WO2004097063A3 - Method for producing silicon oxide film and method for producing optical multilayer film - Google Patents
Method for producing silicon oxide film and method for producing optical multilayer film Download PDFInfo
- Publication number
- WO2004097063A3 WO2004097063A3 PCT/JP2004/005875 JP2004005875W WO2004097063A3 WO 2004097063 A3 WO2004097063 A3 WO 2004097063A3 JP 2004005875 W JP2004005875 W JP 2004005875W WO 2004097063 A3 WO2004097063 A3 WO 2004097063A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- producing
- silicon oxide
- oxide film
- film
- optical multilayer
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 4
- 230000003287 optical effect Effects 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000005477 sputtering target Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE602004031832T DE602004031832D1 (en) | 2003-04-25 | 2004-04-23 | METHOD FOR PRODUCING A SILICON OXIDE FILM U |
EP04729212A EP1627095B1 (en) | 2003-04-25 | 2004-04-23 | METHOD FOR PRODUCING SILICON OXIDE FILM AND an OPTICAL MULTILAYER FILM |
KR1020057019949A KR101073415B1 (en) | 2003-04-25 | 2005-10-20 | Method for producing silicon oxide film and method for producing optical multilayer film |
US11/256,941 US7842168B2 (en) | 2003-04-25 | 2005-10-25 | Method for producing silicon oxide film and method for producing optical multilayer film |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-121527 | 2003-04-25 | ||
JP2003121527 | 2003-04-25 | ||
JP2003339748 | 2003-09-30 | ||
JP2003-339748 | 2003-09-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/256,941 Continuation US7842168B2 (en) | 2003-04-25 | 2005-10-25 | Method for producing silicon oxide film and method for producing optical multilayer film |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004097063A2 WO2004097063A2 (en) | 2004-11-11 |
WO2004097063A3 true WO2004097063A3 (en) | 2005-02-24 |
Family
ID=33422040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/005875 WO2004097063A2 (en) | 2003-04-25 | 2004-04-23 | Method for producing silicon oxide film and method for producing optical multilayer film |
Country Status (6)
Country | Link |
---|---|
US (1) | US7842168B2 (en) |
EP (1) | EP1627095B1 (en) |
JP (1) | JP4486838B2 (en) |
KR (1) | KR101073415B1 (en) |
DE (1) | DE602004031832D1 (en) |
WO (1) | WO2004097063A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7820296B2 (en) | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coating technology |
US7862910B2 (en) | 2006-04-11 | 2011-01-04 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
USRE43817E1 (en) | 2004-07-12 | 2012-11-20 | Cardinal Cg Company | Low-maintenance coatings |
Families Citing this family (15)
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JP4533815B2 (en) * | 2005-07-08 | 2010-09-01 | 株式会社東芝 | Sputtering target and optical thin film manufacturing method using the same |
US7901778B2 (en) * | 2006-01-13 | 2011-03-08 | Saint-Gobain Performance Plastics Corporation | Weatherable multilayer film |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
JP2008152839A (en) * | 2006-12-15 | 2008-07-03 | Toshiba Corp | Optical recording medium and manufacturing method of optical recording medium |
JP2009007636A (en) * | 2007-06-28 | 2009-01-15 | Sony Corp | Low refractive index film and method for depositing the same, and antireflection film |
JP5078470B2 (en) | 2007-07-05 | 2012-11-21 | ペンタックスリコーイメージング株式会社 | Optical low-pass filter and imaging apparatus including the same |
KR20090009612A (en) * | 2007-07-20 | 2009-01-23 | 엘지디스플레이 주식회사 | Method of forming inorganic insulating layer by sputtering |
JP2014114497A (en) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | Sputtering equipment |
JP6332109B2 (en) * | 2015-03-31 | 2018-05-30 | 信越化学工業株式会社 | Method for manufacturing halftone phase shift photomask blank |
JP6500791B2 (en) * | 2016-01-22 | 2019-04-17 | 信越化学工業株式会社 | Halftone phase shift photomask blank and method of manufacturing the same |
JP6677139B2 (en) * | 2016-09-28 | 2020-04-08 | 信越化学工業株式会社 | Manufacturing method of halftone phase shift type photomask blank |
EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
GB201701846D0 (en) * | 2017-02-03 | 2017-03-22 | Univ Manchester | Method of producing sputtered silicon oxide electrolyte |
JP7332324B2 (en) * | 2019-04-10 | 2023-08-23 | デクセリアルズ株式会社 | Inorganic polarizing plate, manufacturing method thereof, and optical device |
KR102176552B1 (en) * | 2020-06-19 | 2020-11-09 | 한화시스템 주식회사 | Hybrid type deformable mirror apparatus and driving method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109473A (en) * | 1994-10-14 | 1996-04-30 | Asahi Glass Co Ltd | Formation of silicon oxide film |
EP1176434A1 (en) * | 2000-07-27 | 2002-01-30 | Asahi Glass Company Ltd. | Substrate provide with antireflection films and its production method |
US20020117785A1 (en) * | 1999-10-13 | 2002-08-29 | Asahi Glass Company Limited | Sputtering target, process for its production and film forming method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996034124A1 (en) * | 1995-04-25 | 1996-10-31 | The Boc Group, Inc. | Sputtering system using cylindrical rotating magnetron electrically powered using alternating current |
DE19609970A1 (en) | 1996-03-14 | 1997-09-18 | Leybold Systems Gmbh | Device for applying thin layers on a substrate |
DE19610012B4 (en) * | 1996-03-14 | 2005-02-10 | Unaxis Deutschland Holding Gmbh | A method for stabilizing a working point in reactive sputtering in an oxygen-containing atmosphere |
JPH1129863A (en) | 1997-07-10 | 1999-02-02 | Canon Inc | Production of deposited film |
JP2000104161A (en) * | 1998-09-28 | 2000-04-11 | Bridgestone Corp | Method for controlling refractive index of dry plating film |
JP3774353B2 (en) | 2000-02-25 | 2006-05-10 | 株式会社シンクロン | Method and apparatus for forming metal compound thin film |
JP4614037B2 (en) | 2000-09-08 | 2011-01-19 | Agcセラミックス株式会社 | Cylindrical target |
US6744425B2 (en) * | 2000-12-26 | 2004-06-01 | Bridgestone Corporation | Transparent electroconductive film |
JP2003013216A (en) | 2001-06-27 | 2003-01-15 | Bridgestone Corp | Method for forming transparent thin film |
JP4280890B2 (en) | 2001-07-23 | 2009-06-17 | 旭硝子株式会社 | Sputtering apparatus and sputter deposition method |
US6896981B2 (en) * | 2001-07-24 | 2005-05-24 | Bridgestone Corporation | Transparent conductive film and touch panel |
JP2003121639A (en) | 2001-10-18 | 2003-04-23 | Bridgestone Corp | Band pass filter and method for manufacturing the same |
JP2003121636A (en) | 2001-10-18 | 2003-04-23 | Bridgestone Corp | Cut filter for near ir ray and method for manufacturing the same |
US20040240093A1 (en) * | 2001-10-18 | 2004-12-02 | Masato Yoshikawa | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
JP2003121605A (en) | 2001-10-18 | 2003-04-23 | Bridgestone Corp | Antireflection film and method for manufacturing the same |
US7709145B2 (en) * | 2004-11-12 | 2010-05-04 | Gm Global Technology Operations, Inc. | Hydrophilic surface modification of bipolar plate |
-
2004
- 2004-03-24 JP JP2004086299A patent/JP4486838B2/en not_active Expired - Lifetime
- 2004-04-23 WO PCT/JP2004/005875 patent/WO2004097063A2/en active Application Filing
- 2004-04-23 EP EP04729212A patent/EP1627095B1/en not_active Expired - Fee Related
- 2004-04-23 DE DE602004031832T patent/DE602004031832D1/en not_active Expired - Lifetime
-
2005
- 2005-10-20 KR KR1020057019949A patent/KR101073415B1/en not_active IP Right Cessation
- 2005-10-25 US US11/256,941 patent/US7842168B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109473A (en) * | 1994-10-14 | 1996-04-30 | Asahi Glass Co Ltd | Formation of silicon oxide film |
US20020117785A1 (en) * | 1999-10-13 | 2002-08-29 | Asahi Glass Company Limited | Sputtering target, process for its production and film forming method |
EP1176434A1 (en) * | 2000-07-27 | 2002-01-30 | Asahi Glass Company Ltd. | Substrate provide with antireflection films and its production method |
Non-Patent Citations (2)
Title |
---|
BRAEUER G ET AL: "Mid frequency sputtering-a novel tool for large area coating", SURFACE AND COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 94-95, no. 1-3, October 1997 (1997-10-01), pages 658 - 662, XP002299326, ISSN: 0257-8972 * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 08 30 August 1996 (1996-08-30) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE43817E1 (en) | 2004-07-12 | 2012-11-20 | Cardinal Cg Company | Low-maintenance coatings |
USRE44155E1 (en) | 2004-07-12 | 2013-04-16 | Cardinal Cg Company | Low-maintenance coatings |
US7862910B2 (en) | 2006-04-11 | 2011-01-04 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
US7820296B2 (en) | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coating technology |
US7820309B2 (en) | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coatings, and methods for producing low-maintenance coatings |
Also Published As
Publication number | Publication date |
---|---|
EP1627095B1 (en) | 2011-03-16 |
US20060032739A1 (en) | 2006-02-16 |
KR101073415B1 (en) | 2011-10-17 |
US7842168B2 (en) | 2010-11-30 |
EP1627095A2 (en) | 2006-02-22 |
WO2004097063A2 (en) | 2004-11-11 |
DE602004031832D1 (en) | 2011-04-28 |
JP4486838B2 (en) | 2010-06-23 |
KR20060003890A (en) | 2006-01-11 |
JP2005126813A (en) | 2005-05-19 |
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