WO2005043250B1 - Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials - Google Patents

Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Info

Publication number
WO2005043250B1
WO2005043250B1 PCT/US2004/035148 US2004035148W WO2005043250B1 WO 2005043250 B1 WO2005043250 B1 WO 2005043250B1 US 2004035148 W US2004035148 W US 2004035148W WO 2005043250 B1 WO2005043250 B1 WO 2005043250B1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
weight
substrate
amount
choline
Prior art date
Application number
PCT/US2004/035148
Other languages
French (fr)
Other versions
WO2005043250A3 (en
WO2005043250A2 (en
Inventor
Richard William Charm
De-Ling Zhou
Robert J Small
Shihying Lee
Original Assignee
Ekc Technology Inc
Richard William Charm
De-Ling Zhou
Robert J Small
Shihying Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc, Richard William Charm, De-Ling Zhou, Robert J Small, Shihying Lee filed Critical Ekc Technology Inc
Priority to JP2006536846A priority Critical patent/JP2007510173A/en
Priority to EP04796185A priority patent/EP1682944A2/en
Publication of WO2005043250A2 publication Critical patent/WO2005043250A2/en
Publication of WO2005043250A3 publication Critical patent/WO2005043250A3/en
Publication of WO2005043250B1 publication Critical patent/WO2005043250B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C11D2111/22—

Abstract

A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.

Claims

AMENDED CLAIMS [received by the International Bureau on 11 August 2005 (11.08.2005); new claims 26 and 27 added; remaining claims unchanged (1 page)]
19. The composition of claim 17, wherein the polar aprotio nitrogen- containing solvent is present in an, amount from about 15% to about 35% by weight.
20. The composition of claim 19, wherein the polar aprotic nitrogen- containing solvent is present in an amount from about 20% to about 30% by weight,
21. The composition of claim 17, wherein the choline derivative is present in an amount from about 0.5% to about 10% by weight.
22. The composition of claim 21 , wherein the choline derivative is present in an amount from about 1% to about 5% by weight 23. The composition of claim 17, wherein the sulfur-containing solvent comprises dimethyl sulfoxide, methyl sulfoxide, or a mixture thereof.
24. The composition of claim 23, wherein the sulfur-containing solvent is present in an amount from about 60% to about 84% by weight
25. The composition of claim 24, wherein the sulfur^-containing solvent is present in an amount from about 66% to about 76% by weight,
26. A method of removing one or more of photoresist, etching residue, and flux material from an integrated circuit substrate, comprising contacting the substrate with a composition of any of claims 1-25, wherein the composition contacts the substrate for a time between 1 minute and 60 minutes and is at a temperature of between 10° C and 100° C.
27. A method of removing one or more of photoresist, etching residue, and flux material from an integrated circuit substrate, comprising: A) providing an integrated circuit substrate comprising copper and a low- material; B) contacting the substrate with a composition comprising: a) between 1% and 70% by weight of a hydroxide or salt of bis-(2-hydroxy- ethyl)-dimethyl ammonium, a hydroxide or salt of tris-(2-hydroxy-ethyl>methyl ammonium, or rαixture thereof, b) water, c) between 0.2% and 20% by weight of an amine, wherein the composition contacts the substrate for a time between 1 minute and 60 minutes and is at a temperature of between 10° C and 100° C; and C) rinsing the substrate.
AMENDED SHEET (ARTICLE 19) 27
PCT/US2004/035148 2003-10-22 2004-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials WO2005043250A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006536846A JP2007510173A (en) 2003-10-22 2004-10-22 Process of using bischoline and trischoline in cleaning quartz coated polysilicon and other materials
EP04796185A EP1682944A2 (en) 2003-10-22 2004-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/689,657 US7135445B2 (en) 2001-12-04 2003-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US10/689,657 2003-10-22

Publications (3)

Publication Number Publication Date
WO2005043250A2 WO2005043250A2 (en) 2005-05-12
WO2005043250A3 WO2005043250A3 (en) 2005-08-11
WO2005043250B1 true WO2005043250B1 (en) 2005-10-20

Family

ID=34549851

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/035148 WO2005043250A2 (en) 2003-10-22 2004-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Country Status (6)

Country Link
US (1) US7135445B2 (en)
EP (1) EP1682944A2 (en)
JP (1) JP2007510173A (en)
KR (1) KR20070003772A (en)
CN (1) CN1871553A (en)
WO (1) WO2005043250A2 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543592B2 (en) 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
KR100639615B1 (en) * 2004-11-02 2006-10-30 주식회사 하이닉스반도체 Cleaning solution and method for cleaning in semiconductor device using the same
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
KR20060064441A (en) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 Non-aqueous, non-corrosive microelectronic cleaning compositions
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids
JP4988165B2 (en) * 2005-03-11 2012-08-01 関東化学株式会社 Photoresist stripping composition and method for stripping photoresist
KR101088568B1 (en) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. Non-aqueous photoresist stripper that inhibits galvanic corrosion
US9329486B2 (en) * 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP4734090B2 (en) * 2005-10-31 2011-07-27 株式会社東芝 Manufacturing method of semiconductor device
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
JP4773562B2 (en) * 2006-05-26 2011-09-14 エルジー・ケム・リミテッド Stripper composition for photoresist
KR101488265B1 (en) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 Composition for stripping and stripping method
CN101842872A (en) * 2007-10-31 2010-09-22 Ekc技术公司 Compounds for photoresist stripping
KR20100007461A (en) * 2008-07-14 2010-01-22 삼성전자주식회사 Cleaning solution for quartz part and method of cleaning using the same
US8481472B2 (en) * 2008-10-09 2013-07-09 Avantor Performance Materials, Inc. Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
JP4903242B2 (en) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド Gluconic acid-containing photoresist cleaning composition for multi-metal device processing
RU2011129239A (en) * 2009-01-22 2013-01-20 Басф Се COMPOSITION FOR CLEANING AFTER CHEMICAL AND MECHANICAL POLISHING
JP2010222552A (en) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd Cleaning composition and cleaning method for liquid crystalline polyester production device using the same
KR101706987B1 (en) * 2009-06-10 2017-02-15 주식회사 동진쎄미켐 Preparing method of liquid composition for stripping an organic dielectric layer
SG177755A1 (en) * 2009-07-30 2012-03-29 Basf Se Post ion implant stripper for advanced semiconductor application
JP2013504782A (en) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． Resist removing composition for forming copper-based wiring
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8058221B2 (en) * 2010-04-06 2011-11-15 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
AU2011371528B2 (en) * 2011-06-22 2015-01-15 Colgate-Palmolive Company Choline salt cleaning compositions
EP2764079A4 (en) * 2011-10-05 2015-06-03 Avantor Performance Mat Inc Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
TWI593796B (en) * 2014-01-29 2017-08-01 台塑生醫科技股份有限公司 Detergent composition for use in removal of soldering flux and detergent made thereof
EP3328969B1 (en) 2015-07-29 2020-04-01 Ecolab USA Inc. Heavy amine neutralizing agents for olefin or styrene production
JP6562789B2 (en) * 2015-09-10 2019-08-21 キヤノン株式会社 Removal method of object to be removed
TWI705132B (en) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 Liquid composition for cleaning semiconductor element, cleaning method of semiconductor element, and manufacturing method of semiconductor element
KR102384908B1 (en) * 2015-11-25 2022-04-08 삼성전자주식회사 Copositions for cleaning magnetic patterns, methods of forming magnetic patterns and methods of manufacturing magnetic memory devices
WO2017218147A1 (en) * 2016-06-13 2017-12-21 Avantor Performance Materials, Llc Cleaning compositions for microelectronic substrates containing aluminum
WO2019109329A1 (en) * 2017-12-08 2019-06-13 Henkel Ag & Co. Kgaa Photoresist stripper compostion
CN113050329A (en) * 2019-12-27 2021-06-29 深圳新宙邦科技股份有限公司 Polyimide type reworking liquid for alignment film

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4339340A (en) 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
JPS5351970A (en) 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
US4294911A (en) 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4403028A (en) 1981-01-26 1983-09-06 Andrews Paper & Chemical Co., Inc. Light sensitive diazonium salts and diazotype materials
US4395479A (en) 1981-09-23 1983-07-26 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4428871A (en) 1981-09-23 1984-01-31 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4464461A (en) 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
JPS62281323A (en) 1986-05-30 1987-12-07 Nec Corp Manufacture of semiconductor device
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
JPS63208043A (en) 1987-02-25 1988-08-29 Kanto Kagaku Kk Water soluble stripping liquid for positive type photoresist
JP2553872B2 (en) 1987-07-21 1996-11-13 東京応化工業株式会社 Stripping solution for photoresist
US4824763A (en) 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JP2578821B2 (en) 1987-08-10 1997-02-05 東京応化工業株式会社 Stripper for positive photoresist
JPH0769618B2 (en) 1987-09-25 1995-07-31 旭化成工業株式会社 Stripping agent for photoresist
JPH01191450A (en) 1988-01-27 1989-08-01 Toshiba Corp Manufacture of semiconductor device
JPH02275631A (en) 1989-01-11 1990-11-09 Dainippon Screen Mfg Co Ltd Method and device for washing and treating substrate
JPH03227009A (en) 1990-01-31 1991-10-08 Matsushita Electron Corp Manufacture of semiconductor device
US5102777A (en) 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
JP2527268B2 (en) 1990-09-17 1996-08-21 東京応化工業株式会社 Release agent composition for resist
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
CA2062027C (en) 1991-03-04 1998-05-19 William Aldrich Liquid control system for diagnostic cartridges used in analytical instruments
JPH04350660A (en) 1991-05-28 1992-12-04 Texas Instr Japan Ltd Peeling solution for positive type photoresist for producing semiconductor device and production of this device
JP3310318B2 (en) 1991-12-27 2002-08-05 任天堂株式会社 Data processing system
US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
JPH0641773A (en) 1992-05-18 1994-02-15 Toshiba Corp Treating liquid for semiconductor wafer
US5739579A (en) 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
JP3244813B2 (en) 1992-11-20 2002-01-07 株式会社東芝 Semiconductor wafer processing solution and processing method
US5417802A (en) 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
JP3449651B2 (en) 1994-09-16 2003-09-22 東京応化工業株式会社 Resist stripper composition
US5635423A (en) 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
US5705430A (en) 1995-06-07 1998-01-06 Advanced Micro Devices, Inc. Dual damascene with a sacrificial via fill
JP3614242B2 (en) 1996-04-12 2005-01-26 三菱瓦斯化学株式会社 Photoresist stripper and method for manufacturing semiconductor integrated circuit
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
JPH11197523A (en) 1998-01-19 1999-07-27 Yamamoto Co Ltd Rice husking and milling machine
JP3490604B2 (en) * 1998-01-26 2004-01-26 多摩化学工業株式会社 Method for producing quaternary ammonium base type semiconductor surface treating agent
PT1105778E (en) * 1998-05-18 2009-09-23 Mallinckrodt Baker Inc Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
WO2002004233A1 (en) * 2000-07-10 2002-01-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
JP2003005383A (en) * 2000-11-30 2003-01-08 Tosoh Corp Resist remover
WO2003007085A1 (en) * 2001-07-13 2003-01-23 Ekc Technology, Inc. Sulfoxide pyrolid(in)one alkanolamine stripping and cleaning composition

Also Published As

Publication number Publication date
JP2007510173A (en) 2007-04-19
US20040147421A1 (en) 2004-07-29
WO2005043250A3 (en) 2005-08-11
US7135445B2 (en) 2006-11-14
EP1682944A2 (en) 2006-07-26
CN1871553A (en) 2006-11-29
WO2005043250A2 (en) 2005-05-12
KR20070003772A (en) 2007-01-05

Similar Documents

Publication Publication Date Title
WO2005043250B1 (en) Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
EP1576072B1 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
TW200700938A (en) Composition for removal of residue comprising cationic salts and methods using same
JP2007510173A5 (en)
JP2008509554A5 (en)
RS1004A (en) Microelectronic cleaning compositions containing ammonia- free fluoride salts
WO2003035797A1 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
CN101548242B (en) Cleaning compound for removing photoresist
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
JP5845501B2 (en) Etching solution for transparent conductive thin film laminate
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
KR101999641B1 (en) Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
SG131867A1 (en) Aqueous cleaning composition and method for using same
KR20140028962A (en) Stripper composition for thick negative photoresist
WO2009073588A1 (en) Fluoride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
KR20110007828A (en) Stripper composition for copper or copper alloy interconnection
JP6497668B2 (en) Stripper composition for removing photoresist and photoresist stripping method using the same
KR101831452B1 (en) Multipurpose acidic, organic solvent based microelectronic cleaning composition
JP4177758B2 (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
KR20110083689A (en) Gluconic acid containing photoresist cleaning composition for multi-metal device processing
JP2012118368A (en) Resist stripping agent and stripping method using the same
TW200734836A (en) Cleaning composition for removing post-dry-etch residues
WO2003064581A8 (en) Methods and compositions for chemically treating a substrate using foam technology
JP2004205674A (en) Resist remover

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200480031172.X

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
B Later publication of amended claims

Effective date: 20050811

WWE Wipo information: entry into national phase

Ref document number: 2006536846

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2004796185

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067009959

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004796185

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067009959

Country of ref document: KR