WO2005010950A2 - Ultrasonic assisted etch using corrosive liquids - Google Patents
Ultrasonic assisted etch using corrosive liquids Download PDFInfo
- Publication number
- WO2005010950A2 WO2005010950A2 PCT/US2004/023905 US2004023905W WO2005010950A2 WO 2005010950 A2 WO2005010950 A2 WO 2005010950A2 US 2004023905 W US2004023905 W US 2004023905W WO 2005010950 A2 WO2005010950 A2 WO 2005010950A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- inner tank
- etching
- workpiece
- etching solution
- aqueous solution
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Definitions
- an ultrasonic etching 5 apparatus for chemically-etching a workpiece.
- the chemical is an acid.
- the chemical is a base.
- the apparatus includes an outer tank at least partially filled with an aqueous solution, an inner tank including an chemical-resistant polymer and at least partially disposed within the outer tank and in contact with the aqueous solution.
- the inner tank is at least partially filled with at least one liter of an acidic or basic solution having a total acidity or basicity of at least 10% wt, and the inner tank has at least a sidewall and a base and defining an upper mouth, and is receptive to the workpiece.
- FIG. 1 is an illustration of a prior art ultrasonic acid-etching apparatus.
- FIG. 2 is an illustration of a prior art ultrasonic water-cleaning overflow apparatus.
- FIG. 3 a is an illustration of an apparatus for etching a chamber part or other workpiece using an acid or base according to one embodiment of the invention.
- FIG. 3b is an illustration of the inner tank showing the increase in partial pressure according to one embodiment of the invention.
- FIG. 4 is an illustration of a jig for holding the outer circumference of a workpiece according to one embodiment of the invention.
- FIG. 5a is an enlarged view showing a screw tip of FIG. 4 according to one embodiment of the invention.
- FIG. 5b is an enlarged view showing the slotted screw tip of FIG.
- the materials of the inner i 5 tank and lid of the present invention are both chemically inert and compatible with hydrofluoric acid (HF), hydrochloric acid (HCL), sulfuric acid (H 2 S0 4 ), phosphoric acid (H 3 PO 4 ), nitric acid (HN0 3 ), acetic acid (CH 3C OOH), hydrogen peroxide (H 2 0 2 ), ammonium hydroxide (NH OH), tetramethyl ammonium hydroxide (TMAH), sodium hydroxide (NaOH), potassium hydroxide (KOH) and isopropyl alcohol (IP A).
- HF hydrofluoric acid
- HCL hydrochloric acid
- sulfuric acid H 2 S0 4
- phosphoric acid H 3 PO 4
- nitric acid HN0 3
- acetic acid CH 3C OOH
- hydrogen peroxide H 2 0 2
- ammonium hydroxide NH OH
- TMAH tetramethyl ammonium hydroxide
- an aqueous solution heating element may be provided on the aqueous solution supply and/or circulation line, if any, to preheat the aqueous solution to a predetermined temperature before being supplied into the outer tank.
- Inner tanks 302 and 304 are at least partially filled with an etching solution 322, such as hydrofluoric acid, nitric acid and/or hydrochloric acid; or bases such as NaOH or KOH, for cleaning, etching and/or texturing workpiece 305, which is typically formed of silicon, ceramic (e.g., A1N, A1 2 0 3 ), quartz and/or silicon carbide.
- Lids 324 and/or 326 are placed on top of inner tank mouths 324 and 326, the shape of which may be square, rectangle, triangle, circle, oval or the like.
- the cross-section of the lids are substantially the same as the cross-section of the mouth of the inner tank mouths.
- the lids create at least a partial seal between the mouth of the inner tanks and the lower surfaces of the lids.
- the seal is a hermetic seal. As indicated in FIG.
- the lid 326 also functions to increase the partial pressure of the gases 395 above the etching solution 322 such that less aerosol formation and/or vaporization of the etching solution occurs by keeping it in a liquid state and preventing a concentration change of the etching solution.
- the lid also functions as a simple safety valve capable of releasing pressure before dangerous levels are achieved, e.g. before the etching solution reaches a certain temperature.
- the lid is also preferably formed of a chemical-resistant polymer. For gases that may escape from the inner or outer tanks, an exhaust hood
- Example 1 For the acidic etching of a quartz workpiece using a 1 : 1 : 1 ratio of hydrofluoric acid (49% wt)/nitric acid (70% wt)/water mixture, which corresponds to an acid concentration of 16% wt forHF and 23% wt for H ⁇ 0 3 , at 20 ⁇ 5°C, with an ultrasonic energy of 25 to 40kHz and an ultrasonic power of 30-50 watts/gallon, an etch of 0.5 ⁇ m per minute was obtained.
- Example 2 A quartz insulator ring from a semiconductor tool is ultrasonically etched with 1 : 1 : 1 or 1 :2:2 volume ratios of hydrofluoric acid (49% wt)/nitric acid (70% wt)/water at 20t5°C with an ultrasonic energy of 25 to 40kHz and an ultrasonic power of 30-50 watts/gallon, to etch off 5 to lOO ⁇ m of material.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067001651A KR101120707B1 (en) | 2003-07-24 | 2004-07-23 | Ultrasonic assisted etch using corrosive liquids |
JP2006521293A JP4603542B2 (en) | 2003-07-24 | 2004-07-23 | Ultrasonic assisted etching using corrosive liquid |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/627,416 | 2003-07-24 | ||
US10/627,416 US7091132B2 (en) | 2003-07-24 | 2003-07-24 | Ultrasonic assisted etch using corrosive liquids |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005010950A2 true WO2005010950A2 (en) | 2005-02-03 |
WO2005010950A3 WO2005010950A3 (en) | 2005-07-07 |
Family
ID=34080634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/023905 WO2005010950A2 (en) | 2003-07-24 | 2004-07-23 | Ultrasonic assisted etch using corrosive liquids |
Country Status (7)
Country | Link |
---|---|
US (3) | US7091132B2 (en) |
JP (2) | JP4603542B2 (en) |
KR (1) | KR101120707B1 (en) |
CN (2) | CN1882397B (en) |
SG (2) | SG145689A1 (en) |
TW (1) | TWI244693B (en) |
WO (1) | WO2005010950A2 (en) |
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2004
- 2004-07-22 CN CN200480027634.0A patent/CN1882397B/en active Active
- 2004-07-22 SG SG200805492-6A patent/SG145689A1/en unknown
- 2004-07-23 KR KR1020067001651A patent/KR101120707B1/en active IP Right Grant
- 2004-07-23 SG SG200805491-8A patent/SG163440A1/en unknown
- 2004-07-23 WO PCT/US2004/023905 patent/WO2005010950A2/en active Application Filing
- 2004-07-23 JP JP2006521293A patent/JP4603542B2/en active Active
- 2004-07-23 CN CNB200480027643XA patent/CN100449699C/en active Active
- 2004-07-26 TW TW093122253A patent/TWI244693B/en active
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2006
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Also Published As
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SG163440A1 (en) | 2010-08-30 |
KR20060093323A (en) | 2006-08-24 |
WO2005010950A3 (en) | 2005-07-07 |
CN1882397A (en) | 2006-12-20 |
JP2007500431A (en) | 2007-01-11 |
JP4603542B2 (en) | 2010-12-22 |
TWI244693B (en) | 2005-12-01 |
CN1882397B (en) | 2014-06-04 |
CN100449699C (en) | 2009-01-07 |
US20060243390A1 (en) | 2006-11-02 |
JP5475599B2 (en) | 2014-04-16 |
US7091132B2 (en) | 2006-08-15 |
US20050016565A1 (en) | 2005-01-27 |
US7377991B2 (en) | 2008-05-27 |
CN1883034A (en) | 2006-12-20 |
TW200520086A (en) | 2005-06-16 |
SG145689A1 (en) | 2008-09-29 |
US20050016959A1 (en) | 2005-01-27 |
KR101120707B1 (en) | 2012-03-23 |
JP2011017085A (en) | 2011-01-27 |
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