WO2004088739A3 - Real-time in-line testing of semiconductor wafers - Google Patents

Real-time in-line testing of semiconductor wafers Download PDF

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Publication number
WO2004088739A3
WO2004088739A3 PCT/US2004/008862 US2004008862W WO2004088739A3 WO 2004088739 A3 WO2004088739 A3 WO 2004088739A3 US 2004008862 W US2004008862 W US 2004008862W WO 2004088739 A3 WO2004088739 A3 WO 2004088739A3
Authority
WO
WIPO (PCT)
Prior art keywords
probe assembly
real
wafer
time
semiconductor wafers
Prior art date
Application number
PCT/US2004/008862
Other languages
French (fr)
Other versions
WO2004088739A2 (en
Inventor
Edward Tsidilkovski
Kenneth Steeples
Original Assignee
Qc Solutions Inc
Edward Tsidilkovski
Kenneth Steeples
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qc Solutions Inc, Edward Tsidilkovski, Kenneth Steeples filed Critical Qc Solutions Inc
Priority to JP2006507489A priority Critical patent/JP2006521701A/en
Priority to EP04758224A priority patent/EP1611608A2/en
Publication of WO2004088739A2 publication Critical patent/WO2004088739A2/en
Publication of WO2004088739A3 publication Critical patent/WO2004088739A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.
PCT/US2004/008862 2003-03-28 2004-03-23 Real-time in-line testing of semiconductor wafers WO2004088739A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006507489A JP2006521701A (en) 2003-03-28 2004-03-23 Real-time and in-line testing of semiconductor wafers
EP04758224A EP1611608A2 (en) 2003-03-28 2004-03-23 Real-time in-line testing of semiconductor wafers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/402,621 2003-03-28
US10/402,621 US6911350B2 (en) 2003-03-28 2003-03-28 Real-time in-line testing of semiconductor wafers

Publications (2)

Publication Number Publication Date
WO2004088739A2 WO2004088739A2 (en) 2004-10-14
WO2004088739A3 true WO2004088739A3 (en) 2005-02-03

Family

ID=32989755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/008862 WO2004088739A2 (en) 2003-03-28 2004-03-23 Real-time in-line testing of semiconductor wafers

Country Status (6)

Country Link
US (1) US6911350B2 (en)
EP (1) EP1611608A2 (en)
JP (1) JP2006521701A (en)
CN (1) CN1777984A (en)
TW (1) TW200507137A (en)
WO (1) WO2004088739A2 (en)

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US7029933B2 (en) * 2004-06-22 2006-04-18 Tech Semiconductor Singapore Pte. Ltd. Method for monitoring ion implant doses
JP4656887B2 (en) * 2004-07-27 2011-03-23 富士通セミコンダクター株式会社 Inspection method of semiconductor device
JP2008533742A (en) * 2005-03-14 2008-08-21 キューシー ソリューションズ， インコーポレイテッド Semiconductor wafer measurement apparatus and method
US20080036464A1 (en) * 2006-07-27 2008-02-14 Qc Solutions, Inc. Probes and methods for semiconductor wafer analysis
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US20090309623A1 (en) * 2008-06-11 2009-12-17 Amethyst Research, Inc. Method for Assessment of Material Defects
US7898280B2 (en) * 2008-09-08 2011-03-01 Emil Kamieniecki Electrical characterization of semiconductor materials
MY186210A (en) * 2010-07-23 2021-06-30 First Solar Inc In-line metrology system and method
CN101969036B (en) * 2010-07-30 2016-03-23 上海华虹宏力半导体制造有限公司 Improve the method for utilization factor of monitoring chip
US9234843B2 (en) 2011-08-25 2016-01-12 Alliance For Sustainable Energy, Llc On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging
TWI455224B (en) * 2012-04-18 2014-10-01 Advanced Ion Beam Tech Inc System and method for wafer surface charge monitoring
CN103439641B (en) * 2013-09-06 2016-02-10 广州市昆德科技有限公司 Based on semiconductor material parameter tester and the method for testing of surface photovoltaic method
JP2017508272A (en) * 2013-12-22 2017-03-23 リハイトン エレクトロニクス， インコーポレイテッドＬｅｈｉｇｈｔｏｎ Ｅｌｅｃｔｒｏｎｉｃｓ，Ｉｎｃ． System and method for contactless detection of the maximum open circuit voltage of a photovoltaic semiconductor
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
US10480935B2 (en) 2016-12-02 2019-11-19 Alliance For Sustainable Energy, Llc Thickness mapping using multispectral imaging

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Also Published As

Publication number Publication date
JP2006521701A (en) 2006-09-21
EP1611608A2 (en) 2006-01-04
US6911350B2 (en) 2005-06-28
TW200507137A (en) 2005-02-16
US20040191936A1 (en) 2004-09-30
CN1777984A (en) 2006-05-24
WO2004088739A2 (en) 2004-10-14

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