WO2004107026A3 - Polarization modulation photoreflectance characterization of semiconductor quantum confined structures - Google Patents

Polarization modulation photoreflectance characterization of semiconductor quantum confined structures Download PDF

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Publication number
WO2004107026A3
WO2004107026A3 PCT/US2004/015622 US2004015622W WO2004107026A3 WO 2004107026 A3 WO2004107026 A3 WO 2004107026A3 US 2004015622 W US2004015622 W US 2004015622W WO 2004107026 A3 WO2004107026 A3 WO 2004107026A3
Authority
WO
WIPO (PCT)
Prior art keywords
characterization
semiconductor
structures
photoreflectance
semiconductor quantum
Prior art date
Application number
PCT/US2004/015622
Other languages
French (fr)
Other versions
WO2004107026A2 (en
Inventor
William W Ii Chism
Original Assignee
William W Ii Chism
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by William W Ii Chism filed Critical William W Ii Chism
Priority to EP04752613A priority Critical patent/EP1636555A4/en
Publication of WO2004107026A2 publication Critical patent/WO2004107026A2/en
Publication of WO2004107026A3 publication Critical patent/WO2004107026A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1725—Modulation of properties by light, e.g. photoreflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/396—Type of laser source
    • G01N2021/399—Diode laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/067—Electro-optic, magneto-optic, acousto-optic elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/069—Supply of sources
    • G01N2201/0691—Modulated (not pulsed supply)

Abstract

A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor quantum confined structures. By using a tunable laser source in conjunction with polarization state modulation, a single beam modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of quantum electronic confinement, including resolution of excitonic states at the band edge or other direct or indirect critical points in the band structure. This allows for characterization of semiconductor quantum well structures, for characterization of strain in semiconductor films, and for characterization of electric fields at semiconductor interfaces.
PCT/US2004/015622 2003-05-22 2004-05-19 Polarization modulation photoreflectance characterization of semiconductor quantum confined structures WO2004107026A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04752613A EP1636555A4 (en) 2003-05-22 2004-05-19 Polarization modulation photoreflectance characterization of semiconductor quantum confined structures

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US47268703P 2003-05-22 2003-05-22
US60/472,687 2003-05-22
US10/847,202 2004-05-17
US10/847,202 US6963402B2 (en) 2003-05-22 2004-05-17 Polarization modulation photoreflectance characterization of semiconductor quantum confined structures

Publications (2)

Publication Number Publication Date
WO2004107026A2 WO2004107026A2 (en) 2004-12-09
WO2004107026A3 true WO2004107026A3 (en) 2005-04-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/015622 WO2004107026A2 (en) 2003-05-22 2004-05-19 Polarization modulation photoreflectance characterization of semiconductor quantum confined structures

Country Status (3)

Country Link
US (1) US6963402B2 (en)
EP (1) EP1636555A4 (en)
WO (1) WO2004107026A2 (en)

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US7239392B2 (en) * 2003-05-22 2007-07-03 Xitronix Corporation Polarization modulation photoreflectance characterization of semiconductor electronic interfaces
US7450245B2 (en) * 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US7626712B2 (en) * 2005-07-12 2009-12-01 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7580138B2 (en) * 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7430051B2 (en) * 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
WO2007049260A1 (en) * 2005-10-24 2007-05-03 Optical Metrology Patents Limited An optical measurement apparatus and method
JP5006331B2 (en) * 2005-10-27 2012-08-22 ザイトロニクス・コーポレーション Method for characterization of light reflection of strain and active dopants in semiconductor structures
WO2009155441A2 (en) 2008-06-18 2009-12-23 Sterling Lc Transparent endoscope head defining a focal length
WO2010014792A2 (en) 2008-07-30 2010-02-04 Sterling Lc Method and device for incremental wavelength variation to analyze tissue
JP4538516B2 (en) * 2008-08-08 2010-09-08 防衛省技術研究本部長 Optical semiconductor device
WO2010053916A2 (en) 2008-11-04 2010-05-14 Sterling Lc Method and device for wavelength shifted imaging
US8717428B2 (en) * 2009-10-01 2014-05-06 Raytheon Company Light diffusion apparatus
WO2011041720A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Method and apparatus for manipulating movement of a micro-catheter
US8828028B2 (en) 2009-11-03 2014-09-09 Raytheon Company Suture device and method for closing a planar opening
GB201406002D0 (en) 2014-04-03 2014-05-21 Univ Lancaster Unique identifier
US10921369B2 (en) * 2017-01-05 2021-02-16 Xcalipr Corporation High precision optical characterization of carrier transport properties in semiconductors
US10656012B2 (en) * 2017-12-22 2020-05-19 Massachusetts Institute Of Technology Swept-source Raman spectroscopy systems and methods
US11798157B2 (en) * 2019-10-11 2023-10-24 The Regents Of The University Of Michigan Non-destructive imaging techniques for integrated circuits and other applications
CN114153084B (en) * 2021-12-01 2023-07-25 电子科技大学 Method for regulating optical properties of direct band gap semiconductor element with ultra-high time precision

Citations (5)

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Publication number Priority date Publication date Assignee Title
US4750822A (en) * 1986-03-28 1988-06-14 Therma-Wave, Inc. Method and apparatus for optically detecting surface states in materials
US5501637A (en) * 1993-08-10 1996-03-26 Texas Instruments Incorporated Temperature sensor and method
US5536936A (en) * 1994-01-12 1996-07-16 Centre National De La Recherche Spectroscopic ellipsometer modulated by an external excitation
US5757671A (en) * 1995-08-03 1998-05-26 Centre National De La Recherche Scientifique Multi-detector ellipsometer and process of multi-detector ellipsometric measurement
US6400449B2 (en) * 1996-01-23 2002-06-04 Brown University Research Foundation Optical stress generator and detector

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US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4931132A (en) * 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US6195166B1 (en) * 1998-05-08 2001-02-27 Lucent Technologies, Inc. Photoreflectance spectral analysis of semiconductor laser structures

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US4750822A (en) * 1986-03-28 1988-06-14 Therma-Wave, Inc. Method and apparatus for optically detecting surface states in materials
US5501637A (en) * 1993-08-10 1996-03-26 Texas Instruments Incorporated Temperature sensor and method
US5536936A (en) * 1994-01-12 1996-07-16 Centre National De La Recherche Spectroscopic ellipsometer modulated by an external excitation
US5757671A (en) * 1995-08-03 1998-05-26 Centre National De La Recherche Scientifique Multi-detector ellipsometer and process of multi-detector ellipsometric measurement
US6400449B2 (en) * 1996-01-23 2002-06-04 Brown University Research Foundation Optical stress generator and detector

Also Published As

Publication number Publication date
US6963402B2 (en) 2005-11-08
US20040257566A1 (en) 2004-12-23
WO2004107026A2 (en) 2004-12-09
EP1636555A4 (en) 2010-01-27
EP1636555A2 (en) 2006-03-22

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