WO2005006161A3 - Reference voltage generator - Google Patents

Reference voltage generator Download PDF

Info

Publication number
WO2005006161A3
WO2005006161A3 PCT/US2004/020202 US2004020202W WO2005006161A3 WO 2005006161 A3 WO2005006161 A3 WO 2005006161A3 US 2004020202 W US2004020202 W US 2004020202W WO 2005006161 A3 WO2005006161 A3 WO 2005006161A3
Authority
WO
WIPO (PCT)
Prior art keywords
controller
voltage
memory module
memory
voltage amplitude
Prior art date
Application number
PCT/US2004/020202
Other languages
French (fr)
Other versions
WO2005006161A2 (en
Inventor
Jason Ross
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to EP04755989A priority Critical patent/EP1639438A2/en
Priority to JP2006515369A priority patent/JP4335254B2/en
Publication of WO2005006161A2 publication Critical patent/WO2005006161A2/en
Publication of WO2005006161A3 publication Critical patent/WO2005006161A3/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Abstract

Voltage differences between memory module power sources and memory controller power sources are corrected for when interpreting data signals passed between memory modules and a controller. Correction is provided by the reference voltage generated from the memory module or controller power source voltage so that if the voltage amplitude of a data signal transmitted by the memory module or controller varies due to changes in the power source voltage, the reference signal voltage amplitude will correspondingly vary. Thus, the data signal receiving controller or memory module can use the reference signal to properly interpret the voltage amplitude of data received.
PCT/US2004/020202 2003-06-30 2004-06-23 Reference voltage generator WO2005006161A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04755989A EP1639438A2 (en) 2003-06-30 2004-06-23 Reference voltage generator
JP2006515369A JP4335254B2 (en) 2003-06-30 2004-06-23 Reference voltage generator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/611,278 US7016249B2 (en) 2003-06-30 2003-06-30 Reference voltage generator
US10/611,278 2003-06-30

Publications (2)

Publication Number Publication Date
WO2005006161A2 WO2005006161A2 (en) 2005-01-20
WO2005006161A3 true WO2005006161A3 (en) 2005-06-30

Family

ID=33541287

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/020202 WO2005006161A2 (en) 2003-06-30 2004-06-23 Reference voltage generator

Country Status (7)

Country Link
US (1) US7016249B2 (en)
EP (1) EP1639438A2 (en)
JP (1) JP4335254B2 (en)
KR (1) KR100668003B1 (en)
CN (1) CN100418038C (en)
TW (1) TWI256794B (en)
WO (1) WO2005006161A2 (en)

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US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
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US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
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US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
GB2444663B (en) 2005-09-02 2011-12-07 Metaram Inc Methods and apparatus of stacking drams
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
JP5020625B2 (en) * 2006-12-22 2012-09-05 キヤノン株式会社 Interface circuit
US7853808B2 (en) * 2007-01-18 2010-12-14 International Business Machines Corporation Independent processor voltage supply
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US7729168B2 (en) 2007-06-28 2010-06-01 Intel Corporation Reduced signal level support for memory devices
JP5084372B2 (en) * 2007-07-03 2012-11-28 キヤノン株式会社 Data processing apparatus and data processing apparatus control method
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
KR20090036395A (en) * 2007-10-09 2009-04-14 주식회사 하이닉스반도체 Circuit for cognizance of reference voltage of semiconductor memory apparatus
US7710144B2 (en) * 2008-07-01 2010-05-04 International Business Machines Corporation Controlling for variable impedance and voltage in a memory system
US8089813B2 (en) * 2008-07-18 2012-01-03 International Business Machines Corporation Controllable voltage reference driver for a memory system
US7932705B2 (en) * 2008-07-24 2011-04-26 International Business Machines Corporation Variable input voltage regulator
JP2010079445A (en) * 2008-09-24 2010-04-08 Toshiba Corp Ssd device
US8018753B2 (en) * 2008-10-30 2011-09-13 Hewlett-Packard Development Company, L.P. Memory module including voltage sense monitoring interface
EP2441007A1 (en) 2009-06-09 2012-04-18 Google, Inc. Programming of dimm termination resistance values
WO2011058393A1 (en) 2009-11-12 2011-05-19 Freescale Semiconductor, Inc. Integrated circuit and method for reduction of supply voltage changes
US8704555B2 (en) 2009-11-30 2014-04-22 Freescale Semiconductor, Inc. Integrated circuit comprising reference voltage generation circuitry and electronic device
US8867295B2 (en) * 2010-12-17 2014-10-21 Enpirion, Inc. Power converter for a memory module
JP4778113B1 (en) * 2010-12-27 2011-09-21 株式会社末松電子製作所 Electric fence and control method thereof, electric fence power supply device and electric fence control circuit
US8675390B2 (en) * 2011-10-21 2014-03-18 Qualcomm Incorporated System and method for MRAM having controlled averagable and isolatable voltage reference
US9552164B2 (en) * 2012-11-30 2017-01-24 Intel Corporation Apparatus, method and system for determining reference voltages for a memory
US9661248B2 (en) * 2013-12-13 2017-05-23 Cista System Corp. Integrated circuit having flexible reference
US9509217B2 (en) 2015-04-20 2016-11-29 Altera Corporation Asymmetric power flow controller for a power converter and method of operating the same
US20190073020A1 (en) * 2017-09-01 2019-03-07 Intel Corporation Dynamic memory offlining and voltage scaling
US10720831B2 (en) 2017-12-27 2020-07-21 Intel Corporation Reference voltage generation
TWI665552B (en) * 2018-08-01 2019-07-11 華邦電子股份有限公司 Circuit for recovering from power loss and electronic device using the same circuit and method thereof
US11271566B2 (en) * 2018-12-14 2022-03-08 Integrated Device Technology, Inc. Digital logic compatible inputs in compound semiconductor circuits
CN111289884A (en) * 2018-12-27 2020-06-16 展讯通信（上海）有限公司 Testing device, chip and method for testing voltage of memory

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20010042216A1 (en) * 2000-05-08 2001-11-15 Tae-Sung Jung Memory interface systems that couple a memory to a memory controller and are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller
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Publication number Priority date Publication date Assignee Title
US20010042216A1 (en) * 2000-05-08 2001-11-15 Tae-Sung Jung Memory interface systems that couple a memory to a memory controller and are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller
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US20030080795A1 (en) * 2001-10-29 2003-05-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Also Published As

Publication number Publication date
US20040268161A1 (en) 2004-12-30
TW200511755A (en) 2005-03-16
KR100668003B1 (en) 2007-01-16
WO2005006161A2 (en) 2005-01-20
TWI256794B (en) 2006-06-11
KR20060028652A (en) 2006-03-30
JP4335254B2 (en) 2009-09-30
US7016249B2 (en) 2006-03-21
JP2007520771A (en) 2007-07-26
EP1639438A2 (en) 2006-03-29
CN100418038C (en) 2008-09-10
CN1813232A (en) 2006-08-02

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