalcogenide glass layer;
63 a second conductive layer provided over said metal-containing layer; and, a negative pulse of a predetermined magnitude is applied across said second and first conductive layers to cause said device to operate in constant current mode.
35. The device as in claim 34, wherein said chalcogenide glass layer is a GexSeιoo-χ layer having a stoichiometry from about GeιsSe82 to about Ge43Se57.
36. The device as in claim 35, wherein said chalcogenide glass layer has a stoichiometry of about Ge4oSe6o.
37. The device as in claim 34, wherein said chalcogenide glass layer is about 150 A to about 400 A thick.
38. The device as in claim 37, wherein said chalcogenide glass layer is about 250 A thick.
39. The device as in claim 34, wherein said metal-containing layer is a silver-selenide layer.
40. The device as in claim 34, wherein said metal-containing layer is a chalcogenide layer containing Ag.
41. The device as in claim 39, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, and Po.
42. The device as in claim 34, wherein said metal-containing layer is about 200 A to about 2000 A thick.
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43. The device as in claim 42, wherein said metal-containing layer is about 600 A thick.
44. The device as in claim 34, wherein said first and second conductive layers comprise a conductive material such as, one or more of tungsten, nickel, tantalum, tantalum nitride, copper, aluminum, platinum, silver, or titanium nitride.
45. The device as in claim 34, wherein said negative pulse is applied within the range from about -800 mV to about -2.0 N.
46. The device as in claim 45, wherein said negative pulse is applied within a pulse duration range of about 8 ns to about 30 ns.
47. The device as in claim 34, further comprising a second chalcogenide glass layer provided on said metal-containing layer.
48. The device as in claim 47, wherein said second chalcogenide glass layer is a GexSeιoo-χ layer having a stoichiometry from about GeisSes∑ to about
49. The device as in claim 48, wherein said second chalcogenide glass layer has a stoichiometry of about Ge4oSe6o.
50. The device as in claim 47, wherein said second chalcogenide glass layer is about 50 A to about 500 A thick.
51. The device as in claim 50, wherein said second chalcogenide glass layer is about 150 A thick.
52. The device as in claim 49, wherein said second chalcogenide glass layer is provided in between said metal-containing layer and said second conductive layer.
53. The device as in claim 34, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
54. The device as in claim 34, further comprising a voltage source that applies said negative pulse to said layers.
55. A constant current mamtairung structure comprising: at least two germanium-selenide glass layers having a stoichiometry from about GeisSes∑ to about Ge43Ses7, wherein at least one germanium-selenide glass layer is approximately equal to or greater than 50 A thick; at least one metal-containing layer provided between said at least two germanium-selenide layers; two electrodes a layer comprising silver provided between said two electrodes; and, a negative pulse of at least -800 mV or greater in magnitude is applied across said two electrodes causing said device to operate as a constant current device.
56. The structure as in claim 55, wherein said at least two germanium- selenide glass layers have a stoichiometry of about Ge4oSe6o.
66
57. The structure as in claim 55, wherein said at least two germanium- selenide glass layers are about less than 500 A thick.
58. The structure as in claim 55, wherein said metal-containing layer is a silver-selenide layer.
59. The structure as in claim 55, wherein said metal-containing layer is a chalcogenide layer containing Ag.
60. The structure as in claim 59, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, and Po.
61. The structure as in claim 55, wherein said metal-containing layer is about 200 A to about 2000 A thick.
62. The structure as in claim 55, wherein said metal-containing layer is about 600 A thick.
63. The structure as in claim 55, wherein said two electrodes comprises a conductive material selected from a group such as, one or more of tungsten, nickel, tantalum, tantalum nitride, copper, aluminum, platinum, silver, or titanium nitride.
64. The structure as in claim 55, wherein said at least one germanium- selenide glass layer is about 150 A to about 400 A thick.
65. The structure as in claim 55, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
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66. The structure as in claim 55, wherein said silver layer is approximately about 500 A thick or less.
67. The structure as in claim 66, wherein said silver layer is approximately 200 A thick.
68. The structure as in claim 55, further comprising a voltage source that applies said negative pulse to said electrodes.
69. A processor-based system, comprising: a processor; and, a memory circuit connected to said processor, at least one of said processor and said memory circuit including a constant current device comprising: at least one chalcogenide glass layer; and, at least one metal-containing layer, said device being set to operate in a constant current mode by an applied first voltage across said layers to provide a substantially constant current over an applied voltage range.
70. The system as in claim 69, wherein said at least one chalcogenide glass layer is a GexSeioo-x layer having a stoichiometry from about GeisSes∑ to about
71. The system as in claim 70, wherein said at least one chalcogenide glass layer has a stoichiometry of about Ge4oSeβo.
68
72. The system as in claim 69, wherein said at least one chalcogenide glass layer is about 150 A to about 400 A thick.
73. The system as in claim 72, wherein said at least one chalcogenide glass layer is about 250 A thick.
74. The system as in claim 69, wherein a second chalcogenide glass layer is provided on said metal-containing layer, said second chalcogenide glass layer is about 50 A to about 500 A thick.
75. The system as in claim 74, wherein said second chalcogenide glass layer is about 150 A thick.
76. The system as in claim 69, wherein said rnetal-containing layer is a silver-selenide layer.
77. The system as in claim 69, wherein said metal-containing layer is a chalcogenide layer containing Ag.
78. The system as in claim 77, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, and Po.
79. The system as in claim 69, wherein said metal-containing layer is about 200 A to about 2000 A thick.
80. The system as in claim 79, wherein said metal-containing layer is about 600 A thick.
81. The system as in claim 69, wherein said applied first voltage is a more negative pulse greater than an erase potential of said device.
69
82. The system as in claim 81, wherein said negative pulse is applied within the range from about -800 mN to about -2.0 V.
83. The system as in claim 82, wherein said negative pulse is applied within a pulse duration range of about 8 ns to about 30 ns.
84. The system as in claim 69, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
85. The system as in claim 69, further comprising at least one electrode and a voltage source.
86. A method of resetting the constant current value in a constant current device, said method comprising: providing the constant current device comprising a bottom and a top electrode, wherein at least one electrode has a lower potential than the other electrode; and applying to the electrode with the lower potential a voltage sufficient to cause a potential difference between said first and second electrodes to be at least equal in magnitude than to a negative threshold voltage of said constant current device.
87. The method as in claim 86, wherein said applied voltage is at a voltage slightly more negative than the upper voltage limit range for said existing constant current of said device.
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88. The method as in claim 87, wherein said applied voltage is a breakdown voltage of said constant current device.
89. The method as in claim 88, wherein said breakdown voltage is applied within the range from about -800 mV to about -2.0 V.
90. The method as in claim 86, wherein said constant current limit of said device is changed.
91. The method as in claim 89, wherein said breakdown voltage is applied within a pulse duration range of about 8 ns to about 30 ns.
92. A method for converting a memory device into a constant current device, said method comprising: providing a memory device comprising at least two electrodes, wherein at least one electrode has a lower potential than the other electrode; applying to the electrode with the lower potential a negative voltage greater than an erase potential of said memory device, said negative voltage is applied within the range of about -800 mV to about -2.0 V, wherein said memory device converts into a constant current device.
93. A method as in claim 92, wherein said constant current device maintains a constant current over an applied voltage range of at least 700 mV.
94. A method as in claim 87, wherein said negative voltage is applied within a pulse duration range of about 8 ns to about 30 ns.
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95. A method as in claim 87, wherein said memory device permanently converts into a constant current device.
96. A method of forming a constant current device, said method comprising: forming a first electrode; forming at least one chalcogenide glass layer over said first electrode; forming at least one metal-containing layer over said at least one chalcogenide glass layer; forming a second electrode, wherein at least one of the electrodes has a lower potential than the other electrode, and, applying to the electrode with the lower potential a first negative voltage to provide a substantially constant current over an applied voltage range.
97. A method as in claim 96, wherein said at least one chalcogenide glass layer is a GeχSeιoo-x layer having a stoichiometry from about GeιsSes2 to about
98. A method as in claim 97, wherein said at least one chalcogenide glass layer has a stoichiometry of about Ge4oSe6o.
99. A method as in claim 96, wherein said at least one chalcogenide glass layer is about 150 A to about 400 A thick.
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100. A method as in claim 99, wherein said at least one chalcogenide glass layer is about 250 A thick.
101. A method as in claim 96, further comprising forming a second chalcogenide glass layer on said metal-containing layer, said second chalcogenide glass layer is about 50 A to about 500 A thick.
102. A method as in claim 101, wherein said second chalcogenide glass layer is about 150 A thick.
103. A method as in claim 96, wherein said metal-containing layer is a silver-selenide layer.
104. A method as in claim 96, wherein said metal-containing layer is a chalcogenide layer containing Ag.
105. A method as in claim 104, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Ge, Te, and Po.
106. A method as in claim 96, wherein said metal-containing layer is about 200 A to about 2000 A thick.
107. A method as in claim 106, wherein said metal-containing layer is about 600 A thick.
108. A method as in claim 96, further comprising applying a negative voltage of absolute amplitude greater than an erase potential of said device to said electrode having a lower potential.
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109. A method as in claim 108, wherein said negative voltage is applied within the range from about -800 mN to about -2.0 V.
110. A method as in claim 109, wherein said negative voltage is applied within a pulse duration range of about 8 ns to about 30 ns.
111. A method as in claim 96, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
112. A method as in claim 96, further comprising at least one electrode and a voltage source from which said negative voltage is applied from.
113. A method of forming a constant current source device, said method comprising: forming a first and a second chalcogenide glass layer between first and second electrodes, wherein one of the electrode's has a lower potential than the other electrode; forming a metal-containing layer between said first and second chalcogenide glass layers; and, applying to said electrode having a lower potential a negative voltage greater than an erase potential of said device to cause said device to operate in constant current mode.
114. A method as in claim 113, wherein said first and second chalcogenide glass layers is a GexSeioo-x layer having a stoichiometry from about GeiβSes∑ to about Ge43Ses .
74
115. A method as in claim 114, wherein said chalcogenide glass layers have a stoichiometry of about Ge4oSe6o.
116. A method as in claim 113, wherein said first chalcogenide glass layer is about 150 A to about 400 A thick.
117. A method as in claim 116, wherein said first chalcogenide glass layer is about 250 A thick.
118. A method as in claim 113, wherein said second chalcogenide glass layer is about 50 A to about 500 A thick.
119. A method as in claim 118, wherein said second chalcogenide glass layer is about 150 A thick.
120. A method as in claim 113, wherein said metal-containing layer is a silver-selenide layer.
121. A method as in claim 113, wherein said metal-containing layer is a chalcogenide layer containing Ag.
122. A method as in claim 121, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, Ge, and Po.
123. A method as in claim 113, wherein said metal-containing layer is about 200 A to about 2000 A thick.
124. A method as in claim 123, wherein said metal-containing layer is about 600 A thick.
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125. A method as in claim 113, further comprising applying a negative pulse of absolute amplitude greater than said erase potential of said device to said electrode having a lower potential within the range from about -800 mV to about -2.0 V across said layers.
126. A method as in claim 125, wherein said negative pulse is applied within a pulse duration range of about 8 ns to about 30 ns.
127. A method as in claim 113, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
128. A method as in claim 113, further comprising providing at least one electrode with a lower potential than another electrode and a voltage source from which the negative pulse is applied from.
129. A method of forming a constant current device, said method comprising: forming a first conductive layer; forming a chalcogenide glass layer over said first conductive layer; forming a metal-containing layer over said chalcogenide glass layer; forming a second conductive layer over said metal-containing layer; forming a silver layer provided between said first and second conductive layers; and,
76 applying a negative voltage of absolute amplitude greater than the erase potential of said device across said first and second conductive layers causing said device to operate in constant current mode, wherein one of the conductive layer's possesses a lower potential than the other conductive layer.
130. A method as in claim 129, wherein said chalcogenide glass layer is a GeχSeιoo-χ layer having a stoichiometry from about GeisSes∑ to about Ge43Ses .
131. A method as in claim 130, wherein said chalcogenide glass layer has a stoichiometry of about Ge-oSeβo.
132. A method as in claim 130, wherein said chalcogenide glass layer is about 150 A to about 400 A thick.
133. A method as in claim 132, wherein said chalcogenide glass layer is about 250 A thick.
134. A method as in claim 129, wherein said metal-containing layer is a silver-selenide layer.
135. A method as in claim 129, wherein said metal-containing layer is a chalcogenide layer containing Ag.
136. A method as in claim 135, wherein said chalcogenide layer is selected from the group consisting of O, S, Se, Te, Ge, and Po.
137. A method as in claim 129, wherein said metal-containing layer is about 200 A to about 2000 A thick.
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138. A method as in claim 137, wherein said metal-containing layer is about 600 A thick.
139. A method as in claim 129, wherein said first and second conductive layer comprises a conductive material such as, one or more of tungsten, nickel, tantalum, tantalum nitride, copper, aluminum, platinum, silver, or titanium nitride.
140. A method as in claim 129, further comprising applying a negative voltage of absolute amplitude greater than the erase potential of said device to said conductive layer having the lower potential within the range from about - 800 mV to about -2.0 V.
141. A method as in claim 140, wherein said negative voltage is applied within a pulse duration range of about 8 ns to about 30 ns.
142. A method as in claim 129, further comprising forming a second chalcogenide glass layer.
143. A method as in claim 142, wherein said second chalcogenide glass layer is a GexSeioo-x layer having a stoichiometry from about GeisSes∑ to about
144. A method as in claim 143, wherein said second chalcogenide glass layer has a stoichiometry of about Ge4oSe6o.
145. A method as in claim 142, wherein said second chalcogenide glass layer is about 50 A to about 500 A thick.
78
146. A method as in claim 145, wherein said second chalcogenide glass layer is about 150 A thick.
147. A method as in claim 142, wherein said second chalcogenide glass layer is provided in between said metal-containing layer and said second conductive layer.
148. A method as in claim 129, wherein said device maintains a constant current over an applied voltage range of at least 700 mV.
149. A method as in claim 129, further comprising a voltage source in which said negative voltage is applied from.
150. A method of altering the constant current value in a constant current device, said method comprising: providing a constant current device placed between at least two electrodes, wherein at least one electrode has a lower potential than said other electrode; applying to said lower electrode having a lower potential a negative voltage of absolute amplitude more negative than a negative threshold voltage of said constant current device, wherein said act of applying said more negative voltage raises the existing constant current limit of said constant current device.
151. A method as in claim 150, further comprises applying a voltage slightly more negative than the upper voltage limit range for said existing constant current in said device.
79
152. A method as in claim 151, wherein said applied negative voltage is the breakdown voltage.
153. A method as in claim 152, further comprising applying a breakdown voltage within the range of about -800 mV to about -2.0 V.
154. A method as in claim 153, wherein said breakdown voltage is applied within a pulse duration range of about 8 ns to about 30 ns.
155. A method of permanently converting a chalcogenide memory device into a chalcogenide constant current device, said method comprising: providing a chalcogenide memory device between at least first and second electrodes, wherein at least one electrode has a lower potential than the other electrode; applying a negative potential of absolute amplitude to said electrode having a lower potential from a voltage source to said chalcogenide memory device that is more negative than an erase potential of said device.
156. A method as in claim 155, further comprising applying a negative potential of absolute amplitude greater than the erase potential of said chalcogenide memory device to said electrode having a lower potential within the range from about -800 mV to about -2.0 N.
157. The method as in claim 156, wherein said negative potential is applied within a pulse duration range of about 8 ns to about 30 ns.
80
158. A method as in claim 155, wherein said chalcogenide memory device permanently converts into a constant current device.
159. A method of changing the constant current value in a constant current device, said method comprising: providing a constant current device between first and second electrodes, wherein at least one electrode has a lower potential than the other electrode; and applying to said electrode having a lower potential a positive potential thereby changing the constant current value of said constant current device.
160. A method as in claim 159, wherein said step of applying a positive potential decreases the constant current value of said device.
161. A method of changing the constant current value in a constant current device, said method comprising: providing a constant current device between at least a first and second electrode, wherein at least one electrode has a lower potential than the other electrode; and applying to said electrode having the lower potential a positive voltage of larger absolute amplitude than said constant current device's voltage threshold to said constant current device, wherein said positive voltage decreases the constant current amplitude.
81
162. A method for utilizing a constant current device as an analog memory device, said method comprising: providing a constant current device between a first and second electrode, wherein at least one electrode is connected to a voltage source; applying at least one positive voltage across said first and second electrodes to said constant current device, wherein said at least one positive voltage creates at least one constant current value; reading said at least one constant current value; and saving said at least one read constant current value.
163. A method as in claim 162, wherein said saving at least one constant current value corresponds to a memory state.
164. A method as in claim 162, further comprising storing said at least one constant current value as a memory state for said device.
165. A method for using a constant current device as an analog memory device, said method comprising: reading at least one constant current value of said constant current device; and storing said at least one constant current value of said device, wherein said at least one constant current value corresponds to a memory state of said device.
82
166. A method as in claim 165, further comprising applying a plurality of repeated pulses of similar or less amplitudes that corresponds to different constant current values of said device, wherein said different constant current values of said device are read and stored as different memory states for said device.
167. A method as in claim 166, wherein said step of applying a plurality of repeated pulses results in an analog assortment of states for said device.
168. A method for increasing the amplitude of a constant current device's constant current value, said method comprising: providing a constant current device between two electrodes, wherein one of the electrode's has a lower potential than the other electrode; and applying to the electrode having a lower potential a negative potential to said constant current device.
169. A method as in claim 168, wherein said applied negative voltage is more negative than the negative threshold voltage of said device.
170. A method as in claim 168, wherein repeated pulses of similar or less amplitude of said applied negative potential is applied to said device thereby further increasing the amplitude of said device's constant current value.
171. A method as in claim 168, wherein said applied negative voltage induces a more negative constant current value in said device.
83
172. A method for decreasing the amplitude of a constant current device's constant current value, said method comprising: providing a constant current device between two electrodes, wherein at least one of the electrode has a lower potential than the other electrode; and applying to the electrode having a lower potential a positive potential to said constant current device.
173. A method as in claim 172, wherein repeated pulses of similar or less amplitude of said applied positive potential is applied to said device thereby further decreasing the amplitude of said device's constant current value.
174. A method as in claim 172, wherein said applied positive voltage induces a more positive constant current value in said device.
175. A method as in claim 172, wherein said applied positive voltage is more positive than a negative threshold voltage of said device.
176. A method of forming a constant current state for a constant current device, said method comprising: applying a negative potential of absolute amplitude greater than the erase potential of said device to said device, wherein said negative potential is more negative than the negative threshold voltage of said device; and applying a positive potential which is of larger absolute amplitude than a voltage threshold of said device to said device, wherein said positive potential is more positive than the negative threshold voltage of said device,
84
177. A method as in claim 176, wherein repeated pulses of similar or less amplitude of said applied negative potential is applied to said device to increase the amplitude of said device's constant current value.
178. A method as in claim 176, wherein repeated pulses of similar or less amplitude of said applied positive potential is applied to said device to decrease the amplitude of said device's constant current value.
179. A method as in claim 176, wherein said step of applying a positive and negative potential forms a constant current state for said device.
180. A method as in claim 179, further comprising reading and storing said applied positive and negative potentials to form an analog assortment of states for said device.
85
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