WO2004093134A3 - Light emitting systems - Google Patents

Light emitting systems Download PDF

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Publication number
WO2004093134A3
WO2004093134A3 PCT/US2004/010671 US2004010671W WO2004093134A3 WO 2004093134 A3 WO2004093134 A3 WO 2004093134A3 US 2004010671 W US2004010671 W US 2004010671W WO 2004093134 A3 WO2004093134 A3 WO 2004093134A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
light emitting
pattern
emitting systems
Prior art date
Application number
PCT/US2004/010671
Other languages
French (fr)
Other versions
WO2004093134A2 (en
Inventor
Alexei A Erchak
Original Assignee
Luminus Devices Inc
Alexei A Erchak
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/724,004 external-priority patent/US6831302B2/en
Priority claimed from US10/724,029 external-priority patent/US7098589B2/en
Priority claimed from US10/724,005 external-priority patent/US7083993B2/en
Priority claimed from US10/724,033 external-priority patent/US7262550B2/en
Priority claimed from US10/724,006 external-priority patent/US7084434B2/en
Priority claimed from US10/723,987 external-priority patent/US7211831B2/en
Priority claimed from US10/724,015 external-priority patent/US7521854B2/en
Priority to CN2004800102495A priority Critical patent/CN1774811B/en
Priority to JP2006509771A priority patent/JP2006523956A/en
Priority to EP04759197A priority patent/EP1614123A4/en
Application filed by Luminus Devices Inc, Alexei A Erchak filed Critical Luminus Devices Inc
Publication of WO2004093134A2 publication Critical patent/WO2004093134A2/en
Publication of WO2004093134A3 publication Critical patent/WO2004093134A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

The invention relates to light-emitting devices, and related components, systems and methods. The invention features a light-emitting device (100) that includes a multi-layer stack of materials (122). The multi-layer stack of materials includes a light-generating region (130) and a first layer supported by the light generating region. The surface of the first layer has a dielectric function that varies spatially according to a pattern, and the pattern has an ideal lattice constant and detuning parameter with a value greater than zero.
PCT/US2004/010671 2003-04-15 2004-04-06 Light emitting systems WO2004093134A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2004800102495A CN1774811B (en) 2003-04-15 2004-04-06 Light emitting systems
JP2006509771A JP2006523956A (en) 2003-04-15 2004-04-06 Light emitting element
EP04759197A EP1614123A4 (en) 2003-04-15 2004-04-06 Light emitting systems

Applications Claiming Priority (36)

Application Number Priority Date Filing Date Title
US46288903P 2003-04-15 2003-04-15
US60/462,889 2003-04-15
US47419903P 2003-05-29 2003-05-29
US60/474,199 2003-05-29
US47568203P 2003-06-04 2003-06-04
US60/475,682 2003-06-04
US50367103P 2003-09-17 2003-09-17
US50366103P 2003-09-17 2003-09-17
US50365403P 2003-09-17 2003-09-17
US50365303P 2003-09-17 2003-09-17
US50367203P 2003-09-17 2003-09-17
US60/503,671 2003-09-17
US60/503,654 2003-09-17
US60/503,672 2003-09-17
US60/503,653 2003-09-17
US60/503,661 2003-09-17
US51380703P 2003-10-23 2003-10-23
US60/513,807 2003-10-23
US51476403P 2003-10-27 2003-10-27
US60/514,764 2003-10-27
US10/724,029 US7098589B2 (en) 2003-04-15 2003-11-26 Light emitting devices with high light collimation
US10/724,005 US7083993B2 (en) 2003-04-15 2003-11-26 Methods of making multi-layer light emitting devices
US10/724,033 US7262550B2 (en) 2003-04-15 2003-11-26 Light emitting diode utilizing a physical pattern
US10/724,015 2003-11-26
US10/724,004 2003-11-26
US10/724,006 2003-11-26
US10/724,005 2003-11-26
US10/724,029 2003-11-26
US10/724,033 2003-11-26
US10/724,004 US6831302B2 (en) 2003-04-15 2003-11-26 Light emitting devices with improved extraction efficiency
US10/724,006 US7084434B2 (en) 2003-04-15 2003-11-26 Uniform color phosphor-coated light-emitting diode
US10/723,987 2003-11-26
US10/723,987 US7211831B2 (en) 2003-04-15 2003-11-26 Light emitting device with patterned surfaces
US10/724,015 US7521854B2 (en) 2003-04-15 2003-11-26 Patterned light emitting devices and extraction efficiencies related to the same
US10/735,498 2003-12-12
US10/735,498 US7166871B2 (en) 2003-04-15 2003-12-12 Light emitting systems

Publications (2)

Publication Number Publication Date
WO2004093134A2 WO2004093134A2 (en) 2004-10-28
WO2004093134A3 true WO2004093134A3 (en) 2005-06-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010671 WO2004093134A2 (en) 2003-04-15 2004-04-06 Light emitting systems

Country Status (5)

Country Link
US (2) US7166871B2 (en)
EP (1) EP1614123A4 (en)
JP (2) JP2006523956A (en)
KR (2) KR100955245B1 (en)
WO (1) WO2004093134A2 (en)

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US20070187703A1 (en) 2007-08-16
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US20050087754A1 (en) 2005-04-28
US7166871B2 (en) 2007-01-23
EP1614123A2 (en) 2006-01-11
KR20100009604A (en) 2010-01-27
KR100955245B1 (en) 2010-04-29
EP1614123A4 (en) 2010-12-08
JP2011187980A (en) 2011-09-22

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