WO2004081986A3 - Method to planarize and reduce defect density of silicon germanium - Google Patents

Method to planarize and reduce defect density of silicon germanium Download PDF

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Publication number
WO2004081986A3
WO2004081986A3 PCT/US2004/007385 US2004007385W WO2004081986A3 WO 2004081986 A3 WO2004081986 A3 WO 2004081986A3 US 2004007385 W US2004007385 W US 2004007385W WO 2004081986 A3 WO2004081986 A3 WO 2004081986A3
Authority
WO
WIPO (PCT)
Prior art keywords
planarize
silicon germanium
defect density
reduce defect
substrate
Prior art date
Application number
PCT/US2004/007385
Other languages
French (fr)
Other versions
WO2004081986A2 (en
Inventor
Pierre Tomasini
Nyles Cody
Chantal Arena
Original Assignee
Asm Inc
Pierre Tomasini
Nyles Cody
Chantal Arena
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Inc, Pierre Tomasini, Nyles Cody, Chantal Arena filed Critical Asm Inc
Priority to JP2006507063A priority Critical patent/JP5288707B2/en
Publication of WO2004081986A2 publication Critical patent/WO2004081986A2/en
Publication of WO2004081986A3 publication Critical patent/WO2004081986A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Abstract

A method for blanket depositing a SiGe film (30) comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate (10) under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe (30) onto the substrate (10), whether patterned or un-patterned.
PCT/US2004/007385 2003-03-12 2004-03-11 Method to planarize and reduce defect density of silicon germanium WO2004081986A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006507063A JP5288707B2 (en) 2003-03-12 2004-03-11 Method for reducing planarization and defect density in silicon germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45486703P 2003-03-12 2003-03-12
US60/454,867 2003-03-12

Publications (2)

Publication Number Publication Date
WO2004081986A2 WO2004081986A2 (en) 2004-09-23
WO2004081986A3 true WO2004081986A3 (en) 2004-11-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/007385 WO2004081986A2 (en) 2003-03-12 2004-03-11 Method to planarize and reduce defect density of silicon germanium

Country Status (3)

Country Link
US (1) US7427556B2 (en)
JP (2) JP5288707B2 (en)
WO (1) WO2004081986A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4689969B2 (en) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Preparation of Group IVA and Group VIA compounds
JP4714422B2 (en) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Method for depositing germanium-containing film and vapor delivery device
JP4954448B2 (en) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Organometallic compounds
KR100679737B1 (en) * 2003-05-19 2007-02-07 도시바세라믹스가부시키가이샤 A method for manufacturing a silicon substrate having a distorted layer
DE102004053307B4 (en) * 2004-11-04 2010-01-07 Siltronic Ag A multilayer structure comprising a substrate and a heteroepitaxially deposited layer of silicon and germanium thereon, and a method of making the same
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
FR2900277B1 (en) * 2006-04-19 2008-07-11 St Microelectronics Sa PROCESS FOR FORMING A SILICON-BASED MONOCRYSTALLINE PORTION
JP2010043531A (en) 2008-08-08 2010-02-25 Denso Corp Fuel injection control device for internal combustion engine
US8765508B2 (en) 2008-08-27 2014-07-01 Soitec Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
EP2502266B1 (en) 2009-11-18 2020-03-04 Soitec Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
FR2968830B1 (en) 2010-12-08 2014-03-21 Soitec Silicon On Insulator IMPROVED MATRIX LAYERS FOR THE HETEROEPITAXIAL DEPOSITION OF NITRIDE III SEMICONDUCTOR MATERIALS USING HVPE PROCESSES
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
FR2968678B1 (en) 2010-12-08 2015-11-20 Soitec Silicon On Insulator METHODS OF FORMING GROUP III NITRIDE MATERIALS AND STRUCTURES FORMED THEREFROM
JP5488675B2 (en) * 2012-11-14 2014-05-14 ソニー株式会社 Manufacturing method of semiconductor device
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9735062B1 (en) 2016-06-03 2017-08-15 International Business Machines Corporation Defect reduction in channel silicon germanium on patterned silicon
TW202240012A (en) * 2021-03-05 2022-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Film deposition systems and methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709901B1 (en) * 2000-03-13 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having stick drivers and a method of manufacturing the same

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729645A (en) 1964-12-16 1973-04-24 Gen Electric Photoconductive camera tubes and methods of manufacture
DE1789021C3 (en) 1967-09-25 1975-04-10 Hitachi, Ltd., Tokio Zener diode and process for its manufacture
US3720877A (en) 1970-09-25 1973-03-13 Ibm Metal vapor discharge tube using metal and semi-metal compounds in a discharge tube
US3737739A (en) 1971-02-22 1973-06-05 Ibm Single crystal regions in dielectric substrate
US3984718A (en) 1971-12-08 1976-10-05 Owens-Illinois, Inc. Gas discharge dielectric containing germanium or tin
US3984857A (en) 1973-06-13 1976-10-05 Harris Corporation Heteroepitaxial displays
US3985590A (en) 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US4461820A (en) 1981-02-06 1984-07-24 Canon Kabushiki Kaisha Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
JPS6028826A (en) 1983-07-26 1985-02-14 Hiroshi Suzuki Compound film having surface layer of thin film of cage zeolite and preparation thereof
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
JPS60221322A (en) 1984-04-13 1985-11-06 Mitsui Toatsu Chem Inc Preparation of germanes
JPH0626181B2 (en) * 1985-06-24 1994-04-06 日本電気株式会社 Method for manufacturing semiconductor substrate
JPS6217004A (en) 1985-07-12 1987-01-26 Mitsui Toatsu Chem Inc Preparation of germane
JPS6262529A (en) * 1985-09-12 1987-03-19 Toppan Printing Co Ltd Forming method for silicon nitride film
US4868014A (en) 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US5366554A (en) 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
ES2022322B3 (en) 1986-02-05 1991-12-01 Canon Kk LIGHT RECEIVING MEMBER FOR ELECTROPHOTOGRAPHY
US5294285A (en) 1986-02-07 1994-03-15 Canon Kabushiki Kaisha Process for the production of functional crystalline film
JPS632891A (en) * 1986-06-19 1988-01-07 Nec Corp Vapor phase epitaxy
US4983274A (en) 1986-12-04 1991-01-08 Mobil Oil Corp. Shape selective crystalline silicate zeolite containing intermetallic component and use as catalyst in hydrocarbon conversions
US4803186A (en) 1986-12-04 1989-02-07 Mobil Oil Corporation Shape selective crystalline silicate zeolite containing intermetallic component and use as catalyst in hydrocarbon conversions
JPS63285923A (en) 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk Manufacture of silicon-germanium alloy
US5112439A (en) 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
US5037775A (en) 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
JPH03184324A (en) * 1989-12-13 1991-08-12 Canon Inc Polycrystalline sige thin-film forming method
US5316958A (en) 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
FR2678647A1 (en) 1991-07-05 1993-01-08 Centre Nat Rech Scient PROCESS FOR PRODUCING A MESH GRADIENT CRYSTAL.
JP2912059B2 (en) * 1991-08-27 1999-06-28 山形日本電気株式会社 Atmospheric pressure CVD equipment
US5576247A (en) 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
US5646073A (en) 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product
US5563428A (en) 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
JP2953567B2 (en) 1997-02-06 1999-09-27 日本電気株式会社 Method for manufacturing semiconductor device
US6242080B1 (en) 1997-07-09 2001-06-05 Canon Kabushiki Kaisha Zinc oxide thin film and process for producing the film
FR2783254B1 (en) 1998-09-10 2000-11-10 France Telecom METHOD FOR OBTAINING A LAYER OF MONOCRYSTALLINE GERMANIUM ON A MONOCRYSTALLINE SILICON SUBSTRATE, AND PRODUCTS OBTAINED
JP3986202B2 (en) * 1999-03-25 2007-10-03 株式会社アルバック Selective growth method
JP3324573B2 (en) * 1999-07-19 2002-09-17 日本電気株式会社 Semiconductor device manufacturing method and manufacturing apparatus
JP2001338931A (en) * 1999-10-14 2001-12-07 Hitachi Ltd Bipolar transistor and its manufacturing method
EP1399970A2 (en) * 2000-12-04 2004-03-24 Amberwave Systems Corporation Cmos inverter circuits utilizing strained silicon surface channel mosfets
JP2002237590A (en) * 2001-02-09 2002-08-23 Univ Tohoku Mos field effect transistor
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
KR101050377B1 (en) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 Improved process for deposition of semiconductor films
US6653658B2 (en) 2001-07-05 2003-11-25 Isonics Corporation Semiconductor wafers with integrated heat spreading layer
US6646073B2 (en) 2001-07-24 2003-11-11 Eastman Chemical Company Process for the polymerization of ethylene and interpolymers thereof
JP3660897B2 (en) 2001-09-03 2005-06-15 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
US6875279B2 (en) 2001-11-16 2005-04-05 International Business Machines Corporation Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20030124818A1 (en) 2001-12-28 2003-07-03 Applied Materials, Inc. Method and apparatus for forming silicon containing films
US6723622B2 (en) 2002-02-21 2004-04-20 Intel Corporation Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
US6451641B1 (en) 2002-02-27 2002-09-17 Advanced Micro Devices, Inc. Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
KR20050032527A (en) 2002-06-19 2005-04-07 메사추세츠 인스티튜트 오브 테크놀로지 Ge photodetectors
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709901B1 (en) * 2000-03-13 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having stick drivers and a method of manufacturing the same

Also Published As

Publication number Publication date
JP2012033944A (en) 2012-02-16
US7427556B2 (en) 2008-09-23
JP5288707B2 (en) 2013-09-11
JP2006521015A (en) 2006-09-14
US20040259333A1 (en) 2004-12-23
WO2004081986A2 (en) 2004-09-23

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