WO2004084271A3 - Method and apparatus for thermally insulating adjacent temperature controlled processing chambers - Google Patents
Method and apparatus for thermally insulating adjacent temperature controlled processing chambers Download PDFInfo
- Publication number
- WO2004084271A3 WO2004084271A3 PCT/US2004/007863 US2004007863W WO2004084271A3 WO 2004084271 A3 WO2004084271 A3 WO 2004084271A3 US 2004007863 W US2004007863 W US 2004007863W WO 2004084271 A3 WO2004084271 A3 WO 2004084271A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- temperature controlled
- thermally insulating
- processing chambers
- controlled processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006507202A JP4546460B2 (en) | 2003-03-17 | 2004-03-16 | Dual chamber apparatus and manufacturing method thereof |
EP04721063A EP1604386A2 (en) | 2003-03-17 | 2004-03-16 | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45464403P | 2003-03-17 | 2003-03-17 | |
US60/454,644 | 2003-03-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004084271A2 WO2004084271A2 (en) | 2004-09-30 |
WO2004084271A3 true WO2004084271A3 (en) | 2004-11-04 |
Family
ID=33029908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/007863 WO2004084271A2 (en) | 2003-03-17 | 2004-03-16 | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
Country Status (5)
Country | Link |
---|---|
US (1) | US7214274B2 (en) |
EP (1) | EP1604386A2 (en) |
JP (1) | JP4546460B2 (en) |
TW (1) | TWI252504B (en) |
WO (1) | WO2004084271A2 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US7877161B2 (en) | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
WO2005015613A2 (en) * | 2003-08-07 | 2005-02-17 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals |
US7651583B2 (en) * | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
JP4763786B2 (en) * | 2006-06-19 | 2011-08-31 | 日本バルカー工業株式会社 | Valve body and gate valve device |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
JP2008192802A (en) * | 2007-02-05 | 2008-08-21 | Spansion Llc | Semiconductor manufacturing device, and its manufacturing method |
US20080217293A1 (en) * | 2007-03-06 | 2008-09-11 | Tokyo Electron Limited | Processing system and method for performing high throughput non-plasma processing |
US7977249B1 (en) | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
US8303715B2 (en) * | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput thermal treatment system and method of operating |
US8287688B2 (en) * | 2008-07-31 | 2012-10-16 | Tokyo Electron Limited | Substrate support for high throughput chemical treatment system |
US8323410B2 (en) * | 2008-07-31 | 2012-12-04 | Tokyo Electron Limited | High throughput chemical treatment system and method of operating |
US8303716B2 (en) * | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput processing system for chemical treatment and thermal treatment and method of operating |
US7981763B1 (en) | 2008-08-15 | 2011-07-19 | Novellus Systems, Inc. | Atomic layer removal for high aspect ratio gapfill |
US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
US20110180097A1 (en) * | 2010-01-27 | 2011-07-28 | Axcelis Technologies, Inc. | Thermal isolation assemblies for wafer transport apparatus and methods of use thereof |
USD734377S1 (en) * | 2013-03-28 | 2015-07-14 | Hirata Corporation | Top cover of a load lock chamber |
JP6227976B2 (en) * | 2013-10-30 | 2017-11-08 | 東京エレクトロン株式会社 | Substrate processing apparatus and shutter member |
JP5876463B2 (en) * | 2013-12-03 | 2016-03-02 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
JP6386394B2 (en) * | 2015-02-18 | 2018-09-05 | 東芝メモリ株式会社 | Compound process equipment |
JP6899697B2 (en) | 2017-05-11 | 2021-07-07 | 東京エレクトロン株式会社 | Gate valve device and board processing system |
WO2019226341A1 (en) | 2018-05-25 | 2019-11-28 | Lam Research Corporation | Thermal atomic layer etch with rapid temperature cycling |
EP3821457A4 (en) | 2018-07-09 | 2022-04-13 | Lam Research Corporation | Electron excitation atomic layer etch |
TWI775691B (en) * | 2021-12-02 | 2022-08-21 | 奈盾科技股份有限公司 | Apparatus and method for repairing defects of semiconductor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0818807A2 (en) * | 1996-07-10 | 1998-01-14 | Eaton Corporation | Dual vertical thermal processing furnace |
JP2000021799A (en) * | 1998-07-01 | 2000-01-21 | Tokyo Electron Ltd | Single-wafer processing type treatment apparatus |
US6198074B1 (en) * | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
Family Cites Families (19)
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---|---|---|---|---|
NL8900544A (en) * | 1989-03-06 | 1990-10-01 | Asm Europ | TREATMENT SYSTEM, TREATMENT VESSEL AND METHOD FOR TREATING A SUBSTRATE. |
US5223113A (en) * | 1990-07-20 | 1993-06-29 | Tokyo Electron Limited | Apparatus for forming reduced pressure and for processing object |
JP3043848B2 (en) * | 1990-07-20 | 2000-05-22 | 東京エレクトロン株式会社 | Processing equipment |
JPH04360527A (en) * | 1991-06-07 | 1992-12-14 | Tokyo Electron Ltd | Etching method and etching equipment |
US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
JP3507220B2 (en) * | 1995-09-14 | 2004-03-15 | 株式会社日立国際電気 | Semiconductor manufacturing equipment |
US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
US6074951A (en) * | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
US5876879A (en) * | 1997-05-29 | 1999-03-02 | International Business Machines Corporation | Oxide layer patterned by vapor phase etching |
JP4067633B2 (en) * | 1998-03-06 | 2008-03-26 | 東京エレクトロン株式会社 | Processing equipment |
US6469780B1 (en) * | 1998-12-21 | 2002-10-22 | Air Products And Chemicals, Inc. | Apparatus and method for detecting particles in reactive and toxic gases |
US20010016226A1 (en) * | 1999-12-15 | 2001-08-23 | International Business Machines Corporation | Method for preparing the surface of a dielectric |
US6245619B1 (en) * | 2000-01-21 | 2001-06-12 | International Business Machines Corporation | Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devices |
US6271094B1 (en) * | 2000-02-14 | 2001-08-07 | International Business Machines Corporation | Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance |
US6335261B1 (en) * | 2000-05-31 | 2002-01-01 | International Business Machines Corporation | Directional CVD process with optimized etchback |
US6926843B2 (en) * | 2000-11-30 | 2005-08-09 | International Business Machines Corporation | Etching of hard masks |
US20020195201A1 (en) * | 2001-06-25 | 2002-12-26 | Emanuel Beer | Apparatus and method for thermally isolating a heat chamber |
US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
US6814813B2 (en) * | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
-
2003
- 2003-11-12 US US10/705,397 patent/US7214274B2/en not_active Expired - Lifetime
-
2004
- 2004-03-16 JP JP2006507202A patent/JP4546460B2/en not_active Expired - Lifetime
- 2004-03-16 EP EP04721063A patent/EP1604386A2/en not_active Withdrawn
- 2004-03-16 WO PCT/US2004/007863 patent/WO2004084271A2/en active Application Filing
- 2004-03-17 TW TW093107044A patent/TWI252504B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0818807A2 (en) * | 1996-07-10 | 1998-01-14 | Eaton Corporation | Dual vertical thermal processing furnace |
US6198074B1 (en) * | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
JP2000021799A (en) * | 1998-07-01 | 2000-01-21 | Tokyo Electron Ltd | Single-wafer processing type treatment apparatus |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) * |
Also Published As
Publication number | Publication date |
---|---|
JP2006521016A (en) | 2006-09-14 |
TWI252504B (en) | 2006-04-01 |
WO2004084271A2 (en) | 2004-09-30 |
TW200423211A (en) | 2004-11-01 |
US20040182324A1 (en) | 2004-09-23 |
US7214274B2 (en) | 2007-05-08 |
EP1604386A2 (en) | 2005-12-14 |
JP4546460B2 (en) | 2010-09-15 |
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