WO2005001899A3 - Non-volatile electromechanical field effect devices and circuits using same and methods of forming same - Google Patents

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Download PDF

Info

Publication number
WO2005001899A3
WO2005001899A3 PCT/US2004/018349 US2004018349W WO2005001899A3 WO 2005001899 A3 WO2005001899 A3 WO 2005001899A3 US 2004018349 W US2004018349 W US 2004018349W WO 2005001899 A3 WO2005001899 A3 WO 2005001899A3
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
same
region
circuits
terminal
Prior art date
Application number
PCT/US2004/018349
Other languages
French (fr)
Other versions
WO2005001899A2 (en
Inventor
Claude L Bertin
Thomas Rueckes
Brent M Segal
Bernhard Vogeli
Darren K Brock
Venkatachalam C Jaiprakash
Original Assignee
Nantero Inc
Claude L Bertin
Thomas Rueckes
Brent M Segal
Bernhard Vogeli
Darren K Brock
Venkatachalam C Jaiprakash
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Claude L Bertin, Thomas Rueckes, Brent M Segal, Bernhard Vogeli, Darren K Brock, Venkatachalam C Jaiprakash filed Critical Nantero Inc
Priority to EP04754836A priority Critical patent/EP1634296A4/en
Priority to CA002528804A priority patent/CA2528804A1/en
Publication of WO2005001899A2 publication Critical patent/WO2005001899A2/en
Publication of WO2005001899A3 publication Critical patent/WO2005001899A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Abstract

Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.
PCT/US2004/018349 2003-06-09 2004-06-09 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same WO2005001899A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04754836A EP1634296A4 (en) 2003-06-09 2004-06-09 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
CA002528804A CA2528804A1 (en) 2003-06-09 2004-06-09 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47697603P 2003-06-09 2003-06-09
US60/476,976 2003-06-09

Publications (2)

Publication Number Publication Date
WO2005001899A2 WO2005001899A2 (en) 2005-01-06
WO2005001899A3 true WO2005001899A3 (en) 2005-06-09

Family

ID=33551655

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/018349 WO2005001899A2 (en) 2003-06-09 2004-06-09 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Country Status (5)

Country Link
US (15) US6982903B2 (en)
EP (1) EP1634296A4 (en)
CA (1) CA2528804A1 (en)
TW (1) TW200518337A (en)
WO (1) WO2005001899A2 (en)

Families Citing this family (214)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP4189549B2 (en) * 2002-11-29 2008-12-03 独立行政法人科学技術振興機構 Information storage element, manufacturing method thereof, and memory array
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
US7666382B2 (en) 2004-12-16 2010-02-23 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US8937575B2 (en) * 2009-07-31 2015-01-20 Nantero Inc. Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
WO2004088719A2 (en) * 2003-03-28 2004-10-14 Nantero, Inc. Nanotube-on-gate fet structures and applications
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US7780918B2 (en) * 2003-05-14 2010-08-24 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US6982903B2 (en) * 2003-06-09 2006-01-03 Nantero, Inc. Field effect devices having a source controlled via a nanotube switching element
JP3731589B2 (en) * 2003-07-18 2006-01-05 ソニー株式会社 Imaging device and synchronization signal generator
KR100615586B1 (en) * 2003-07-23 2006-08-25 삼성전자주식회사 Phase change memory device including localized phase transition area in porous dielectric layer and method of forming the same
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
CN101562049B (en) * 2003-08-13 2012-09-05 南泰若股份有限公司 Nanotube-based switching elements with multiple controls and circuits made thereof
JP2007502545A (en) * 2003-08-13 2007-02-08 ナンテロ，インク． Nanotube-based exchange element with a plurality of control devices and circuit produced from said element
US7583526B2 (en) 2003-08-13 2009-09-01 Nantero, Inc. Random access memory including nanotube switching elements
US7245520B2 (en) * 2004-08-13 2007-07-17 Nantero, Inc. Random access memory including nanotube switching elements
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7504051B2 (en) * 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7169661B2 (en) * 2004-04-12 2007-01-30 System General Corp. Process of fabricating high resistance CMOS resistor
US7352608B2 (en) * 2004-05-24 2008-04-01 Trustees Of Boston University Controllable nanomechanical memory element
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7109546B2 (en) * 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7247877B2 (en) * 2004-08-20 2007-07-24 International Business Machines Corporation Integrated carbon nanotube sensors
US8471238B2 (en) * 2004-09-16 2013-06-25 Nantero Inc. Light emitters using nanotubes and methods of making same
US20070246784A1 (en) * 2004-10-13 2007-10-25 Samsung Electronics Co., Ltd. Unipolar nanotube transistor using a carrier-trapping material
US7911822B2 (en) * 2004-10-21 2011-03-22 Nxp B.V. Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7646630B2 (en) * 2004-11-08 2010-01-12 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US20060141678A1 (en) * 2004-12-29 2006-06-29 Stephen Montgomery Forming a nanotube switch and structures formed thereby
WO2006074477A2 (en) * 2005-01-10 2006-07-13 Ixys Corporation Integrated packaged device having magnetic components
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7535016B2 (en) * 2005-01-31 2009-05-19 International Business Machines Corporation Vertical carbon nanotube transistor integration
US7824946B1 (en) 2005-03-11 2010-11-02 Nantero, Inc. Isolated metal plug process for use in fabricating carbon nanotube memory cells
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8941094B2 (en) * 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US8000127B2 (en) * 2009-08-12 2011-08-16 Nantero, Inc. Method for resetting a resistive change memory element
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
CN101484997B (en) * 2005-05-09 2011-05-18 南泰若股份有限公司 Memory arrays using nanotube articles with reprogrammable resistance
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US8008745B2 (en) * 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8102018B2 (en) * 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) * 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7402770B2 (en) * 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US20060292716A1 (en) * 2005-06-27 2006-12-28 Lsi Logic Corporation Use selective growth metallization to improve electrical connection between carbon nanotubes and electrodes
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7495952B2 (en) * 2005-07-13 2009-02-24 Cornell Research Foundation, Inc. Relay-connected semiconductor transistors
US7687841B2 (en) * 2005-08-02 2010-03-30 Micron Technology, Inc. Scalable high performance carbon nanotube field effect transistor
CA2621924A1 (en) 2005-09-06 2007-03-06 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
AU2006287610A1 (en) * 2005-09-06 2007-03-15 Nantero, Inc. Nanotube fabric-based sensor systems and methods of making same
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
US8553455B2 (en) * 2005-09-27 2013-10-08 Cornell Research Foundation, Inc. Shape memory device
JP4919146B2 (en) * 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 Switching element
TWI287854B (en) * 2005-09-30 2007-10-01 Ind Tech Res Inst Semiconductor device with transistors and fabricating method thereof
US7629192B2 (en) * 2005-10-13 2009-12-08 International Business Machines Corporation Passive electrically testable acceleration and voltage measurement devices
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
US7492015B2 (en) * 2005-11-10 2009-02-17 International Business Machines Corporation Complementary carbon nanotube triple gate technology
US7885103B2 (en) 2005-11-22 2011-02-08 Agate Logic, Inc. Non-volatile electromechanical configuration bit array
US7385839B2 (en) * 2005-12-01 2008-06-10 International Business Machines Corporation Memory devices using carbon nanotube (CNT) technologies
GB0525025D0 (en) * 2005-12-08 2006-01-18 Cavendish Kinetics Ltd memory Cell and Array
US7324363B2 (en) * 2005-12-12 2008-01-29 Synopsys, Inc. SPICE optimized for arrays
US7492046B2 (en) * 2006-04-21 2009-02-17 International Business Machines Corporation Electric fuses using CNTs (carbon nanotubes)
TW200804613A (en) * 2006-04-28 2008-01-16 Univ California Synthesis of pure nanotubes from nanotubes
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US7781267B2 (en) * 2006-05-19 2010-08-24 International Business Machines Corporation Enclosed nanotube structure and method for forming
US7515465B1 (en) * 2006-06-07 2009-04-07 Flashsilicon Incorporation Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM)
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US20080025069A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array with different data states
EP2104109A1 (en) 2006-08-08 2009-09-23 Nantero, Inc. Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
KR100803690B1 (en) * 2006-08-10 2008-02-20 삼성전자주식회사 Electro-mechanical non-volatile memory device and method for manufacturing the same
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
GB0618045D0 (en) * 2006-09-13 2006-10-25 Cavendish Kinetics Ltd Non-volatile memory bitcell
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
US7551470B2 (en) * 2006-10-19 2009-06-23 International Business Machines Corporation Non volatile memory RAD-hard (NVM-rh) system
TWI355635B (en) * 2006-11-09 2012-01-01 Au Optronics Corp Gate driving circuit of liquid crystal display
US20080277718A1 (en) * 2006-11-30 2008-11-13 Mihai Adrian Ionescu 1T MEMS scalable memory cell
US8004043B2 (en) * 2006-12-19 2011-08-23 Intel Corporation Logic circuits using carbon nanotube transistors
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US20080192014A1 (en) * 2007-02-08 2008-08-14 Tyco Electronics Corporation Touch screen using carbon nanotube electrodes
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
WO2008112764A1 (en) 2007-03-12 2008-09-18 Nantero, Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
WO2008128164A1 (en) * 2007-04-12 2008-10-23 The Penn State Research Foundation Accumulation field effect microelectronic device and process for the formation thereof
US9209246B2 (en) 2007-04-12 2015-12-08 The Penn State University Accumulation field effect microelectronic device and process for the formation thereof
US20080284463A1 (en) * 2007-05-17 2008-11-20 Texas Instruments Incorporated programmable circuit having a carbon nanotube
KR100857085B1 (en) * 2007-05-18 2008-09-05 한국과학기술원 Method for operating memory array using mechanical switch
WO2009005908A2 (en) * 2007-05-22 2009-01-08 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8134220B2 (en) * 2007-06-22 2012-03-13 Nantero Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US7725858B2 (en) * 2007-06-27 2010-05-25 Intel Corporation Providing a moat capacitance
US7701013B2 (en) * 2007-07-10 2010-04-20 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US7550354B2 (en) * 2007-07-11 2009-06-23 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US20090016118A1 (en) * 2007-07-12 2009-01-15 Silicon Storage Technology, Inc. Non-volatile dram with floating gate and method of operation
TWI374534B (en) * 2008-01-16 2012-10-11 Novatek Microelectronics Corp Method and integrated circuits capable of saving layout areas
JP4544340B2 (en) * 2008-01-24 2010-09-15 ソニー株式会社 ELECTRONIC DEVICE, ITS MANUFACTURING METHOD, AND STORAGE DEVICE
US9019756B2 (en) * 2008-02-14 2015-04-28 Cavendish Kinetics, Ltd Architecture for device having cantilever electrode
US7612270B1 (en) * 2008-04-09 2009-11-03 International Business Machines Corporation Nanoelectromechanical digital inverter
US20090273962A1 (en) * 2008-04-30 2009-11-05 Cavendish Kinetics Inc. Four-terminal multiple-time programmable memory bitcell and array architecture
US8405936B2 (en) * 2008-05-02 2013-03-26 Agilent Technologies, Inc. Power diverter having a MEMS switch and a MEMS protection switch
US20090303801A1 (en) * 2008-06-10 2009-12-10 Juhan Kim Carbon nanotube memory including a buffered data path
US8587989B2 (en) * 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US7903444B2 (en) * 2008-06-26 2011-03-08 Chrong-Jung Lin One-time programmable memory and operating method thereof
US8222127B2 (en) * 2008-07-18 2012-07-17 Micron Technology, Inc. Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8541843B2 (en) * 2008-08-14 2013-09-24 Nantero Inc. Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
US7675768B1 (en) 2008-08-22 2010-03-09 Fronteon Inc Low power carbon nanotube memory
US7715228B2 (en) * 2008-08-25 2010-05-11 Nve Corporation Cross-point magnetoresistive memory
US7897954B2 (en) * 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US7884433B2 (en) * 2008-10-31 2011-02-08 Magic Technologies, Inc. High density spin-transfer torque MRAM process
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US7933160B2 (en) * 2008-12-13 2011-04-26 Juhan Kim High speed carbon nanotube memory
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US9128669B2 (en) * 2009-03-27 2015-09-08 Qualcomm Incorporated System and method of managing security between a portable computing device and a portable computing device docking station
US9201593B2 (en) 2009-03-27 2015-12-01 Qualcomm Incorporated System and method of managing displays at a portable computing device and a portable computing device docking station
US8653785B2 (en) 2009-03-27 2014-02-18 Qualcomm Incorporated System and method of managing power at a portable computing device and a portable computing device docking station
US20100250818A1 (en) * 2009-03-27 2010-09-30 Qualcomm Incorporated System and method of providing wireless connectivity between a portable computing device and a portable computing device docking station
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
US8574673B2 (en) * 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
KR101016437B1 (en) * 2009-08-21 2011-02-21 한국과학기술연구원 Reconfigurable logic device using spin accumulation and diffusion
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US20110056812A1 (en) * 2009-09-08 2011-03-10 Kaul Anupama B Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same
US8351239B2 (en) * 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8345475B2 (en) * 2009-11-17 2013-01-01 International Business Machines Corporation Non volatile cell and architecture with single bit random access read, program and erase
JP5640379B2 (en) 2009-12-28 2014-12-17 ソニー株式会社 Manufacturing method of semiconductor device
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8435798B2 (en) * 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8405189B1 (en) 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
US9362390B2 (en) 2010-02-22 2016-06-07 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
EP2363870A1 (en) * 2010-03-04 2011-09-07 Thomson Licensing Electromechanical switch, storage device comprising such an electromechanical switch and method for operating the same
EP2363958A1 (en) * 2010-03-04 2011-09-07 Thomson Licensing Field programmable gate array
US10923204B2 (en) * 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US8125824B1 (en) 2010-09-02 2012-02-28 Lockheed Martin Corporation Nanotube random access memory (NRAM) and transistor integration
US8703523B1 (en) 2010-12-06 2014-04-22 Lawrence Livermore National Security, Llc. Nanoporous carbon tunable resistor/transistor and methods of production thereof
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
JP2012174863A (en) * 2011-02-21 2012-09-10 Sony Corp Semiconductor device and operation method of the same
JP2012174864A (en) * 2011-02-21 2012-09-10 Sony Corp Semiconductor device and operation method of the same
EP2557567A1 (en) 2011-08-09 2013-02-13 Thomson Licensing Programmable read-only memory device and method of writing the same
US20130075685A1 (en) * 2011-09-22 2013-03-28 Yubao Li Methods and apparatus for including an air gap in carbon-based memory devices
US8611137B2 (en) 2011-11-23 2013-12-17 Altera Corporation Memory elements with relay devices
US8605497B2 (en) 2011-12-22 2013-12-10 International Business Machines Corporation Parallel programming scheme in multi-bit phase change memory
US8614911B2 (en) * 2011-12-22 2013-12-24 International Business Machines Corporation Energy-efficient row driver for programming phase change memory
US8711603B2 (en) * 2012-05-11 2014-04-29 Micron Technology, Inc. Permutational memory cells
US9165633B2 (en) 2013-02-26 2015-10-20 Honeywell International Inc. Carbon nanotube memory cell with enhanced current control
US9431392B2 (en) * 2013-03-15 2016-08-30 Infineon Technologies Austria Ag Electronic circuit having adjustable transistor device
US8753953B1 (en) 2013-03-15 2014-06-17 International Business Machines Corporation Self aligned capacitor fabrication
US9842991B2 (en) 2013-03-15 2017-12-12 Honeywell International Inc. Memory cell with redundant carbon nanotube
US9007732B2 (en) 2013-03-15 2015-04-14 Nantero Inc. Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same
GB201306194D0 (en) * 2013-04-05 2013-05-22 Univ Nottingham Diagnosis of incipient faults in a PMSM motor with coaxially insulated windings
CN104112777B (en) * 2013-04-16 2017-12-19 清华大学 Thin film transistor (TFT) and preparation method thereof
US9563371B2 (en) 2013-07-26 2017-02-07 Globalfoundreis Inc. Self-adjusting phase change memory storage module
WO2015068256A1 (en) * 2013-11-08 2015-05-14 堺ディスプレイプロダクト株式会社 Display device
EP2887354B1 (en) * 2013-12-20 2019-08-07 IMEC vzw Nano-electro-mechanical based memory
TWI555177B (en) * 2014-01-15 2016-10-21 林崇榮 One time programming memory and associated memory cell structure
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9911727B2 (en) 2015-03-16 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strapping structure of memory circuit
WO2016173619A1 (en) 2015-04-27 2016-11-03 Advantest Corporation Switch circuit, method for operating a switch circuit and an automated test equipment
US9947400B2 (en) 2016-04-22 2018-04-17 Nantero, Inc. Methods for enhanced state retention within a resistive change cell
US20170317141A1 (en) * 2016-04-28 2017-11-02 HGST Netherlands B.V. Nonvolatile schottky barrier memory transistor
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US9941001B2 (en) * 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US10665798B2 (en) * 2016-07-14 2020-05-26 International Business Machines Corporation Carbon nanotube transistor and logic with end-bonded metal contacts
US10665799B2 (en) 2016-07-14 2020-05-26 International Business Machines Corporation N-type end-bonded metal contacts for carbon nanotube transistors
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements
US10096362B1 (en) * 2017-03-24 2018-10-09 Crossbar, Inc. Switching block configuration bit comprising a non-volatile memory cell
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
WO2019066854A1 (en) * 2017-09-28 2019-04-04 Intel Corporation Dynamic random access memory including threshold switch
US20190198095A1 (en) * 2017-12-25 2019-06-27 Nanya Technology Corporation Memory device
JP2020149746A (en) * 2019-03-14 2020-09-17 キオクシア株式会社 Semiconductor storage device
US10833284B1 (en) 2019-06-04 2020-11-10 Carbonics Inc. Electrical devices having radiofrequency field effect transistors and the manufacture thereof
US11295810B2 (en) 2019-06-07 2022-04-05 Nantero, Inc. Combinational resistive change elements
US11165032B2 (en) * 2019-09-05 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor using carbon nanotubes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044343A (en) * 1975-05-02 1977-08-23 Tokyo Shibaura Electric Co., Ltd. Non-volatile random access memory system
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6548841B2 (en) * 2000-11-09 2003-04-15 Texas Instruments Incorporated Nanomechanical switches and circuits

Family Cites Families (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US62035A (en) * 1867-02-12 Bobbbt y
US171630A (en) * 1875-12-28 Improvement in windmills
US175856A (en) * 1876-04-11 Improvement in springs for children s carriages
US41466A (en) * 1864-02-02 Improvement in circular looms for weaving hats
US47244A (en) * 1865-04-11 Improvement in harness-saddles
US130353A (en) * 1872-08-13 Improvement in galvanic batteries
US56877A (en) * 1866-08-07 Improved crushing, rolling, and kneading machine
US41465A (en) * 1864-02-02 Improvement in ladies head-nets
US3303201A (en) 1964-02-24 1967-02-07 Herbert C Stecker Halogenated anilides of thiophene carboxylic acids
US3332301A (en) 1964-11-24 1967-07-25 Origineers Inc Gear drive
US3448302A (en) * 1966-06-16 1969-06-03 Itt Operating circuit for phase change memory devices
JPS6025837B2 (en) * 1978-09-14 1985-06-20 株式会社東芝 semiconductor storage device
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
CH670914A5 (en) * 1986-09-10 1989-07-14 Landis & Gyr Ag
US4876667A (en) 1987-06-22 1989-10-24 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US5198994A (en) * 1988-08-31 1993-03-30 Kabushiki Kaisha Toshiba Ferroelectric memory device
JP2930168B2 (en) 1992-10-09 1999-08-03 シャープ株式会社 Driving method of ferroelectric memory device
US5367136A (en) * 1993-07-26 1994-11-22 Westinghouse Electric Corp. Non-contact two position microeletronic cantilever switch
JP3151123B2 (en) * 1995-04-24 2001-04-03 シャープ株式会社 Nonvolatile semiconductor memory device
US5682345A (en) 1995-07-28 1997-10-28 Micron Quantum Devices, Inc. Non-volatile data storage unit method of controlling same
US5714039A (en) 1995-10-04 1998-02-03 International Business Machines Corporation Method for making sub-lithographic images by etching the intersection of two spacers
US5818748A (en) 1995-11-21 1998-10-06 International Business Machines Corporation Chip function separation onto separate stacked chips
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US6809462B2 (en) * 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
GB2325525B (en) * 1997-03-20 2001-08-22 Carl Denby Testing storage tanks
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
KR100276569B1 (en) * 1997-06-20 2000-12-15 김영환 Ferroelectric memory device
US6011744A (en) 1997-07-16 2000-01-04 Altera Corporation Programmable logic device with multi-port memory
FR2778263B1 (en) * 1998-04-30 2000-11-17 Jean Chretien Favreau FLEXIBLE SUPPORT FOR ELECTRONIC INPUT AND DISPLAY OF DIGITAL DATA ON THE SAME SURFACE
ATA119098A (en) 1998-07-09 1999-05-15 Ims Ionen Mikrofab Syst METHOD FOR PRODUCING A CARBON FILM ON A SUBSTRATE
US6097243A (en) 1998-07-21 2000-08-01 International Business Machines Corporation Device and method to reduce power consumption in integrated semiconductor devices using a low power groggy mode
US6097241A (en) 1998-07-21 2000-08-01 International Business Machines Corporation ASIC low power activity detector to change threshold voltage
US6346189B1 (en) 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
US6587408B1 (en) * 1998-10-01 2003-07-01 Massachusetts Institute Of Technology High-density mechanical memory and turing machine
US6048740A (en) * 1998-11-05 2000-04-11 Sharp Laboratories Of America, Inc. Ferroelectric nonvolatile transistor and method of making same
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
WO2000044094A1 (en) 1999-01-21 2000-07-27 University Of South Carolina Molecular computer
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
JP4313874B2 (en) * 1999-02-02 2009-08-12 キヤノン株式会社 Substrate manufacturing method
JP4658329B2 (en) 1999-02-12 2011-03-23 ボード オブ トラスティーズ，オブ ミシガン ステイト ユニバーシティ Nanocapsules containing charged particles, methods of use and formation thereof
US6160230A (en) * 1999-03-01 2000-12-12 Raytheon Company Method and apparatus for an improved single pole double throw micro-electrical mechanical switch
US6280697B1 (en) 1999-03-01 2001-08-28 The University Of North Carolina-Chapel Hill Nanotube-based high energy material and method
US6518156B1 (en) * 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US7030408B1 (en) * 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6369671B1 (en) 1999-03-30 2002-04-09 International Business Machines Corporation Voltage controlled transmission line with real-time adaptive control
US6345362B1 (en) 1999-04-06 2002-02-05 International Business Machines Corporation Managing Vt for reduced power using a status table
AUPP976499A0 (en) 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
US6396368B1 (en) * 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
US6346846B1 (en) 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
JP3572329B2 (en) 1999-12-22 2004-09-29 エルピーダメモリ株式会社 A data latch circuit and an operation method of the data latch circuit.
US6625740B1 (en) 2000-01-13 2003-09-23 Cirrus Logic, Inc. Dynamically activating and deactivating selected circuit blocks of a data processing integrated circuit during execution of instructions according to power code bits appended to selected instructions
US6256757B1 (en) * 2000-01-24 2001-07-03 Credence Systems Corporation Apparatus for testing memories with redundant storage elements
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US6443901B1 (en) * 2000-06-15 2002-09-03 Koninklijke Philips Electronics N.V. Capacitive micromachined ultrasonic transducers
EP1170799A3 (en) * 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
DE10134866B4 (en) 2000-07-18 2005-08-11 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the process grown carbon nanotubes
US6462977B2 (en) * 2000-08-17 2002-10-08 David Earl Butz Data storage device having virtual columns and addressing layers
US6504118B2 (en) 2000-10-27 2003-01-07 Daniel J Hyman Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism
JP3587248B2 (en) 2000-12-20 2004-11-10 日本電気株式会社 Scan flip-flops
US7024209B1 (en) * 2000-12-20 2006-04-04 Cisco Technology, Inc. Unified messaging system configured for management of short message service-type messages
US6625047B2 (en) 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6373771B1 (en) * 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
WO2002080360A1 (en) * 2001-03-30 2002-10-10 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6611033B2 (en) * 2001-04-12 2003-08-26 Ibm Corporation Micromachined electromechanical (MEM) random access memory array and method of making same
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US6525453B2 (en) * 2001-05-02 2003-02-25 Huang Chung Cheng Field emitting display
JP4207398B2 (en) 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
US6426687B1 (en) 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US6680837B1 (en) * 2001-06-14 2004-01-20 Analog Devices, Inc. Hiccup-mode short circuit protection circuit and method for linear voltage regulators
JP2003017074A (en) 2001-07-02 2003-01-17 Honda Motor Co Ltd Fuel cell
JP2003017508A (en) 2001-07-05 2003-01-17 Nec Corp Field effect transistor
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
WO2003012908A2 (en) * 2001-07-27 2003-02-13 Massachusetts Institute Of Technology Battery structures, self-organizing structures and related methods
US6891319B2 (en) * 2001-08-29 2005-05-10 Motorola, Inc. Field emission display and methods of forming a field emission display
US6835613B2 (en) 2001-12-06 2004-12-28 University Of South Florida Method of producing an integrated circuit with a carbon nanotube
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US6894359B2 (en) 2002-09-04 2005-05-17 Nanomix, Inc. Sensitivity control for nanotube sensors
WO2003063208A2 (en) 2002-01-18 2003-07-31 California Institute Of Technology Array-based architecture for molecular electronics
DE60301582T2 (en) 2002-02-09 2006-06-22 Samsung Electronics Co., Ltd., Suwon Carbon nanotube storage device and method of manufacturing the storage device
DE60230110D1 (en) * 2002-02-25 2009-01-15 St Microelectronics Srl Optically readable molecular memory fabricated using carbon nanotubes and methods for storing information in this molecular memory
DE10210626A1 (en) * 2002-03-11 2003-09-25 Transmit Technologietransfer Process for the production of hollow fibers
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6899945B2 (en) 2002-03-19 2005-05-31 William Marsh Rice University Entangled single-wall carbon nanotube solid material and methods for making same
US6760245B2 (en) 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
US6794914B2 (en) 2002-05-24 2004-09-21 Qualcomm Incorporated Non-volatile multi-threshold CMOS latch with leakage control
US6759693B2 (en) 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
TWI282092B (en) 2002-06-28 2007-06-01 Brilliance Semiconductor Inc Nonvolatile static random access memory cell
TWI220269B (en) * 2002-07-31 2004-08-11 Ind Tech Res Inst Method for fabricating n-type carbon nanotube device
JP4338948B2 (en) 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 Method for producing carbon nanotube semiconductor device
US6809465B2 (en) 2002-08-23 2004-10-26 Samsung Electronics Co., Ltd. Article comprising MEMS-based two-dimensional e-beam sources and method for making the same
JP4547852B2 (en) 2002-09-04 2010-09-22 富士ゼロックス株式会社 Manufacturing method of electrical parts
US20040043148A1 (en) 2002-09-04 2004-03-04 Industrial Technology Research Institute Method for fabricating carbon nanotube device
US6882112B2 (en) * 2002-09-13 2005-04-19 Industrial Technology Research Institute Carbon nanotube field emission display
US7067867B2 (en) 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
JP3906139B2 (en) * 2002-10-16 2007-04-18 株式会社東芝 Magnetic random access memory
US20040077107A1 (en) 2002-10-17 2004-04-22 Nantero, Inc. Method of making nanoscopic tunnel
US20040087162A1 (en) 2002-10-17 2004-05-06 Nantero, Inc. Metal sacrificial layer
US20040075159A1 (en) 2002-10-17 2004-04-22 Nantero, Inc. Nanoscopic tunnel
KR100790859B1 (en) 2002-11-15 2008-01-03 삼성전자주식회사 Nonvolatile memory device utilizing vertical nanotube
US7052588B2 (en) 2002-11-27 2006-05-30 Molecular Nanosystems, Inc. Nanotube chemical sensor based on work function of electrodes
EP1585845A1 (en) 2003-01-13 2005-10-19 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
CN1720346B (en) 2003-01-13 2011-12-21 南泰若股份有限公司 Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
AU2003303765A1 (en) 2003-01-13 2004-08-13 Nantero, Inc. Carbon nanotube films, layers, fabrics, ribbons, elements and articles
DE10301480B4 (en) 2003-01-16 2006-04-20 Infineon Technologies Ag Method of making semiconductor device pins
US6919740B2 (en) 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7075141B2 (en) 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7113426B2 (en) * 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US6995046B2 (en) * 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
TWI222742B (en) * 2003-05-05 2004-10-21 Ind Tech Res Inst Fabrication and structure of carbon nanotube-gate transistor
US7780918B2 (en) * 2003-05-14 2010-08-24 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US6982903B2 (en) 2003-06-09 2006-01-03 Nantero, Inc. Field effect devices having a source controlled via a nanotube switching element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US6882256B1 (en) * 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
CN101562049B (en) 2003-08-13 2012-09-05 南泰若股份有限公司 Nanotube-based switching elements with multiple controls and circuits made thereof
JP2007502545A (en) 2003-08-13 2007-02-08 ナンテロ，インク． Nanotube-based exchange element with a plurality of control devices and circuit produced from said element
US7115960B2 (en) 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US20050052894A1 (en) * 2003-09-09 2005-03-10 Nantero, Inc. Uses of nanofabric-based electro-mechanical switches
JP2005101424A (en) * 2003-09-26 2005-04-14 Sony Corp Method for manufacturing field-effect semiconductor device
KR100545212B1 (en) * 2003-12-26 2006-01-24 동부아남반도체 주식회사 Non-volatile memory device with oxide stack and non-volatile SRAM using the same
KR100580292B1 (en) * 2003-12-31 2006-05-15 동부일렉트로닉스 주식회사 Non-volatile memory device
KR100599106B1 (en) * 2003-12-31 2006-07-12 동부일렉트로닉스 주식회사 Non-volatile memory device and method for fabricating the same
KR100620218B1 (en) * 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 Semiconductor device
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US6969651B1 (en) 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US6955937B1 (en) 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US20060237799A1 (en) * 2005-04-21 2006-10-26 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7394687B2 (en) 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US8008745B2 (en) 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7915122B2 (en) 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7541216B2 (en) 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7402770B2 (en) * 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US20060292716A1 (en) 2005-06-27 2006-12-28 Lsi Logic Corporation Use selective growth metallization to improve electrical connection between carbon nanotubes and electrodes
KR100723412B1 (en) * 2005-11-10 2007-05-30 삼성전자주식회사 Nonvolatile Memory Device using Nanotube

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044343A (en) * 1975-05-02 1977-08-23 Tokyo Shibaura Electric Co., Ltd. Non-volatile random access memory system
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6548841B2 (en) * 2000-11-09 2003-04-15 Texas Instruments Incorporated Nanomechanical switches and circuits

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KINARET J.M. ET AL.: "A carbon-nanotube-based nanorelay", APPLIED PHYSICS LETTERS, vol. 82, February 2003 (2003-02-01), pages 1287 - 1289, XP012034873 *
RUECKES T. ET AL.: "Carbon nanotube-based nonvolatile random access memory for molecular computing", SCIENCE, vol. 289, July 2000 (2000-07-01), pages 94 - 97, XP002227401 *

Also Published As

Publication number Publication date
US20130134393A1 (en) 2013-05-30
US6982903B2 (en) 2006-01-03
US20070108482A1 (en) 2007-05-17
US20120181621A1 (en) 2012-07-19
WO2005001899A2 (en) 2005-01-06
US20070296019A1 (en) 2007-12-27
US20050062062A1 (en) 2005-03-24
US7211854B2 (en) 2007-05-01
US20100025659A1 (en) 2010-02-04
US8125039B2 (en) 2012-02-28
US8699268B2 (en) 2014-04-15
EP1634296A4 (en) 2007-02-14
US7649769B2 (en) 2010-01-19
EP1634296A2 (en) 2006-03-15
US7115901B2 (en) 2006-10-03
US20050074926A1 (en) 2005-04-07
US7280394B2 (en) 2007-10-09
US20050056866A1 (en) 2005-03-17
US20070020859A1 (en) 2007-01-25
US20050062070A1 (en) 2005-03-24
US20080225572A1 (en) 2008-09-18
US7268044B2 (en) 2007-09-11
TW200518337A (en) 2005-06-01
US20050056825A1 (en) 2005-03-17
CA2528804A1 (en) 2005-01-06
US20050062035A1 (en) 2005-03-24
US20050063244A1 (en) 2005-03-24
US20070121364A1 (en) 2007-05-31
US7928523B2 (en) 2011-04-19
US7161218B2 (en) 2007-01-09
US7301802B2 (en) 2007-11-27
US7569880B2 (en) 2009-08-04
US7112493B2 (en) 2006-09-26

Similar Documents

Publication Publication Date Title
WO2005001899A3 (en) Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
CA2570429A1 (en) Receiver circuit using nanotube-based switches and transistors
WO2006007196A3 (en) Nanotube-based transfer devices and related circuits
ATE419676T1 (en) SWITCHING DEVICE WITH INTEGRATED NANOTUBE AND FIELD EFFECT TECHNOLOGY
KR950015422A (en) Inductance Variable Device
EP1885066A3 (en) Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
ATE497648T1 (en) DRIVER CIRCUIT FOR SWITCHING DEVICE AND CONTROL METHOD THEREOF
WO2009031567A1 (en) Switching device for electric circuit
FR2846470B1 (en) ELECTRICAL SWITCHING DEVICE, RELAY AND ELECTRICAL DEVICE COMPRISING SUCH A DEVICE
WO2010014974A3 (en) Phase transition devices and smart capacitive devices
KR910007018A (en) Multi-circuit controller
GB2433850A (en) Power switches
TW200643887A (en) Sample-hold circuit and semiconductor device
TW200707905A (en) Semiconductor device, power supply device, and information processing device
WO2000067379A3 (en) Method and device for the open-load diagnosis of a switching stage
ATE405990T1 (en) MOS SWITCHING NETWORK
JP2004205957A5 (en)
TW200608580A (en) Semiconductor device
JP2006047984A5 (en)
WO2004088719A3 (en) Nanotube-on-gate fet structures and applications
SE0401638L (en) Control circuit
ATE166193T1 (en) THREE TERMINAL NON-INVERTING TRANSISTOR SWITCHES
TW200643426A (en) Switching element for characteristic inspection, and characteristic inspection method
DE602005019745D1 (en) ACTUATOR FOR AN ELECTRIC ROLLER WITH CONTROL INTERFACE WITH ELECTRICAL INTERRUPTER CONTACTS
JP2003091260A5 (en) Semiconductor device and display device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2528804

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 2004754836

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2004754836

Country of ref document: EP