WO2004114312A3 - Magnetic memory device on low-temperature substrate - Google Patents

Magnetic memory device on low-temperature substrate Download PDF

Info

Publication number
WO2004114312A3
WO2004114312A3 PCT/US2004/016271 US2004016271W WO2004114312A3 WO 2004114312 A3 WO2004114312 A3 WO 2004114312A3 US 2004016271 W US2004016271 W US 2004016271W WO 2004114312 A3 WO2004114312 A3 WO 2004114312A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
low
temperature substrate
magnetic memory
substrate
Prior art date
Application number
PCT/US2004/016271
Other languages
French (fr)
Other versions
WO2004114312A2 (en
Inventor
Gupta Arunava
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CN200480022966XA priority Critical patent/CN101263580B/en
Priority to JP2006533353A priority patent/JP2007503129A/en
Priority to EP04753147A priority patent/EP1631966A4/en
Publication of WO2004114312A2 publication Critical patent/WO2004114312A2/en
Publication of WO2004114312A3 publication Critical patent/WO2004114312A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
PCT/US2004/016271 2003-06-12 2004-05-24 Magnetic memory device on low-temperature substrate WO2004114312A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200480022966XA CN101263580B (en) 2003-06-12 2004-05-24 Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
JP2006533353A JP2007503129A (en) 2003-06-12 2004-05-24 Magnetic random access memory (MRAM) device implanted on a thermal substrate using laser transfer and method of manufacturing the same
EP04753147A EP1631966A4 (en) 2003-06-12 2004-05-24 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method for making the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/459,517 US7494896B2 (en) 2003-06-12 2003-06-12 Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US10/459,517 2003-06-12

Publications (2)

Publication Number Publication Date
WO2004114312A2 WO2004114312A2 (en) 2004-12-29
WO2004114312A3 true WO2004114312A3 (en) 2006-10-19

Family

ID=33510827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/016271 WO2004114312A2 (en) 2003-06-12 2004-05-24 Magnetic memory device on low-temperature substrate

Country Status (7)

Country Link
US (3) US7494896B2 (en)
EP (1) EP1631966A4 (en)
JP (1) JP2007503129A (en)
KR (1) KR100850190B1 (en)
CN (1) CN101263580B (en)
TW (1) TWI322992B (en)
WO (1) WO2004114312A2 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494896B2 (en) * 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US7799699B2 (en) * 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
KR101260981B1 (en) 2004-06-04 2013-05-10 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
JP2007080925A (en) * 2005-09-12 2007-03-29 Ricoh Co Ltd Magnetoresistive element, magnetic sensor, and memory
US7932123B2 (en) * 2006-09-20 2011-04-26 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
WO2010042653A1 (en) 2008-10-07 2010-04-15 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US7969774B2 (en) * 2009-03-10 2011-06-28 Micron Technology, Inc. Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices
TWI592996B (en) 2009-05-12 2017-07-21 美國伊利諾大學理事會 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US8986497B2 (en) 2009-12-07 2015-03-24 Ipg Photonics Corporation Laser lift off systems and methods
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
EP2974673B1 (en) 2010-03-17 2017-03-22 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
US9275888B2 (en) 2010-07-15 2016-03-01 Soitec Temporary substrate, transfer method and production method
FR2962848B1 (en) * 2010-07-15 2014-04-25 Soitec Silicon On Insulator TEMPORARY SUBSTRATE, TRANSFER METHOD, AND MANUFACTURING METHOD
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
EP2712491B1 (en) 2011-05-27 2019-12-04 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
JP6231489B2 (en) 2011-12-01 2017-11-15 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Transition devices designed to undergo programmable changes
WO2013149181A1 (en) 2012-03-30 2013-10-03 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US20160020011A2 (en) * 2012-09-28 2016-01-21 Seagate Technology Llc Methods of forming magnetic materials and articles formed thereby
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9048410B2 (en) 2013-05-31 2015-06-02 Micron Technology, Inc. Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
US9437756B2 (en) 2013-09-27 2016-09-06 Sunpower Corporation Metallization of solar cells using metal foils
US9378760B2 (en) * 2014-07-31 2016-06-28 Seagate Technology Llc Data reader with tuned microstructure
US10388858B2 (en) 2014-09-26 2019-08-20 Intel Corporation Fabrication of crystalline magnetic films for PSTTM applications
US11029198B2 (en) 2015-06-01 2021-06-08 The Board Of Trustees Of The University Of Illinois Alternative approach for UV sensing
AU2016270807A1 (en) 2015-06-01 2017-12-14 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
JP7161483B2 (en) * 2017-09-27 2022-10-26 日本碍子株式会社 BASE SUBSTRATE, FUNCTIONAL ELEMENT AND METHOD FOR MANUFACTURING BASE SUBSTRATE

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6210479B1 (en) * 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6521511B1 (en) * 1997-07-03 2003-02-18 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US6972204B2 (en) * 2001-09-06 2005-12-06 Sony Corporation Method of transferring devices, method of arranging devices using the same, and method of manufacturing an image display system

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017265A (en) * 1972-02-15 1977-04-12 Taylor David W Ferromagnetic memory layer, methods of making and adhering it to substrates, magnetic tapes, and other products
DE69739368D1 (en) * 1996-08-27 2009-05-28 Seiko Epson Corp Separation method and method for transferring a thin film device
KR100303934B1 (en) * 1997-03-25 2001-09-29 포만 제프리 엘 Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP4085459B2 (en) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
US6312304B1 (en) * 1998-12-15 2001-11-06 E Ink Corporation Assembly of microencapsulated electronic displays
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP3682208B2 (en) * 2000-06-30 2005-08-10 株式会社東芝 Spin valve transistor
US6992869B2 (en) * 2001-02-06 2006-01-31 Yamaha Corporation Magnetic resistance device
US6723165B2 (en) * 2001-04-13 2004-04-20 Matsushita Electric Industrial Co., Ltd. Method for fabricating Group III nitride semiconductor substrate
JP2003086774A (en) * 2001-09-07 2003-03-20 Canon Inc Magnetic memory device and its manufacturing method
JP2003123047A (en) * 2001-10-15 2003-04-25 Sharp Corp Semiconductor device and manufacturing method therefor
CN1176483C (en) * 2002-05-31 2004-11-17 南京大学 Process for preparing self-supporting gallium nitride substrate by laser stripping method
US6946178B2 (en) * 2003-05-23 2005-09-20 James Sheats Lamination and delamination technique for thin film processing
US7494896B2 (en) * 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
CN1231065C (en) * 2003-11-14 2005-12-07 西安交通大学 A method for implementing web teleeducation system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521511B1 (en) * 1997-07-03 2003-02-18 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US6210479B1 (en) * 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6972204B2 (en) * 2001-09-06 2005-12-06 Sony Corporation Method of transferring devices, method of arranging devices using the same, and method of manufacturing an image display system

Also Published As

Publication number Publication date
US7888757B2 (en) 2011-02-15
US7674686B2 (en) 2010-03-09
EP1631966A4 (en) 2010-09-08
CN101263580A (en) 2008-09-10
KR20060004982A (en) 2006-01-16
JP2007503129A (en) 2007-02-15
CN101263580B (en) 2011-08-24
TWI322992B (en) 2010-04-01
US7494896B2 (en) 2009-02-24
KR100850190B1 (en) 2008-08-05
US20080044930A1 (en) 2008-02-21
WO2004114312A2 (en) 2004-12-29
TW200511310A (en) 2005-03-16
US20040252559A1 (en) 2004-12-16
US20080055790A1 (en) 2008-03-06
EP1631966A2 (en) 2006-03-08

Similar Documents

Publication Publication Date Title
WO2004114312A3 (en) Magnetic memory device on low-temperature substrate
WO2006071913A3 (en) Electroluminescent devices including an optical spacer and methods of making same
TW200725782A (en) Transfer substrate, transfer method, and method of manufacturing display device
WO2003066121A8 (en) Medical devices comprising a multilayer construction
EP1321988A3 (en) Method for transferring of organic material from a donor to form a layer in an oled device
WO2007022226A3 (en) Nanowires-based transparent conductors
WO2006036366A3 (en) Method of forming a solution processed device
WO2005033786A3 (en) Device and method of making a device having a meandering layer on a flexible substrate
WO2004047197A3 (en) Structure and method of fabricating organic devices
TWI264121B (en) A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
AU2003235902A1 (en) Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
AU2001232298A1 (en) Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
EP1564802A3 (en) Thin film semiconductor device and method for fabricating the same
TWI263465B (en) Pattern formation method and pattern formation apparatus, method for manufacturing device, electro-optical device, electronic device, and method for manufacturing active matrix substrate
AU2003285111A1 (en) Electrophoretic or electromagnetophoretic display device with several layers of display cells, and manufacturing method
EP1363319A3 (en) Method of transferring a laminate and method of manufacturing a semiconductor device
EP1391946A3 (en) Apparatus for permitting transfer of organic material from a donor web to form a layer in an oled device
TW200733780A (en) Light-emitting device and electronic apparatus
EP1947702A3 (en) Nanowired-based transparent conductors
WO2005116757A3 (en) Coatings containing nanotubes, methods of applying the same and transparencies incorporating the same
EP1583148A4 (en) Semiconductor device and its fabricating method
WO2004036676A3 (en) Fuel storage devices and apparatus including the same
WO2006094241A3 (en) Thin-film device comprising an oxide semiconductor and method of selective annealing a blanket coated oxide semiconductor layer
AU4274601A (en) Semiconductor layer, solar cell using it, and production methods and applications therefor
WO2006055144A3 (en) Gas diffusion medium with microporous bilayer

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200480022966.X

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020057021400

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2006533353

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2004753147

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 159/CHENP/2006

Country of ref document: IN

WWP Wipo information: published in national office

Ref document number: 1020057021400

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004753147

Country of ref document: EP