WO2005036265A3 - Photoresist compositions comprising diamondoid derivatives - Google Patents

Photoresist compositions comprising diamondoid derivatives Download PDF

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Publication number
WO2005036265A3
WO2005036265A3 PCT/US2004/031929 US2004031929W WO2005036265A3 WO 2005036265 A3 WO2005036265 A3 WO 2005036265A3 US 2004031929 W US2004031929 W US 2004031929W WO 2005036265 A3 WO2005036265 A3 WO 2005036265A3
Authority
WO
WIPO (PCT)
Prior art keywords
diamondoid
photoresist compositions
contain
group
containing pendant
Prior art date
Application number
PCT/US2004/031929
Other languages
French (fr)
Other versions
WO2005036265A2 (en
Inventor
Shenggao Liu
Jeremy E Dahl
Robert M Carlson
Original Assignee
Chevron Usa Inc
Shenggao Liu
Jeremy E Dahl
Robert M Carlson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chevron Usa Inc, Shenggao Liu, Jeremy E Dahl, Robert M Carlson filed Critical Chevron Usa Inc
Priority to JP2006534053A priority Critical patent/JP2007507593A/en
Priority to BRPI0414996-3A priority patent/BRPI0414996A/en
Priority to AU2004281038A priority patent/AU2004281038A1/en
Priority to CA002540570A priority patent/CA2540570A1/en
Priority to MXPA06003478A priority patent/MXPA06003478A/en
Priority to EP04809820A priority patent/EP1671184A4/en
Publication of WO2005036265A2 publication Critical patent/WO2005036265A2/en
Publication of WO2005036265A3 publication Critical patent/WO2005036265A3/en
Priority to IL174604A priority patent/IL174604A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/44—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with a hydroxy group on a condensed ring system having more than three rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/86—Ring systems containing bridged rings containing four rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/90—Ring systems containing bridged rings containing more than four rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Abstract

Novel positive-working photoresist compositions are disclosed. The monomers of the base resin of the resist contain diamondoid-containing pendant groups higher than adamantane in the polymantane series; for example, diamantane, triamantane, tetramantane, pentamantane, hexamantane, etc. The diamondoid-containing pendant group may have hydrophilic-enhancing substituents such as a hydroxyl group, and may contain a lactone group. Advantages of the present compositions include enhanced resolution, sensitivity, and adhesion to the substrate.
PCT/US2004/031929 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives WO2005036265A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006534053A JP2007507593A (en) 2003-10-01 2004-09-29 Photoresist composition containing diamond-like derivative
BRPI0414996-3A BRPI0414996A (en) 2003-10-01 2004-09-29 polymerizable diamantyl monomer, polymerizable triamantyl monomer, polymerizable diamondoid-containing monomer, polymer, deposited layer, method of forming a layer patterned photoresist on the surface of a substrate, surface patterned, method of forming a selected pattern on a surface of a substrate, positive-functioning and positive-acting photoresist coating compositions, and methods for preparing hydroxylated diamonds and for preparing diamantane methacrylate
AU2004281038A AU2004281038A1 (en) 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives
CA002540570A CA2540570A1 (en) 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives
MXPA06003478A MXPA06003478A (en) 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives.
EP04809820A EP1671184A4 (en) 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives
IL174604A IL174604A0 (en) 2003-10-01 2006-03-27 Photoresist compositions comprising diamondoid derivatives

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US50822203P 2003-10-01 2003-10-01
US60/508,222 2003-10-01
US10/764,407 2004-01-23
US10/764,407 US7488565B2 (en) 2003-10-01 2004-01-23 Photoresist compositions comprising diamondoid derivatives

Publications (2)

Publication Number Publication Date
WO2005036265A2 WO2005036265A2 (en) 2005-04-21
WO2005036265A3 true WO2005036265A3 (en) 2006-01-12

Family

ID=34396438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/031929 WO2005036265A2 (en) 2003-10-01 2004-09-29 Photoresist compositions comprising diamondoid derivatives

Country Status (11)

Country Link
US (4) US7488565B2 (en)
EP (1) EP1671184A4 (en)
JP (1) JP2007507593A (en)
KR (1) KR20060080935A (en)
AU (1) AU2004281038A1 (en)
BR (1) BRPI0414996A (en)
CA (1) CA2540570A1 (en)
IL (1) IL174604A0 (en)
MX (1) MXPA06003478A (en)
TW (1) TW200521627A (en)
WO (1) WO2005036265A2 (en)

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CN115947885A (en) * 2021-10-08 2023-04-11 上海芯刻微材料技术有限责任公司 Resin and ArF immersion photoresist composition containing same
CN115960296A (en) * 2021-10-08 2023-04-14 上海芯刻微材料技术有限责任公司 Resin and application of ArF immersed photoresist containing resin
CN115960295A (en) * 2021-10-08 2023-04-14 上海芯刻微材料技术有限责任公司 Resin and preparation method of ArF immersion photoresist containing resin
CN115960299A (en) * 2021-10-12 2023-04-14 上海新阳半导体材料股份有限公司 Preparation method of resin for ArF dry photoetching
CN115960298A (en) * 2021-10-12 2023-04-14 上海新阳半导体材料股份有限公司 Resin and ArF dry-process photoresist composition containing same
CN116003673A (en) * 2021-10-22 2023-04-25 上海芯刻微材料技术有限责任公司 Resin and application of ArF wet photoresist containing resin
CN116003672A (en) * 2021-10-22 2023-04-25 上海芯刻微材料技术有限责任公司 Resin and ArF wet photoresist containing same
CN116003674A (en) * 2021-10-22 2023-04-25 上海芯刻微材料技术有限责任公司 Resin and preparation method of ArF wet photoresist containing resin
CN116023579A (en) * 2021-10-26 2023-04-28 上海新阳半导体材料股份有限公司 Resin and ArF dry photoresist composition containing same
CN116023580A (en) * 2021-10-26 2023-04-28 上海新阳半导体材料股份有限公司 Preparation method of resin for preparing ArF dry photoresist

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