WO2005050746A2 - Kostengünstige, miniaturisierte aufbau- und verbindungstechnik für leuchtdioden und andere optoelektronische module - Google Patents
Kostengünstige, miniaturisierte aufbau- und verbindungstechnik für leuchtdioden und andere optoelektronische module Download PDFInfo
- Publication number
- WO2005050746A2 WO2005050746A2 PCT/EP2004/052676 EP2004052676W WO2005050746A2 WO 2005050746 A2 WO2005050746 A2 WO 2005050746A2 EP 2004052676 W EP2004052676 W EP 2004052676W WO 2005050746 A2 WO2005050746 A2 WO 2005050746A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic component
- planar
- product according
- substrate
- insulating layer
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title description 16
- 238000010276 construction Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 claims description 2
- 238000004040 coloring Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009993 protective function Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
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Definitions
- wire bonding and soldering or chip mounting are predominantly used as electrical contacting techniques between the chip and the substrate
- Encapsulation of the chip with transparent material epoxy, silicone, acrylate, polyurethane and other polymers
- connection technology should offer a high degree of flexibility so that to be able to react flexibly and cost-effectively to design changes.
- the object of the invention is to specify modules with a substrate and optoelectronic components and methods for their production which meet these requirements.
- a substrate has an optoelectronic component which is in contact with planar.
- the contact is no longer made through thick, possibly in
- planar contacting results in a particularly low overall height of the module comprising the substrate and the optoelectronic component.
- the optoelectronic component can be contacted, for example, with other optoelectronic components on the substrate. In particular, it is in planar contact with conductive elements, for example conductor tracks, of the substrate.
- the substrate and / or the optoelectronic component are at least partially provided with an insulating layer on which the planar lead structure is arranged for the planar contacting of the optoelectronic component.
- the insulating layer can be formed by a film, lacquer and / or a polymer layer.
- the layer can be laminated, evaporated, printed and / or sprayed.
- the insulating layer can be structured, for example, by means of laser, (plasma) etching, inkjet and / or photo structuring. Parylene in particular can be used as the polymer.
- a light interaction with the surroundings should be possible for the optoelectronic component. This can be achieved particularly advantageously in two ways:
- the insulating layer as a whole or in particular in the region of the light exit and / or entrance opening of the optoelectronic component can be (highly) transparent.
- a window can be opened in the insulating layer in the area of the light exit and / or entry opening of the optoelectronic component.
- the window for example if the insulating layer is formed by a film, may already be present in the layer before the layer is applied. Alternatively, however, it can also be opened after the layer has been applied by appropriately structuring the layer using the above-mentioned procedures.
- Such a window is preferably also provided in the insulating layer in the region of one or more electrical contact points of the optoelectronic component.
- the planar guide structure can then be guided through the window to the contact point of the optoelectronic component.
- the insulating layer and / or the planar guide structure can also have a light exit and / or entrance opening of the optoelectronic component at least partially cover it.
- the planar guide structure is in particular designed to be reflective, so that, for example, light is reflected back into the optoelectronic component and can leave it at another light exit opening. In this way, light guidance can also be achieved via the planar contact.
- the optoelectronic component is, for example, an LED, in particular an OLED, and / or a photovoltaic component.
- Ceramics a flex, in particular copper-clad on both sides, a stamped or etched lead frame or a layer structure, for example, are used, such as is used in the production of chip cards or flexible circuits.
- the height of the product with substrate and optoelectronic component is preferably less than 0.4 mm.
- the optoelectronic component is contacted in a planar manner.
- Advantageous refinements of the method result analogously to the advantageous refinements of the product and vice versa.
- FIG. 1 shows a section through a product having a substrate with a planar contacted optoelectronic component
- FIG. 2 shows a section through an alternative product having a substrate with a planar-contacted optoelectronic component; 3 shows a comparison between the planar and a conventionally contacted optoelectronic component in plan view and
- FIG. 4 shows a comparison between the planar and the conventionally contacted optoelectronic component with regard to the light failure.
- One or more optoelectronic components are fixed on a substrate by gluing or soldering.
- the electrical connection of contact points in the form of contact pads on the top of the optoelectronic component is now carried out using a planar contacting method. This can be done, for example, by laminating an electrically insulating film and making contact by means of planar conductive structures in the form of
- an insulating layer can also be produced by other methods, such as painting, vapor deposition or printing.
- the film can be transparent in the wavelength range of the light emitted or absorbed by the optoelectronic component. Then no partial removal of the film is necessary. The film can then also take on the protective function of the clear mold compound. - If the film is not sufficiently transparent, it can be structured so that, depending on the type of LED, the light emission on the chip flanks and / or on the chip top is maximized. This can be done, for example, by laser ablation flexibly and independently of the topography.
- the insulating film simulates the chip surface. This means that the full insulation function to increase reliability is also provided on the edges and in the corner areas.
- the insulating film is coated in an electrically conductive manner, for example by laminating on a metal film.
- This metal foil is now structured before or after the lamination process.
- the connection between the chip and the metal structure can take place in the case of elevated, particularly rough bumps on the chip pads by mechanical pressing or also by partial galvanic or currentless deposition. Refinement of the aluminum chip pads at the wafer level is advantageous here.
- connection can also be made by using preformed pressing tools in commercially available presses.
- the conductive metal structures can be applied by a printing process.
- FIG. 1 shows a product 1 having a substrate 2 in the form of an etched copper leadframe.
- the copper of the leadframe is surrounded by a nickel-gold electroplating to improve the soldering properties.
- An optoelectronic component 3 in the form of a chip is arranged on the substrate 2 and is electrically and mechanically connected to the substrate 2 via conductive adhesive or solder 4.
- An insulating layer 5 in the form of a film is guided over the substrate 2 and the optoelectronic component 3.
- the insulating layer 5 is opened through a window in the region of the light exit opening of the optoelectronic component 3.
- a planar conductive structure 6 in the form of a metallization is guided over the insulating layer 5 to contact points of the optoelectronic component 3 and to a conductor track 7 of the substrate 2.
- the substrate 2 with the optoelectronic component 3, the insulating layer 5 and the planar conductive structure 6 are cast into a protective compound 8 in the form of a clear-mold compound.
- the product 1 is about 150 microns high.
- the product 1 shown in FIG. 2 corresponds to that shown in FIG. 1 with the exception of the fact that the insulating layer 5 is transparent and therefore passes through in the area of the light exit opening of the optoelectronic component 3. There is therefore no window open there, but only at the contact points of the optoelectronic component 3 at which it is electrically connected to the planar guide structure 6.
- the transparent, insulating layer 5 can in particular in the area of the light exit opening of the optoelectronic Component 3 contain pigments to color emerging light.
- FIG. 3 shows on the left a planar-contacted optoelectronic component 3 with a large central light outlet and an edge contact completely surrounding this light outlet with a planar guide structure 6 and an insulating layer hidden underneath.
- the edge contact may not run all the way round, but only at one or more individual points to the end face of the optoelectronic component 3 facing away from the substrate 2.
- An optoelectronic component 3 can be seen on the right in FIG. 3, which is contacted with a wire 9 via 120 ⁇ m wire bonding according to the prior art. As can be seen, a large part of the light exit opening of the optoelectronic component 3 is covered.
- planar contacting when guiding light are particularly clear in FIG. 4.
- All light exit openings of the optoelectronic component 3, at which a light exit is not desired, are through the insulating film 5 and the planar Lead structure 6 covered. If these are designed to be reflective, the light is even reflected back into the optoelectronic component 3 until it emerges at the light exit opening provided.
- planar-contacted optoelectronic component 3 the light emerges as desired at the end face of optoelectronic component 3 opposite substrate 2 and thus approximately perpendicular to substrate 2.
- the phosphors for the light conversion blue to white can be incorporated into the film as pigments. In this way, good control of the color coordinates is possible via a precisely determined film thickness and pigment concentration in the film.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006540423A JP2007511914A (ja) | 2003-11-17 | 2004-10-27 | 発光ダイオードおよびその他の光電モジュールに対するエコノミーな、小型化されたコンストラクションおよびコネクション技術 |
EP04791319.9A EP1685603B1 (de) | 2003-11-17 | 2004-10-27 | Kostengünstige, miniaturisierte aufbau- und verbindungstechnik für leds und andere optoelektronische module |
KR1020067011986A KR101164259B1 (ko) | 2003-11-17 | 2004-10-27 | Led 및 다른 광전자 모듈을 위한 경제적인 소형화 구조 기법 및 접합 기법 |
EP10177356.2A EP2262016B1 (de) | 2003-11-17 | 2004-10-27 | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
US10/579,542 US7759754B2 (en) | 2003-11-17 | 2004-10-27 | Economical miniaturized assembly and connection technology for LEDs and other optoelectronic modules |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10353679A DE10353679A1 (de) | 2003-11-17 | 2003-11-17 | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
DE10353679.5 | 2003-11-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP10177356.2A Previously-Filed-Application EP2262016B1 (de) | 2003-11-17 | 2004-10-27 | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005050746A2 true WO2005050746A2 (de) | 2005-06-02 |
WO2005050746A3 WO2005050746A3 (de) | 2005-07-28 |
Family
ID=34530247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/052676 WO2005050746A2 (de) | 2003-11-17 | 2004-10-27 | Kostengünstige, miniaturisierte aufbau- und verbindungstechnik für leuchtdioden und andere optoelektronische module |
Country Status (8)
Country | Link |
---|---|
US (1) | US7759754B2 (de) |
EP (2) | EP1685603B1 (de) |
JP (1) | JP2007511914A (de) |
KR (1) | KR101164259B1 (de) |
CN (2) | CN1910761A (de) |
DE (1) | DE10353679A1 (de) |
TW (1) | TWI305426B (de) |
WO (1) | WO2005050746A2 (de) |
Cited By (5)
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JP2007036030A (ja) * | 2005-07-28 | 2007-02-08 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
DE102008028299B3 (de) * | 2008-06-13 | 2009-07-30 | Epcos Ag | Systemträger für elektronische Komponente und Verfahren für dessen Herstellung |
US7726835B2 (en) | 2005-02-28 | 2010-06-01 | Osram Opto Semiconductors Gmbh | LED array |
DE102012200327A1 (de) | 2012-01-11 | 2013-07-11 | Osram Gmbh | Optoelektronisches Bauelement |
KR101295606B1 (ko) * | 2005-08-30 | 2013-08-12 | 오스람 옵토 세미컨덕터스 게엠베하 | 평면 접점을 포함하는 반도체 소자의 제조 방법 및 반도체소자 |
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DE102005055293A1 (de) | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
DE102006015117A1 (de) | 2006-03-31 | 2007-10-04 | Osram Opto Semiconductors Gmbh | Optoelektronischer Scheinwerfer, Verfahren zum Herstellen eines optoelektronischen Scheinwerfers und Lumineszenzdiodenchip |
US7626262B2 (en) * | 2006-06-14 | 2009-12-01 | Infineon Technologies Ag | Electrically conductive connection, electronic component and method for their production |
DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
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DE102007015893A1 (de) * | 2007-04-02 | 2008-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zum Betrieb und Verfahren zur Herstellung einer optoelektronischen Anordnung |
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DE102010032497A1 (de) * | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips |
US20120052458A1 (en) * | 2010-08-24 | 2012-03-01 | Roger Harman | Removable orthodontic or orthopedic appliance with inlaid design piece and the method of construction |
JP5625778B2 (ja) * | 2010-11-12 | 2014-11-19 | 富士ゼロックス株式会社 | 発光チップ、発光装置、プリントヘッドおよび画像形成装置 |
US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
DE102013210668A1 (de) * | 2013-06-07 | 2014-12-11 | Würth Elektronik GmbH & Co. KG | Verfahren zur Herstellung eines optischen Moduls |
DE102016109519A1 (de) | 2016-05-24 | 2017-11-30 | Osram Gmbh | Eindeckungsteil für ein Gewächshaus, Gewächshaus und Verwendung einer Schicht für ein Eindeckungsteil |
DE102020119511A1 (de) | 2020-07-23 | 2022-01-27 | Ic-Haus Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7726835B2 (en) | 2005-02-28 | 2010-06-01 | Osram Opto Semiconductors Gmbh | LED array |
JP2007036030A (ja) * | 2005-07-28 | 2007-02-08 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
KR101295606B1 (ko) * | 2005-08-30 | 2013-08-12 | 오스람 옵토 세미컨덕터스 게엠베하 | 평면 접점을 포함하는 반도체 소자의 제조 방법 및 반도체소자 |
DE102008028299B3 (de) * | 2008-06-13 | 2009-07-30 | Epcos Ag | Systemträger für elektronische Komponente und Verfahren für dessen Herstellung |
DE102012200327A1 (de) | 2012-01-11 | 2013-07-11 | Osram Gmbh | Optoelektronisches Bauelement |
WO2013104606A1 (de) | 2012-01-11 | 2013-07-18 | Osram Gmbh | Optoelektronisches bauelement mit inertgas atmosphäre |
US9640739B2 (en) | 2012-01-11 | 2017-05-02 | Osram Gmbh | Optoelectronic component with inert gas atmosphere |
DE102012200327B4 (de) | 2012-01-11 | 2022-01-05 | Osram Gmbh | Optoelektronisches Bauelement |
Also Published As
Publication number | Publication date |
---|---|
EP2262016B1 (de) | 2019-05-08 |
CN1910761A (zh) | 2007-02-07 |
EP2262016A3 (de) | 2015-04-29 |
KR20060099531A (ko) | 2006-09-19 |
TWI305426B (en) | 2009-01-11 |
EP2262016A2 (de) | 2010-12-15 |
DE10353679A1 (de) | 2005-06-02 |
US7759754B2 (en) | 2010-07-20 |
US20070190290A1 (en) | 2007-08-16 |
CN102088056A (zh) | 2011-06-08 |
KR101164259B1 (ko) | 2012-07-09 |
EP1685603B1 (de) | 2015-09-30 |
EP1685603A2 (de) | 2006-08-02 |
JP2007511914A (ja) | 2007-05-10 |
WO2005050746A3 (de) | 2005-07-28 |
TW200529471A (en) | 2005-09-01 |
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