WO2005001490A3 - Thermally operated switch control memory cell - Google Patents

Thermally operated switch control memory cell Download PDF

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Publication number
WO2005001490A3
WO2005001490A3 PCT/US2004/020327 US2004020327W WO2005001490A3 WO 2005001490 A3 WO2005001490 A3 WO 2005001490A3 US 2004020327 W US2004020327 W US 2004020327W WO 2005001490 A3 WO2005001490 A3 WO 2005001490A3
Authority
WO
WIPO (PCT)
Prior art keywords
bit
structures
interconnection structure
intermediate layer
critical temperature
Prior art date
Application number
PCT/US2004/020327
Other languages
French (fr)
Other versions
WO2005001490A2 (en
WO2005001490A9 (en
Inventor
James M Daughton
Arthur V Pohm
Original Assignee
Nve Corp
James M Daughton
Arthur V Pohm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nve Corp, James M Daughton, Arthur V Pohm filed Critical Nve Corp
Priority to EP04777041.7A priority Critical patent/EP1639656B1/en
Publication of WO2005001490A2 publication Critical patent/WO2005001490A2/en
Publication of WO2005001490A9 publication Critical patent/WO2005001490A9/en
Publication of WO2005001490A3 publication Critical patent/WO2005001490A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Abstract

A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
PCT/US2004/020327 2003-06-23 2004-06-23 Thermally operated switch control memory cell WO2005001490A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04777041.7A EP1639656B1 (en) 2003-06-23 2004-06-23 Thermally operated ferromagnetic memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48337103P 2003-06-23 2003-06-23
US60/483,371 2003-06-23

Publications (3)

Publication Number Publication Date
WO2005001490A2 WO2005001490A2 (en) 2005-01-06
WO2005001490A9 WO2005001490A9 (en) 2005-03-17
WO2005001490A3 true WO2005001490A3 (en) 2005-05-12

Family

ID=33552057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/020327 WO2005001490A2 (en) 2003-06-23 2004-06-23 Thermally operated switch control memory cell

Country Status (3)

Country Link
US (1) US6963098B2 (en)
EP (1) EP1639656B1 (en)
WO (1) WO2005001490A2 (en)

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US7701756B2 (en) 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
TWI449040B (en) 2006-10-06 2014-08-11 Crocus Technology Sa System and method for providing content-addressable magnetoresistive random access memory cells
US8659664B2 (en) * 2007-03-23 2014-02-25 Flir Systems, Inc. Thermography camera configured for leak detection
US7688616B2 (en) * 2007-06-18 2010-03-30 Taiwan Semicondcutor Manufacturing Company, Ltd. Device and method of programming a magnetic memory element
ATE538474T1 (en) 2008-04-07 2012-01-15 Crocus Technology Sa SYSTEM AND METHOD FOR WRITING DATA TO MAGNETORRESISTIVE RANDOM ACCESS MEMORY CELLS
EP2124228B1 (en) 2008-05-20 2014-03-05 Crocus Technology Magnetic random access memory with an elliptical junction
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US7804709B2 (en) * 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8223532B2 (en) 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8487390B2 (en) 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US8217478B2 (en) 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
JP2010114143A (en) * 2008-11-04 2010-05-20 Toshiba Corp Semiconductor memory device, and method of manufacturing the same
US8519495B2 (en) * 2009-02-17 2013-08-27 Seagate Technology Llc Single line MRAM
US8053255B2 (en) 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
US7994597B2 (en) * 2009-03-13 2011-08-09 Magic Technologies, Inc. MRAM with coupling valve switching
US7916528B2 (en) 2009-03-30 2011-03-29 Seagate Technology Llc Predictive thermal preconditioning and timing control for non-volatile memory cells
US8064246B2 (en) 2009-12-10 2011-11-22 John Casimir Slonczewski Creating spin-transfer torque in oscillators and memories
JP5483281B2 (en) * 2010-03-31 2014-05-07 ルネサスエレクトロニクス株式会社 Semiconductor device and semiconductor device assembly
US8780576B2 (en) 2011-09-14 2014-07-15 Invensas Corporation Low CTE interposer
EP2608208B1 (en) * 2011-12-22 2015-02-11 Crocus Technology S.A. Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
US9317083B2 (en) * 2013-02-22 2016-04-19 Skyera, Llc Thermal regulation for solid state memory
US9524765B2 (en) 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
US20170263678A1 (en) * 2016-03-11 2017-09-14 Kabushiki Kaisha Toshiba Magnetic memory device
US10510390B2 (en) * 2017-06-07 2019-12-17 International Business Machines Corporation Magnetic exchange coupled MTJ free layer having low switching current and high data retention
US10332576B2 (en) * 2017-06-07 2019-06-25 International Business Machines Corporation Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
JP7091783B2 (en) * 2018-03-30 2022-06-28 Tdk株式会社 Magnetoresistive device
US10354681B1 (en) 2018-06-28 2019-07-16 Sandisk Technologies Llc Tunnel magnetoresistance read head including side shields containing nanocrystalline ferromagnetic particles
TWI713195B (en) * 2018-09-24 2020-12-11 美商森恩萊斯記憶體公司 Wafer bonding in fabrication of 3-dimensional nor memory circuits and integrated circuit formed therefrom
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Also Published As

Publication number Publication date
US6963098B2 (en) 2005-11-08
WO2005001490A2 (en) 2005-01-06
EP1639656A2 (en) 2006-03-29
WO2005001490A9 (en) 2005-03-17
EP1639656A4 (en) 2010-03-17
EP1639656B1 (en) 2019-06-12
US20050002267A1 (en) 2005-01-06

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