WO2005008763A2 - Methods of forming deuterated silicon nitride-containing materials - Google Patents
Methods of forming deuterated silicon nitride-containing materials Download PDFInfo
- Publication number
- WO2005008763A2 WO2005008763A2 PCT/US2004/021157 US2004021157W WO2005008763A2 WO 2005008763 A2 WO2005008763 A2 WO 2005008763A2 US 2004021157 W US2004021157 W US 2004021157W WO 2005008763 A2 WO2005008763 A2 WO 2005008763A2
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- WO
- WIPO (PCT)
- Prior art keywords
- deuterated
- silicon
- silicon nitride
- containing material
- nitrogen compound
- Prior art date
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- 239000000463 material Substances 0.000 title claims abstract description 126
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 83
- 229910017464 nitrogen compound Inorganic materials 0.000 claims abstract description 40
- 150000002830 nitrogen compounds Chemical class 0.000 claims abstract description 40
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002210 silicon-based material Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 150000003377 silicon compounds Chemical class 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 17
- 150000003376 silicon Chemical class 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010276 construction Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 3
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 101100348566 Arabidopsis thaliana NHD2 gene Proteins 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 24
- 238000012545 processing Methods 0.000 description 19
- 239000002243 precursor Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 239000012634 fragment Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052805 deuterium Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- YEBRIDHEOJIAAW-UHFFFAOYSA-N silicon;tetrachlorosilane Chemical compound [Si].Cl[Si](Cl)(Cl)Cl YEBRIDHEOJIAAW-UHFFFAOYSA-N 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006517818A JP2007525013A (en) | 2003-07-03 | 2004-06-30 | Method for producing deuterium-substituted silicon nitride-containing material |
EP04777378A EP1652223B1 (en) | 2003-07-03 | 2004-06-30 | Methods of forming deuterated silicon oxynitride-containing materials |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/612,836 US6881636B2 (en) | 2003-07-03 | 2003-07-03 | Methods of forming deuterated silicon nitride-containing materials |
US10/612,836 | 2003-07-03 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005008763A2 true WO2005008763A2 (en) | 2005-01-27 |
WO2005008763A3 WO2005008763A3 (en) | 2005-05-12 |
WO2005008763B1 WO2005008763B1 (en) | 2005-07-14 |
Family
ID=33552598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/021157 WO2005008763A2 (en) | 2003-07-03 | 2004-06-30 | Methods of forming deuterated silicon nitride-containing materials |
Country Status (6)
Country | Link |
---|---|
US (1) | US6881636B2 (en) |
EP (1) | EP1652223B1 (en) |
JP (1) | JP2007525013A (en) |
KR (1) | KR100743324B1 (en) |
CN (1) | CN100477112C (en) |
WO (1) | WO2005008763A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210054502A1 (en) * | 2019-08-19 | 2021-02-25 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US20210054501A1 (en) * | 2019-08-19 | 2021-02-25 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US11970768B2 (en) * | 2019-08-19 | 2024-04-30 | Tokyo Electron Limited | Film forming method and film forming apparatus |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080207007A1 (en) | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
US8017182B2 (en) * | 2007-06-21 | 2011-09-13 | Asm International N.V. | Method for depositing thin films by mixed pulsed CVD and ALD |
US8536640B2 (en) * | 2007-07-20 | 2013-09-17 | Cypress Semiconductor Corporation | Deuterated film encapsulation of nonvolatile charge trap memory device |
US9018693B2 (en) * | 2007-07-20 | 2015-04-28 | Cypress Semiconductor Corporation | Deuterated film encapsulation of nonvolatile charge trap memory device |
CN105895649B (en) * | 2016-04-11 | 2018-11-09 | 上海华力微电子有限公司 | A method of reducing CIS device noises by changing SAB film quality |
CN108660509A (en) * | 2017-03-27 | 2018-10-16 | 上海新昇半导体科技有限公司 | A kind of pulling of silicon single crystal method |
JP6854260B2 (en) * | 2018-06-20 | 2021-04-07 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, substrate processing devices, and programs |
KR20210055148A (en) | 2019-11-06 | 2021-05-17 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same |
Citations (4)
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EP0892424A2 (en) * | 1997-07-16 | 1999-01-20 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
US6025255A (en) * | 1998-06-25 | 2000-02-15 | Vanguard International Semiconductor Corporation | Two-step etching process for forming self-aligned contacts |
US6114734A (en) * | 1997-07-28 | 2000-09-05 | Texas Instruments Incorporated | Transistor structure incorporating a solid deuterium source for gate interface passivation |
US20030222318A1 (en) * | 2002-05-29 | 2003-12-04 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6089575A (en) * | 1983-10-21 | 1985-05-20 | Seiko Epson Corp | Production of silicon nitride film |
US5872387A (en) * | 1996-01-16 | 1999-02-16 | The Board Of Trustees Of The University Of Illinois | Deuterium-treated semiconductor devices |
JPH1126707A (en) * | 1997-07-01 | 1999-01-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
US6177340B1 (en) * | 1999-02-18 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure |
US6521977B1 (en) * | 2000-01-21 | 2003-02-18 | International Business Machines Corporation | Deuterium reservoirs and ingress paths |
-
2003
- 2003-07-03 US US10/612,836 patent/US6881636B2/en not_active Expired - Lifetime
-
2004
- 2004-06-30 CN CNB2004800252632A patent/CN100477112C/en active Active
- 2004-06-30 WO PCT/US2004/021157 patent/WO2005008763A2/en active Application Filing
- 2004-06-30 JP JP2006517818A patent/JP2007525013A/en active Pending
- 2004-06-30 EP EP04777378A patent/EP1652223B1/en active Active
- 2004-06-30 KR KR1020057025376A patent/KR100743324B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0892424A2 (en) * | 1997-07-16 | 1999-01-20 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
US6114734A (en) * | 1997-07-28 | 2000-09-05 | Texas Instruments Incorporated | Transistor structure incorporating a solid deuterium source for gate interface passivation |
US6025255A (en) * | 1998-06-25 | 2000-02-15 | Vanguard International Semiconductor Corporation | Two-step etching process for forming self-aligned contacts |
US20030222318A1 (en) * | 2002-05-29 | 2003-12-04 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
Non-Patent Citations (3)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 009, no. 233 (C-304), 19 September 1985 (1985-09-19) -& JP 60 089575 A (SUWA SEIKOSHA KK), 20 May 1985 (1985-05-20) -& DATABASE WPI Section Ch, Week 198526 Derwent Publications Ltd., London, GB; Class L02, AN 1985-156978 XP002319876 * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04, 30 April 1999 (1999-04-30) -& JP 11 026707 A (TOSHIBA CORP), 29 January 1999 (1999-01-29) * |
TANAKA M ET AL: "Realization of high performance dual gate DRAMs without boron penetration by application of tetrachlorosilane sificon nitride films" 12 June 2001 (2001-06-12), 2001 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. KYOTO, JAPAN, JUNE 12 - 14, 2001, SYMPOSIUM ON VLSI TECHNOLOGY, TOKYO : JSAP, JP, PAGE(S) 123-124 , XP010552030 ISBN: 4-89114-012-7 cited in the application the whole document * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210054502A1 (en) * | 2019-08-19 | 2021-02-25 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US20210054501A1 (en) * | 2019-08-19 | 2021-02-25 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US11970768B2 (en) * | 2019-08-19 | 2024-04-30 | Tokyo Electron Limited | Film forming method and film forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
EP1652223B1 (en) | 2012-09-19 |
CN100477112C (en) | 2009-04-08 |
EP1652223A2 (en) | 2006-05-03 |
KR20060036412A (en) | 2006-04-28 |
JP2007525013A (en) | 2007-08-30 |
US6881636B2 (en) | 2005-04-19 |
CN1849704A (en) | 2006-10-18 |
WO2005008763A3 (en) | 2005-05-12 |
WO2005008763B1 (en) | 2005-07-14 |
KR100743324B1 (en) | 2007-07-26 |
US20050003680A1 (en) | 2005-01-06 |
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