WO2005006402A3 - Emitter wrap-through back contact solar cells on thin silicon wafers - Google Patents

Emitter wrap-through back contact solar cells on thin silicon wafers Download PDF

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Publication number
WO2005006402A3
WO2005006402A3 PCT/US2004/021219 US2004021219W WO2005006402A3 WO 2005006402 A3 WO2005006402 A3 WO 2005006402A3 US 2004021219 W US2004021219 W US 2004021219W WO 2005006402 A3 WO2005006402 A3 WO 2005006402A3
Authority
WO
WIPO (PCT)
Prior art keywords
cell
substrate
solar cell
emitter wrap
thin
Prior art date
Application number
PCT/US2004/021219
Other languages
French (fr)
Other versions
WO2005006402A2 (en
Inventor
Russell Schmit
James M Gee
Original Assignee
Advent Solar Inc
Russell Schmit
James M Gee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advent Solar Inc, Russell Schmit, James M Gee filed Critical Advent Solar Inc
Priority to BRPI0412198-8A priority Critical patent/BRPI0412198A/en
Priority to CA002530684A priority patent/CA2530684A1/en
Priority to JP2006517827A priority patent/JP2007525014A/en
Priority to EP04756543A priority patent/EP1649522A4/en
Publication of WO2005006402A2 publication Critical patent/WO2005006402A2/en
Publication of WO2005006402A3 publication Critical patent/WO2005006402A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

A thin emitter wrap-through solar cell and method for making a thin emitter wrap­through solar cell. The cell preferably includes a silicon wafer substrate having a thickness of less than 280 microns. The p-type area on the back side of the cell is minimized, which maximizes the collector area and reduces or eliminates stress due to passivation of the p-type area, which is required for conventional solar cells. The efficiency of the cell of the present invention peaks for a much smaller thickness than that for conventional cells. Thus thin wafers of inexpensive, lower quality silicon may be used without a significant efficiency penalty, providing a large cost advantage over other solar cell configurations. Vias through the substrate, which connect emitter layers on the front and back surfaces of the substrate, may consist of holes which are doped, or alternatively may be solid doped channels formed by migration of a solvent, which preferably contains a dopant, caused by a gradient-driven process.
PCT/US2004/021219 2003-06-30 2004-06-30 Emitter wrap-through back contact solar cells on thin silicon wafers WO2005006402A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BRPI0412198-8A BRPI0412198A (en) 2003-06-30 2004-06-30 encapsulated emitter solar cell (ewt) and method to produce the same
CA002530684A CA2530684A1 (en) 2003-06-30 2004-06-30 Emitter wrap-through back contact solar cells on thin silicon wafers
JP2006517827A JP2007525014A (en) 2003-06-30 2004-06-30 Emitter wrapped through back contact solar cell on thin silicon wafer
EP04756543A EP1649522A4 (en) 2003-06-30 2004-06-30 Emitter wrap-through back contact solar cells on thin silicon wafers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US48412203P 2003-06-30 2003-06-30
US60/484,122 2003-06-30
US10/880,190 2004-06-29
US10/880,190 US7649141B2 (en) 2003-06-30 2004-06-29 Emitter wrap-through back contact solar cells on thin silicon wafers

Publications (2)

Publication Number Publication Date
WO2005006402A2 WO2005006402A2 (en) 2005-01-20
WO2005006402A3 true WO2005006402A3 (en) 2006-02-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/021219 WO2005006402A2 (en) 2003-06-30 2004-06-30 Emitter wrap-through back contact solar cells on thin silicon wafers

Country Status (7)

Country Link
US (1) US7649141B2 (en)
EP (1) EP1649522A4 (en)
JP (1) JP2007525014A (en)
KR (1) KR20060035657A (en)
BR (1) BRPI0412198A (en)
CA (1) CA2530684A1 (en)
WO (1) WO2005006402A2 (en)

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